(7 0 ) E 2SB1647 Silicon PNP Epitaxial Planar Transistor (Complement to type 2SD2560) VCB=-150V -100max A V IEBO VEB=-5V -100max A V VEBO -5 V V(BR)CEO IC -15 A hFE IC=-30mA -150min VCE=-4V, IC=-10A 5000min A VCE(sat) IC=-10A, IB=-10mA -2.5max IC=-10A, IB=-10mA -3.0max V VCE=-12V, IE=2A 45typ MHz VCB=-10V, f=1MHz 320typ IB -1 PC 130(Tc=25C) W VBE(sat) Tj 150 C fT -55 to +150 C Tstg COB 15.60.4 9.6 1.8 ICBO a o3.20.1 pF 2 3 1.05 +0.2 -0.1 hFE Rank O(5000 to 12000), P(6500 to 20000), Y(15000 to 30000) 5.450.1 Typical Switching Characteristics (Common Emitter) IC (A) VBB1 (V) VBB2 (V) IB1 (mA) IB2 (mA) ton (s) tstg (s) tf (s) -40 4 10 -10 5 -10 10 0.7typ 1.6typ 1.1typ -4 -0.5 -1 Collector-Emi tter Voltage V C E (V) -10 Typ 10,000 5,000 -0.5 -1 -5 -10 -15 Collector Current I C (A) 125C 25C -30C 10000 5000 1000 -0.2 -0.5 -1 -5 -10 -15 1000 2000 P c - T a Derating 130 at si nk Ma xim um Powe r Dissipation P C ( W) 100 he 10 100 Time t(ms) ite 5 ) 10 fin Cut- off F req uency f T ( MH Z ) 1 In 54 p) 0.1 ith 1 emp 0.5 W 0.5 Emitter Current I E (A) Tem 1 60 20 -3 3 Safe Operating Area (Single Pulse) 40 -2 j-a - t Characteristics j- a ( C/W) (V C E =-4V) (V C E =-12V) 0.05 0.1 -1 Collector Current I C (A) f T - I E Characteristics (Typical) 0 0.02 0 Base-Emittor Voltage V B E (V) h FE - I C Temperature Characteristics (Typical) 50000 1,000 -0.2 0 -50 -100 -200 (V C E =-4V) DC Cur r ent Gai n h F E DC Cur r ent Gai n h F E -5 Base Current I B (mA) h FE - I C Characteristics (Typical) 50,000 -5 -30 0 -0.2 -6 I C =-5A -1 se I C =-1 0A -10 se T I C =-15A (Ca -5 -2 (V C E =-4V) (Ca I B =-0.3mA -2 -15 C -0. 5m A 0 -3 25C -0.8 mA -10 0 I C - V BE Temperature Characteristics (Typical) 125 A m -2 Collector Current I C (A) -1 .0m A 1.4 E V CE ( sa t ) - I B Characteristics (Typical) Collector Current I C (A) -1.5mA -15 C Weight : Approx 6.0g a. Type No. b. Lot No. Transient Thermal Resistance -50mA -10mA -3mA Collector-Emitter Saturation Voltage V C E (s at) (V) I C - V CE Characteristics (Typical) 0.65 +0.2 -0.1 5.450.1 B RL () 2.00.1 b V VCC (V) 4.80.2 5.00.2 -150 Unit mp) VCEO 2SB1647 e Te V External Dimensions MT-100(TO3P) (Ta=25C) Conditions Cas -150 Symbol C C ( VCBO Electrical Characteristics 2.0 Unit 4.0 2SB1647 19.90.3 Symbol 4.0max Absolute maximum ratings (Ta=25C) Equivalent circuit Application : Audio, Series Regulator and General Purpose 20.0min Darlington B 50 3.5 0 Without Heatsink 0 25 50 75 100 125 Ambient Temperature Ta(C) 150