Bridge diodes are being required to take up less space accompanying the reduced size of electronic
equipment. In order to respond to these needs, Shindengen has developed a new package in offering a
complete lineup of bridge diodes that can be used in a wide range of power supply environments.
  
USKB SERIES
●Rectified forward current : 4A（US4KB80R）, 6A（US6KB80R）, 8A（US8KB80R）,
（with heat sink）10A（US10KB80R）, 15A（US15KB80R）, 30A（US30KB80R）
●Large current capacity of 30A with compact package
●High IFSM and High Voltage
●UL approved Bridge Rectifier Diodes, registered in file number E142422
●High-density mounting for improved space efficiency through the use of SIP
（Single In-Line Package）
Features
Summary
Application
TV, Monitor, Switching power supply, PC, Audio, Printer
UL File No. E142422
CAT.No.TJ 536
Item
Symbol
StorageTemperature
●
Absolute Maximum Ratings
（
Tc=25
℃／
Unless otherwise specified
）
Tstg
OperationJunctionTemperature
Tj
MaximunReverseVoltage VRM
IFSM
PeakSurgeForwardCurrent
I2t
CurrentSquaredTime
MountingTorque TOR
Conditions Unit
US4KB80R US6KB80R US8KB80R
−
55〜150
150
800
℃
℃
V
A
A
A2s
A2s
kV
N・m
60Hzsinewave,Non-repetitive1cyclepeakvalue,
Tj=25℃
Withheatsink
Withoutheatsink
Tj=25℃,Perdiode
IFSM1Non
−
repetitive,Tj=25℃
（Recommendedtorque：0.5N・m）
DielectricStrength Vdis Terminalstocace,AC1minute
AverageRectifiedForwardCurrent
Io 60Hzsinewave,
Resistanceload
8
（Tc=108℃）
2.2
200
（Ta=26℃）
575
（tp=1ms）
●
Electrical Characteristics
（
Tc=25
℃／
Unless otherwise specified
）
VF
ForwardVoltage
ReverseCurrent IR
V
μA
℃/W
Pulsemeasurement,Perdiode
TypeNo.
VR=800V,Pulsemeasurement,Perdiode
θj c Junctiontocase,Withheatsink
θj a Junctiontoambient,Withoutheatsink
ThermalResistance θj l Junctiontolead,Withoutheatsink
MAX.1.00
MAX.2.8
US8K80R
（IF=4A）
4
（Tc=125℃）6
（Tc=116℃）
2.1
（Ta=30℃）2.1
（Ta=30℃）
150 175
245
（tp=3ms）470
（tp=1ms）
93
（3ms≦t＜8.3ms）
MAX.1.00
（IF=2A）MAX.1.00
（IF=3A）
MAX.3.5 MAX.3.0
MAX. 5
MAX. 35
MAX. 10
US4K80R US6K80R
112
2.0
0.8
（1ms≦t＜8.3ms）
166
（1ms≦t＜8.3ms）
StorageTemperature
●
Absolute Maximum Ratings
（
Tc=25
℃／
Unless otherwise specified
）
Tstg
OperationJunctionTemperature
Tj
MaximunReverseVoltage VRM
IFSM
PeakSurgeForwardCurrent
I2t
CurrentSquaredTime
MountingTorque TOR
US10KB80R US15KB80R US30KB80R
−
55〜150
150
800
10
℃
℃
V
A
A
kV
N・m
60Hzsinewave,Non
−
repetitive1cyclepeakvalue,
Tj=25℃
Withheatsink
Withoutheatsink
Tj=25℃,Perdiode
IFSM1Non-repetitive,Tj=25℃
（Recommendedtorque：0.5N・m）
DielectricStrength Vdis Terminalstocace,AC1minute
AverageRectifiedForwardCurrent
Io 60Hzsinewave,
Resistanceload
（Tc=100℃）15
（Tc=101℃）30
（Tc=97℃）
2
（Ta=28℃）2
（Ta=30℃）2.1
150 200 350
（Ta=27℃）
245
（tp=3ms）330
（tp=3ms）1000
（tp=1ms）
93
（3ms≦t＜8.3ms）
●
Electrical Characteristics
（
Tc=25
℃／
Unless otherwise specified
）
VF
ForwardVoltage
ReverseCurrent IR
V
μA
℃/W
Pulsemeasurement,Perdiode
TypeNo.
VR=800V,Pulsemeasurement,Perdiode
θj c Junctiontocase,Withheatsink
θj a Junctiontoambient,Withoutheatsink
ThermalResistance θj l Junctiontolead,Withoutheatsink
MAX.1.10
（IF=5A）MAX.1.10
（IF=7.5A）MAX.1.10
MAX.2.5 MAX.1.5
MAX. 5
MAX. 35
MAX. 10
MAX.0.8
U10K80R U15K80R U30K80R
（IF=15A）
166
2.0
0.8
（3ms≦t＜8.3ms）
510
（1ms≦t＜8.3ms）
RATINGS
UnitItem
Symbol
Conditions
CAT.No.TJ 536
CHARACTERISTIC DIAGRAMS
0
0
2
6
4
10
8
12
14
12 435 867
0
0.1
0.2
0.5
1
2
5
10
20
30
0.40.2 0.6 10.8 1.41.2 1.6
ForwardVoltage
0
0
2
4
6
8
10
12345
ForwardPowerDissipation
1
0
50
100
150
200
251020 10050
PeakSurgeForwardCurrentCapability
non
−
repetitive
sinewave
Tj=25℃
8.3ms 8.3ms
1cycle
I
FSM
0
0
1
3
2
5
4
6
7
20 40 8060 100 160120 140
DeratingCurveTc-Io
Tc
heatsink Tc
−
sensingpoint
0
0
0.5
1.5
1
2.5
2
3
20 40 8060 100 160120 140
DeratingCurveTa-Io
P.C.B
onglass
−
epoxysubstrate
solderingland3mm φ
3
50
60
70
80
90
100
200
300
400
500
45678.3
PeakSurgeForwardCurrentCapability
non
−
repetitive
sinewave
tp
I
（tp）
FSM
0
0.1
0.2
0.5
1
2
5
10
20
30
0.40.2 0.6 10.8 1.41.2 1.6
ForwardVoltage ForwardPowerDissipation
1
0
50
100
150
200
250
251020 10050
PeakSurgeForwardCurrentCapability
non
−
repetitive
sinewave
Tj=25℃
8.3ms 8.3ms
1cycle
I
FSM
0
0
0.5
1.5
1
2.5
2
3
20 40 8060 100 160120 140
DeratingCurveTa-Io
P.C.B
onglass
−
epoxysubstrate
solderingland3mm φ
0
0
2
4
6
8
10
20 40 8060 100 160120 140
DeratingCurveTc-Io
Tc
heatsink Tc
−
sensingpoint
1
50
100
200
500
1000
2
ForwardVoltage VF［V］AverageRectifiedForwardCurrent Io［A］ NumberofCycles ［cycle］
CaseTemperature Tc［℃］AmbientTemperature Ta［℃］ PulseWide tp［ms］
ForwardVoltage VF［V］AverageRectifiedForwardCurrent Io［A］ NumberofCycles ［cycle］
AmbientTemperature Ta［℃］ CaseTemperature Tc［℃］ PulseWide tp［ms］
34 6758.3
ForwardCurrent IF［A］
 ForwardPowerDissipation PF［W］
PeakSurgeForwardCurrent I
FSM
［A］
AverageRectifiedForwardCurrent Io［A］
AverageRectifiedForwardCurrent Io［A］
PeakSurgeForwardCurrent I
FSM1
［A］
ForwardCurrent IF［A］
 ForwardPowerDissipation PF［W］
PeakSurgeForwardCurrent I
FSM
［A］
AverageRectifiedForwardCurrent Io［A］
AverageRectifiedForwardCurrent Io［A］
PeakSurgeForwardCurrent I
FSM1
［A］
PeakSurgeForwardCurrentCapability
non
−
repetitive
sinewave
tp
I
（tp）
FSM
US4KB80R
US6KB80R
Tc=150℃［TYP］
Tc= 25℃［TYP］
Tc=150℃［TYP］
Tc= 25℃［TYP］
SIN
SIN
SIN
SIN
SIN
SIN
Tj=150℃
Tj=25℃
Tj=150℃
Tj=25℃
Pulsemeasurementperdiode
tp
TD=tp/T
Io
Tj=150℃
tp
TD=tp/T
Io
Tj=150℃
Sinewave
R-load
Withheatsink
Sinewave
R-load
Freeinair
Pulsemeasurementperdiode
Sinewave
R-load
Withheatsink
Sinewave
R-load
Freeinair
CAT.No.TJ 536
US8KB80R
US10KB80R
CHARACTERISTIC DIAGRAMS
0
0.1
0.2
0.5
1
2
5
10
20
50
0.40.2 0.6 10.8 1.41.2 1.6
0
0
2
6
4
10
8
12
14
20 40 8060 100 160120 140
0
0.1
0.2
1
2
5
20
50
0.40.2 0.6 10.8 1.41.2 1.6
ForwardVoltage ForwardPowerDissipation
PeakSurgeForwardCurrentCapability
DeratingCurveTc-Io
Tc
heatsink Tc
−
sensingpoint
0
0
0.5
1.5
1
2.5
2
3
20 40 8060 100 160120 140
DeratingCurveTa-Io
P.C.B
onglass
−
epoxysubstrate
solderingland3mm φ
PeakSurgeForwardCurrentCapability
ForwardVoltage ForwardPowerDissipation
0
0
0.5
1.5
1
2.5
2
3
20 40 8060 100 160120 140
DeratingCurveTa-Io
P.C.B
onglass
−
epoxysubstrate
solderingland3mm φ
DeratingCurveTc-Io
0
0
5
10
15
20
24 6810 1
0
50
100
150
300
200
250
251020 10050
non
−
repetitive
sinewave
Tj=25℃
8.3ms 8.3ms
1cycle
I
FSM
1
50
100
200
500
1000
2346758.3
non
−
repetitive
sinewave
tp
I
（tp）
FSM
0
0
5
10
15
20
25
30
246 10812 1
0
50
100
150
200
251020 10050
PeakSurgeForwardCurrentCapability
non
−
repetitive
sinewave
Tj=25℃
8.3ms 8.3ms
1cycle
I
FSM
0
0
2
6
4
12
10
8
14
16
20 40 8060 100 160120 140
Tc
heatsink Tc
−
sensingpoint
3
50
60
70
80
90
100
200
300
400
500
45678.3
PeakSurgeForwardCurrentCapability
non
−
repetitive
sinewave
tp
I
（tp）
FSM
Tj=150℃
Tj=25℃
Tj=150℃
Tj=25℃
ForwardCurrent IF［A］
 ForwardPowerDissipation PF［W］
PeakSurgeForwardCurrent I
FSM
［A］
AverageRectifiedForwardCurrent Io［A］
AverageRectifiedForwardCurrent Io［A］
PeakSurgeForwardCurrent I
FSM1
［A］
ForwardCurrent IF［A］
 ForwardPowerDissipation PF［W］
PeakSurgeForwardCurrent I
FSM
［A］
AverageRectifiedForwardCurrent Io［A］
AverageRectifiedForwardCurrent Io［A］
PeakSurgeForwardCurrent I
FSM1
［A］
ForwardVoltage VF［V］AverageRectifiedForwardCurrent Io［A］ NumberofCycles ［cycle］
CaseTemperature Tc［℃］AmbientTemperature Ta［℃］ PulseWide tp［ms］
ForwardVoltage VF［V］AverageRectifiedForwardCurrent Io［A］ NumberofCycles ［cycle］
AmbientTemperature Ta［℃］ CaseTemperature Tc［℃］ PulseWide tp［ms］
Tc=150℃［TYP］
Tc= 25℃［TYP］
Tc=150℃［TYP］
Tc= 25℃［TYP］
SIN
SIN SIN
SIN
SIN
SIN
tp
TD=tp/T
Io
Tj=150℃
tp
TD=tp/T
Io
Tj=150℃
Pulsemeasurementperdiode
Sinewave
R-load
Withheatsink
Sinewave
R-load
Freeinair
Pulsemeasurementperdiode
Sinewave
R-load
Withheatsink
Sinewave
R-load
Freeinair
CAT.No.TJ 536
US15KB80R
US30KB80R
CHARACTERISTIC DIAGRAMS
0
0
10
20
40
30
50
20 40 8060 100 160120 140
0
0.1
0.2
0.5
1
2
5
10
20
50
0.40.2 0.6 10.8 1.41.2 1.6
ForwardVoltage ForwardPowerDissipation
DeratingCurveTc-Io
Tc
heatsink Tc
−
sensingpoint
0
0
0.5
1.5
1
2.5
2
3
20 40 8060 100 160120 140
DeratingCurveTa-Io
P.C.B
onglass
−
epoxysubstrate
solderingland3mm φ
PeakSurgeForwardCurrentCapability
ForwardVoltage ForwardPowerDissipation
0
0
0.5
1.5
1
2.5
2
3
20 40 8060 100 160120 140
DeratingCurveTa-Io
P.C.B
onglass
−
epoxysubstrate
solderingland3mm φ
DeratingCurveTc-Io
PeakSurgeForwardCurrentCapability
0
0
5
10
15
20
25
30
35
40
5101520 1
0
50
100
150
200
250
251020 10050
PeakSurgeForwardCurrentCapability
non
−
repetitive
sinewave
Tj=25℃
8.3ms 8.3ms
1cycle
I
FSM
0
0
4
12
8
20
16
24
20 40 8060 100 160120 140
Tc
heatsink Tc
−
sensingpoint
0
0.1
0.2
0.5
1
2
5
10
20
100
50
0.40.2 0.6 10.8 1.41.2 1.6 1
0
100
200
300
400
500
251020 10050
PeakSurgeForwardCurrentCapability
non
−
repetitive
sinewave
Tj=25℃
8.3ms 8.3ms
1cycle
I
FSM
1
100
200
500
1000
2000
2543678.3
non
−
repetitive
sinewave
tp
I
（tp）
FSM
3
20
50
100
200
500
1000
46578.3
non
−
repetitive
sinewave
tp
I
（tp）
FSM
0
0
10
30
20
60
50
40
70
80
510 2015 25 4030 35
Tc
heatsink Tc
−
sensingpoint
Tj=150℃
Tj=25℃
Tj=150℃
Tj=25℃
ForwardCurrent IF［A］
 ForwardPowerDissipation PF［W］
PeakSurgeForwardCurrent I
FSM
［A］
AverageRectifiedForwardCurrent Io［A］
AverageRectifiedForwardCurrent Io［A］
PeakSurgeForwardCurrent I
FSM1
［A］
ForwardCurrent IF［A］
 ForwardPowerDissipation PF［W］
PeakSurgeForwardCurrent I
FSM
［A］
AverageRectifiedForwardCurrent Io［A］
AverageRectifiedForwardCurrent Io［A］
PeakSurgeForwardCurrent I
FSM1
［A］
ForwardVoltage VF［V］AverageRectifiedForwardCurrent Io［A］ NumberofCycles ［cycle］
CaseTemperature Tc［℃］AmbientTemperature Ta［℃］ PulseWide tp［ms］
ForwardVoltage VF［V］AverageRectifiedForwardCurrent Io［A］ NumberofCycles ［cycle］
AmbientTemperature Ta［℃］ CaseTemperature Tc［℃］ PulseWide tp［ms］
Tc=150℃［TYP］
Tc= 25℃［TYP］
Tc=150℃［TYP］
Tc= 25℃［TYP］
SIN
SIN SIN
SIN
SIN
SIN
tp
TD=tp/T
Io
Tj=150℃
tp
TD=tp/T
Io
Tj=150℃
Pulsemeasurementperdiode
Sinewave
R-load
Withheatsink
Sinewave
R-load
Freeinair
Pulsemeasurementperdiode
Sinewave
R-load
Withheatsink
Sinewave
R-load
Freeinair
CAT.No.TJ 536
C3
TypeNo.
Datecode
Unit：
ControlNo.
Polarity
22.1 0.3
＋
−
2.5
3.6
R1.8
0.2
＋
0.2
＋
−
18.6
10
2
0.8
＋
−
0.15
＋
−
18.5 0.3
＋
−
20.15
＋
−
0.3
＋
−
5.08 0.3
＋
− 5.08 0.3
＋
− 5.08
1.1
0.3
＋
−
0.1
＋
− 0.5 0.1
＋
0.05
−
3.45 0.2
＋
−
2.05 0.2
＋
−
2.2
0.2
＋
−
0.1
−
1 2 3 4
1 2 3 4
US4K 80R
9771
 
■The level of quality of our products is intended for use in standard applications.（OA and other office equipment, communication equipment, measuring instruments,
home appliances, industrial equipment, etc.） In the case these products are to be used in equipment or devices in which failure or malfunction of a product may
directly affect human life or health （Nuclear power control equipment, aerospace equipment, devices and systems for preserving life, transportation equipment,
traffic control equipment, safety control devices, fire prevention/anti-theft equipment, combustion control equipment, etc.）, always make sure to contact us in
advance.
■All specifications are subject to change without notice.
■Please contact us for the latest specifications before you order.
■Please use our products after confirming the details in the specifications and the application manuals.
U.S.A
Shindengen America, Inc.
Head Office
161 Plaza La Vista Road, Camarillo, CA 93010 U.S.A.
Phone:+1-805-445-8420 Fax:+1-805-445-8421
Chicago Office
2333 Waukegan Road, Suite 170 Bannockburn, IL. 60015 U.S.A.
Phone:+1-847-444-1363 Fax:+1-847-444-0654
Europe
Shindengen UK Ltd.
Head Office
Howard Court, 12 Tewin Road,
Welwyn Garden City, Hertfordshire. AL7 1BW U.K.
Phone:+44-1707-332992 Fax:+44-1707-332955
German Branch
Kapell Strasse 6, D-40479, Dusseldorf, Germany
Phone:+49-211-4919680 Fax:+49-211-4986499
Asia
Shindengen Singapore PTE Ltd.
750D, Chai Chee Road, #05-01,
Technopark@Chai Chee, Singapore 469004
Phone:+65-6445-0082 Fax:+65-6445-6089
Shindengen （H.K.） Co., Ltd.
Head Office
Suite 3206, 32/F, Tower 1, The Gateway, 25 Canton Road, TST,
Kowloon, Hong Kong.
Phone:+852-2317-1884 Fax:+852-2314-8561
Taipei Branch
Room N1010, 10F, Chia-Hsin Bldg. 2 No. 96, Sec. 2,
Chung Shan N. RD. Taipei, Taiwan R.O.C.
Phone:+886-2-2560-3990 Fax:+886-2-2560-3991
Shanghai Liaison Office
W504 Sun Plaza, No.88 Xian xia Road, Shanghai, 200336, China
Phone:+86-21-6270-1173 Fax:+86-21-6270-0419
Shindengen Electric Mfg. Co., Ltd.
Head Office
New-Ohtemachi Bldg., 2-1 Ohtemachi 2-chome, Chiyoda-ku,
Tokyo 100-0004, Japan
Phone : +81-3-3279-4545, 4546, 4547
Fax : +81-3-3279-4519
Seoul Office
Korea City Air-Terminal Bldg. 606, 159-6, Samsung-Dong,
Kangnam-ku, Seoul, Korea
Phone:+82-2-551-1431 Fax:+82-2-551-1432 【
URL
】
http://www.shindengen.co.jp
ELECTRIC MFG. CO., LTD.
OUTLINE DIMENSIONS
CAT.No.TJ 536
07600（NQ）