FDC6420C Rev C(W)
Electrical Characteristics TA = 25°C unless otherwise noted
Symbol Parameter Test Conditions Min Typ Max Units
Off Characteristics
BVDSS Drain–Source Breakdown Voltage VGS = 0 V, ID = 250 µA
VGS = 0 V, ID = –250 µAQ1
Q2 20
–20 V
∆BVDSS
∆TJ
Breakdown Voltage Temperature
Coefficient ID = 250 µA, Ref. to 25°C
ID = –250 µA, Ref. to 25°CQ1
Q2 13
–11 mV/°C
IDSS Zero Gate Voltage Drain Current V
= 16 V, V
= 0 V
V
= –16 V, V
= 0 V Q1
Q2 1
–1 µA
IGSSF Gate–Body Leakage, Forward V
= 12 V, V
= 0 V
V
= 12 V, V
= 0 V Q1
Q2 100
100 nA
IGSSR Gate–Body Leakage, Reverse V
= –12 V, V
= 0 V
V
= –12 V, V
= 0 V Q1
Q2 –100
–100 nA
On Characteristics (Note 2)
VGS(th)Q1 VDS = VGS, ID = 250 µA0.5 0.9 1.5Gate Threshold Voltage
Q2 VDS = VGS, ID = –250 µA–0.6 –1.0 –1.5
V
∆VGS(th) Q1 ID = 250 µA, Ref. To 25°C–3
∆TJ
Gate Threshold Voltage
Temperature Coefficient Q2 ID = –250 µA, Ref. to 25°C–3
mV/°C
RDS(on) Q1 VGS = 4.5 V, ID = 3.0 A
VGS = 2.5 V, ID = 2.5 A
VGS = 4.5 V, ID = 3.0 A,TJ=125°C
50
66
71
70
95
106
Static Drain–Source
On–Resistance
Q2 VGS = –4.5 V, ID = –2.2 A
VGS =– 2.5 V, ID = –1.8 A
VGS= – 4.5 V,ID=–2.2 A,TJ=125°C
100
145
137
125
190
184
mΩ
ID(on) Q1 VGS = 4.5 V, VDS = 5 V 12On–State Drain Current
Q2 VGS = –4.5 V, VDS = –5 V –6 A
gFS Q1 VDS = 5 V ID = 2.5 A 10
Forward Transconductance
Q2 VDS = –5 V ID = –2.0A 6S
Dynamic Characteristics
Ciss Q1 VDS=10 V, V GS= 0 V, f=1.0MHz 324
Input Capacitance Q2 VDS=–10 V, V GS= 0 V, f=1.0MHz 337 pF
Coss Q1 VDS=10 V, V GS= 0 V, f=1.0MHz 82Output Capacitance
Q2 VDS=–10 V, V GS= 0 V, f=1.0MHz 88 pF
Crss Q1 VDS=10 V, V GS= 0 V, f=1.0MHz 42Reverse Transfer Capacitance
Q2 VDS=–10 V, V GS= 0 V, f=1.0MHz 51 pF
Switching Characteristics (Note 2)
td(on) Q1 5 10
Turn–On Delay Time Q2 9 18 ns
trQ1 7 14
Turn–On Rise Time Q2 12 22 ns
td(off) Q1 13 23
Turn–Off Delay Time Q2 10 20 ns
tfQ1 1.6 3
Turn–Off Fall Time Q2
For Q1:
VDS =10 V, I DS= 1 A
VGS= 4.5 V, RGEN = 6 Ω
For Q2:
VDS =–10 V, I DS= –1 A
VGS= –4.5 V, RGEN = 6 Ω
5 10 ns
QgQ1 3.3 4.6
Total Gate Charge Q2 3.7 nC
Qgs Q1 0.95
Gate–Source Charge Q2 0.68 nC
Qgd Q1 0.7
Gate–Drain Charge Q2
For Q1:
VDS =10 V, I DS= 3.0 A
VGS= 4.5 V,
For Q2:
VDS =–10 V, I DS= –2.2 A
VGS= –4.5 V, 1.3 nC