Datasheet
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© 2013 ROHM Co., Ltd. All rights reserved.
2SB1260 / 2SB1181
PNP -1.0A -80V Middle Power Transistor
lOutline
lFeatures
1) Suitable for Middle Power Driver
2) Complementary NPN Types : 2SD1898 / 2SD1733
3) Low VCE(sat)
VCE(sat)= -0.4V Max. (IC/IB= -500mA/ -50mA)
4) Lead Free/RoHS Compliant.
lInner circuit
lApplications
Motor driver , LED driver
Power supply
lPackaging specifications
Parameter
Value
VCEO
-80V
Taping
code
Reel size
(mm)
IC
-1.0A
Basic
ordering
unit (pcs)
Marking
2,500
12
1,000
BE
B1181
180
Tape width
(mm)
2SB1181
CPT3
6595
TL
330
Part No.
Package
2SB1260
MPT3
4540
T100
16
Package
size
(mm)
Collector
Base
Emitter
Collector
Base
Emitter
Base
Emitter
Collector
2SB1260
(SC-62)
<SOT-89>
2SB1181
(SC-63)
<SOT-428>
1/7
2013.07 - Rev.H
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© 2013 ROHM Co., Ltd. All rights reserved.
Data Sheet
2SB1260 / 2SB1181
lAbsolute maximum ratings (Ta = 25°C)
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
DC
Pulsed
Junction temperature
Range of storage temperature
*1 Pw=20ms , duty=1/2
*2 Each terminal mounted on a reference land
*3 Mounted on a ceramic board (40×40×0.7 mm)
*4 Mounted on a substrate
*5 TC=25°C
lElectrical characteristics (Ta = 25°C)
*6 2SB1260
*7 2SB1181
lhFE rank categories
hFE
Rank
Transition frequency
DC current gain
Collector-emitter
saturation voltage
Emitter cut-off current
Collector cut-off current
Emitter-base
breakdown voltage
Collector-base
breakdown voltage
Output capacitance
Q
pF
25 *7
Cob
VCB = -10V, IE = 0A
f = 1MHz
20 *6
pF
R
120 to 270
180 to 390
-
Conditions
Typ.
Symbol
VCE(sat)
IC = -1A, IB = -50mA
IC = -50mA
-
Parameter
Symbol
Values
Unit
VCBO
-80
V
VCEO
-80
V
°C
Tstg
-55 to +150
°C
VEBO
-5
V
PD
IC
-1.0
W
W
A
ICP
*1
-2.0
A
Tj
150
Collector current
Power dissipation
0.5 *2
2.0 *3
1 *4
10 *5
2SB1260
2SB1181
Collector-emitter
breakdown voltage
Parameter
Unit
BVCEO
IC = -1mA
V
-
mA
IEBO
VEB = -4V
-
mA
ICBO
VCB = -60V
-
V
BVEBO
IE = -50mA
-
V
BVCBO
MHz
fT
VCE = -10V, IE = 50mA
f=100MHZ
100
V
hFE
VCE = -3V, IC = -0.1A
-
-
2/7
2013.07 - Rev.H
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© 2013 ROHM Co., Ltd. All rights reserved.
Data Sheet
2SB1260 / 2SB1181
lElectrical characteristic curves(Ta = 25°C)
-0.1
-1
-10
-100
-1000
-0 -0.5 -1 -1.5
VCE= -5V
Pulsed
Ta=85ºC
25ºC
-40ºC
10
100
1000
-1 -10 -100 -1000 -10000
Ta=85ºC
25ºC
-40ºC
VCE= -3V
10
100
1000
-1 -10 -100 -1000 -10000
VCE= -3V
-1V
Ta=25ºC
Fig.1 Ground Emitter Propagation Characteristics
COLLECTOR CURRENT : IC [mA]
BASE TO EMITTER VOLTAGE : VBE [V]
Fig.2 Typical Output Characteristics
COLLECTOR CURRENT : IC [A]
COLECTOR TO EMITTE VOLTAGE : VCE [V]
Fig.3 DC Current Gain vs. Collector Current(I)
DC CURRENT GAIN : hFE
COLLECTOR CURRENT : IC [mA]
Fig.4 DC Current Gain vs. Collector Current(II)
DC CURRENT GAIN : hFE
COLLECTOR CURRENT : IC [mA]
3/7
2013.07 - Rev.H
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© 2013 ROHM Co., Ltd. All rights reserved.
Data Sheet
2SB1260 / 2SB1181
lElectrical characteristic curves(Ta = 25°C)
-0.1
-1
-10
-1 -10 -100 -1000 -10000
Ta= -40ºC
25ºC
85ºC
IC / IB = 10
-0.01
-0.1
-1
-1 -10 -100 -1000 -10000
Ta=85ºC
25ºC
-40ºC
IC / IB = 10
-0.01
-0.1
-1
-1 -10 -100 -1000 -10000
Ta=25ºC
Fig.5 Collector-Emitter Saturation Voltage
vs. Collector Current (I)
COLLECTOR-EMITTER
SATURATION VOLTAGE : VCE(sat) [V]
COLLECTOR CURRENT : IC [mA]
Fig.6 Collector-Emitter Saturation Voltage
vs. Collector Current (II)
COLLECTOR-EMITTER
SATURATION VOLTAGE : VCE(sat) [V]
COLLECTOR CURRENT : IC [mA]
Fig.7 Base-Emitter Saturation Voltage
vs. Collector Current
BASE-EMITTER
SATURATION VOLTAGE : VBE(sat) [V]
COLLECTOR CURRENT : IC [mA]
Fig.8 Gain Bandwidth Product
vs. Emitter Current
TRANSITION FREQUENCY : fT [MHz]
EMITTER CURRENT :IE [mA]
IC / IB =20/1
10/1
4/7
2013.07 - Rev.H
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© 2013 ROHM Co., Ltd. All rights reserved.
Data Sheet
2SB1260 / 2SB1181
lElectrical characteristic curves(Ta = 25°C)
-0.001
-0.01
-0.1
-1
-10
-0.1 -1 -10 -100
Ta=25ºC
Single non repetitive pulse
DC
(Mounted on a
reference land)
10ms
1ms
100ms
-0.001
-0.01
-0.1
-1
-10
-0.1 -1 -10 -100
Ta=25ºC
Single non repetitive pulse
2SB1181
10ms
DC
100ms
Fig.9 Collector output capacitance vs.
Collector-Base Voltage
COLLECTOR OUTPUT CAPACITANCE : Cob [pF]
COLLECTOR - BASE VOLTAGE : VCB [V]
Fig.10 Safe Operating Area
COLLECTOR CURRENT : IC [A]
COLLECTOR TO EMITTER VOLTAGE : VCE [V]
Fig.11 Safe Operating Area
COLLECTOR CURRENT : IC [A]
COLLECTOR TO EMITTER VOLTAGE : VCE [V]
2SB1260
5/7
2013.07 - Rev.H
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© 2013 ROHM Co., Ltd. All rights reserved.
Data Sheet
2SB1260 / 2SB1181
lDimensions (Unit : mm)
Dimension in mm / inches
MPT3
L E
HE
E
b1
DA
b
x S A e1
b2
e
c
yS
A
Lp
b3
b5
l1
b4
l2 l3
β
e1
e
S
Pattern of terminal position areas
[Not a recommended pattern of soldering pads]
MIN MAX MIN MAX
A1.40 1.50 0.055 0.059
b0.30 0.50 0.012 0.020
b1 1.50 1.70 0.059 0.067
b2 0.40 0.60 0.016 0.024
c0.35 0.50 0.014 0.020
D4.40 4.70 0.173 0.185
E2.40 2.70 0.094 0.106
e
e1
HE3.70 4.30 0.146 0.169
LE0.80 1.20 0.031 0.047
Lp 1.01 1.41 0.040 0.056
x- 0.15 - 0.006
y- 0.10 - 0.004
MIN MAX MIN MAX
b3 - 0.65 - 0.026
b4 - 1.70 - 0.067
b5 - 0.75 - 0.030
l1 - 1.71 - 0.067
l2 - 0.58 - 0.023
l3 - 3.72 - 0.146
β
45°
45°
DIM
MILIMETERS
INCHES
3.00
0.118
1.50
0.059
DIM
MILIMETERS
INCHES
6/7
2013.07 - Rev.H
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© 2013 ROHM Co., Ltd. All rights reserved.
Data Sheet
2SB1260 / 2SB1181
lDimensions (Unit : mm)
Dimension in mm / inches
CPT3
D
b1
eb
b3
b2
L3
A2
H
A1
A3
c
L1
Lp
x B A
L E L2
l3
l2 l1
b6
b5e
L4
c1
B
A
Pattern of terminal position areas
[Not a recommended pattern of soldering pads]
MIN MAX MIN MAX
A1 0.00 0.15 0.000 0.006
A2 2.20 2.50 0.087 0.098
A3
b0.55 0.75 0.022 0.030
b1 5.00 5.30 0.197 0.209
b2
b3
c0.40 0.60 0.016 0.024
c1 0.40 0.60 0.016 0.024
D6.30 6.70 0.248 0.264
E5.40 5.80 0.213 0.228
e
HE9.00 10.00 0.354 0.394
L2.20 2.80 0.087 0.110
L1 0.80 1.40 0.031 0.055
L2 1.20 1.80 0.047 0.071
L3
L4
Lp 1.00 1.60 0.039 0.063
x- 0.25 - 0.010
MIN MAX MIN MAX
b5 - 1.00 - 0.04
b6 - 5.20 - 0.205
ｌ1 - 2.50 - 0.098
ｌ2 - 5.50 - 0.217
ｌ3 - 10.00 - 0.394
5.30
0.209
0.90
0.035
DIM
MILIMETERS
INCHES
5.00
0.197
0.75
0.030
2.30
0.091
DIM
MILIMETERS
INCHES
0.25
0.010
7/7
2013.07 - Rev.H
R1102
A
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© 2013 ROHM Co., Ltd. All rights reserved.
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