TECHNICAL DATA SHEET Gort Road Business Park, Ennis, Co. Clare, Ireland. Tel: +353 (0) 65 6840044, Fax: +353 (0) 65 6822298 6 Lake Street, Lawrence, MA 01841 Tel: 1-800-446-1158 / (978) 794-1666, Fax: (978) 6890803 Website: http://www.microsemi.com - High Reliability controlled devices - Thru hole mounting - Unidirectional construction - Selections for 5 V to 50 V standoff voltages (VWM) 500 W Low Capacitance Transient Voltage Suppressor DEVICES MSAC5.0 thru MSAC50, e3 LEVELS M, MA, MX, MXL FEATURES High reliability controlled devices with wafer fabrication and assembly lot traceability 100 % surge tested devices Suppresses transients up to 500 W @ 10/1000 s Low capacitance rating of 30 pF Unidirectional low-capacitance device (for bidirectional see Figure 6) Optional upscreening available by replacing the M prefix with MA, MX or MXL. These prefixes specify various screening and conformance inspection options based on MIL-PRF-19500. Refer to MicroNote 129 for more details on the screening options. Moisture classification is Level 1 with no dry pack required per IPC/JEDEC J-STD-020B RoHS Compliant devices available by adding "e3" suffix 3 lot norm screening performed on Standby Current ID DO-41 APPLICATIONS / BENEFITS Low Capacitance for data-line protection to 10 MHz Protection for aircraft fast data rate lines up to Level 3 Waveform 4 and Level 1 Waveform 5A in RTCA/DO-160F (also see MicroNote 130) & ARINC 429 with bit rates of 100 kb/s (per ARINC 429, Part 1, par 2.4.1.1) ESD and EFT protection per IEC61000-4-2 and IEC61000-4-4 respectively Secondary lightning protection per IEC61000-4-5 with 42 Ohms source impedance: Class 1: Class 2: Class 3: Class 4: MSAC5.0 to MSAC50 MSAC5.0 to MSAC45 MSAC5.0 to MSAC22 MSAC5.0 to MSAC10 Secondary lightning protection per IEC61000-4-5 with 12 Ohms source impedance Class 1: MSAC5.0 to MSAC26 Class 2: MSAC5.0 to MSAC15 Class 3: MSAC5.0 to MSAC7.0 MAXIMUM RATINGS Peak Pulse Power dissipation at 25 C: 500 W at @ 10/1000 s with impulse repetition rate (duty factor) of 0.01 % max* Operating and Storage temperature: -65 C to +150 C Steady-state power dissipation: 2.5 W @ TL = 75 C (lead Length = 3/8") Clamping Speed (0 volts to VBR min.) less than 5 nanoseconds. Solder temperatures: 260 C for 10 s (maximum) * TVS devices are not typically used for dc power dissipation and are instead operated < VWM (rated standoff voltage) except for transients that briefly drive the device into avalanche breakdown (V BR to VC region) of the TVS element. Also see Figures 5 and 6 for further protection details in rated peak pulse power for unidirectional and bidirectional configurations respectively RF01018 Rev A, October 2010 High Reliability Product Group Page 1 of 4 TECHNICAL DATA SHEET Gort Road Business Park, Ennis, Co. Clare, Ireland. Tel: +353 (0) 65 6840044, Fax: +353 (0) 65 6822298 6 Lake Street, Lawrence, MA 01841 Tel: 1-800-446-1158 / (978) 794-1666, Fax: (978) 6890803 Website: http://www.microsemi.com ___________________________________________________________________________________________________________________________________ MECHANICAL AND PACKAGING Void-free transfer molded thermosetting epoxy body meeting UL94V-0 requirements Tin-Lead (90 % Sn, 10 % Pb) or RoHS (100% Sn) Compliant annealed matte-Tin plating readily solderable per MILSTD-750, method 2026 Body marked with part number Cathode indicated by band. Available in bulk or custom tape-and-reel packaging TAPE-AND-REEL standard per EIA-296 (add "TR" suffix to part number) Weight: 0.7 grams (approximate) PACKAGE DIMENSIONS DO-41 SYMBOLS & DEFINITIONS Symbol VWM PPP VBR ID Definition Symbol Working Peak (Standoff) Voltage Peak Pulse Power Breakdown Voltage Standby Current RF01018 Rev A, October 2010 IPP VC IBR Definition Peak Pulse Current Clamping Voltage Breakdown Current for VBR High Reliability Product Group Page 2 of 4 TECHNICAL DATA SHEET Gort Road Business Park, Ennis, Co. Clare, Ireland. Tel: +353 (0) 65 6840044, Fax: +353 (0) 65 6822298 6 Lake Street, Lawrence, MA 01841 Tel: 1-800-446-1158 / (978) 794-1666, Fax: (978) 6890803 Website: http://www.microsemi.com ___________________________________________________________________________________________________________________________________ ELECTRICAL CHARACTERISTICS @ 25oC MICROSEMI PART NUMBER MSAC5.0 MSAC6.0 MSAC7.0 MSAC8.0 MSAC8.5 MSAC10 MSAC12 MSAC15 MSAC18 MSAC22 MSAC26 MSAC36 MSAC45 MSAC50 REVERSE STANDOFF VOLTAGE (Note 1) VWM Volts 5.0 6.0 7.0 8.0 8.5 10 12 15 18 22 26 36 45 50 BREAKDOWN VOLTAGE VBR @ IBR 1.0mA V(BR) Volts Min. 7.60 7.90 8.33 8.89 9.44 11.10 13.30 16.70 20.00 24.40 28.90 40.0 50.00 55.50 MAXIMUM MAXIMUM STANDBY CLAMPING CURRENT VOLTAGE VC ID @VWM @ IP = 5.0A A 300 300 300 100 50 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 Volts 10.0 11.2 12.6 13.4 14.0 16.3 19.0 23.6 28.8 35.4 42.3 60.0 77.0 88.0 MAXIMUM PEAK PULSE CURRENT RATING (Note 2) IPP Amps 44 41 38 36 34 29 25 20 15 14 11.1 8.6 6.8 5.8 MAXIMUM CAPACITANCE WORKING INVERSE BLOCKING VOLTAGE INVERSE BLOCKING LEAKAGE CURRENT PEAK INVERSE BLOCKING VOLTAGE @ O Volts pF VWIB Volts @ VWIB IIB A VPIB Volts 30 30 30 30 30 30 30 30 30 30 30 30 30 30 75 75 75 75 75 75 75 75 75 75 75 75 150 150 10 10 10 10 10 10 10 10 10 10 10 10 10 10 100 100 100 100 100 100 100 100 100 100 100 100 200 200 Note 1: A transient voltage suppressor is normally selected according to voltage (VWM), which should be equal to or greater than the dc or continuous peak operating voltage level. Note 2: Test in TVS avalanche direction. Do not pulse in "forward" direction. See section for "Schematic Applications" herein. GRAPHS tw - Pulse width Figure 1 RF01018 Rev A, October 2010 High Reliability Product Group Page 3 of 4 TECHNICAL DATA SHEET Gort Road Business Park, Ennis, Co. Clare, Ireland. Tel: +353 (0) 65 6840044, Fax: +353 (0) 65 6822298 6 Lake Street, Lawrence, MA 01841 Tel: 1-800-446-1158 / (978) 794-1666, Fax: (978) 6890803 Website: http://www.microsemi.com ___________________________________________________________________________________________________________________________________ GRAPHS Contd. TL - Lead Temperature - C Figure 2 t -time - msec Figure 3 SCHEMATIC APPLICATIONS The TVS low capacitance device configuration is shown in Figure 4. As a further option for unidirectional applications, an additional low capacitance rectifier diode may be used in parallel in the same polarity direction as the TVS as shown in Figure 5. In applications where random high voltage transients occur, this will prevent reverse transients from damaging the internal low capacitance rectifier diode and also provide a low voltage conducting direction. The added rectifier diode should be of similar low capacitance and also have a higher reverse voltage rating than the TVS clamping voltage V C. The Microsemi recommended rectifier part number is the "LCR60" for the application in Figure 5. If using two (2) low capacitance TVS devices in anti-parallel for bidirectional applications, this added protective feature for both directions (including the reverse of each rectifier diode) is also provided. The unidirectional and bidirectional configurations in Figure 5 and 6 will both result in twice the capacitance of Figure 4. Figure 4 TVS with internal Low Capacitance Diode RF01018 Rev A, October 2010 Figure 5 Optional Unidirectional configuration (TVS and separate rectifier diode in parallel) High Reliability Product Group Figure 6 Optional Bidirectional configuration (two TVS devices in anti-parallel) Page 4 of 4