August 2006
2006 Fairchild Semiconductor Corporation
FDD6637 Rev C2(W)
www.fairchildsemi.com
FDD6637
35V P-Channel PowerTrench MOSFET
General Description
This P-Channel MOSFET has been produced using
Fairchild Semiconductor’s proprietary PowerTrench
technology to deliver low Rdson and optimized Bvdss
capability to offer superior performance benefit in the
applications.
Applications
• Inverter
• Power Supplies
Features
• –55 A, –35 V RDS(ON) = 11.6 mΩ @ VGS = –10 V
RDS(ON) = 18 mΩ @ VGS = –4.5 V
• High performance trench technology for extremely
low RDS(ON)
• RoHS Compliant
G
S
D
TO-252
D-PAK
(TO-252)
Absolute Maximum Ratings TA=25oC unless otherwise noted
Symbol Parameter Ratings Units
VDSS Drain-Source Voltage –35 V
VDS(Avalanche) Drain-Source Avalanche Voltage (maximum) (Note 4) –40 V
VGSS Gate-Source Voltage ±25 V
Continuous Drain Current @TC=25°C (Note 3) –55
@TA=25°C (Note 1a) –13
ID
Pulsed (Note 1a) –100
A
Power Dissipation @TC=25°C (Note 3) 57
@TA=25°C (Note 1a) 3.1
PD
@TA=25°C (Note 1b) 1.3
W
TJ, TSTG Operating and Storage Junction Temperature Range –55 to +150 °C
Thermal Characteristics
RθJC Thermal Resistance, Junction-to-Case (Note 1) 2.2
RθJA Thermal Resistance, Junction-to-Ambient (Note 1a) 40
RθJA Thermal Resistance, Junction-to-Ambient (Note 1b) 96
°C/W
Package Marking and Ordering Information
Device Marking Device Package Reel Size Tape width Quantity
FDD6637 FDD6637 D-PAK (TO-252) 13’’ 12mm 2500 units
S
G
D
FDD6637
35V P
-
Channel PowerTrench
MOSFET
FDD6637 Rev. C2(W) www.fairchildsemi.com
Electrical Characteristics TA = 25°C unless otherwise noted
Symbol Parameter Test Conditions Min Typ Max Units
Drain-Source Avalanche Ratings
EAS Drain-Source Avalanche Energy
(Single Pulse) VDD = -35 V, ID= -11 A, L=1mH 61 mJ
IAS Drain-Source Avalanche Current –14 A
Off Characteristics(Note 2)
BVDSS Drain–Source Breakdown
Voltage VGS = 0 V, ID = –250 µA –35 V
IDSS Zero Gate Voltage Drain Current VDS = –28 V, VGS = 0 V –1 µA
IGSS Gate–Body Leakage VGS = ±25 V, VDS = 0 V ±100 nA
On Characteristics (Note 2)
VGS(th) Gate Threshold Voltage VDS = VGS, ID = –250 µA –1 –1.6 –3 V
RDS(on) Static Drain–Source
On–Resistance VGS = –10 V, ID = –14 A
VGS = –4.5 V, ID = –11 A
VGS = –10 V, ID = –14 A, TJ=125°C
9.7
14.4
14.7
11.6
18
19
mΩ
gFS Forward Transconductance VDS =–5 V, ID = –14 A 35 S
Dynamic Characteristics
Ciss Input Capacitance 2370 pF
Coss Output Capacitance 470 pF
Crss Reverse Transfer Capacitance
VDS = –20 V, V GS = 0 V,
f = 1.0 MHz 250 pF
RG Gate Resistance f = 1.0 MHz 3.6 Ω
Switching Characteristics (Note 2)
td(on) Turn–On Delay Time 18 32 ns
tr Turn–On Rise Time 10 20 ns
td(off) Turn–Off Delay Time 62 100 ns
tf Turn–Off Fall Time
VDD = –20 V, ID = –1 A,
VGS = –10 V, RGEN = 6 Ω 36 58 ns
Qg Total Gate Charge, VGS = –10V 45 63 nC
Qg Total Gate Charge, VGS = –5V 25 35 nC
Qgs Gate–Source Charge 7 nC
Qgd Gate–Drain Charge
VDS = – 20 V, ID = –14 A
10 nC
FDD6637
35V P
-
Channel PowerTrench
MOSFET
FDD6637 Rev. C2(W) www.fairchildsemi.com
D
R
P
DS(ON)
Electrical Characteristics TA = 25°C unless otherwise noted
Symbol Parameter Test Conditions Min Typ Max Units
Drain–Source Diode Characteristics
VSD Drain–Source Diode Forward
Voltage VGS = 0 V, IS = –14 A (Note 2) –0.8 –1.2 V
trr Diode Reverse Recovery Time 28 ns
Qrr Diode Reverse Recovery Charge
IF = –14 A, diF/dt = 100 A/µs
15 nC
Notes:
1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design.
a) RθJA = 40°C/W when mounted on a
1in2 pad of 2 oz copper b) RθJA = 96°C/W when mounted
on a minimum pad.
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%
3. Maximum current is calculated as:
where PD is maximum power dissipation at TC = 25°C and RDS(on) is at TJ(max) and VGS = 10V. Package current limitation is 21A
4. BV(avalanche) Single-Pulse rating is guaranteed if device is operated within the UIS SOA boundary of the device.
FDD6637
35V P
-
Channel PowerTrench
MOSFET
FDD6637 Rev. C2(W) www.fairchildsemi.com
Typical Characteristics
0
20
40
60
80
100
01234
-VDS, DRAIN-SOURCE VOLTAGE (V)
-ID, DRAIN CURRENT (A)
-6.0V -5.0V -4.5V
-3.5V
V
GS
= -10V
-4.0V
-3.0V
0.8
1
1.2
1.4
1.6
1.8
2
2.2
2.4
020 40 60 80 100
-ID, DRAIN CURRENT (A)
NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
VGS
-5.0V
-6.0V
-8.0V
-10V
-4.5V
-4.0V
Figure 1. On-Region Characteristics Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage
0.6
0.8
1
1.2
1.4
1.6
1.8
-50 -25 0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (oC)
NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
ID = -14A
VGS = -10V
0
0.01
0.02
0.03
0.04
0.05
2 4 6 8 10
-VGS, GATE TO SOURCE VOLTAGE (V)
RDS(ON), ON-RESISTANCE (OHM)
ID = -7A
TA = 125oC
TA = 25oC
Figure 3. On-Resistance Variation with
Temperature Figure 4. On-Resistance Variation with
Gate-to-Source Voltage
0
20
40
60
80
100
12345
-VGS, GATE TO SOURCE VOLTAGE (V)
-ID
, DRAIN CURRENT (A)
TA = -55oC
25oC
125oC
VDS
= -5V
0.0001
0.001
0.01
0.1
1
10
100
1000
00.2 0.4 0.6 0.8 11.2 1.4
-VSD, BODY DIODE FORWARD VOLTAGE (V)
-IS, REVERSE DRAIN CURRENT (A)
VGS = 0V
TA = 125oC
25
o
C
-55oC
Figure 5. Transfer Characteristics Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature
FDD6637
35V P
-
Channel PowerTrench
MOSFET
FDD6637 Rev. C2(W) www.fairchildsemi.com
Typical Characteristics
0
2
4
6
8
10
010 20 30 40 50
Qg, GATE CHARGE (nC)
-VGS, GATE-SOURCE VOLTAGE (V)
ID = -14A VDS = 10V
20V
30V
0
800
1600
2400
3200
0 5 10 15 20 25 30
VDS, DRAIN TO SOURCE VOLTAGE (V)
CAPACITANCE (pF)
Ciss
Crss
Coss
f = 1MHz
VGS
= 0 V
Figure 7. Gate Charge Characteristics Figure 8. Capacitance Characteristics
0.01
0.1
1
10
100
1000
00110 100
-VDS, DRAIN-SOURCE VOLTAGE (V)
-ID, DRAIN CURRENT (A)
DC
1s
100ms
RDS(ON) LIMIT
VGS = -10V
SINGLE PULSE
RθJA = 96oC/W
T
A
= 25
o
C
10ms
1ms
100µs
10s
0
20
40
60
80
100
0.01 0.1 1 10 100 1000
t1, TIME (sec)
P(pk), PEAK TRANSIENT POWER (W)
SINGLE PULSE
RθJA = 96°C/W
T
A
= 25°C
Figure 9. Maximum Safe Operating Area Figure 10. Single Pulse Maximum
Power Dissipation
0
20
40
60
80
100
0.01 0.1 1 10 100 1000
t1, TIME (sec)
I(pk), PEAK TRANSIENT CURRENT (A)
SINGLE PULSE
RθJA = 96°C/W
T
A
= 25°C
1
10
100
1000
0.001 0.01 0.1 1 10
tAV, TIME IN AVANCHE(ms)
I(AS), AVALANCHE CURRENT
TJ = 25oC
Figure 11. Single Pulse Maximum Peak
Current Figure 12. Unclamped Inductive
Switching Capability
FDD6637
35V P
-
Channel PowerTrench
MOSFET
FDD6637 Rev. C2(W) www.fairchildsemi.com
Typical Characteristics
0.001
0.01
0.1
1
0.001 0.01 0.1 1 10 100 1000
t1, TIME (sec)
r(t), NORMALIZED EFFECTIVE
TRANSIENT THERMAL RESISTANCE
RθJA(t) = r(t) * RθJA
RθJA = 96 °C/W
TJ - TA = P * RθJA(t)
Duty Cycle, D = t1 / t2
P(pk)
t1t2
SINGLE PULSE
0.01
0.02
0.05
0.1
0.2
D = 0.5
Figure 13. Transient Thermal Response Curve
Thermal characterization performed using the conditions described in Note 1b.
Transient thermal response will change depending on the circuit board design.
FDD6637 35V P
-
Channe
l PowerTrench
MOSFET
FDD6637 Rev. C2(W) www.fairchildsemi.com
Test Circuits and Waveforms
tAV
tP
IAS
VDS
VDD
BVDSS
tAV
tP
IAS
VDS
VDD
BVDSS
Figure 14. Unclamped Inductive Load Test
Circuit Figure 15. Unclamped Inductive Waveforms
VGS QGS QGD
QG
10V
Charge, (nC)
VGS QGS QGD
QG
10V
Charge, (nC)
Figure 16. Gate Charge Test Circuit Figure 17. Gate Charge Waveform
trtf
td(ON) td(OFF)
tON tOFF
Pulse Width
10%
10%
90%
10%
90%
50%
90%
50%
0V
0V
VGS
VDS trtf
td(ON) td(OFF)
tON tOFF
Pulse Width
10%
10%
90%
10%
90%
50%
90%
50%
0V
0V
VGS
VDS
Figure 18. Switching Time Test Circuit Figure 19. Switching Time Waveforms
VDS
L
RGEN
DUT
VG
I
AS
0.01
Ω
VDD
+
-
tp
0V
vary t
P
to obtain
required peak IAS
VGS
DUT
VDD
VG
I
g(REF)
+
-
+
-
Same type as DUT
Drain Current Regulator
1
µ
F
10
µ
F
10V
50k
Ω
V
DS
RL
RGEN
DUT
V
GS
Pulse Width
≤
1
µ
s
Duty Cycle
≤
0.1
%
VGS
+
-
FDD663
7
35V
P
-
Channel PowerTrench
MOSFET
VDD
Rev. I20
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intended to be an exhaustive list of all such trademarks.
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HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE
APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER
ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S
WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS.
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FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR
SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life sup port devices or systems a re devices or syst ems which,
(a) are intended for surgical implant into the body, or (b) support or
sustain life, or (c) wh ose failure to pe rform when pr operly used in
accordance with instructions for use provided in the labeling, can be
reasonably expected to result in significant injury to the user.
2. A critical component is any component of a life support device or
system whose failure to perform can be reasonably expected to
cause the failure of the life support device or system, or to affect its
safety or effectiveness.
PRODUCT STATUS DEFINITIONS
Definiti on of Terms
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OPTOLOGIC®
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Datasheet Identificatio n Product S tatus Defi niti on
Advance Information Formative or In Design This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary First Production This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice to improve
design.
No Identification Needed Full Production This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice to improve design.
Obsolete Not In Production This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.