Super Sequencer and Monitor with Non-
Volatile Fault Recording
Preliminary Technical Data
ADM1168
Rev.
Pr. A
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other
rights of third parties that may result from its use. Specifications subject to change without notice. No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Trademarks and registered trademarks are the property of their respective owners.
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.
Tel: 781.329.4700 www.analog.com
Fax: 781.461.3113 ©2010 Analog Devices, Inc. All rights reserved.
FEATURES
Complete supervisory and sequencing solution for up to
8 supplies
16 event deep black box nonvolatile fault recording
8 supply fault detectors enable supervision of supplies to
<0.5% accuracy at all voltages at 25°C
<1.0% accuracy across all voltages and temperatures
4 selectable input attenuators allow supervision of supplies to
14.4 V on VH
6 V on VP1 to VP3 (VPx)
4 dual-function inputs, VX1 to VX4 (VXx)
High impedance input to supply fault detector with
thresholds between 0.573 V and 1.375 V
General-purpose logic input
8 programmable driver outputs, PDO1 to PDO8 (PDOx)
Open-collector with external pull-up
Push/pull output, driven to VDDCAP or VPx
Open collector with weak pull-up to VDDCAP or VPx
Internally charge-pumped high drive for use with external
N-FET (PDO1 to PDO6 only)
Sequencing engine (SE) implements state machine control of
PDO outputs
State changes conditional on input events
Enables complex control of boards
Power-up and power-down sequence control
Fault event handling
Interrupt generation on warnings
Watchdog function can be integrated in SE
Program software control of sequencing through SMBus
Device powered by the highest of VPx, VH for improved
redundancy
User EEPROM: 256 bytes
Industry-standard 2-wire bus interface (SMBus)
Guaranteed PDO low with VH, VPx = 1.2 V
Available in 32-lead 7 mm × 7 mm LQFP
APPLICATIONS
Central office systems
Servers/routers
Multivoltage system line cards
DSP/FPGA supply sequencing
In-circuit testing of margined supplies
For more information about the ADM1168 register map,
refer to the AN-721 Application Note at www.analog.com.
FUNCTIONAL BLOCK DIAGRAM
04734-001
PDO7
PDO8
PDOGND
VDD
ARBITRATOR
GNDVCCP
VX1
VX2
VX3
VX4
VP1
VP2
VP3
VH
AGND
V
DDC
A
P
PROGRAMMABLE
RESET
GENERATORS
(SFDs)
DUAL-
FUNCTION
INPUTS
(LOGIC INPUTS
OR
SFDs)
SEQUENCING
ENGINE
CONFIGURABLE
OUTPUT
DRIVERS
(LV CAPABLE
OF DRIVING
LOGIC SIGNALS)
PDO1
PDO2
PDO3
PDO4
PDO5
PDO6
S
D
A
S
C
L
A
1
A
0
SMBus
INTERFACE
R
E
F
O
U
T
R
E
F
G
N
D
VREF
EEPROM
ADM1168
CONFIGURABLE
OUTPUT
DRIVERS
(HV CAPABLE OF
DRIVING GATES
OF N-FET)
FAULT RECORDING
Figure 1.
GENERAL DESCRIPTION
The ADM1168 Super Sequencer® is a configurable supervisory/
sequencing device that offers a single-chip solution for supply
monitoring and sequencing in multiple supply systems.
The device also provides up to eight programmable inputs for
monitoring undervoltage faults, overvoltage faults, or out-of-
window faults on up to eight supplies. In addition, eight
programmable outputs can be used as logic enables. Six of these
programmable outputs can also provide up to a 12 V output for
driving the gate of an N-FET that can be placed in the path of
a supply.
The logical core of the device is a sequencing engine. This state-
machine-based construction provides up to 63 different states.
This design enables very flexible sequencing of the outputs,
based on the condition of the inputs.
A block of nonvolatile EEPROM is available that can be used to
store user-defined information and may also be used to hold a
number of fault records that are written by the sequencing engine
defined by the user when a particular fault or sequence occurs.
The ADM1168 is controlled via configuration data that can be
programmed into an EEPROM. The whole configuration can
be programmed using an intuitive GUI-based software package
provided by Analog Devices, Inc.
ADM1168 Preliminary Technical Data
Rev. Pr. A | Page 2 of 28
TABLE OF CONTENTS
Features .............................................................................................. 1
Applications ....................................................................................... 1
Functional Block Diagram .............................................................. 1
General Description ......................................................................... 1
Revision History ............................................................................... 2
Detailed Block Diagram .................................................................. 3
Specifications ..................................................................................... 4
Absolute Maximum Ratings ............................................................ 6
Thermal Resistance ...................................................................... 6
ESD Caution .................................................................................. 6
Pin Configuration and Function Descriptions ............................. 7
Typical Performance Characteristics ............................................. 8
Powering the ADM1168................................................................. 10
Inputs ................................................................................................ 11
Supply Supervision ..................................................................... 11
Programming the Supply Fault Detectors ............................... 11
Input Comparator Hysteresis .................................................... 12
Input Glitch Filtering ................................................................. 12
Supply Supervision with VXx Inputs ....................................... 12
VXx Pins as Digital Inputs ........................................................ 13
Outputs ............................................................................................ 14
Supply Sequencing Through Configurable Output Drivers . 14
Default Output Configuration .................................................. 14
Sequencing Engine ......................................................................... 16
Overview ..................................................................................... 16
Warnings...................................................................................... 16
SMBus Jump (Unconditional Jump) ........................................ 16
Sequencing Engine Application Example ............................... 17
Fault and Status Reporting ........................................................ 18
Nonvolatile Black Box Fault Recording................................... 18
Black Box Writes with No External Supply ............................ 19
Applications Diagram .................................................................... 20
Communicating with the ADM1168 ........................................... 21
Configuration Download at Power-Up ................................... 21
Updating the Configuration ..................................................... 21
Updating the Sequencing Engine ............................................. 22
Internal Registers ........................................................................ 22
EEPROM ..................................................................................... 22
Serial Bus Interface..................................................................... 23
SMBus Protocols for RAM and EEPROM .............................. 24
Write Operations ........................................................................ 25
Read Operations ......................................................................... 26
Outline Dimensions ....................................................................... 28
Ordering Guide .......................................................................... 28
REVISION HISTORY
11/10—Revision Pr. A: Preliminary Version
Preliminary Technical Data ADM1168
Rev. Pr. A | Page 3 of 28
DETAILED BLOCK DIAGRAM
04734-002
GPI SIGNAL
CONDITIONING
SFD
GPI SIGNAL
CONDITIONING
SFD
SFD
SFD
SELECTABLE
ATTENUATOR
SELECTABLE
ATTENUATOR
DEVICE
CONTROLLER
OSC
EEPROM
SDA SCL A1 A0
SMBus
INTERFACE
ADM1168
CONFIGURABLE
OUTPUT DRIVER
(HV)
PDO1
PDO2
PDOGND
PDO3
GND
PDO4
PDO5
CONFIGURABLE
OUTPUT DRIVER
(HV)
PDO6
CONFIGURABLE
OUTPUT DRIVER
(LV)
PDO7
CONFIGURABLE
OUTPUT DRIVER
(LV)
PDO8
SEQUENCING
ENGINE
VX2
VX3
VP2
VP3
VH
VP1
VX1
AGND
VX4
VDD
ARBITRATOR
VCCP
REG 5.25V
CHARGE PUMP
REFOUT REFGND
VREF
V
DDCAP
Figure 2. Detailed Block Diagram
ADM1168 Preliminary Technical Data
Rev. Pr. A | Page 4 of 28
SPECIFICATIONS
VH = 3.0 V to 14.4 V
1
, VPx = 3.0 V to 6.0 V
1
, T
A
= −40°C to +85°C, unless otherwise noted.
Table 1.
Parameter Min Typ Max Unit Test Conditions/Comments
POWER SUPPLY ARBITRATION
VH, VPx 3.0 V Minimum supply required on one of the VH, VPx pins
VPx 6.0 V Maximum VDDCAP = 5.1 V typical
VH 14.4 V VDDCAP = 4.75 V
VDDCAP 2.7 4.75 5.4 V Regulated LDO output
C
VDDCAP
10 µF Minimum recommended decoupling capacitance
POWER SUPPLY
Supply Current, I
VH
, I
VPx
4.2 6 mA VDDCAP = 4.75 V, PDO1 to PDO8 off
Additional Currents
All PDOx FET Drivers On 1 mA VDDCAP = 4.75 V, PDO1 to PDO6 loaded with 1 µA each,
PDO7 to PDO8 off
Current Available from VDDCAP 2 mA Maximum additional load that can be drawn from all
PDO pull-ups to VDDCAP
EEPROM Erase Current 10 mA 1 ms duration only, VDDCAP = 3 V
SUPPLY FAULT DETECTORS
VH Pin
Input Impedance 52 k
Input Attenuator Error ±0.05 % Midrange and high range
Detection Ranges
High Range 6 14.4 V
Midrange 2.5 6 V
VPx Pins
Input Impedance 52 k
Input Attenuator Error ±0.05 % Low range and midrange
Detection Ranges
Midrange 2.5 6 V
Low Range 1.25 3 V
Ultralow Range 0.573 1.375 V No input attenuation error
VXx Pins
Input Impedance 1 MΩ
Detection Ranges
Ultralow Range 0.573 1.375 V No input attenuation error
Absolute Accuracy ±1 % VREF error + DAC nonlinearity + comparator offset error
Threshold Resolution 8 Bits
Digital Glitch Filter 0 µs Minimum programmable filter length
100 µs Maximum programmable filter length
REFERENCE OUTPUT
Reference Output Voltage 2.043 2.048 2.053 V No load
Load Regulation −0.25 mV Sourcing current
0.25 mV Sinking current
Minimum Load Capacitance 1 µF Capacitor required for decoupling, stability
PSRR 60 dB DC
PROGRAMMABLE DRIVER OUTPUTS
High Voltage (Charge Pump) Mode
(PDO1 to PDO6)
Output Impedance 500 kΩ
Preliminary Technical Data ADM1168
Rev. Pr. A | Page 5 of 28
Parameter Min Typ Max Unit Test Conditions/Comments
V
OH
11 12.5 14 V I
OH
= 0 µA
10.5 12 13.5 V I
OH
= 1 µA
I
OUTAVG
20 µA 2 V < V
OH
< 7 V
Standard (Digital Output) Mode
(PDO1 to PDO8)
V
OH
2.4 V V
PU
(pull-up to VDDCAP or VPx) = 2.7 V, I
OH
= 0.5 mA
4.5 V V
PU
to VPx = 6.0 V, I
OH
= 0 mA
V
PU
− 0.3 V V
PU
≤ 2.7 V, I
OH
= 0.5 mA
V
OL
0 0.50 V I
OL
= 20 mA
I
OL2
20 mA Maximum sink current per PDO pin
I
SINK2
60 mA Maximum total sink for all PDO pins
R
PULL-UP
16 20 29 kΩ Internal pull-up
I
SOURCE
(VPx)
2
2 mA Current load on any VPx pull-ups, that is, total source
current available through any number of PDO pull-up
switches configured onto any one VPx pin
Three-State Output Leakage Current 10 µA V
PDO
= 14.4 V
Oscillator Frequency 90 100 110 kHz All on-chip time delays derived from this clock
DIGITAL INPUTS (VXx, A0, A1)
Input High Voltage, V
IH
2.0 V Maximum V
IN
= 5.5 V
Input Low Voltage, V
IL
0.8 V Maximum V
IN
= 5.5 V
Input High Current, I
IH
−1 µA V
IN
= 5.5 V
Input Low Current, I
IL
1 µA V
IN
= 0 V
Input Capacitance 5 pF
Programmable Pull-Down Current,
I
PULL-DOWN
20 µA VDDCAP = 4.75 V, T
A
= 25°C, if known logic state is
required
SERIAL BUS DIGITAL INPUTS (SDA, SCL)
Input High Voltage, V
IH
2.0 V
Input Low Voltage, V
IL
0.8 V
Output Low Voltage, V
OL2
0.4 V I
OUT
= −3.0 mA
SERIAL BUS TIMING
Clock Frequency, f
SCLK
400 kHz
Bus Free Time, t
BUF
1.3 µs
Start Setup Time, t
SU;STA
0.6 µs
Stop Setup Time, t
SU;STO
0.6 µs
Start Hold Time, t
HD;STA
0.6 µs
SCL Low Time, t
LOW
1.3 µs
SCL High Time, t
HIGH
0.6 µs
SCL, SDA Rise Time, t
r
300 µs
SCL, SDA Fall Time, t
f
300 µs
Data Setup Time, t
SU;DAT
100 ns
Data Hold Time, t
HD;DAT
250 ns
Input Low Current, I
IL
1 µA V
IN
= 0 V
SEQUENCING ENGINE TIMING
State Change Time 10 µs
1
At least one of the VH, VPx pins must be ≥3.0 V to maintain the device supply on VDDCAP.
2 Specification is not production tested but is supported by characterization data at initial product release.
ADM1168 Preliminary Technical Data
Rev. Pr. A | Page 6 of 28
ABSOLUTE MAXIMUM RATINGS
Table 2.
Parameter Rating
Voltage on VH Pin 16 V
Voltage on VPx Pins 7 V
Voltage on VXx Pins −0.3 V to +6.5 V
Voltage on A0, A1 Pins −0.3 V to +7 V
Voltage on REFOUT Pin 5 V
Voltage on VDDCAP, VCCP Pins 6.5 V
Voltage on PDOx Pins 16 V
Voltage on SDA, SCL Pins 7 V
Voltage on GND, AGND, PDOGND,
REFGND Pins
−0.3 V to +0.3 V
Input Current at Any Pin ±5 mA
Package Input Current ±20 mA
Maximum Junction Temperature (T
J
max) 150°C
Storage Temperature Range −65°C to +150°C
Lead Temperature,
Soldering Vapor Phase, 60 sec
215°C
ESD Rating, All Pins 2000 V
Stresses above those listed under Absolute Maximum Ratings
may cause permanent damage to the device. This is a stress
rating only; functional operation of the device at these or any
other conditions above those indicated in the operational
section of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect
device reliability.
THERMAL RESISTANCE
θ
JA
is specified for the worst-case conditions, that is, a device
soldered in a circuit board for surface-mount packages.
Table 3. Thermal Resistance
Package Type θ
JA
Unit
32-Lead LQFP 54 °C/W
ESD CAUTION
Preliminary Technical Data ADM1168
Rev. Pr. A | Page 7 of 28
PIN CONFIGURATION AND FUNCTION DESCRIPTIONS
04734-003
1 24
25
32
8
9
17
16
VX1
VX2
VX3
VX4
VP1
VP2
VP3
VH
PDO1
PDO2
PDO3
PDO4
PDO5
PDO6
PDO7
PDO8
GND
VDDCAP
SDA
SCL
A1
A0
VCCP
PDOGN
D
AGND
FGND
NC
FOUT
NC
NC
NC
NC
NC = NO CONNECT
PIN 1
INDICATOR
RE
RE
ADM1168
TOP VIEW
(Not to Scale)
Figure 3. Pin Configuration
Table 4. Pin Function Descriptions
Pin Number Mnemonic Description
11, 13 to 16 NC No Connect
1 to 4 VX1 to VX4
(VXx)
High Impedance Inputs to Supply Fault Detectors. Fault thresholds can be set from 0.573 V to 1.375 V.
Alternatively, these pins can be used as general-purpose digital inputs.
5 to 7 VP1 to VP3
(VPx)
Low Voltage Inputs to Supply Fault Detectors. Three input ranges can be set by altering the input
attenuation on a potential divider connected to these pins, the output of which connects to a supply fault
detector. These pins allow thresholds from 2.5 V to 6.0 V, from 1.25 V to 3.00 V, and from 0.573 V to 1.375 V.
8 VH High Voltage Input to Supply Fault Detectors. Three input ranges can be set by altering the input
attenuation on a potential divider connected to this pin, the output of which connects to a supply fault
detector. This pin allows thresholds from 6.0 V to 14.4 V and from 2.5 V to 6.0 V.
9 AGND
1
Ground Return for Input Attenuators.
10 REFGND
1
Ground Return for On-Chip Reference Circuits.
12 REFOUT Reference Output, 2.048 V. Note that the capacitor must be connected between this pin and REFGND. A 10
µF capacitor is recommended for this purpose.
17 to 24 PDO8 to
PDO1
Programmable Output Drivers.
25 PDOGND
1
Ground Return for Output Drivers.
26 VCCP Central Charge-Pump Voltage of 5.25 V. A reservoir capacitor must be connected between this pin and GND.
A 10 µF capacitor is recommended for this purpose.
27 A0 Logic Input. This pin sets the seventh bit of the SMBus interface address.
28 A1 Logic Input. This pin sets the sixth bit of the SMBus interface address.
29 SCL SMBus Clock Pin. Bidirectional open drain requires external resistive pull-up.
30 SDA SMBus Data Pin. Bidirectional open drain requires external resistive pull-up.
31 VDDCAP Device Supply Voltage. Linearly regulated from the highest of the VPx andVH pins to a typical of 4.75 V. Note
that the capacitor must be connected between this pin and GND. A 10 µF capacitor is recommended for this
purpose.
32 GND
1
Supply Ground.
1 In a typical application, all ground pins are connected together.
ADM1168 Preliminary Technical Data
Rev. Pr. A | Page 8 of 28
TYPICAL PERFORMANCE CHARACTERISTICS
6
0
1
2
3
4
5
0 654321
04734-050
VVP1 (V)
VVDDCAP (V)
Figure 4. V
VDDCAP
vs. V
VP1
6
0
1
2
3
4
5
0 161412108642
04734-051
VVH (V)
VVDDCAP (V)
Figure 5. V
VDDCAP
vs. V
VH
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0
0 1 2 3 4 5 6
04734-052
VVP1 (V)
IVP1 (mA)
Figure 6. I
VP1
vs. V
VP1
(VP1 as Supply)
180
160
140
120
100
80
60
40
20
0
0 1 2 3 4 5 6
04734-053
VVP1 (V)
IVP1 (µA)
Figure 7. I
VP1
vs. V
VP1
(VP1 Not as Supply)
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0
0 161412108642
04734-054
VVH (V)
IVH (mA)
Figure 8. I
VH
vs. V
VH
(VH as Supply)
350
300
250
200
150
100
50
0
0 654321
04734-055
VVH (V)
IVH (µA)
Figure 9. I
VH
vs. V
VH
(VH Not as Supply)
Preliminary Technical Data ADM1168
Rev. Pr. A | Page 9 of 28
14
12
10
8
6
4
2
0
0 15.012.510.07.55.02.5
04734-056
ILOAD (µA)
CHARGE-PUMPED VPDO1 (V)
Figure 10. Charge-Pumped V
PDO1
(FET Drive Mode) vs. I
LOAD
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0
0 654321
04734-057
ILOAD (mA)
VPDO1 (V)
VP1 = 5V
VP1 = 3V
Figure 11. V
PDO1
(Strong Pull-Up to VPx) vs. I
LOAD
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0
0 605040302010
04734-058
ILOAD A)
VPDO1 (V)
VP1 = 5V
VP1 = 3V
Figure 12. V
PDO1
(Weak Pull-Up to VPx) vs. I
LOAD
2.058
2.038
2.043
2.048
2.053
–40 –20 0 20 40 60 10080
04734-061
TEMPERATURE (°C)
REFOUT (V)
VP1 = 3.0V
VP1 = 4.75V
Figure 13. REFOUT vs. Temperature
ADM1168 Preliminary Technical Data
Rev. Pr. A | Page 10 of 28
POWERING THE ADM1168
The ADM1168 is powered from the highest voltage input on either
the positive-only supply inputs (VPx) or the high voltage supply
input (VH). This technique offers improved redundancy because
the device is not dependent on any particular voltage rail to keep
it operational. The same pins are used for supply fault detection
(see the Supply Supervision section). A V
DD
arbitrator on the
device chooses which supply to use. The arbitrator can be
considered an OR’ing of four low dropout regulators (LDOs)
together. A supply comparator chooses the highest input to
provide the on-chip supply. There is minimal switching loss
with this architecture (~0.2 V), resulting in the ability to power
the ADM1168 from a supply as low as 3.0 V. Note that the supply
on the VXx pins cannot be used to power the device.
An external capacitor to GND is required to decouple the on-chip
supply from noise. This capacitor should be connected to the
VDDCAP pin, as shown in Figure 14. The capacitor has another
use during brownouts (momentary loss of power). Under these
conditions, when the input supply (VPx or VH) dips transiently
below V
DD
, the synchronous rectifier switch immediately turns off
so that it does not pull V
DD
down. The V
DD
capacitor can then
act as a reservoir to keep the device active until the next highest
supply takes over the powering of the device. A 10 µF capacitor is
recommended for this reservoir/decoupling function.
The value of the VDDCAP capacitor may be increased if it is
necessary to guarantee a complete fault record is written into
EEPROM should all supplies fail. The value of the capacitor to
use is discussed in the section Black Box Writes with No
External Supply.
The VH input pin can accommodate supplies up to 14.4 V, which
allows the ADM1168 to be powered using a 12 V backplane supply.
In cases where this 12 V supply is hot swapped, it is recommended
that the ADM1168 not be connected directly to the supply. Suitable
precautions, such as the use of a hot swap controller, or RC filter
network, should be taken to protect the device from transients
that could cause damage during hot swap events.
When two or more supplies are within 100 mV of each other,
the supply that first takes control of V
DD
keeps control. For
example, if VP1 is connected to a 3.3 V supply, V
DD
powers up
to approximately 3.1 V through VP1. If VP2 is then connected
to another 3.3 V supply, VP1 still powers the device, unless VP2
goes 100 mV higher than VP1.
SUPPLY
COMPARATOR
IN
EN
OUT
4.75V
LDO
IN
EN
OUT
4.75V
LDO
IN
EN
OUT
4.75V
LDO
IN
EN
OUT
4.75V
LDO
VH
VP3
VP2
VP1
VDDCAP
INTERNAL
DEVICE
SUPPLY
04734-022
Figure 14. V
DD
Arbitrator Operation
Preliminary Technical Data ADM1168
Rev. Pr. A | Page 11 of 28
INPUTS
SUPPLY SUPERVISION
The ADM1168 has eight programmable inputs. Four of these are
dedicated supply fault detectors (SFDs). These dedicated inputs
are called VH and VPx (VP1 to VP3) by default. The other four
inputs are labeled VXx (VX1 to VX4) and have dual functionality.
They can be used either as SFDs, with functionality similar to the
VH and VPx, or as CMOS-/TTL-compatible logic inputs to the
device. Therefore, the ADM1168 can have up to eight analog
inputs, a minimum of four analog inputs and four digital inputs,
or a combination thereof. If an input is used as an analog input,
it cannot be used as a digital input. Therefore, a configuration
requiring eight analog inputs has no available digital inputs.
Table 6 shows the details of each input.
PROGRAMMING THE SUPPLY FAULT DETECTORS
The ADM1168 can have up to eight SFDs on its eight input
channels. These highly programmable reset generators enable the
supervision of up to eight supply voltages. The supplies can be as
low as 0.573 V and as high as 14.4 V. The inputs can be configured
to detect an undervoltage fault (the input voltage drops below a
preprogrammed value), an overvoltage fault (the input voltage
rises above a preprogrammed value), or an out-of-window fault
(the input voltage is outside a preprogrammed range). The thresh-
olds can be programmed to an 8-bit resolution in registers provided
in the ADM1168. This translates to a voltage resolution that is
dependent on the range selected.
The resolution is given by
Step Size = Threshold Range/255
Therefore, if the high range is selected on VH, the step size can
be calculated as follows:
(14.4 V − 6.0 V)/255 = 32.9 mV
Table 5 lists the upper and lower limits of each available range,
the bottom of each range (V
B
), and the range itself (V
R
).
Table 5. Voltage Range Limits
Voltage Range (V) V
B
(V) V
R
(V)
0.573 to 1.375 0.573 0.802
1.25 to 3.00 1.25 1.75
2.5 to 6.0 2.5 3.5
6.0 to 14.4 6.0 8.4
The threshold value required is given by
V
T
= (V
R
× N)/255 + V
B
where:
V
T
is the desired threshold voltage (undervoltage or overvoltage).
V
R
is the voltage range.
N is the decimal value of the 8-bit code.
V
B
is the bottom of the range.
Reversing the equation, the code for a desired threshold is given by
N = 255 × (V
T
V
B
)/V
R
For example, if the user wants to set a 5 V overvoltage threshold
on VP1, the code to be programmed in the PS1OVTH register
(as discussed in the AN-721 Application Note) is given by
N = 255 × (5 − 2.5)/3.5
Therefore, N = 182 (1011 0110 or 0xB6).
ADM1168 Preliminary Technical Data
Rev. Pr. A | Page 12 of 28
INPUT COMPARATOR HYSTERESIS
The UV and OV comparators shown in Figure 15 are always
monitoring VPx. To avoid chatter (multiple transitions when the
input is very close to the set threshold level), these comparators
have digitally programmable hysteresis. The hysteresis can be
programmed up to the values shown in Table 6.
04734-023
+
+
UV
COMPARATOR
VREF
FAULT TYPE
SELECT
OV
COMPARATOR
FAULT
OUTPUT
GLITCH
FILTER
VPx
MID
LOW
RANGE
SELECT
ULTRA
LOW
Figure 15. Supply Fault Detector Block
The hysteresis is added after a supply voltage goes out of
tolerance. Therefore, the user can program the amount above
the undervoltage threshold to which the input must rise before
an undervoltage fault is deasserted. Similarly, the user can program
the amount below the overvoltage threshold to which an input
must fall before an overvoltage fault is deasserted.
Table 6. Input Functions, Thresholds, and Ranges
Input Function Voltage Range (V) Maximum Hysteresis Voltage Resolution (mV) Glitch Filter (µs)
VH High Voltage Analog Input 2.5 to 6.0 425 mV 13.7 0 to 100
6.0 to 14.4 1.02 V 32.9 0 to 100
VPx Positive Analog Input 0.573 to 1.375 97.5 mV 3.14 0 to 100
1.25 to 3.00 212 mV 6.8 0 to 100
2.5 to 6.0 425 mV 13.7 0 to 100
VXx High-Z Analog Input 0.573 to 1.375 97.5 mV 3.14 0 to 100
Digital Input 0 to 5.0 Not applicable Not applicable 0 to 100
The hysteresis value is given by
V
HYST
= V
R
× N
THRESH
/255
where:
V
HYST
is the desired hysteresis voltage.
N
THRESH
is the decimal value of the 5-bit hysteresis code.
Note that N
THRESH
has a maximum value of 31. The maximum
hysteresis for the ranges is listed in Table 6.
INPUT GLITCH FILTERING
The final stage of the SFDs is a glitch filter. This block provides
time-domain filtering on the output of the SFD comparators,
which allows the user to remove any spurious transitions such
as supply bounce at turn-on. The glitch filter function is in addition
to the digitally programmable hysteresis of the SFD comparators.
The glitch filter timeout is programmable up to 100 µs.
For example, when the glitch filter timeout is 100 µs, any pulse
appearing on the input of the glitch filter block that is less than
100 µs in duration is prevented from appearing on the output of
the glitch filter block. Any input pulse that is longer than 100 µs
appears on the output of the glitch filter block. The output is
delayed with respect to the input by 100 µs. The filtering
process is shown in Figure 16.
04734-024
t
0
t
GF
t
0
t
GF
t
0
t
GF
t
0
t
GF
INPUT
INPUT PULSE SHORTER
THAN GLITCH FILTER TIMEOUT
INPUT PULSE LONGER
THAN GLITCH FILTER TIMEOUT
OUTPUT
PROGRAMMED
TIMEOUT
PROGRAMMED
TIMEOUT
INPUT
OUTPUT
Figure 16. Input Glitch Filter Function
SUPPLY SUPERVISION WITH VXx INPUTS
The VXx inputs have two functions. They can be used as either
supply fault detectors or as digital logic inputs. When selected as
analog (SFD) inputs, the VXx pins have functionality that is very
similar to the VH and VPx pins. The primary difference is that the
VXx pins have only one input range: 0.573 V to 1.375 V.
Therefore, these inputs can directly supervise only the very low
supplies. However, the input impedance of the VXx pins is high,
Preliminary Technical Data ADM1168
Rev. Pr. A | Page 13 of 28
allowing an external resistor divide network to be connected to
the pin. Thus, potentially any supply can be divided down into
the input range of the VXx pin and supervised. This enables the
ADM1168 to monitor other supplies, such as +24 V, +48 V,
and −5 V.
An additional supply supervision function is available when the
VXx pins are selected as digital inputs. In this case, the analog
function is available as a second detector on each of the dedicated
analog inputs, VPx and VH. The analog function of VX1 is
mapped to VP1, VX2 is mapped to VP2, and so on. VX4 is
mapped to VH. In this case, these SFDs can be viewed as secondary
or warning SFDs.
The secondary SFDs are fixed to the same input range as
the primary SFDs. They are used to indicate warning levels
rather than failure levels. This allows faults and warnings to
be generated on a single supply using only one pin. For
example, if VP1 is set to output a fault when a 3.3 V supply
drops to 3.0 V, VX1 can be set to output a warning at 3.1 V.
Warning outputs are available for readback from the status
registers. They are also ORed together and fed into the SE,
allowing warnings to generate interrupts on the PDOs.
Therefore, in this example, if the supply drops to 3.1 V, a
warning is generated, and remedial action can be taken before
the supply drops out of tolerance.
VXx PINS AS DIGITAL INPUTS
As discussed in the Supply Supervision with VXX Inputs section,
the VXx input pins on the ADM1168 have dual functionality.
The second function is as a digital logic input to the device.
Therefore, the ADM1168 can be configured for up to four digital
inputs. These inputs are TTL-/CMOS-compatible inputs. Standard
logic signals can be applied to the pins: RESET from reset
generators, PWRGD signals, fault flags, manual resets, and more.
These signals are available as inputs to the SE and, therefore, can
be used to control the status of the PDOs. The inputs can be
configured to detect either a change in level or an edge.
When configured for level detection, the output of the digital
block is a buffered version of the input. When configured for
edge detection, a pulse of programmable width is output from
the digital block, once the logic transition is detected. The width
is programmable from 0 µs to 100 µs.
The digital blocks feature the same glitch filter function that is
available on the SFDs. This function enables the user to ignore
spurious transitions on the inputs. For example, the filter can be
used to debounce a manual reset switch.
When configured as digital inputs, each VXx pin has a weak
(10 µA) pull-down current source available for placing the input
into a known condition, even if left floating. The current source,
if selected, weakly pulls the input to GND.
04734-027
DETECTOR
VXx
(DIGI
TAL INPUT)
GLITCH
FILTER
VREF = 1.4V
TO
SEQUENCING
ENGINE
+
Figure 17. VXx Digital Input Function
ADM1168 Preliminary Technical Data
Rev. Pr. A | Page 14 of 28
OUTPUTS
SUPPLY SEQUENCING THROUGH
CONFIGURABLE OUTPUT DRIVERS
Supply sequencing is achieved with the ADM1168 using the
programmable driver outputs (PDOs) on the device as control
signals for supplies. The output drivers can be used as logic
enables or as FET drivers.
The sequence in which the PDOs are asserted (and, therefore,
the supplies are turned on) is controlled by the sequencing
engine (SE). The SE determines what action is taken with the
PDOs, based on the condition of the ADM1168 inputs. Therefore,
the PDOs can be set up to assert when the SFDs are in tolerance,
the correct input signals are received on the VXx digital pins,
and no warnings are received from any of the inputs of the
device. The PDOs can be used for a variety of functions. The
primary function is to provide enable signals for LDOs or dc-to-dc
converters that generate supplies locally on a board. The PDOs
can also be used to provide a PWRGD signal, when all the SFDs
are in tolerance, or a RESET output if one of the SFDs goes out
of specification (this can be used as a status signal for a DSP,
FPGA, or other microcontroller).
The PDOs can be programmed to pull up to a number of
different options. The outputs can be programmed as follows:
Open drain (allowing the user to connect an external pull-
up resistor).
Open drain with weak pull-up to V
DD
.
Open drain with strong pull-up to V
DD
.
Open drain with weak pull-up to VPx.
Open drain with strong pull-up to VPx.
Strong pull-down to GND.
Internally charge-pumped high drive
(12 V, PDO1 to PDO6 only).
The last option (available only on PDO1 to PDO6) allows the
user to directly drive a voltage high enough to fully enhance an
external N-FET, which is used to isolate, for example, a card-side
voltage from a backplane supply (a PDO can sustain greater
than 10.5 V into a 1 µA load). The pull-down switches can also
be used to drive status LEDs directly.
The data driving each of the PDOs can come from one of three
sources. The source can be enabled in the PDOxCFG configu-
ration register (see the AN-721 Application Note for details).
The data sources are as follows:
Output from the SE.
Directly from the SMBus. A PDO can be configured so the
SMBus has direct control over it. This enables software
control of the PDOs. Therefore, a microcontroller can be
used to initiate a software power-up/power-down sequence.
On-chip clock. A 100 kHz clock is generated on the device.
This clock can be made available on any of the PDOs. It
can be used, for example, to clock an external device such
as an LED.
DEFAULT OUTPUT CONFIGURATION
All of the internal registers in an unprogrammed ADM1168
device from the factory are set to 0. Because of this, the PDOx pins
are pulled to GND by a weak (20 kΩ) on-chip pull-down resistor.
As the input supply to the ADM1168 ramps up on VPx or VH,
all PDOx pins behave as follows:
Input supply = 0 V to 1.2 V. PDOs high impedance.
Input supply = 1.2 V to 2.7 V. PDOs pulled to GND by
a weak (20 kΩ) on-chip pull-down resistor.
Supply > 2.7 V. Factory programmed devices continue to pull
all PDOs to GND by a weak (20 kΩ) on-chip pull-down
resistor. Programmed devices download current EEPROM
configuration data, and the programmed setup is latched. The
PDO then goes to the state demanded by the configuration,
providing a known condition for the PDOs during power-up.
The internal pull-down can be overdriven with an external pull-
up of suitable value tied from the PDOx pin to the required pull-up
voltage. The 20 kΩ resistor must be accounted for in calculating
a suitable value. For example, if PDOx must be pulled up to 3.3 V,
and 5 V is available as an external supply, the pull-up resistor
value is given by
3.3 V = 5 V × 20 kΩ/(R
UP
+ 20 kΩ)
Therefore,
R
UP
= (100 kΩ − 66 kΩ)/3.3 V = 10 kΩ
ADM1168 Preliminary Technical Data
Rev. Pr. A | Page 15 of 28
04734-028
PDO
SE DATA
CFG4 CFG5 CFG6
SMBus D
ATA
CLK DATA
10
20k
10
20k
VP1
SEL
VP4
10
20k
VDD
VFET (PDO1
T
O PDO6 ON
L
Y)
20k
Figure 18. Programmable Driver Output
ADM1168 Preliminary Technical Data
Rev. Pr. A | Page 16 of 28
SEQUENCING ENGINE
OVERVIEW
The ADM1168 sequencing engine (SE) provides the user with
powerful and flexible control of sequencing. The SE implements
a state machine control of the PDO outputs with state changes
conditional on input events. SE programs can enable complex
control of boards such as power-up and power-down sequence
control, fault event handling, and interrupt generation on
warnings. A watchdog function that verifies the continued
operation of a processor clock can be integrated into the SE
program. The SE can also be controlled via the SMBus, giving
software or firmware control of the board sequencing.
The SE state machine comprises 63 state cells. Each state has the
following attributes:
Monitors signals indicating the status of the eight input
pins, VP1 to VP3, VH, and VX1 to VX4.
Can be entered from any other state.
Three exit routes move the state machine onto a next state:
sequence detection, fault monitoring, and timeout.
Delay timers for the sequence and timeout blocks can be
programmed independently, and changed with each state
change. The range of timeouts is from 0 ms to 400 ms.
Output condition of the eight PDO pins is defined and
fixed within a state.
Transition from one state to the next is made in less than
20 µs, which is the time needed to download a state
definition from EEPROM to the SE.
Can trigger a write of the black box fault and status
registers into the black box section of EEPROM.
04734-029
SEQUENCE
TIMEOUT
MONITOR
FAULT STATE
Figure 19. State Cell
The ADM1168 offers up to 63 state definitions. The signals
monitored to indicate the status of the input pins are the
outputs of the SFDs.
WARNINGS
The SE also monitors warnings. These warnings can be
generated when the ADC readings violate their limit register
value or when the secondary voltage monitors on VPx and VH
are triggered. The warnings are ORed together and are available
as a single warning input to each of the three blocks that enable
exiting a state.
SMBus JUMP (UNCONDITIONAL JUMP)
The SE can be forced to advance to the next state unconditionally.
This enables the user to force the SE to advance. Examples of
the use of this feature include moving to a margining state or
debugging a sequence. The SMBus jump or go-to command can
be seen as another input to sequence and timeout blocks to
provide an exit from each state.
Table 7. Sample Sequence State Entries
State Sequence Timeout Monitor
IDLE1 If VX1 is low, go to State IDLE2.
IDLE2 If VP1 is okay, go to State EN3V3.
EN3V3 If VP2 is okay, go to State EN2V5. If VP2 is not okay after 10 ms,
go to State DIS3V3.
If VP1 is not okay, go to State IDLE1.
DIS3V3 If VX1 is high, go to State IDLE1.
EN2V5 If VP3 is okay, go to State PWRGD. If VP3 is not okay after 20 ms,
go to State DIS2V5.
If VP1 or VP2 is not okay, go to State FSEL2.
DIS2V5 If VX1 is high, go to State IDLE1.
FSEL1 If VP3 is not okay, go to State DIS2V5. If VP1 or VP2 is not okay, go to State FSEL2.
FSEL2 If VP2 is not okay, go to State DIS3V3. If VP1 is not okay, go to State IDLE1.
PWRGD If VX1 is high, go to State DIS2V5. If VP1, VP2, or VP3 is not okay, go to State FSEL1.
Preliminary Technical Data ADM1168
Rev. Pr. A | Page 17 of 28
SEQUENCING ENGINE APPLICATION EXAMPLE
The application in this section demonstrates the operation of
the SE. Figure 21 shows how the simple building block of a single
SE state can be used to build a power-up sequence for a three-
supply system. Table 8 lists the PDO outputs for each state in
the same SE implementation. In this system, a good 5 V supply
on the VP1 pin and the VX1 pin held low are the triggers required
to start a power-up sequence. The sequence next turns on the 3.3 V
supply, then the 2.5 V supply (assuming successful turn-on of the
3.3 V supply). When all three supplies have turned on correctly,
the PWRGD state is entered, where the SE remains until a fault
occurs on one of the three supplies or until it is instructed to go
through a power-down sequence by VX1 going high.
Faults are dealt with throughout the power-up sequence on
a case-by-case basis. The following three sections (the Sequence
Detector section, the Monitoring Fault Detector section, and
the Timeout Detector section) describe the individual blocks
and use the sample application shown in Figure 21 to demonstrate
the actions of the state machine.
Sequence Detector
The sequence detector block is used to detect when a step in
a sequence has been completed. It looks for one of the SE inputs
to change state, and is most often used as the gate for successful
progress through a power-up or power-down sequence. A timer
block that is included in this detector can insert delays into a
power-up or power-down sequence, if required. Timer delays
can be set from 10 µs to 400 ms. Figure 20 is a block diagram of
the sequence detector.
04734-032
SUPPLY FAULT
DETECTION
LOGIC INPUT CHANGE
OR FAULT DETECTION
WARNINGS
FORCE FLOW
(UNCONDITIONAL JUMP)
VP1
VX4
INVERT
SEQUENCE
DETECTOR
SELECT
TIMER
Figure 20. Sequence Detector Block Diagram
If a timer delay is specified, the input to the sequence detector
must remain in the defined state for the duration of the timer
delay. If the input changes state during the delay, the timer is reset.
The sequence detector can also help to identify monitoring faults.
In the sample application shown in Figure 21, the FSEL1 and
FSEL2 states first identify which of the VP1, VP2, or VP3 pins
has faulted, and then they take appropriate action.
04734-030
IDLE1
IDLE2
EN3V3
DIS3V3
DIS2V5PWRGD
FSEL1
FSEL2
SEQUENCE
STATES
MONITOR FAULT
STATES
TIMEOUT
STATES
VX1 = 0
VP1 = 1
VP1 = 0
(VP1 + VP2) = 0
(VP1 + VP2 + VP3) = 0
(VP1 +
VP2) = 0
VP2 = 1
VP3 = 1
VP2 = 0
VX1 = 1
VP3 = 0
VP2 = 0
VP1 = 0
VX1 = 1
VX1 = 1
10ms
20ms
EN2V5
Figure 21. Sample Application Flow Diagram
Table 8. PDO Outputs for Each State
PDO Outputs IDLE1 IDLE2 EN3V3 EN2V5 DIS3V3 DIS2V5 PWRGD FSEL1 FSEL2
PDO1 = 3V3ON 0 0 1 1 0 1 1 1 1
PDO2 = 2V5ON 0 0 0 1 1 0 1 1 1
PDO3 = FAULT 0 0 0 0 1 1 0 1 1
ADM1168 Preliminary Technical Data
Rev. Pr. A | Page 18 of 28
Monitoring Fault Detector
The monitoring fault detector block is used to detect a failure
on an input. The logical function implementing this is a wide
OR gate that can detect when an input deviates from its expected
condition. The clearest demonstration of the use of this block
is in the PWRGD state, where the monitor block indicates that
a failure on one or more of the VPx, VXx, or VH inputs has
occurred.
No programmable delay is available in this block because the
triggering of a fault condition is likely to be caused by a supply
falling out of tolerance. In this situation, the device needs to
react as quickly as possible. Some latency occurs when moving
out of this state, however, because it takes a finite amount of time
(~20 µs) for the state configuration to download from the
EEPROM into the SE. Figure 22 is a block diagram of the
monitoring fault detector.
04734-033
SUPPLY FAULT
DETECTION
LOGIC INPUT CHANGE
OR FAULT DETECTION
VP1
VX4
MONITORING FAULT
DETECTOR
MASK
SENSE
1-BIT FAULT
DETECTOR
FAULT
WARNINGS
MASK
1-BIT FAULT
DETECTOR
FAULT
MASK
SENSE
1-BIT FAULT
DETECTOR
FAULT
Figure 22. Monitoring Fault Detector Block Diagram
Timeout Detector
The timeout detector allows the user to trap a failure to ensure
proper progress through a power-up or power-down sequence.
In the sample application shown in Figure 21, the timeout next-
state transition is from the EN3V3 and EN2V5 states. For the
EN3V3 state, the signal 3V3ON is asserted on the PDO1 output
pin upon entry to this state to turn on a 3.3 V supply.
This supply rail is connected to the VP2 pin, and the sequence
detector looks for the VP2 pin to go above its undervoltage
threshold, which is set in the supply fault detector (SFD) attached
to that pin.
The power-up sequence progresses when this change is
detected. If, however, the supply fails (perhaps due to a short
circuit overloading this supply), the timeout block traps the
problem. In this example, if the 3.3 V supply fails within 10 ms,
the SE moves to the DIS3V3 state and turns off this supply by
bringing PDO1 low. It also indicates that a fault has occurred by
taking PDO3 high. Timeout delays of 100 µs to 400 ms can be
programmed.
FAULT AND STATUS REPORTING
The ADM1168 has a fault latch for recording faults. Two registers,
FSTAT1 and FSTAT2, are set aside for this purpose. A single bit
is assigned to each input of the device, and a fault on that input
sets the relevant bit. The contents of the fault register can be
read out over the SMBus to determine which input(s) faulted.
The fault register can be enabled or disabled in each state. To
latch data from one state, ensure that the fault latch is disabled
in the following state. This ensures that only real faults are
captured and not, for example, undervoltage conditions that
may be present during a power-up or power-down sequence.
The ADM1168 also has a number of status registers. These include
more detailed information, such as whether an undervoltage or
overvoltage fault is present on a particular input. The status
registers also include information on ADC limit faults.
There are two sets of these registers with different behaviors.
The first set of status registers is not latched in any way and,
therefore, can change at any time in response to changes on the
inputs. These registers provide information as the UV and OV
state of the inputs, the digital state of the GPI VXx inputs, and
also the ADC warning limit status.
The second set of registers update each time the sequence engine
changes state and are latched until the next state change. The
second set of registers provides the same information as the first
set, but in a more compact form. The reason for this is because
these registers are used by the black box feature when writing
status information for the previous state into EEPROM.
See the AN-721 Application Note at www.analog.com for full
details about the ADM1168 registers.
NONVOLATILE BLACK BOX FAULT RECORDING
A section of EEPROM, from Address 0xF900 to Address 0xF9FF, is
provided that by default can be used to store user-defined settings
and information. Part of this section of EEPROM, Address 0xF980
to Address 0xF9FF, can instead be used to store up to 16 fault records.
Any sequencing engine state can be designated as a black box write
state. Each time the sequence engine enters that state, a fault record
is written into EEPROM. The fault record provides a snapshot of
the entire ADM1166 state at the point in time when the last state
was exited, just prior to entering the designated black box write
state. A fault record contains the following information:
Preliminary Technical Data ADM1168
Rev. Pr. A | Page 19 of 28
A flag bit set to 0 after the fault record has been written.
The state number of the previous state prior to the fault
record write state.
Did a sequence/timeout/monitor condition cause the
previous state to exit?
UVSTATx and OVSTATx input comparator status.
VXx GPISTAT status.
LIMSTATx status.
A checksum byte.
Each fault record contains eight bytes, with each byte taking
typically about 250 µs to write to EEPROM, for a total write
time of about 2 ms. Once the black box begins to write a fault
record into EEPROM, the ADM1166 ensures that is complete
before attempting to write any additional fault records. This
means that if consecutive sequencing engine states are designated
as black box write states, then a time delay must be used in the
first state to ensure that the fault record is written before moving to
the next state.
When the ADM1166 powers on initially, it performs a search to
find the first fault record that has not been written to. It does
this by checking the flag bit in each fault record until it finds
one where the flag bit is 1. The first fault record is stored at
Address 0xF980, and at multiples of eight bytes after that, with
the last record stored at Address 0xF9F8.
The fault recorder is only able to write in the EEPROM. It is not
able to erase the EEPROM prior to writing the fault record.
Therefore, to ensure correct operation, it is important that the fault
record EEPROM is erased prior to use. Once all the EEPROM
locations for the fault records are used, no more fault records are
written. This ensures that the first fault in any cascading fault is
stored and not overwritten and lost.
To avoid the fault recorder filling up and fault records being lost, an
application can periodically poll the ADM1166 to determine if there
are fault records to be read. Alternatively, one of the PDOx outputs
can be used to generate an interrupt for a processor in the fault
record write state to signal the need to come and read one or more
fault records.
After reading fault records during normal operation, two things
must be done before the fault recorder will be able to reuse the
EEPROM locations. First, the EEPROM section must be erased.
The fault recorder must then be reset so that it performs its search
again for the first unused location of EEPROM that is available to
store a fault record.
BLACK BOX WRITES WITH NO EXTERNAL SUPPLY
In cases where all the input supplies fail, for example, if the card
has been removed from a powered backplane, the state machine
can be programmed to trigger a write into the black box EEPROM.
The decoupling capacitors on the rail that power the ADM1166
and other loads on the board form an energy reservoir. Depending
on the other loads on the board and their behavior as the supply
rails drop, there may be sufficient energy in the decoupling
capacitors to allow the ADM1166 to write a complete fault record
(8 bytes of data).
Typically, it takes 2 ms to write to the eight bytes of a fault record. If
the ADM1166 is powered using a 12 V supply on the VH pin, then
a UV threshold at 6 V could be set and used as the state machine
trigger to start writing a fault record to EEPROM. The higher the
threshold, the earlier the black box write begins, and the more
energy available in the decoupling capacitors to ensure it completes
successfully.
Provided the VH supply, or another supply connected to a VPx pin,
remains above 3.0 V during the time to write, the entire fault record
would always be written to EEPROM. In many cases, there should
be sufficient decoupling capacitors on a board to power the
ADM1166 as it writes into EEPROM.
In cases where the decoupling capacitors are not able to supply
sufficient energy after the board is removed to ensure a complete
fault record is written, the value of the capacitor on VDDCAP
may be increased. In the worst case, assuming that no energy is
supplied to the ADM1166 by the external decoupling capacitors,
but that VDDCAP has 4.75 V on it, then a 47 µF is sufficient to
guarantee a single complete black box record can be written to
EEPROM.
ADM1168 Preliminary Technical Data
Rev. Pr. A | Page 20 of 28
APPLICATIONS DIAGRAM
04734-068
3.3V OUT
VH
PDO8
PDO7 SIGNAL VALID
PDO6
PDO2
PDO1
PDO5
PDO4
PDO3
EN OUT
DC-TO-DC1
IN
3.3V OUT
3V OUT
5V OUT
12V OUT
EN OUT
DC-TO-DC2
IN
1.25V OUT
EN OUT
DC-TO-DC3
IN
EN OUT
LDO
IN
1.25V OUT
0.9V OUT
I
5V IN
3V IN
5V OUT VP1
3V OUT VP2
3.3V OUT VP3
1.25V OUT VX1
1.2V OUT VX2
0.9V OUT VX3
VX4
10µF
VCCP
10µF
REFOUT
10µF
VDDCAP GND
ADM1168
PWRGD
RESET
Figure 23. Applications Diagram
Preliminary Technical Data ADM1168
Rev. Pr. A | Page 21 of 28
COMMUNICATING WITH THE ADM1168
CONFIGURATION DOWNLOAD AT POWER-UP
The configuration of the ADM1168 (undervoltage/overvoltage
thresholds, glitch filter timeouts, and PDO configurations) is
dictated by the contents of the RAM. The RAM comprises
digital latches that are local to each of the functions on the
device. The latches are double-buffered and have two identical
latches, Latch A and Latch B. Therefore, when an update to a
function occurs, the contents of Latch A are updated first, and
then the contents of Latch B are updated with identical data.
The advantages of this architecture are explained in detail in the
Updating the Configuration section.
The two latches are volatile memory and lose their contents at
power-down. Therefore, the configuration in the RAM must be
restored at power-up by downloading the contents of the
EEPROM (nonvolatile memory) to the local latches. This
download occurs in steps, as follows:
1. With no power applied to the device, the PDOs are all high
impedance.
2. When 1.2 V appears on any of the inputs connected to the
VDD arbitrator (VH or VPx), the PDOs are all weakly
pulled to GND with a 20 kΩ resistor.
3. When the supply rises above the undervoltage lockout of
the device (UVLO is 2.5 V), the EEPROM starts to
download to the RAM.
4. The EEPROM downloads its contents to all Latch As.
5. When the contents of the EEPROM are completely
downloaded to the Latch As, the device controller signals
all Latch As to download to all Latch Bs simultaneously,
completing the configuration download.
6. At 0.5 ms after the configuration download completes, the
first state definition is downloaded from EEPROM into
the SE.
Note that any attempt to communicate with the device prior to
the completion of the download causes the ADM1168 to issue
a no acknowledge (NACK).
UPDATING THE CONFIGURATION
After power-up, with all the configuration settings loaded from
the EEPROM into the RAM registers, the user may need to alter
the configuration of functions on the ADM1168, such as changing
the undervoltage or overvoltage limit of an SFD, changing the
fault output of an SFD, or adjusting the rise time delay of one of
the PDOs.
The ADM1168 provides several options that allow the user to
update the configuration over the SMBus interface. The following
three options are controlled in the UPDCFG register.
Option 1
Update the configuration in real time. The user writes to the
RAM across the SMBus, and the configuration is updated
immediately.
Option 2
Update the Latch As without updating the Latch Bs. With this
method, the configuration of the ADM1168 remains unchanged
and continues to operate in the original setup until the instruction
is given to update the Latch Bs.
Option 3
Change the EEPROM register contents without changing the
RAM contents, and then download the revised EEPROM contents
to the RAM registers. With this method, the configuration of the
ADM1168 remains unchanged and continues to operate in the
original setup until the instruction is given to update the RAM.
The instruction to download from the EEPROM in Option 3 is
also a useful way to restore the original EEPROM contents
if revisions to the configuration are unsatisfactory. For example,
if the user needs to alter an overvoltage threshold, the RAM
register can be updated, as described in the Option 1 section.
However, if the user is not satisfied with the change and wants
to revert to the original programmed value, the device
controller can issue
a command to download the EEPROM contents to the RAM
again, as described in the Option 3 section, restoring the
ADM1168 to its original configuration.
The topology of the ADM1168 makes this type of operation
possible. The local, volatile registers (RAM) are all double-
buffered latches. Setting Bit 0 of the UPDCFG register to 1
leaves the double-buffered latches open at all times. If Bit 0 is
set to 0 when a RAM write occurs across the SMBus, only the
first side of the double-buffered latch is written to. The user
must then write a 1 to Bit 1 of the UPDCFG register. This
generates
a pulse to update all the second latches at once. EEPROM writes
occur in a similar way.
The final bit in this register can enable or disable EEPROM
page erasure. If this bit is set high, the contents of an EEPROM
page can all be set to 1. If this bit is set low, the contents of
a page cannot be erased, even if the command code for page
erasure is programmed across the SMBus. The bit map for the
UPDCFG register is shown in the AN-721 Application Note at
www.analog.com. A flow diagram for download at power-up
and subsequent configuration updates is shown in Figure 24.
ADM1168 Preliminary Technical Data
Rev. Pr. A | Page 22 of 28
04734-035
POWER-UP
(VCC > 2.5V)
EEPROM
E
E
P
R
O
M
L
D
D
A
T
A
R
A
M
L
D
U
P
D
SMBus
DEVICE
CONTROLLER
LATCH A LATCH B FUNCTION
(OV THRESHOLD
ON VP1)
Figure 24. Configuration Update Flow Diagram
UPDATING THE SEQUENCING ENGINE
Sequencing engine (SE) functions are not updated in the same
way as regular configuration latches. The SE has its own dedicated
512-byte EEPROM for storing state definitions, providing
63 individual states, each with a 64-bit word (one state is reserved).
At power-up, the first state is loaded from the SE EEPROM into
the engine itself. When the conditions of this state are met, the
next state is loaded from the EEPROM into the engine, and so on.
The loading of each new state takes approximately 10 µs.
To alter a state, the required changes must be made directly to
the EEPROM. RAM for each state does not exist. The relevant
alterations must be made to the 64-bit word, which is then
uploaded directly to the EEPROM.
INTERNAL REGISTERS
The ADM1168 contains a large number of data registers. The
principal registers are the address pointer register and the
configuration registers.
Address Pointer Register
The address pointer register contains the address that selects
one of the other internal registers. When writing to the
ADM1168, the first byte of data is always a register address that
is written to the address pointer register.
Configuration Registers
The configuration registers provide control and configuration
for various operating parameters of the ADM1168.
EEPROM
The ADM1168 has two 512-byte cells of nonvolatile, electrically
erasable, programmable, read-only memory (EEPROM), from
Address 0xF800 to Register Address 0xFBFF. The EEPROM is
used for permanent storage of data that is not lost when the
ADM1168 is powered down. One EEPROM cell , 0xF800 to
0xF9FF, contains the configuration data , user information and,
if enabled, any fault records of the device; the other section,
0xFA00 to 0xFBFF, contains the state definitions for the SE.
Although referred to as read-only memory, the EEPROM can be
written to, as well as read from, using the serial bus in exactly
the same way as the other registers.
The major differences between the EEPROM and other
registers are as follows:
An EEPROM location must be blank before it can be
written to. If it contains data, the data must first be erased.
Writing to the EEPROM is slower than writing to the RAM.
Writing to the EEPROM should be restricted because it has
a limited write/cycle life of typically 10,000 write operations
due to the usual EEPROM wear-out mechanisms.
The first EEPROM is split into 16 (0 to 15) pages of 32 bytes each.
Page 0 to Page 3, from Address 0xF800 to Address 0xF89F, hold
the configuration data for the applications on the ADM1166
(such as the SFDs and PDOs). These EEPROM addresses are
the same as the RAM register addresses, prefixed by F8. Page 5
to Page 7, from Address 0xF8A0 to Address 0xF8FF, are reserved.
Page 8 to Page 11 are available for customer use to store any
information that may be required by the customer in their
application. Customers can store information on Page 12 to
Page 15, or these pages can store the fault records written by the
sequencing engine if users have decided to enable writing of the
fault records for different states.
Data can be downloaded from the EEPROM to the RAM in one
of the following ways:
At power-up, when Page 0 to Page 4 are downloaded.
By setting Bit 0 of the UDOWNLD register (0xD8), which
performs a user download of Page 0 to Page 4.
When the sequence engine is enabled, it is not possible to access
the section of EEPROM from Address 0xFA00 to Address 0xFBFF.
The sequence engine must be halted before it is possible to read
or write to this range. Attempting to read or write to this range if
the sequence engine is not halted will generate a no acknowledged,
or NACK.
Preliminary Technical Data ADM1168
Rev. Pr. A | Page 23 of 28
Read/write access to the configuration and user EEPROM ranges
from Address 0xF800 to Address 0xF89F and Address 0xF900 to
Address 0xF9FF depends on whether the black box fault
recorder is enabled. If the fault recorder is enabled and one or
more states have been set as fault record trigger states, then it is
not possible to access any EEPROM location in this range
without first halting the black box. Attempts to read or write
this EEPROM range while the fault recorder is operating are
acknowledged by the device but do not return any useful data
or modify the EEPROM in any way.
If none of the states are set as fault record trigger states, then the
black box is considered disabled, and read/write access is allowed
without having to halt the black box fault recorder.
SERIAL BUS INTERFACE
The ADM1168 is controlled via the serial system management
bus (SMBus) and is connected to this bus as a slave device under
the control of a master device. It takes approximately 1 ms after
power-up for the ADM1168 to download from its EEPROM.
Therefore, access to the ADM1168 is restricted until the download
is complete.
Identifying the ADM1168 on the SMBus
The ADM1168 has a 7-bit serial bus slave address (see Table 9).
The device is powered up with a default serial bus address. The
five MSBs of the address are set to 10001; the two LSBs are
determined by the logical states of Pin A1 and Pin A0. This
allows the connection of four ADM1168s to one SMBus.
Table 9. Serial Bus Slave Address
A1 Pin A0 Pin Hex Address 7-Bit Address
Low Low 0x88 1000100x
1
Low High 0x8A 1000101x
1
High Low 0x8C 1000110x
1
High High 0x8E 1000111x
1
1 x = Read/Write bit. The address is shown only as the first 7 MSBs.
The device also has several identification registers (read-only)
that can be read across the SMBus. Table 10 lists these registers
with their values and functions.
Table 10. Identification Register Values and Functions
Name Address Value Function
MANID 0xF4 0x41 Manufacturer ID for Analog Devices
REVID 0xF5 0x02 Silicon revision
MARK1 0xF6 0x00 Software brand
MARK2 0xF7 0x00 Software brand
General SMBus Timing
Figure 25, Figure 26, and Figure 27 are timing diagrams for
general read and write operations using the SMBus. The SMBus
specification defines specific conditions for different types of
read and write operations, which are discussed in the Write
Operations and Read Operations sections.
The general SMBus protocol operates in the following three steps.
Step 1
The master initiates data transfer by establishing a start condition,
defined as a high-to-low transition on the serial data line SDA,
while the serial clock line SCL remains high. This indicates that
a data stream follows. All slave peripherals connected to the serial
bus respond to the start condition and shift in the next eight bits,
consisting of a 7-bit slave address (MSB first) plus an R/W bit.
This bit determines the direction of the data transfer, that is,
whether data is written to or read from the slave device (0 = write,
1 = read).
The peripheral whose address corresponds to the transmitted
address responds by pulling the data line low during the low
period before the ninth clock pulse, known as the acknowledge
bit, and by holding it low during the high period of this clock pulse.
All other devices on the bus remain idle while the selected device
waits for data to be read from or written to it. If the R/W bit is a 0,
the master writes to the slave device. If the R/W bit is a 1, the
master reads from the slave device.
Step 2
Data is sent over the serial bus in sequences of nine clock pulses,
eight bits of data followed by an acknowledge bit from the slave
device. Data transitions on the data line must occur during the
low period of the clock signal and remain stable during the high
period because a low-to-high transition when the clock is high
could be interpreted as a stop signal. If the operation is a write
operation, the first data byte after the slave address is a command
byte. This command byte tells the slave device what to expect next.
It may be an instruction telling the slave device to expect a block
write, or it may be a register address that tells the slave where
subsequent data is to be written. Because data can flow in only
one direction, as defined by the R/W bit, sending a command to
a slave device during a read operation is not possible. Before a read
operation, it may be necessary to perform a write operation to
tell the slave what sort of read operation to expect and the address
from which data is to be read.
ADM1168 Preliminary Technical Data
Rev. Pr. A | Page 24 of 28
Step 3
When all data bytes have been read or written, stop conditions
are established. In write mode, the master pulls the data line high
during the 10th clock pulse to assert a stop condition. In read
mode, the master device releases the SDA line during the low
period before the ninth clock pulse, but the slave device does not
pull it low. This is known as a no acknowledge. The master then
takes the data line low during the low period before the 10th clock
pulse and then high during the 10th clock pulse to assert a stop
condition.
04734-036
1 9 91
1 9 91
START BY
MASTER
ACK. BY
SLAVE
ACK. BY
SLAVE
ACK. BY
SLAVE
ACK. BY
SLAVE
FRAME 2
COMMAND CODE
FRAME 1
SLAVE ADDRESS
FRAME N
DATA BYTE
FRAME 3
DATA BYTE
SCL
SDA R/W
STOP
BY
MASTER
SCL
(CONTINUED)
SDA
(CONTINUED)
D7A0A11001 0 D6 D5 D4 D3 D2 D1 D0
D7 D6 D5 D4 D3 D2 D1 D0 D7 D6 D5 D4 D3 D2 D1 D0
Figure 25. General SMBus Write Timing Diagram
04734-037
1 9 91
1 9 91
START BY
MASTER
ACK. BY
SLAVE
ACK. BY
MASTER
ACK. BY
MASTER NO ACK.
FRAME 2
DATA BYTE
FRAME 1
SLAVE ADDRESS
FRAME N
DATA BYTE
FRAME 3
DATA BYTE
SCL
SDA R/W
STOP
BY
MASTER
SCL
(CONTINUED)
SDA
(CONTINUED)
D7A0A11001 0 D6 D5 D4 D3 D2 D1 D0
D7 D6 D5 D4 D3 D2 D1 D0 D7 D6 D5 D4 D3 D2 D1 D0
Figure 26. General SMBus Read Timing Diagram
04734-038
SCL
SDA
P S S P
tSU; STO
tHD; ST A
tS U; S T A
tS U; D AT
tHD;D AT
tHD;S TA tH I G H
tBUF
tL O W
tRtF
Figure 27. Serial Bus Timing Diagram
SMBus PROTOCOLS FOR RAM AND EEPROM
The ADM1168 contains volatile registers (RAM) and nonvolatile
registers (EEPROM). User RAM occupies Address 0x00 to
Address 0xDF; and the EEPROM occupies Address 0xF800 to
Address 0xFBFF.
Data can be written to and read from both the RAM and the
EEPROM as single data bytes. Data can be written only to
unprogrammed EEPROM locations. To write new data to a
programmed location, the location contents must first be erased.
EEPROM erasure cannot be done at the byte level. The EEPROM
is arranged as 32 pages of 32 bytes each, and an entire page
must be erased.
Preliminary Technical Data ADM1168
Rev. Pr. A | Page 25 of 28
Page erasure is enabled by setting Bit 2 in the UPDCFG register
(Address 0x90) to 1. If this bit is not set, page erasure cannot
occur, even if the command byte (0xFE) is programmed across
the SMBus.
WRITE OPERATIONS
The SMBus specification defines several protocols for different
types of read and write operations. The following abbreviations
are used in Figure 28 to Figure 36:
S = Start
P = Stop
R = Read
W = Write
A = Acknowledge
A = No acknowledge
The ADM1168 uses the following SMBus write protocols.
Send Byte
In a send byte operation, the master device sends a single
command byte to a slave device, as follows:
1. The master device asserts a start condition on SDA.
2. The master sends the 7-bit slave address followed by the
write bit (low).
3. The addressed slave device asserts an acknowledge (ACK)
on SDA.
4. The master sends a command code.
5. The slave asserts ACK on SDA.
6. The master asserts a stop condition on SDA and the
transaction ends.
In the ADM1168, the send byte protocol is used for two
purposes:
To write a register address to the RAM for a subsequent
single byte read from the same address, or for a block read or
a block write starting at that address, as shown in Figure 28.
04734-039
2 41 3 5 6
SLAVE
ADDRESS
RAM
ADDRESS
(0x00 TO 0xDF)
S W A A P
Figure 28. Setting a RAM Address for Subsequent Read
To erase a page of EEPROM memory. EEPROM memory
can be written to only if it is unprogrammed. Before writing
to one or more EEPROM memory locations that are already
programmed, the page(s) containing those locations must
first be erased. EEPROM memory is erased by writing a
command byte.
The master sends a command code telling the slave device
to erase the page. The ADM1168 command code for a page
erasure is 0xFE (1111 1110). Note that for a page erasure to
take place, the page address must be given in the previous
write word transaction (see the Write Byte/Word section). In
addition, Bit 2 in the UPDCFG register (Address 0x90)
must be set to 1.
04734-040
2 41 3 5 6
SLAVE
ADDRESS
COMMAND
BYTE
(0xFE)
S W A A P
Figure 29. EEPROM Page Erasure
As soon as the ADM1168 receives the command byte,
page erasure begins. The master device can send a stop
command as soon as it sends the command byte. Page
erasure takes approximately 20 ms. If the ADM1168 is
accessed before erasure is complete, it responds with a no
acknowledge (NACK).
Write Byte/Word
In a write byte/word operation, the master device sends a
command byte and one or two data bytes to the slave device, as
follows:
1. The master device asserts a start condition on SDA.
2. The master sends the 7-bit slave address followed by the
write bit (low).
3. The addressed slave device asserts ACK on SDA.
4. The master sends a command code.
5. The slave asserts ACK on SDA.
6. The master sends a data byte.
7. The slave asserts ACK on SDA.
8. The master sends a data byte or asserts a stop condition.
9. The slave asserts ACK on SDA.
10. The master asserts a stop condition on SDA to end the
transaction.
In the ADM1168, the write byte/word protocol is used for three
purposes:
To write a single byte of data to the RAM. In this case, the
command byte is RAM Address 0x00 to RAM Address
0xDF, and the only data byte is the actual data, as shown in
Figure 30.
04734-041
SLAVE
ADDRESS
RAM
ADDRESS
(0x00 TO 0xDF)
S W A DATAA PA
2 41 3 5 876
Figure 30. Single Byte Write to the RAM
To set up a 2-byte EEPROM address for a subsequent read,
write, block read, block write, or page erase. In this case, the
command byte is the high byte of EEPROM Address 0xF8
to EEPROM Address 0xFB. The only data byte is the low
byte of the EEPROM address, as shown in Figure 31.
04734-042
SLAVE
ADDRESS
EEPROM
ADDRESS
HIGH BYTE
(0xF8 TO 0xFB)
S W A
EEPROM
ADDRESS
LOW BYTE
(0x00 TO 0xFF)
A PA
2 41 3 5 876
Figure 31. Setting an EEPROM Address
ADM1168 Preliminary Technical Data
Rev. Pr. A | Page 26 of 28
Because a page consists of 32 bytes, only the three MSBs of
the address low byte are important for page erasure. The
lower five bits of the EEPROM address low byte specify the
addresses within a page and are ignored during an erase
operation.
To write a single byte of data to the EEPROM. In this case, the
command byte is the high byte of EEPROM Address 0xF8
to EEPROM Address 0xFB. The first data byte is the low
byte of the EEPROM address, and the second data byte is
the actual data, as shown in Figure 32.
04734-043
SLAVE
ADDRESS
EEPROM
ADDRESS
HIGH BYTE
(0xF8 TO 0xFB)
S W A
EEPROM
ADDRESS
LOW BYTE
(0x00 TO 0xFF)
A PA
2 41 3 5 107
A
9
DATA
86
Figure 32. Single Byte Write to the EEPROM
Block Write
In a block write operation, the master device writes a block of
data to a slave device. The start address for a block write must
have been set previously. In the ADM1168, a send byte opera-
tion sets a RAM address, and a write byte/word operation sets
an EEPROM address, as follows:
1. The master device asserts a start condition on SDA.
2. The master sends the 7-bit slave address followed by
the write bit (low).
3. The addressed slave device asserts ACK on SDA.
4. The master sends a command code that tells the slave
device to expect a block write. The ADM1168 command
code for a block write is 0xFC (1111 1100).
5. The slave asserts ACK on SDA.
6. The master sends a data byte that tells the slave device how
many data bytes are being sent. The SMBus specification
allows a maximum of 32 data bytes in a block write.
7. The slave asserts ACK on SDA.
8. The master sends N data bytes.
9. The slave asserts ACK on SDA after each data byte.
10. The master asserts a stop condition on SDA to end the
transaction.
04734-044
SLAVE
ADDRESS
S W A
2
COMMAND 0xFC
(BLOCK WRITE)
41 3
A
5
BYTE
COUNT
6
A
7
A
9 10
A PA
DATA
1
8
DATA
N
DATA
2
Figure 33. Block Write to the EEPROM or RAM
Unlike some EEPROM devices that limit block writes to within
a page boundary, there is no limitation on the start address
when performing a block write to EEPROM, except when
There must be at least N locations from the start address to
the highest EEPROM address (0xFBFF) to avoid writing to
invalid addresses.
An address crosses a page boundary. In this case, both
pages must be erased before programming.
Note that the ADM1168 features a clock extend function for
writes to the EEPROM. Programming an EEPROM byte takes
approximately 250 µs, which limits the SMBus clock for repeated
or block write operations. The ADM1168 pulls SCL low and
extends the clock pulse when it cannot accept any
more data.
READ OPERATIONS
The ADM1168 uses the following SMBus read protocols.
Receive Byte
In a receive byte operation, the master device receives a single
byte from a slave device, as follows:
1. The master device asserts a start condition on SDA.
2. The master sends the 7-bit slave address followed by the
read bit (high).
3. The addressed slave device asserts ACK on SDA.
4. The master receives a data byte.
5. The master asserts NACK on SDA.
6. The master asserts a stop condition on SDA, and the
transaction ends.
In the ADM1168, the receive byte protocol is used to read a
single byte of data from a RAM or EEPROM location whose
address has previously been set by a send byte or write
byte/word operation, as shown in Figure 34.
04734-045
2 31 4 65
SLAVE
ADDRESS
S R DATA PA A
Figure 34. Single Byte Read from the EEPROM or RAM
Block Read
In a block read operation, the master device reads a block of
data from a slave device. The start address for a block read must
have been set previously. In the ADM1168, this is done by a
send byte operation to set a RAM address, or a write byte/word
operation to set an EEPROM address. The block read operation
itself consists of a send byte operation that sends a block read
command to the slave, immediately followed by a repeated start
and a read operation that reads out multiple data bytes, as follows:
1. The master device asserts a start condition on SDA.
2. The master sends the 7-bit slave address followed by the
write bit (low).
3. The addressed slave device asserts ACK on SDA.
4. The master sends a command code that tells the slave
device to expect a block read. The ADM1168 command
code for a block read is 0xFD (1111 1101).
5. The slave asserts ACK on SDA.
6. The master asserts a repeat start condition on SDA.
7. The master sends the 7-bit slave address followed by the
read bit (high).
8. The slave asserts ACK on SDA.
Preliminary Technical Data ADM1168
Rev. Pr. A | Page 27 of 28
9. The ADM1168 sends a byte-count data byte that tells the
master how many data bytes to expect. The ADM1168
always returns 32 data bytes (0x20), which is the
maximum allowed by the SMBus 1.1 specification.
10. The master asserts ACK on SDA.
11. The master receives 32 data bytes.
12. The master asserts ACK on SDA after each data byte.
13. The master asserts a stop condition on SDA to end the
transaction.
04734-046
SLAVE
ADDRESS
S W A
2
COMMAND 0xFD
(BLOCK READ)
4
1
3
A
5
S
6
SLAVE
ADDRESS
7
BYTE
COUNT
9
10
12
1
1
AR A
8
DATA
1
DATA
32 A
13
P
A
Figure 35. Block Read from the EEPROM or RAM
Error Correction
The ADM1168 provides the option of issuing a packet error
correction (PEC) byte after a write to the RAM, a write to the
EEPROM, a block write to the RAM/EEPROM, or a block read
from the RAM/ EEPROM. This option enables the user to
verify that the data received by or sent from the ADM1168 is
correct. The PEC byte is an optional byte sent after that last data
byte has been written to or read from the ADM1168. The protocol
is the same as a block read for Step 1 to Step 12 and then proceeds
as follows:
13. The ADM1168 issues a PEC byte to the master. The master
checks the PEC byte and issues another block read, if the
PEC byte is incorrect.
14. A no acknowledge (NACK) is generated after the PEC byte
to signal the end of the read.
15. The master asserts a stop condition on SDA to end
the transaction.
Note that the PEC byte is calculated using CRC-8. The frame
check sequence (FCS) conforms to CRC-8 by the polynomial
C(x) = x
8
+ x
2
+ x
1
+ 1
See the SMBus 1.1 specification for details.
An example of a block read with the optional PEC byte is shown
in Figure 36.
04734-047
SLAVE
ADDRESS
S W A
2
COMMAND 0xFD
(BLOCK READ)
41 3
A
5
S
6
SLAVE
ADDRESS
7
BYTE
COUNT
9 10 1211
AR A
8
DATA
1
DATA
32 A
13
PEC
14
A
15
P
A
Figure 36. Block Read from the EEPROM or RAM with PEC
ADM1168 Preliminary Technical Data
Rev. Pr. A | Page 28 of 28
OUTLINE DIMENSIONS
COMPLIANT TO JEDEC STANDARDS MS-026-BBA
VIEW A
TOP VIEW
(PINS DOWN)
8
1
32 25
24
17
16
9
0.80
BSC
LEAD PITCH
9.00
BSC SQ
7.00
BSC SQ
1.60
MAX
0.75
0.60
0.45
0.45
0.37
0.30
PIN 1
0.20
0.09
1.45
1.40
1.35
0.10 MAX
COPLANARITY
VIEW A
ROTATED 90°
CCW
SEATING
PLANE
3.5°
0.15
0.05
Figure 37. 32-Lead Low Profile Quad Flat Package [LQFP]
(ST-32-2)
Dimensions shown in millimeters
ORDERING GUIDE
Model Temperature Range Package Description Package Option
ADM1168ASTZ
1
−40°C to +85°C 32-Lead LQFP ST-32-2
ADM1168ASTZ-REEL7
1
−40°C to +85°C 32-Lead LQFP ST-32-2
EVAL-ADM1168LQEBZ
1
Evaluation Board
1 Z = RoHS Compliant Part.
©2010 Analog Devices, Inc. All rights reserved. Trademarks and
registered trademarks are the property of their respective owners.
PR09474-0-10/10(PrA)