IRF720, SiHF720 www.vishay.com Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS (V) * Dynamic dV/dt rating 400 V RDS(on) () VGS = 10 V Qg (Max.) (nC) 20 * Fast switching Qgs (nC) 3.3 * Ease of paralleling 11 * Simple drive requirements Qgd (nC) Configuration Available * Repetitive avalanche rated 1.8 Single RoHS* COMPLIANT * Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 D Note * This datasheet provides information about parts that are RoHS-compliant and/or parts that are non-RoHS-compliant. For example, parts with lead (Pb) terminations are not RoHS-compliant. Please see the information/tables in this datasheet for details. TO-220AB G DESCRIPTION G D Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220AB package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 W. The low thermal resistance and low package cost of the TO-220AB contribute to its wide acceptance throughout the industry. S S N-Channel MOSFET ORDERING INFORMATION Package TO-220AB IRF720PbF SiHF720-E3 IRF720 SiHF720 Lead (Pb)-free SnPb ABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless otherwise noted) PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage VDS 400 V Gate-Source Voltage VGS 20 V VGS at 10 V Continuous Drain Current TC = 25 C TC = 100 C Pulsed Drain Currenta ID IDM Linear Derating Factor 3.3 2.1 A 13 0.40 W/C Single Pulse Avalanche Energy b EAS 190 mJ Repetitive Avalanche Current a IAR 3.3 A Repetitive Avalanche Energy a EAR 5.0 mJ PD 50 W dV/dt 4.0 V/ns TJ, Tstg -55 to +150 Maximum Power Dissipation Peak Diode Recovery dV/dt TC = 25 C c Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature) d Mounting Torque for 10 s 6-32 or M3 screw 300 C 10 lbf * in 1.1 N*m Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. VDD = 50 V, starting TJ = 25 C, L = 30 mH, Rg = 25 , IAS = 3.3 A (see fig. 12). c. ISD 3.3 A, dI/dt 65 A/s, VDD VDS, TJ 150 C. d. 1.6 mm from case. S14-2355-Rev. C, 08-Dec-14 Document Number: 91043 1 For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IRF720, SiHF720 www.vishay.com Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER SYMBOL TYP. MAX. Maximum Junction-to-Ambient RthJA - 62 Case-to-Sink, Flat, Greased Surface RthCS 0.50 - Maximum Junction-to-Case (Drain) RthJC - 2.5 UNIT C/W SPECIFICATIONS (TJ = 25 C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT VDS VGS = 0 V, ID = 250 A 400 - - V VDS/TJ Reference to 25 C, ID = 1 mA - 0.51 - V/C Static Drain-Source Breakdown Voltage VDS Temperature Coefficient VGS(th) VDS = VGS, ID = 250 A 2.0 - 4.0 V Gate-Source Leakage IGSS VGS = 20 - - 100 nA Zero Gate Voltage Drain Current IDSS Gate-Source Threshold Voltage VDS = 400 V, VGS = 0 V - - 25 VDS = 320 V, VGS = 0 V, TJ = 125 C - - 250 A - - 1.8 gfs VDS = 50 V, ID = 2.0 A b 1.7 - - S Input Capacitance Ciss 410 - Coss - 120 - Reverse Transfer Capacitance Crss VGS = 0 V, VDS = 25 V, f = 1.0 MHz, see fig. 5 - Output Capacitance - 47 - - - 20 - - 3.3 - - 11 Drain-Source On-State Resistance Forward Transconductance RDS(on) ID = 2.0 A b VGS = 10 V Dynamic pF Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Turn-On Delay Time td(on) - 10 - tr - 14 - - 30 - - 13 - - 4.5 - - 7.5 - - - 3.3 S - - 13 TJ = 25 C, IS = 3.3 A, VGS = 0 V b - - 1.6 V - 270 600 ns - 1.4 3.0 C Rise Time Turn-Off Delay Time td(off) Fall Time tf Internal Drain Inductance LD Internal Source Inductance LS VGS = 10 V ID = 3.3 A, VDS = 320 V, see fig. 6 and 13 b VDD = 200 V, ID = 3.3 A Rg = 18 , RD = 56 , see fig. 10 b Between lead, 6 mm (0.25") from package and center of die contact D nC ns nH G S Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current IS Pulsed Diode Forward Current a ISM Body Diode Voltage VSD Body Diode Reverse Recovery Time trr Body Diode Reverse Recovery Charge Qrr Forward Turn-On Time ton MOSFET symbol showing the integral reverse p - n junction diode D A G TJ = 25 C, IF = 3.3 A, dI/dt = 100 A/s b Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD) Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. Pulse width 300 s; duty cycle 2 %. S14-2355-Rev. C, 08-Dec-14 Document Number: 91043 2 For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IRF720, SiHF720 www.vishay.com Vishay Siliconix 100 VGS 15 V 10 V 8.0 V 7.0 V 6.0 V 5.5 V 5.0 V Bottom 4.5 V Top 10-1 4.5 V 20 s Pulse Width TC = 25 C 10-2 10-1 100 101 VDS, Drain-to-Source Voltage (V) 91043_01 ID, Drain Current (A) 100 2.5 2.0 1.5 1.0 0.5 0.0 - 60 - 40 - 20 0 4.5 V Fig. 4 - Normalized On-Resistance vs. Temperature 20 s Pulse Width TC = 150 C 10-1 100 200 Crss Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage VGS, Gate-to-Source Voltage (V) 1 0.1 VDS = 26.2V 6 7 8 9 VGS, Gate-to-Source Voltage (V) Fig. 3 - Typical Transfer Characteristics 101 VDS, Drain-to-Source Voltage (V) 20 TJ = 150 C ID, Drain-to-Source Current (A) Coss 91043_05 TJ = 25 C S14-2355-Rev. C, 08-Dec-14 400 0 10 5 Ciss 100 Fig. 2 - Typical Output Characteristics, TC = 150 C 4 VGS = 0 V, f = 1 MHz Ciss = Cgs + Cgd, Cds Shorted Crss = Cgd Coss = Cds + Cgd 600 101 VDS, Drain-to-Source Voltage (V) 0.01 20 40 60 80 100 120 140 160 TJ, Junction Temperature (C) 800 10-1 91043_02 3.0 1000 VGS Top 15 V 10 V 8.0 V 7.0 V 6.0 V 5.5 V 5.0 V Bottom 4.5 V 10-2 ID = 3.3 A VGS = 10 V 91043_04 Fig. 1 - Typical Output Characteristics, TC = 25 C 101 3.5 Capacitance (pF) ID, Drain Current (A) 101 RDS(on), Drain-to-Source On Resistance (Normalized) TYPICAL CHARACTERISTICS (25 C, unless otherwise noted) ID = 3.3 A VDS = 320 V 16 VDS = 200 V VDS = 80 V 12 8 4 For test circuit see figure 13 0 0 10 91043_06 5 10 15 20 25 QG, Total Gate Charge (nC) Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage Document Number: 91043 3 For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IRF720, SiHF720 www.vishay.com Vishay Siliconix 3.5 ISD, Reverse Drain Current (A) 101 ID, Drain Current (A) 3.0 150 C 100 25 C 2.5 2.0 1.5 1.0 0.5 VGS = 0 V 10-1 0.0 0.4 0.6 0.8 1.2 1.0 1.4 25 VSD, Source-to-Drain Voltage (V) 91043_07 75 100 125 150 TC, Case Temperature (C) 91043_09 Fig. 7 - Typical Source-Drain Diode Forward Voltage Fig. 9 - Maximum Drain Current vs. Case Temperature RD 102 VDS Operation in this area limited by RDS(on) 5 VGS 2 10 ID, Drain Current (A) 50 10 s D.U.T. RG 5 + - VDD 100 s 2 1 10 V 1 ms Pulse width 1 s Duty factor 0.1 % 5 10 ms 2 0.1 Fig. 10a - Switching Time Test Circuit 5 TC = 25 C TJ = 150 C Single Pulse 2 10-2 0.1 2 5 1 2 5 10 2 VDS 5 102 2 5 90 % 103 VDS, Drain-to-Source Voltage (V) 91043_08 Fig. 8 - Maximum Safe Operating Area 10 % VGS td(on) td(off) tf tr Fig. 10b - Switching Time Waveforms Thermal Response (ZthJC) 10 1 0 - 0.5 0.2 PDM 0.1 0.05 0.1 t1 0.02 0.01 Single Pulse (Thermal Response) t2 Notes: 1. Duty Factor, D = t1/t2 2. Peak Tj = PDM x ZthJC + TC 10-2 10-5 91043_11 10-4 10-3 10-2 0.1 1 10 t1, Rectangular Pulse Duration (s) Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case S14-2355-Rev. C, 08-Dec-14 Document Number: 91043 4 For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IRF720, SiHF720 www.vishay.com Vishay Siliconix L Vary tp to obtain required IAS VDS QG VGS D.U.T RG + - I AS QGS QGD V DD VG 10 V 0.01 tp Charge Fig. 12a - Unclamped Inductive Test Circuit Fig. 13a - Basic Gate Charge Waveform Current regulator Same type as D.U.T. VDS 50 k tp 12 V 0.2 F VDD 0.3 F + D.U.T. VDS - VDS VGS 3 mA IAS IG ID Current sampling resistors Fig. 12b - Unclamped Inductive Waveforms Fig. 13b - Gate Charge Test Circuit EAS, Single Pulse Energy (mJ) 500 ID 1.5 A 2.1 A Bottom 3.3 A Top 400 300 200 100 0 VDD = 50 V 25 91043_12c 50 75 100 125 150 Starting TJ, Junction Temperature (C) Fig. 12c - Maximum Avalanche Energy vs. Drain Current S14-2355-Rev. C, 08-Dec-14 Document Number: 91043 5 For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IRF720, SiHF720 www.vishay.com Vishay Siliconix Peak Diode Recovery dV/dt Test Circuit + D.U.T. Circuit layout considerations * Low stray inductance * Ground plane * Low leakage inductance current transformer + - - Rg * * * * + dV/dt controlled by Rg Driver same type as D.U.T. ISD controlled by duty factor "D" D.U.T. - device under test + - VDD Driver gate drive P.W. Period D= P.W. Period VGS = 10 Va D.U.T. lSD waveform Reverse recovery current Body diode forward current dI/dt D.U.T. VDS waveform Diode recovery dV/dt Re-applied voltage Inductor current VDD Body diode forward drop Ripple 5 % ISD Note a. VGS = 5 V for logic level devices Fig. 14 - For N-Channel Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?91043. S14-2355-Rev. C, 08-Dec-14 Document Number: 91043 6 For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information www.vishay.com Vishay Siliconix TO-220-1 A E DIM. Q H(1) D 3 2 L(1) 1 M* L b(1) INCHES MIN. MAX. MIN. MAX. A 4.24 4.65 0.167 0.183 b 0.69 1.02 0.027 0.040 b(1) 1.14 1.78 0.045 0.070 F OP MILLIMETERS c 0.36 0.61 0.014 0.024 D 14.33 15.85 0.564 0.624 E 9.96 10.52 0.392 0.414 e 2.41 2.67 0.095 0.105 e(1) 4.88 5.28 0.192 0.208 F 1.14 1.40 0.045 0.055 H(1) 6.10 6.71 0.240 0.264 0.115 J(1) 2.41 2.92 0.095 L 13.36 14.40 0.526 0.567 L(1) 3.33 4.04 0.131 0.159 OP 3.53 3.94 0.139 0.155 Q 2.54 3.00 0.100 0.118 ECN: X15-0364-Rev. C, 14-Dec-15 DWG: 6031 Note * M* = 0.052 inches to 0.064 inches (dimension including protrusion), heatsink hole for HVM C b e J(1) e(1) Package Picture ASE Revison: 14-Dec-15 Xi'an Document Number: 66542 1 For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. (c) 2017 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED Revision: 08-Feb-17 1 Document Number: 91000