U LORAL/FREQUENCY/SEMICOND NB 86D 00799 D FP -oO7-79 60-VOLT Ve D MM 55?9621 0000799 Oo my SILICON TUNING VARACTORS a nana DESCRIPTION 100 TTT The GC1700 series tuning varactors are silicon abrupt junc- eee Y= 460-7 tion devices, They offer the highest Q and lowest resistance SS a ev 7 available in 60 volt tuning diodes. PN A B ae A PS A unique silicon dioxide passivation process assures greater RESESEER stability, reliability, and low leakage currents at higher SSS KS - temperatures, wo PRS ~~ a =, oN A Eee ti GC1720 Oo Boe Tn Po a y SS SEES eCIvie Oo SSS SNS ee eci7ie 2 C1717 APPLICATIONS 5 SSS SSS. 5 : < J Ss REESE EEE eis The GC1700 series tuning varactors are used for both narrow S KC oR ecr7i2 and wide band tuning through S-Band. eo FO =P SS SC 711 5 SOR GC1710 , Co 2 REESE @ci709 These devices are used in circuits requiring a high Q voltage 2 40 PP ow ~~ hs 601708 variable capacitance such as: tunable filters and amplifiers, aN Po Golyts voltage controlled oscillators, frequency synthesizers and con- - oS ~h S eci7ds tinuous phase shifters. They are also useful as frequency and - . ~~ RN 61704 phase modulators in communications applications. PS] P<] Sale GC1703 5 M. GC1702 Standard capacitance tolerance is 10%. Diodes can be opti- Pacis mized for custom electrical or mechanical specifications upon REVERSE Bi aS SCALE INCLUDES WORK {ec 1790 request, a =, a 10 iil | I | Llib | I i SCITOOA All specifications shown on the following page are based on 1.0 10 100 the style 30 package. Other ceramic or glass packages are Vp (VOLTS) available. Chips mounted on carriers with gold wire/ribbon leads are also available. Typical Junction Capacitance vs Reverse Bias \ FREQUENCY SOURCES BEMICONPUCTOR PIVISION 11 LORAL/FREQUENCY/SEMICOND IND g6D 00800 D 7=Oo7-/F 60-VOLT % > m 5579621 ooo0800 3 mm: SILICON TUNING VARACTORS ELECTRICAL SPECIFICATIONS T At 25C TOTAL CAPACITANCE! | QUALITY FACTOR2 | CAPACITANCE RATIO! MODEL (AT -4V, 1 MHz) (AT -4V, 50 MHz) (Cio/Cig0) NUMBER C4 (pF) _ Q_4 (MIN) GC1700A 0.6 2200 4.5 GC1700 0.8 2100 46 GC1701 1.0 2000 4.8 GC1702 1.2 1800 5.0 GC1703 15 1800 5.3 GC1704 1.8 1700 5.5 GC1705 2.2 1700 5.8 GC1706 2.7 1600 5.9 - GC1707 3.3 1600 6.0 GC1708 3.9 1400 6.0 GC1709 47 1400 6.5 GC1710 5.6 1400 6.5 GC1711 6.8 1300 6.5 GC1712 8.2 1300 7.0 GC1713 10.0 1200 7.0 GC1714 12.0 1200 7.0 GC1715 15.0 1100 7.0 GC1716 18.0 1000 - 7.0 GC1717 22.0 1000 7.0 GC1718 27.0 900 7.0 GC1719 33.0 800 7.0 GC1720 39.0 800 7.0 NOTES: 1. THESE VALUES INCLUDE A PACKAGE CAPACITANCE OF .18pF. 2. OISCALCULATED FROM: Q = a WHERE f = 50 MHz AND TIM hy R, = SERIES RESISTANCE MEASURED AT 1 GHz USING TRANSMISSION LOSS TECHNIQUES. CAPACITANCE IS MEASURED AT 1 MHz. 3. DUE TO DICE SIZES, ONLY CASE STYLES 11 AND 55 ARE AVAILABLE FOR GC1718 TO GC1720. STYLES 15, 80, 85 AND 89 ARE AVAILABLE FOR GC1700A TO GC1710. WHEN ORDERING, SPECIFY THE DESIRED CASE STYLE BY ADDING ITS NUMBER AS A SUFFIX TO THE BASIC PART NUMBER. SOME OTHER CASE STYLES ARE AVAILABLE ON v REQUEST. ; Eg RATINGS Minimum Voltage Breakdown: 60 volts at 10 UA Capacitance- Temperature Maximum Leakage Current: 0.02 BA at 55 volts at 25C Coefficient: 300 ppm/C at VR=-4Vv 2.0 PA at 55 volts at 125C FREQUENCY SOURCES SEMICONDUCTOR FAVIBION 12 IND 960 00801 DB Wrozr/? LORAL/FREQUENCY/SEMICOND 60-VOLT 56 D i 557%b21 0000801 5 SILICON TUNING VARACTORS sy Essense ssennvnennrerneransesaeeeeeeeransereseeneenee PACKAGE STYLES ey a . sy - . . 7. - . 1900 : - MN QO See OM vl | ee | ew PL} LJ U (] OJOMAX at SOLD BACKING MOG {p05 NOM Troe esa anes cue }o shee : ed : * giz DEPENDS ON [] id . . ODE PARAMETERS - . . 2,7 DP & BOTTOM Sehnert . - tpn leaf ipedtnt CHAIR bpd oof + Cate tet Ger . Style 00 Style 11. _ . Style 15 Styte 30 CO ou6 . - ot an . . i . 2 7 - _ ; a3 : ; inhi 0 | ba _ 4 { 1 fp Ot anf 83 rd 34 0 aa oF po ays AOS | 554 T TRPLATES: | . | | < a = t 1 e ee a j 1 ob G he or-B+ - ee . cad 027 MAX - . = . ; Z ? ' , oss pe Bak Ha | oa 8 : i og 80 w3 Cpe Le Atal Bl pa . : Ent lok Lp, KS 4 =. ae ag ; FREQUENCY SOURCES SENICONRUCTOR Division 13