CAT.No.TJ 536 USKB SERIES UL File No. E142422 Summary Bridge diodes are being required to take up less space accompanying the reduced size of electronic equipment. In order to respond to these needs, Shindengen has developed a new package in offering a complete lineup of bridge diodes that can be used in a wide range of power supply environments. Features forward current : 4AUS4KB80R, 6AUS6KB80R, 8AUS8KB80R, with heat sink 10AUS10KB80R, 15AUS15KB80R, 30AUS30KB80R Large current capacity of 30A with compact package High I FSM and High Voltage UL approved Bridge Rectifier Diodes, registered in file number E142422 High-density mounting for improved space efficiency through the use of SIP Single In-Line Package Rectified Application TV, Monitor, Switching power supply, PC, Audio, Printer CAT.No.TJ 536 RATINGS Absolute Maximum RatingsTc=25Unless otherwise specified Item StorageTemperature OperationJunctionTemperature MaximunReverseVoltage US4KB80R US6KB80R US8KB80R Unit Tstg -55150 Tj 150 VRM 800 Symbol Conditions Withheatsink AverageRectifiedForwardCurrent Io Withoutheatsink IFSM 60Hzsinewave,Non-repetitive1cyclepeakvalue, Tj=25 IFSM1 Non-repetitive,Tj=25 PeakSurgeForwardCurrent CurrentSquaredTime 60Hzsinewave, Resistanceload I2t Tj=25,Perdiode DielectricStrength Vdis MountingTorque TOR Recommendedtorque0.5Nm 6 8 Tc=125 Tc=116 Tc=108 2.1 2.1 2.2 Ta=30 Ta=30 Ta=26 150 175 200 245 470 575 tp=3ms tp=1ms tp=1ms 93 112 166 A A 3mst8.3ms 1mst8.3ms 1mst8.3ms A2 s 2.0 kV 0.8 Nm Terminalstocace,AC1minute Electrical CharacteristicsTc=25Unless otherwise specified MAX.1.00 ForwardVoltage VF Pulsemeasurement,Perdiode ReverseCurrent IR VR=800V,Pulsemeasurement,Perdiode ThermalResistance IF=2A MAX.1.00 IF=3A MAX.1.00 IF=4A MAX. 10 MAX.3.5 MAX.3.0 jc Junctiontocase,Withheatsink jl Junctiontolead,Withoutheatsink MAX. 5 ja Junctiontoambient,Withoutheatsink MAX. 35 TypeNo. V 4 US4K80R US6K80R V A MAX.2.8 /W US8K80R Absolute Maximum RatingsTc=25Unless otherwise specified Item StorageTemperature OperationJunctionTemperature MaximunReverseVoltage Symbol Conditions -55150 Tj 150 800 VRM Io IFSM PeakSurgeForwardCurrent IFSM1 CurrentSquaredTime Unit Tstg Withheatsink AverageRectifiedForwardCurrent US10KB80R US15KB80R US30KB80R I2 t 60Hzsinewave, Resistanceload Withoutheatsink V 10 15 30 Tc=100 Tc=101 Tc=97 2 2 2.1 Ta=28 Ta=30 Ta=27 60Hzsinewave,Non-repetitive1cyclepeakvalue, Tj=25 150 200 350 Non-repetitive,Tj=25 245 330 1000 tp=3ms tp=3ms tp=1ms 93 166 510 Tj=25,Perdiode DielectricStrength Vdis MountingTorque TOR Recommendedtorque0.5Nm 3mst8.3ms 3mst8.3ms 1mst8.3ms Terminalstocace,AC1minute A A A2s 2.0 kV 0.8 Nm Electrical CharacteristicsTc=25Unless otherwise specified ForwardVoltage VF Pulsemeasurement,Perdiode ReverseCurrent IR VR=800V,Pulsemeasurement,Perdiode ThermalResistance TypeNo. MAX.1.10 IF=5A MAX.1.10 IF=7.5A MAX.1.10 IF=15A MAX. 10 MAX.2.5 MAX.1.5 jc Junctiontocase,Withheatsink jl Junctiontolead,Withoutheatsink MAX. 5 ja Junctiontoambient,Withoutheatsink MAX. 35 U10K80R U15K80R V A MAX.0.8 /W U30K80R CAT.No.TJ 536 CHARACTERISTIC DIAGRAMS US4KB80R ForwardPowerDissipation Tc=150TYP Tc= 25TYP 2 1 0.5 0.2 0.1 0 0.2 0.4 0.6 0.8 1 1.2 1.4 T 6 4 2 1 AverageRectifiedForwardCurrentIoA AverageRectifiedForwardCurrentIoA onglass-epoxysubstrate P.C.B SIN solderingland3mm 2 1.5 1 0.5 0 0 20 40 60 80 100 120 3 4 100 50 0 1 5 140 7 6 2 4 Tc 2 1 AmbientTemperatureTa 60 80 100 120 20 50 100 PeakSurgeForwardCurrentCapability 3 40 10 500 Tc-sensingpoint SIN 20 5 NumberofCyclescycle 5 0 0 160 heatsink Sinewave R-load Withheatsink 8.3ms 1cycle non-repetitive sinewave Tj=25 DeratingCurveTc-Io DeratingCurveTa-Io 3 2.5 2 8.3ms 150 AverageRectifiedForwardCurrentIoA ForwardVoltageVFV Sinewave R-load Freeinair SIN Tj=150 0 0 1.6 D=tp/T 140 I tpFSM 5 Io tp 8 PeakSurgeForwardCurrentI FSM1A ForwardCurrentIFA 10 PeakSurgeForwardCurrentI FSMA Pulsemeasurementperdiode ForwardPowerDissipationPFW 20 PeakSurgeForwardCurrentCapability 200 10 IFSM ForwardVoltage 30 400 300 tp 200 Tj=150 100 90 80 70 60 50 3 160 non-repetitive sinewave Tj=25 4 CaseTemperatureTc 5 6 7 8.3 PulseWidetpms US6KB80R ForwardPowerDissipation 5 Tc= 25TYP 2 1 0.5 0.2 0.1 0 0.2 0.4 0.6 0.8 1 1.2 1.4 Tj=150 6 4 2 1 AverageRectifiedForwardCurrentIoA Sinewave R-load Freeinair P.C.B SIN solderingland3mm 2 1.5 1 0.5 0 0 20 40 60 80 100 120 AmbientTemperatureTa 3 4 5 6 7 8.3ms 150 100 50 0 1 8 140 160 10 heatsink Sinewave R-load Withheatsink Tc SIN 2 20 40 60 80 100 120 CaseTemperatureTc 5 10 20 50 100 PeakSurgeForwardCurrentCapability 4 0 0 2 NumberofCyclescycle 1000 Tc-sensingpoint 8 6 8.3ms 1cycle non-repetitive sinewave Tj=25 DeratingCurveTc-Io onglass-epoxysubstrate AverageRectifiedForwardCurrentIoA DeratingCurveTa-Io 2.5 2 200 AverageRectifiedForwardCurrentIoA ForwardVoltageVFV 3 SIN D=tp/T 8 0 0 1.6 tp T 10 PeakSurgeForwardCurrentI FSMA Tc=150TYP Io 12 PeakSurgeForwardCurrentI FSM1A ForwardCurrentIFA 10 IFSM Pulsemeasurementperdiode ForwardPowerDissipationPFW 20 PeakSurgeForwardCurrentCapability 250 14 140 160 I tpFSM ForwardVoltage 30 500 tp non-repetitive sinewave Tj=25 200 Tj=150 100 50 1 2 3 4 PulseWidetpms 5 6 7 8.3 CAT.No.TJ 536 CHARACTERISTIC DIAGRAMS US8KB80R ForwardVoltage ForwardPowerDissipation Tc= 25TYP 5 2 1 0.2 0.4 0.6 0.8 1 1.2 1.4 T Tj=150 10 5 2 AverageRectifiedForwardCurrentIoA AverageRectifiedForwardCurrentIoA 2.5 onglass-epoxysubstrate P.C.B SIN solderingland3mm 2 1.5 1 0.5 0 0 20 40 60 80 100 120 6 8 8.3ms 150 100 50 0 1 10 2 140 heatsink Sinewave R-load Withheatsink 12 10 20 50 100 PeakSurgeForwardCurrentCapability Tc-sensingpoint Tc 10 SIN 6 4 2 0 0 160 5 NumberofCyclescycle 1000 14 8 8.3ms 1cycle non-repetitive sinewave Tj=25 200 DeratingCurveTc-Io DeratingCurveTa-Io Sinewave R-load Freeinair 4 250 AverageRectifiedForwardCurrentIoA ForwardVoltageVFV 3 SIN 15 0 0 1.6 D=tp/T 20 40 AmbientTemperatureTa 60 80 100 120 140 I tpFSM 0.2 Io tp PeakSurgeForwardCurrentI FSM1A ForwardCurrentIFA Tc=150TYP 300 PeakSurgeForwardCurrentI FSMA ForwardPowerDissipationPFW Pulsemeasurementperdiode 20 0.1 0 PeakSurgeForwardCurrentCapability 20 IFSM 50 500 Tj=25 Tj=150 200 100 50 1 160 tp non-repetitive sinewave 2 CaseTemperatureTc 3 4 5 6 7 8.3 PulseWidetpms US10KB80R 30 Tc= 25TYP 2 1 0.5 0.2 0.1 0 0.2 0.4 0.6 0.8 1 1.2 1.4 tp T 20 15 10 5 2 P.C.B SIN solderingland3mm 2 1.5 1 0.5 0 0 20 40 60 80 100 120 6 8 10 IFSM 50 0 1 12 140 AmbientTemperatureTa 160 16 heatsink Sinewave R-load Withheatsink 14 Tc SIN 6 4 2 20 40 60 80 100 120 CaseTemperatureTc 5 10 20 50 100 PeakSurgeForwardCurrentCapability 8 0 0 2 NumberofCyclescycle 500 Tc-sensingpoint 12 10 8.3ms 1cycle non-repetitive sinewave Tj=25 100 DeratingCurveTc-Io onglass-epoxysubstrate AverageRectifiedForwardCurrentIoA AverageRectifiedForwardCurrentIoA DeratingCurveTa-Io 3 2.5 4 8.3ms 150 AverageRectifiedForwardCurrentIoA ForwardVoltageVFV Sinewave R-load Freeinair SIN Tj=150 0 0 1.6 D=tp/T 140 160 I tpFSM Tc=150TYP Io 25 PeakSurgeForwardCurrentI FSM1A ForwardCurrentIFA 10 200 PeakSurgeForwardCurrentI FSMA ForwardPowerDissipationPFW Pulsemeasurementperdiode 20 5 PeakSurgeForwardCurrentCapability ForwardPowerDissipation ForwardVoltage 50 400 300 tp Tj=25 non-repetitive sinewave 200 Tj=150 100 90 80 70 60 50 3 4 5 6 PulseWidetpms 7 8.3 CAT.No.TJ 536 CHARACTERISTIC DIAGRAMS US15KB80R ForwardVoltage ForwardPowerDissipation 5 2 1 0.5 0.2 0.2 0.4 0.6 0.8 1 1.2 1.4 tp T 30 Tj=150 25 20 15 10 5 0 0 1.6 5 AverageRectifiedForwardCurrentIoA AverageRectifiedForwardCurrentIoA 2.5 onglass-epoxysubstrate P.C.B SIN solderingland3mm 2 1.5 1 0.5 0 0 20 40 60 80 100 120 15 IFSM 8.3ms 150 100 50 0 1 20 140 24 20 16 2 Tc Tc 4 AmbientTemperatureTa 60 80 100 120 20 50 100 PeakSurgeForwardCurrentCapability 8 40 10 1000 SIN 20 5 NumberofCyclescycle Tc-sensingpoint 12 0 0 160 heatsink Sinewave R-load Withheatsink 8.3ms 1cycle non-repetitive sinewave Tj=25 DeratingCurveTc-Io DeratingCurveTa-Io Sinewave R-load Freeinair 10 200 AverageRectifiedForwardCurrentIoA ForwardVoltageVFV 3 SIN D=tp/T 140 I tpFSM 0.1 0 Io 35 PeakSurgeForwardCurrentI FSM1A ForwardCurrentIFA Tc=150TYP Tc= 25TYP 250 PeakSurgeForwardCurrentI FSMA ForwardPowerDissipationPFW Pulsemeasurementperdiode 20 10 PeakSurgeForwardCurrentCapability 40 50 500 200 non-repetitive sinewave Tj=150 100 50 20 3 160 tp Tj=25 4 CaseTemperatureTc 5 6 7 8.3 PulseWidetpms US30KB80R ForwardPowerDissipation 10 5 2 1 0.5 0.2 0.1 0 0.2 0.4 0.6 0.8 1 1.2 1.4 tp T Tj=150 50 40 30 20 10 5 onglass-epoxysubstrate P.C.B SIN solderingland3mm 2 1.5 1 0.5 0 0 20 40 60 80 100 120 15 20 25 30 35 IFSM 8.3ms 300 200 100 0 1 40 140 AmbientTemperatureTa 160 50 heatsink Sinewave R-load Withheatsink Tc SIN 10 20 40 60 80 100 120 CaseTemperatureTc 5 10 20 50 100 PeakSurgeForwardCurrentCapability 20 0 0 2 NumberofCyclescycle 2000 Tc-sensingpoint 40 30 8.3ms 1cycle non-repetitive sinewave Tj=25 DeratingCurveTc-Io AverageRectifiedForwardCurrentIoA AverageRectifiedForwardCurrentIoA DeratingCurveTa-Io 3 2.5 10 400 AverageRectifiedForwardCurrentIoA ForwardVoltageVFV Sinewave R-load Freeinair SIN D=tp/T 60 0 0 1.6 PeakSurgeForwardCurrentI FSMA Tc=150TYP Tc= 25TYP Io 70 PeakSurgeForwardCurrentI FSM1A 20 Pulsemeasurementperdiode ForwardPowerDissipationPFW ForwardCurrentIFA 50 PeakSurgeForwardCurrentCapability 500 80 140 160 I tpFSM ForwardVoltage 100 1000 tp Tj=25 500 non-repetitive sinewave Tj=150 200 100 1 2 3 4 5 PulseWidetpms 6 7 8.3 CAT.No.TJ 536 OUTLINE DIMENSIONS 22.1 -0.3 C3 -0.2 3.45 2 - 0.15 US4K 80R 18.5 -0.3 10 -0.15 TypeNo. R1.8 9771 3.6 -0.2 0.1 Datecode ControlNo. 2.5-0.2 -0.2 2.2 1 18.6 -0.8 2 - 0.3 2.05-0.2 Polarity 1.1 -0.1 2 3 4 0.1 0.5 -0.05 5.08 -0.3 5.08 -0.3 5.08 -0.3 1 2 3 4 Unit The level of quality of our products is intended for use in standard applications.OA and other office equipment, communication equipment, measuring instruments, home appliances, industrial equipment, etc.In the case these products are to be used in equipment or devices in which failure or malfunction of a product may directly affect human life or healthNuclear power control equipment, aerospace equipment, devices and systems for preserving life, transportation equipment, traffic control equipment, safety control devices, fire prevention/anti-theft equipment, combustion control equipment, etc., always make sure to contact us in advance. All specifications are subject to change without notice. Please contact us for the latest specifications before you order. Please use our products after confirming the details in the specifications and the application manuals. U.S.A Shindengen America, Inc. Head Office 161 Plaza La Vista Road, Camarillo, CA 93010 U.S.A. Phone:+1-805-445-8420 Fax:+1-805-445-8421 Chicago Office 2333 Waukegan Road, Suite 170 Bannockburn, IL. 60015 U.S.A. Phone:+1-847-444-1363 Fax:+1-847-444-0654 Europe Shindengen UK Ltd. Head Office Howard Court, 12 Tewin Road, Welwyn Garden City, Hertfordshire. AL7 1BW U.K. Phone:+44-1707-332992 Fax:+44-1707-332955 German Branch Kapell Strasse 6, D-40479, Dusseldorf, Germany Phone:+49-211-4919680 Fax:+49-211-4986499 Asia Shindengen Singapore PTE Ltd. 750D, Chai Chee Road, #05-01, Technopark@Chai Chee, Singapore 469004 Phone:+65-6445-0082 Fax:+65-6445-6089 ShindengenH.K.Co., Ltd. Head Office Suite 3206, 32/F, Tower 1, The Gateway, 25 Canton Road, TST, Kowloon, Hong Kong. Phone:+852-2317-1884 Fax:+852-2314-8561 Taipei Branch Room N1010, 10F, Chia-Hsin Bldg. 2 No. 96, Sec. 2, Chung Shan N. RD. Taipei, Taiwan R.O.C. Phone:+886-2-2560-3990 Fax:+886-2-2560-3991 Shanghai Liaison Office W504 Sun Plaza, No.88 Xian xia Road, Shanghai, 200336, China Phone:+86-21-6270-1173 Fax:+86-21-6270-0419 Shindengen Electric Mfg. Co., Ltd. Head Office New-Ohtemachi Bldg., 2-1 Ohtemachi 2-chome, Chiyoda-ku, Tokyo 100-0004, Japan Phone : +81-3-3279-4545, 4546, 4547 Fax : +81-3-3279-4519 Seoul Office Korea City Air-Terminal Bldg. 606, 159-6, Samsung-Dong, Kangnam-ku, Seoul, Korea Phone:+82-2-551-1431 Fax:+82-2-551-1432 ELECTRIC MFG. CO., LTD. URL http://www.shindengen.co.jp 07600NQ