2N6486 2N6487 2N6488 2N6489 2N6490 2N6491 NPN PNP COMPLEMENTARY SILICON POWER TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N6486, 2N6489 series types are complementary silicon power transistors designed for general purpose switching and amplifier applications. MARKING: FULL PART NUMBER TO-220 CASE MAXIMUM RATINGS: (TC=25C unless otherwise noted) SYMBOL Collector-Base Voltage VCBO Collector-Emitter Voltage VCEO Emitter-Base Voltage 2N6488 2N6491 90 UNITS V 60 80 V 40 5.0 V 15 A IB PD 5.0 A 75 W PD TJ, Tstg 1.8 W -65 to +150 C JC 1.67 C/W Continuous Base Current Power Dissipation Thermal Resistance ELECTRICAL CHARACTERISTICS: (TC=25C) 2N6487 2N6490 70 VEBO IC Continuous Collector Current Power Dissipation (TA=25C) Operating and Storage Junction Temperature 2N6486 2N6489 50 2N6486 2N6489 MIN MAX 500 2N6487 2N6490 MIN MAX - 2N6488 2N6491 MIN MAX - SYMBOL ICEV ICEV TEST CONDITIONS VCE=45V, VEB=1.5V VCE=65V, VEB=1.5V UNITS A ICEV ICEO VCE=85V, VEB=1.5V VCE=1/2 Rated VCEO IEBO BVCEV VEB=5.0V VBE=1.5V, IC=200mA BVCEO VCE(SAT) IC=200mA IC=5.0A, IB=0.5A - 1.3 - 1.3 - 1.3 V VCE(SAT) VBE(ON) IC=15A, IB=5.0A VCE=4.0V, IC=5.0A - 3.5 - 3.5 - 3.5 V - 1.3 - 1.3 - 1.3 V VBE(ON) hFE VCE=4.0V, IC=15A VCE=4.0V, IC=5.0A - 3.5 - 3.5 - 3.5 V 20 150 20 150 20 150 hFE hfe VCE=4.0V, IC=15A VCE=4.0V, IC=1.0A, f=1.0kHz 5.0 - 5.0 - 5.0 - 25 - 25 - 25 - fT VCE=4.0V, IC=1.0A, f=1.0MHz 5.0 - 5.0 - 5.0 - - - - 500 - - A - - - - - 500 A - 1.0 - 1.0 - 1.0 mA - 1.0 - 1.0 - 1.0 mA 50 - 70 - 90 - V 40 - 60 - 80 - V MHz R1 (11-September 2012) 2N6486 2N6487 2N6488 2N6489 2N6490 2N6491 NPN PNP COMPLEMENTARY SILICON POWER TRANSISTORS TO-220 CASE - MECHANICAL OUTLINE LEAD CODE: 1) Base 2) Collector 3) Emitter Tab) Collector MARKING: FULL PART NUMBER R1 (11-September 2012) w w w. c e n t r a l s e m i . c o m