SOT23 N-CHANNEL ENHANCEMENT
MODE VERTICAL DMOS FET
ISSUE 2 – DECEMBER 1995
PARMAR KING DETAIL - MZ
ABSOLUTE MAXI MUM RATI NGS.
PARAMETER SYMBOL VALUE UNIT
Drain-Source Voltage VDS 60 V
Continuous D rain Current at Tamb=25°C ID0.2 A
Pulsed Drain Current IDM 3A
Gate-Source Voltage VGS ± 20 V
Max Power Di ssipation at Tamb=25°C Ptot 330 mW
Operating and Storage Temperature Range Tj:Tstg - 55 to +150 °C
ELECTRIC AL CH AR ACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER SYMBOL MIN. MAX. UNIT CONDITIONS.
Drain-Source Breakdown
Voltage BVDSS 60 V ID=1mA, VGS=0V
Gate-Source Threshold
Voltage VGS(th) 1.3 3 V ID=1mA, VDS= VGS
Gate-Body Leakage IGSS 100 nA VGS=± 20V, VDS=0V
Zero Ga te Voltage Drain
Current IDSS 10
50 µA
µAVDS=60V, VGS=0
VDS=48V, VGS=0V, T=125°C(2)
On-State Drain Current(1) ID(on) 1AV
DS=25V, VGS=10V
Static Drain-Source On-State
Resistance (1) RDS(on) 2.5
5Ω
ΩVGS=10V, ID=500mA
VGS=5V, ID=200mA
Forward Transconductance(1)(2
)gfs 150 mS VDS=25V, ID=250mA
Input Capacitance (2) Ciss 35 pF
Common Source O utput
Capacitance (2) Coss 25 pF VDS=25V, VGS=0V, f=1MHz
Reverse Transfer Capacitance
(2) Crss 8pF
Turn-On De lay Time (2)(3) Td(on) 5ns
VDD
≈25V, ID=150mA
Rise Time (2)(3) Tr7ns
Turn-Off De lay Time (2)(3) Td(off) 6ns
Fall Time (2)(3) Tf8ns
(1) Measured under pulsed conditions. Width=300µs. Duty cycle ≤2% (2) Sample test.
(3) Switching times measured with 500Ω source impedance and <5ns rise time on a pulse generator
Spice parameter data is available upon request for this device
ZVN4106F
ZVN4106F
3 - 400 3 - 399
D
G
S
04 10
-50 50 150
0 30 60 0 1.8
2.01.00
0.01 10
VDS - Drain Source Voltage (V)
Saturation Characteristics
0
2
4
ID - Drain Current (A)
ID=0.5A
Normalised RDS(on) and VGS(th)
1.8
0
Tj- Junction Temperature ( °C)
Normalised RDS(on) & VGS(th) v Temperature
Coss
Crss
C - Capacitance (pF)
80
40
Ciss
0
VDS - Drain Source Voltage (V)
Capacitance v Drain Source Voltage
RDS(on) - Drain Source On Resistance (Ω)
100
10
1
ID- Drain Current (A)
On-Resistance v Drain Current
gfs - Transconductance (S)
300
0
ID(on) - Drain Current (A)
Transconductance v Drain Current
VGS - Gate Source Voltage (V)
16
8
0
Q - Charge (nC)
Gate Source Voltage v Gate Charge
VGS=3.5V
RDS(on) VDS=10V
VGS(th)
3
1
268
VGS=20V
16V
14V
12V
10V
9V
8V
7V
6V
5V
4V
0.1 1
4V 5V
6V
8V
10V 14V20V
0 100
0.6
1.2
100
200
0.5 1.5
15 45
20
60
4
12
0.6 1.2
ID=0.5A VDD=20V 40V 50V
SOT23 N-CHANNEL ENHANCEMENT
MODE VERTICAL DMOS FET
ISSUE 2 – DECEMBER 1995
PARMAR KING DETAIL - MZ
ABSOLUTE MAXI MUM RATI NGS.
PARAMETER SYMBOL VALUE UNIT
Drain-Source Voltage VDS 60 V
Continuous D rain Current at Tamb=25°C ID0.2 A
Pulsed Drain Current IDM 3A
Gate-Source Voltage VGS ± 20 V
Max Power Di ssipation at Tamb=25°C Ptot 330 mW
Operating and Storage Temperature Range Tj:Tstg - 55 to +150 °C
ELECTRIC AL CH AR ACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER SYMBOL MIN. MAX. UNIT CONDITIONS.
Drain-Source Breakdown
Voltage BVDSS 60 V ID=1mA, VGS=0V
Gate-Source Threshold
Voltage VGS(th) 1.3 3 V ID=1mA, VDS= VGS
Gate-Body Leakage IGSS 100 nA VGS=± 20V, VDS=0V
Zero Ga te Voltage Drain
Current IDSS 10
50 µA
µAVDS=60V, VGS=0
VDS=48V, VGS=0V, T=125°C(2)
On-State Drain Current(1) ID(on) 1AV
DS=25V, VGS=10V
Static Drain-Source On-State
Resistance (1) RDS(on) 2.5
5Ω
ΩVGS=10V, ID=500mA
VGS=5V, ID=200mA
Forward Transconductance(1)(2
)gfs 150 mS VDS=25V, ID=250mA
Input Capacitance (2) Ciss 35 pF
Common Source O utput
Capacitance (2) Coss 25 pF VDS=25V, VGS=0V, f=1MHz
Reverse Transfer Capacitance
(2) Crss 8pF
Turn-On De lay Time (2)(3) Td(on) 5ns
VDD
≈25V, ID=150mA
Rise Time (2)(3) Tr7ns
Turn-Off De lay Time (2)(3) Td(off) 6ns
Fall Time (2)(3) Tf8ns
(1) Measured under pulsed conditions. Width=300µs. Duty cycle ≤2% (2) Sample test.
(3) Switching times measured with 500Ω source impedance and <5ns rise time on a pulse generator
Spice parameter data is available upon request for this device
ZVN4106F
ZVN4106F
3 - 400 3 - 399
D
G
S
04 10
-50 50 150
0 30 60 0 1.8
2.01.00
0.01 10
VDS - Drain Source Voltage (V)
Saturation Characteristics
0
2
4
ID - Drain Current (A)
ID=0.5A
Normalised RDS(on) and VGS(th)
1.8
0
Tj- Junction Temperature ( °C)
Normalised RDS(on) & VGS(th) v Temperature
Coss
Crss
C - Capacitance (pF)
80
40
Ciss
0
VDS - Drain Source Voltage (V)
Capacitance v Drain Source Voltage
RDS(on) - Drain Source On Resistance (Ω)
100
10
1
ID- Drain Current (A)
On-Resistance v Drain Current
gfs - Transconductance (S)
300
0
ID(on) - Drain Current (A)
Transconductance v Drain Current
VGS - Gate Source Voltage (V)
16
8
0
Q - Charge (nC)
Gate Source Voltage v Gate Charge
VGS=3.5V
RDS(on) VDS=10V
VGS(th)
3
1
268
VGS=20V
16V
14V
12V
10V
9V
8V
7V
6V
5V
4V
0.1 1
4V 5V
6V
8V
10V 14V20V
0 100
0.6
1.2
100
200
0.5 1.5
15 45
20
60
4
12
0.6 1.2
ID=0.5A VDD=20V 40V 50V
