©2005 Fairchild Semiconductor Corporation
February 2005
Rev. B, February 2005
IRF840B/IRFS840B
IRF840B/IRFS840B
500V N-Ch annel MOSFET
General Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for high efficiency switch mode power supplies,
power factor correction and electronic lamp ballasts based
on half bridge.
Features
• 8.0A, 500V, RDS(on) = 0.8Ω @VGS = 10 V
• Low gate charge ( typical 41 nC)
• Low Crss ( typical 35 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
Absolute Maximum Ratings TC = 25°C unless otherwise noted
* Drain current limited by maximum junction temperature.
Thermal Char acteristics
Symbol Parameter IRF840B IRFS840B Units
VDSS Drain-Source Voltage 500 V
IDDrain Current - Continuous (TC = 25°C) 8.0 8.0 A
- Continuous (TC = 100°C) 5.1 5.1 A
IDM Drain Current - Pulsed (Note 1) 32 32 A
VGSS Gate-Source Voltage ± 30 V
EAS Single Pulsed Avalanche Energy (Note 2) 320 mJ
IAR Avalanche Current (Note 1) 8.0 A
EAR Repetitive Avalanche Energy (Note 1) 13.4 mJ
dv/dt Peak Diode Recovery dv/dt (Note 3) 5.5 V/ns
PDPower Dissipation (TC = 25°C) 134 44 W
- Derate above 25°C 1.08 0.35 W/°C
TJ, TSTG Operating and Storage Temperature Range -55 to +150 °C
TL
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds 300 °C
Symbol Parameter IRF840B IRFS840B Units
RθJC Thermal Resistance, Junction-to-Case Max. 0.93 2.86 °C/W
RθCS Thermal Resistance, Case-to-Sink Typ. 0.5 -- °C/W
RθJA Thermal Resistance, Junction-to-Ambient Max. 62.5 62.5 °C/W
S
D
G
TO-220F
IRFS Series
GS
D
TO-220
IRF Seri es
GS
D
Rev. B, February 2005
IRF840B/IRFS840B
©2005 Fairchild Semiconductor Corporation
Electrical Characteristics TC = 25°C unless otherwise noted
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 9.0mH, IAS = 8.0A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C
3. ISD ≤ 8.0A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C
4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2%
5. Essentially independent of operating temperature
Symbol Parame ter Test Co nditions Min Typ Max Units
Off Characteristics
BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 µA500 -- -- V
∆BVDSS
/ ∆TJ
Breakdown Voltage Temperature
Coefficient ID = 250 µA, Referenced to 25°C -- 0.55 -- V/°C
IDSS Zero Gate Voltage Drain Current VDS = 500 V, VGS = 0 V -- -- 10 µA
VDS = 400 V, TC = 125°C -- -- 100 µA
IGSSF Gate-Body Leakage Current, Forward VGS = 30 V, VDS = 0 V -- -- 100 nA
IGSSR Gate-Body Leakage Current, Reverse VGS = -30 V, VDS = 0 V -- -- -100 nA
On Characteri st ics
VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 µA2.0 -- 4.0 V
RDS(on) Static Drain-Source
On-Resistance VGS = 10 V, ID = 4.0 A -- 0.65 0.8 Ω
gFS Forward Transconductance VDS = 40 V, ID = 4.0 A (Note 4) -- 7.3 -- S
Dynamic Characteristics
Ciss Input Capacitance VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
-- 1400 1800 pF
Coss Output Capacitance -- 145 190 pF
Crss Reverse Transfer Capacitance -- 35 45 pF
Switching Characteristics
td(on) Turn-On Delay Time VDD = 250 V, ID = 8.0 A,
RG = 25 Ω
(Note 4, 5)
-- 22 55 ns
trTurn-On Rise Time -- 65 140 ns
td(off) Turn-Off Delay Time -- 125 260 ns
tfTurn-Off Fall Time -- 75 160 ns
QgTotal Gate Charge VDS = 400 V, ID = 8.0 A,
VGS = 10 V
(Note 4, 5)
-- 41 53 nC
Qgs Gate-Source Charge -- 6.5 -- nC
Qgd Gate-Drain Charge -- 17 -- nC
Drain-Source Diode Characteristics and Maximum Ratings
ISMaximum Continuous Drain-Source Diode Forward Current -- -- 8.0 A
ISM Maximum Pulsed Drain-Source Diode Forward Current -- -- 32 A
VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = 8.0 A -- -- 1.4 V
trr Reverse Recovery Time VGS = 0 V, IS = 8.0 A,
dIF / dt = 100 A/µs (Note 4)
-- 390 -- ns
Qrr Reverse Recovery Charge -- 4.2 -- µC
Rev. B, February 2005©2005 Fairchild Semiconductor Corporation
IRF840B/IRFS840B
0 5 10 15 20 25 30
0.5
1.0
1.5
2.0
2.5
3.0
VGS = 20V
V
GS = 10V
Note : T※J = 25℃
RDS(ON) [Ω],
Drain-Source On-Resistance
ID
, Drain Current [A]
246810
10-1
100
101
150oC
25oC
-55oC Notes :※
1. VDS = 40V
2. 250µ s Pulse Test
ID, Drain Current [A]
V
GS, Gate-Source Voltage [V]
10-1 100101
10-1
100
101
VGS
Top : 15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
5.5 V
Bottom : 5.0 V
Notes :※
1. 250µ s Pulse Test
2. TC
= 25℃
ID, Drain Current [A]
V
DS, Drain-Source Voltage [V]
0 5 10 15 20 25 30 35 40 45
0
2
4
6
8
10
12
V
DS = 250V
VDS = 100V
V
DS = 400V
Note : I※D
= 8.0 A
VGS, Gate-Source Voltage [V]
Q
G
, Total Gate Charge [nC]
10-1 100101
0
500
1000
1500
2000
2500
3000
Coss
C
iss = Cgs + Cgd (Cds = shorted)
C
oss = Cds + Cgd
C
rss = Cgd
Notes :※
1. VGS = 0 V
2. f = 1 MHz
Crss
Ciss
Capacitance [pF]
V
DS, Drain-Source Voltage [V]
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
10-1
100
101
150℃
Notes :※
1. VGS = 0V
2. 250µ s Pulse Test
25℃
IDR, Reverse Drain Current [A]
V
SD, Source-Drain voltage [V]
Typical Characteristics
Figure 5. Capacitance Cha rac te ri st i cs Figure 6. Gate Char ge Character is tics
Figure 3. On-Resistance Vari at ion vs
Drain Current and Gate Voltage Figur e 4. B ody Diode Forward Voltage
Variation with Sour ce Cur r ent
and Temperature
Figure 2. Transfer CharacteristicsFigure 1. On- R egi on Charact er ist ic s
©2005 Fairchild Semiconductor Corporation Rev. B, February 2005
IRF840B/IRFS840B
100101102103
10-2
10-1
100
101
102
100 ms
DC
10 ms
1 ms
100 µs
Operation in This Area
is Limited by R DS(on)
Notes :※
1. TC
= 25 o
C
2. TJ
= 150 o
C
3. Single Pulse
ID, Drain Current [A]
V
DS, Drain-Source Voltage [V]
25 50 75 100 125 150
0
2
4
6
8
10
ID, Drain Current [A]
TC
, Case Temperature [ ]℃
100101102103
10-2
10-1
100
101
102
10 µs
DC
10 ms
1 ms
100 µs
Operation in This Area
is Limited by R DS(on)
Notes :※
1. TC
= 25 o
C
2. TJ
= 150 o
C
3. Single Pulse
ID, Drain Current [A]
V
DS, Drain-Source Voltage [V]
-100 -50 0 50 100 150 200
0.0
0.5
1.0
1.5
2.0
2.5
3.0
Notes :※
1. VGS = 10 V
2. ID
= 4.0 A
RDS(ON), (Normalized)
Drain-Source On-Resistance
T
J, Junction Temperature [oC]
-100 -50 0 50 100 150 200
0.8
0.9
1.0
1.1
1.2
Notes :※
1. VGS = 0 V
2. ID
= 250 µ A
BVDSS, (Normalized)
Drain-Source Breakdown Voltage
T
J
, Junction Temperature [o
C]
Typical Characteristics (Continued)
Figure 9 -1. M aximum Safe O per at in g Are a
for I R F 8 40B
Figure 10. Maximum Drain Current
vs Case Temperature
Figu re 7. Breakdown Vol tage Variati o n
vs Temperature Figure 8. On-Resistance Variation
vs Temperature
Figure 9-2. Maxim um Saf e Operat ing Ar ea
for IRF S 84 0B
Rev. B, February 2005©2005 Fairchild Semiconductor Corporation
IRF840B/IRFS840B
Typical Characteristics (Continued)
10-5 10-4 10-3 10-2 10-1 100101
10-2
10-1
100
N o tes :※
1. ZθJC(t) = 0.93 /W M ax.℃
2. D u ty Fac tor, D = t1/t2
3. TJM - TC = PDM * ZθJC(t)
sin g le p u lse
D=0.5
0.02
0.2
0.05
0.1
0.01
ZθJC
(t), Thermal Response
t1, Square Wave Pulse Duration [sec]
Figure 11-1. Transient The rm al Respon se C ur ve for IRF840 B
t1
PDM
t2
10-5 10-4 10-3 10-2 10-1 100101
10-2
10-1
100
N o tes :※
1. ZθJC(t) = 2.86 /W Max.℃
2. Duty Factor, D=t1/t2
3. TJM - TC = PDM * ZθJC(t)
sin g le p u lse
D=0.5
0.02
0.2
0.05
0.1
0.01
ZθJC
(t), Thermal Response
t1, Square Wave Pulse Duration [sec]
Figure 11-2. T r ansient Thermal Response Curve for IRFS840B
t1
PDM
t2
Rev. B, February 2005©2005 Fairchild Semiconductor Corporation
IRF840B/IRFS840B
Charge
VGS
10V
Qg
Qgs Qgd
3mA
VGS
DUT
VDS
300nF
50KΩ
200nF
12V
Same Type
as DUT
Charge
VGS
10V
Qg
Qgs Qgd
3mA
VGS
DUT
VDS
300nF
50KΩ
200nF
12V
Same Type
as DUT
VGS
VDS
10%
90%
td(on) tr
ton toff
td(off ) tf
VDD
10V
VDS
RL
DUT
RG
VGS
VGS
VDS
10%
90%
td(on) tr
ton toff
td(off ) tf
VDD
10V
VDS
RL
DUT
RG
VGS
EAS =LI
AS2
----
2
1--------------------
BVDSS -V
DD
BVDSS
VDD
VDS
BVDSS
t p
VDD
IAS
VDS (t)
ID (t)
Time
10V DUT
RG
L
ID
t p
EAS =LI
AS2
----
2
1
EAS =LI
AS2
----
2
1
----
2
1--------------------
BVDSS -V
DD
BVDSS
VDD
VDS
BVDSS
t p
VDD
IAS
VDS (t)
ID (t)
Time
10V DUT
RG
LL
ID
ID
t p
Gate Charge Test Circuit & Waveform
Resistive Switching Test Circuit & Waveforms
Unclamped Inductive Switching Test Circuit & Waveforms
©2005 Fairchild Semiconductor Corporation Rev. B, February 2005
IRF840B/IRFS840B
Peak Diode Recover y dv/dt Tes t Circuit & Waveforms
DUT
VDS
+
_
Driver
RGSame Type
as DUT
VGS • dv/dt controlled by RG
•I
SD controlled by pulse period
VDD
L
ISD
10V
VGS
( Driver )
ISD
( DUT )
VDS
( DUT )
VDD
Body Diode
Forward Voltage Drop
VSD
IFM , Body Diode Forward Current
Body Diode Reverse Current
IRM
Body Diode Recovery dv/dt
di/dt
D = Gate Pulse Width
Gate Pulse Period
--------------------------
DUT
VDS
+
_
Driver
RGSame Type
as DUT
VGS • dv/dt controlled by RG
•I
SD controlled by pulse period
VDD
LL
ISD
10V
VGS
( Driver )
ISD
( DUT )
VDS
( DUT )
VDD
Body Diode
Forward Voltage Drop
VSD
IFM , Body Diode Forward Current
Body Diode Reverse Current
IRM
Body Diode Recovery dv/dt
di/dt
D = Gate Pulse Width
Gate Pulse Period
--------------------------
D = Gate Pulse Width
Gate Pulse Period
--------------------------
Rev. B, February 2005©2005 Fairchild Semiconductor Corporation
IRF840B/IRFS840B
Mechanical Dimensions
Dimensions in Millimeters
TO - 220
Rev. B, February 2005©2005 Fairchild Semiconductor Corporation
IRF840B/IRFS840B
Package Dimensions (Continued)
(7.00) (0.70)
MAX1.47
(30°)
#1
3.30 ±0.10
15.80 ±0.20
15.87 ±0.20
6.68 ±0.20
9.75 ±0.30
4.70 ±0.20
10.16 ±0.20
(1.00x45°)
2.54 ±0.20
0.80 ±0.10
9.40 ±0.20
2.76 ±0.20
0.35 ±0.10
ø3.18 ±0.10
2.54TYP
[2.54 ±0.20]2.54TYP
[2.54 ±0.20]
0.50 +0.10
–0.05
TO-220F
Dimensions in Millimeters
©2005 Fairchild Semiconductor Corporation
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY
LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;
NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR
CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems
which, (a) are intended for surgical implant into the body,
or (b) support or sustain life, or (c) whose failure to perform
when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
result in significant injury to the user.
2. A critical component is any component of a life support
device or system whose failure to perform can be
reasonably expected to cause the failure of the life support
device or system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification Product Status Definition
Advance Information Formative or In
Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary First Production This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed Full Production This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Obsolete Not In Production This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. I15
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