IRF840B/IRFS840B 500V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supplies, power factor correction and electronic lamp ballasts based on half bridge. * * * * * * 8.0A, 500V, RDS(on) = 0.8 @VGS = 10 V Low gate charge ( typical 41 nC) Low Crss ( typical 35 pF) Fast switching 100% avalanche tested Improved dv/dt capability D G DS G TO-220 IRF Series GD S TO-220F IRFS Series S Absolute Maximum Ratings Symbol VDSS ID TC = 25C unless otherwise noted Parameter Drain-Source Voltage - Continuous (TC = 25C) Drain Current IRF840B IRFS840B Units V 8.0 8.0 A 5.1 5.1 A 32 32 A 500 - Continuous (TC = 100C) IDM Drain Current VGSS Gate-Source Voltage EAS Single Pulsed Avalanche Energy (Note 2) IAR Avalanche Current (Note 1) 8.0 A EAR Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TC = 25C) (Note 1) 13.4 5.5 -55 to +150 mJ V/ns W W/C C 300 C dv/dt PD TJ, TSTG TL - Pulsed (Note 1) (Note 3) - Derate above 25C Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds 30 V 320 mJ 134 1.08 44 0.35 * Drain current limited by maximum junction temperature. Thermal Characteristics Symbol RJC Parameter Thermal Resistance, Junction-to-Case Max. RCS Thermal Resistance, Case-to-Sink Typ. 0.5 -- C/W RJA Thermal Resistance, Junction-to-Ambient Max. 62.5 62.5 C/W (c)2005 Fairchild Semiconductor Corporation IRF840B 0.93 IRFS840B 2.86 Units C/W Rev. B, February 2005 IRF840B/IRFS840B February 2005 Symbol TC = 25C unless otherwise noted Parameter Test Conditions Min Typ Max Units 500 -- -- V -- 0.55 -- V/C VDS = 500 V, VGS = 0 V -- -- 10 A VDS = 400 V, TC = 125C -- -- 100 A Gate-Body Leakage Current, Forward VGS = 30 V, VDS = 0 V -- -- 100 nA Gate-Body Leakage Current, Reverse VGS = -30 V, VDS = 0 V -- -- -100 nA 2.0 -- 4.0 V -- 0.65 0.8 -- 7.3 -- S -- 1400 1800 pF -- 145 190 pF -- 35 45 pF -- 22 55 ns -- 65 140 ns -- 125 260 ns -- 75 160 ns -- 41 53 nC Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 A BVDSS / TJ Breakdown Voltage Temperature Coefficient ID = 250 A, Referenced to 25C IDSS IGSSF IGSSR Zero Gate Voltage Drain Current On Characteristics VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 A RDS(on) Static Drain-Source On-Resistance VGS = 10 V, ID = 4.0 A gFS Forward Transconductance VDS = 40 V, ID = 4.0 A (Note 4) Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance VDS = 25 V, VGS = 0 V, f = 1.0 MHz Switching Characteristics td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge VDD = 250 V, ID = 8.0 A, RG = 25 (Note 4, 5) VDS = 400 V, ID = 8.0 A, VGS = 10 V (Note 4, 5) -- 6.5 -- nC -- 17 -- nC Drain-Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain-Source Diode Forward Current -- -- 8.0 A ISM -- -- 32 A VSD Maximum Pulsed Drain-Source Diode Forward Current VGS = 0 V, IS = 8.0 A Drain-Source Diode Forward Voltage -- -- 1.4 V trr Reverse Recovery Time -- 390 -- ns Qrr Reverse Recovery Charge -- 4.2 -- C VGS = 0 V, IS = 8.0 A, dIF / dt = 100 A/s (Note 4) Notes: 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L = 9.0mH, IAS = 8.0A, VDD = 50V, RG = 25 , Starting TJ = 25C 3. ISD 8.0A, di/dt 200A/s, VDD BVDSS, Starting TJ = 25C 4. Pulse Test : Pulse width 300s, Duty cycle 2% 5. Essentially independent of operating temperature (c)2005 Fairchild Semiconductor Corporation Rev. B, February 2005 IRF840B/IRFS840B Electrical Characteristics IRF840B/IRFS840B Typical Characteristics VGS 15.0 V 10.0 V 8.0 V 7.0 V 6.5 V 6.0 V 5.5 V Bottom : 5.0 V Top : ID, Drain Current [A] 1 10 ID, Drain Current [A] 1 10 0 10 o 150 C 0 10 o 25 C o -55 C Notes : 1. 250s Pulse Test 2. TC = 25 Notes : 1. VDS = 40V 2. 250 s Pulse Test -1 -1 10 -1 0 10 10 1 10 2 10 4 6 8 10 VGS, Gate-Source Voltage [V] VDS, Drain-Source Voltage [V] Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics 2.5 IDR, Reverse Drain Current [A] RDS(ON) [ ], Drain-Source On-Resistance 3.0 VGS = 10V 2.0 VGS = 20V 1.5 1.0 1 10 0 10 25 150 Notes : 1. VGS = 0V 2. 250s Pulse Test Note : TJ = 25 -1 0 5 10 15 25 30 10 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 ID, Drain Current [A] VSD, Source-Drain voltage [V] Figure 3. On-Resistance Variation vs Drain Current and Gate Voltage Figure 4. Body Diode Forward Voltage Variation with Source Current and Temperature 3000 Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd 2500 Capacitance [pF] 20 12 VDS = 100V 10 2000 Ciss 1500 Coss 1000 Notes : 1. VGS = 0 V 2. f = 1 MHz Crss 500 VGS, Gate-Source Voltage [V] 0.5 VDS = 250V 8 VDS = 400V 6 4 2 Note : ID = 8.0 A 0 0 -1 10 0 10 1 10 0 5 10 15 20 25 30 35 40 45 VDS, Drain-Source Voltage [V] QG, Total Gate Charge [nC] Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics (c)2005 Fairchild Semiconductor Corporation Rev. B, February 2005 (Continued) 1.2 3.0 1.1 1.0 Notes : 1. VGS = 0 V 2. ID = 250 A 0.9 0.8 -100 -50 0 50 100 150 2.5 RDS(ON), (Normalized) Drain-Source On-Resistance BVDSS, (Normalized) Drain-Source Breakdown Voltage IRF840B/IRFS840B Typical Characteristics 2.0 1.5 1.0 Notes : 1. VGS = 10 V 2. ID = 4.0 A 0.5 0.0 -100 200 -50 0 50 100 150 200 o o TJ, Junction Temperature [ C] TJ, Junction Temperature [ C] Figure 7. Breakdown Voltage Variation vs Temperature Figure 8. On-Resistance Variation vs Temperature 2 10 100 s 1 ms 10 ms 1 10 10 s DC 0 10 -1 10 ms 100 ms DC 0 10 -1 10 Notes : o 1. TC = 25 C o 2. TJ = 150 C 3. Single Pulse 10 100 s 1 ms 1 10 ID, Drain Current [A] ID, Drain Current [A] 10 -2 10 Operation in This Area is Limited by R DS(on) Operation in This Area is Limited by R DS(on) 2 Notes : o 1. TC = 25 C o 2. TJ = 150 C 3. Single Pulse -2 0 1 10 2 10 3 10 10 VDS, Drain-Source Voltage [V] 10 0 10 1 10 2 10 3 10 VDS, Drain-Source Voltage [V] Figure 9-1. Maximum Safe Operating Area for IRF840B Figure 9-2. Maximum Safe Operating Area for IRFS840B 10 ID, Drain Current [A] 8 6 4 2 0 25 50 75 100 125 150 TC, Case Temperature [] Figure 10. Maximum Drain Current vs Case Temperature (c)2005 Fairchild Semiconductor Corporation Rev. B, February 2005 Z JC(t), Thermal Response 10 IRF840B/IRFS840B Typical Characteristics (Continued) 0 D = 0 .5 N o te s : 1 . Z J C (t) = 0 .9 3 /W M a x . 2 . D u ty F a c to r, D = t 1 /t 2 3 . T J M - T C = P D M * Z J C (t) 0 .2 10 0 .1 -1 0 .0 5 PDM 0 .0 2 0 .0 1 10 t1 s in g le p u ls e -2 10 -5 10 -4 10 -3 10 -2 10 -1 t2 10 0 10 1 t 1 , S q u a re W a v e P u ls e D u r a tio n [s e c ] Figure 11-1. Transient Thermal Response Curve for IRF840B Z JC(t), Thermal Response D = 0 .5 10 0 0 .2 N o te s : 1 . Z J C (t) = 2 .8 6 /W M a x . 2 . D u ty F a c to r, D = t 1 /t 2 3 . T J M - T C = P D M * Z J C (t) 0 .1 0 .0 5 10 -1 0 .0 2 PDM 0 .0 1 t1 t2 s in g le p u ls e 10 -2 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 t 1 , S q u a re W a v e P u ls e D u r a tio n [s e c ] Figure 11-2. Transient Thermal Response Curve for IRFS840B (c)2005 Fairchild Semiconductor Corporation Rev. B, February 2005 IRF840B/IRFS840B Gate Charge Test Circuit & Waveform VGS Same Type as DUT 50K 200nF 12V Qg 10V 300nF VDS VGS Qgs Qgd DUT 3mA Charge Resistive Switching Test Circuit & Waveforms VDS RG RL VDS 90% VDD VGS VGS DUT 10V 10% td(on) tr td(off) t on tf t off Unclamped Inductive Switching Test Circuit & Waveforms BVDSS 1 EAS = ---- L IAS2 -------------------2 BVDSS - VDD L VDS BVDSS IAS ID RG VDD DUT 10V tp (c)2005 Fairchild Semiconductor Corporation ID (t) VDS (t) VDD tp Time Rev. B, February 2005 IRF840B/IRFS840B Peak Diode Recovery dv/dt Test Circuit & Waveforms DUT + VDS _ I SD L Driver RG VGS VGS ( Driver ) Same Type as DUT VDD * dv/dt controlled by RG * ISD controlled by pulse period Gate Pulse Width D = -------------------------Gate Pulse Period 10V IFM , Body Diode Forward Current I SD ( DUT ) di/dt IRM Body Diode Reverse Current VDS ( DUT ) Body Diode Recovery dv/dt VSD VDD Body Diode Forward Voltage Drop (c)2005 Fairchild Semiconductor Corporation Rev. B, February 2005 IRF840B/IRFS840B Mechanical Dimensions TO - 220 Dimensions in Millimeters (c)2005 Fairchild Semiconductor Corporation Rev. B, February 2005 (Continued) 3.30 0.10 TO-220F 10.16 0.20 2.54 0.20 o3.18 0.10 (7.00) (1.00x45) 15.87 0.20 15.80 0.20 6.68 0.20 (0.70) 0.80 0.10 ) 0 (3 9.75 0.30 MAX1.47 #1 +0.10 0.50 -0.05 2.54TYP [2.54 0.20] 2.76 0.20 2.54TYP [2.54 0.20] 9.40 0.20 4.70 0.20 0.35 0.10 Dimensions in Millimeters (c)2005 Fairchild Semiconductor Corporation Rev. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. (c)2005 Fairchild Semiconductor Corporation Rev. I15