© Semiconductor Components Industries, LLC, 2019
May, 2019 − Rev. 0
1Publication Order Number:
ISL9V3040D3STV/D
ISL9V3040D3STV
ECOSPARK) Ignition IGBT
300 mJ, 400 V, N−Channel Ignition IGBT
Features
•SCIS Energy = 300 mJ at TJ = 25°C
•Logic Level Gate Drive
•This Device is Pb−Free and is RoHS Compliant
•AEC−Q101 Qualified and PPAP Capable
Applications
•Automotive Ignition Coil Driver Circuits
•High Current Ignition System
•Coil on Plug Applications
MAXIMUM RATINGS (TJ = 25°C Unless Otherwise Stated)
Parameter Symbol Value Units
Collector to Emitter Breakdown Voltage
(IC = 1 mA)
BVCER 400 V
Emitter to Collector Voltage
− Reverse Battery Condition (IC = 10 mA)
BVECS 24 V
ISCIS = 14.2 A, L = 3.0 mHz,
RGE = 1 K (Note 1), TC = 25°C
ESCIS25 300 mJ
ISCIS = 10.6 A, L = 3.0 mHz,
RGE = 1 K (Note 2), TC = 150°C
ESCIS150 170 mJ
Collector Current Continuous,
at VGE = 4.0 V, TC = 25°C
IC25 21 A
Collector Current Continuous,
at VGE = 4.0 V, TC = 110°C
IC110 17 A
Gate to Emitter Voltage Continuous VGEM ±10 V
Power Dissipation Total, TC = 25°C PD 150 W
Power Dissipation Derating, TC 25°CPD 1 W/°C
Operating Junction and Storage
Temperature
TJ, TSTG −55 to
175
°C
Lead Temperature for Soldering Purposes
(1/8” from case for 10 s)
TL300 °C
Reflow soldering according to JESD020C TPKG 260 °C
HBM−Electrostatic Discharge Voltage
at100 pF, 1500
ESD 4 kV
CDM−Electrostatic Discharge Voltage at
1
ESD 2 kV
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. Self Clamped inductive Switching Energy (ESCIS25) of 300 mJ is based on
the test conditions that is starting TJ = 25°C, L = 3 mHz, ISCIS = 14.2 A,
VCC = 100 V during inductor charging and VCC = 0 V during time in clamp.
2. Self Clamped inductive Switching Energy (ESCIS150) of 170 mJ is based on
the test conditions that is starting TJ = 150°C, L = 3 mHz, ISCIS = 10.6 A,
VCC = 100 V during inductor charging and VCC = 0 V during time in clamp.
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3
4
AYWW
MARKING DIAGRAM
DPAK (SINGLE GAUGE)
CASE 369C
ISL3040DG = Device Code
A = Assembly Location
Y = Year
WW = Work Week
G = Pb−Free Package
3040DG
ISL
ON
See detailed ordering and shipping information on page 2 of
this data sheet.
ORDERING INFORMATION
ISL9V3040D3STV
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2
THERMAL RESISTANCE RATINGS
Characteristic Symbol Max Units
Junction−to−Case – Steady State (Drain) (Notes 1, 3 and 4) RJC 1°C/W
ELECTRICAL CHARACTERISTICS (TJ = 25°C Unless Otherwise Specified)
Parameter Symbol Test Condition Min Typ Max Unit
OFF CHARACTERISTICS
Collector to Emitter Breakdown Voltage BVCER ICE = 2 mA, VGE = 0 V,
RGE = 1 K
TJ = −40 to 150°C
370 400 430 V
Collector to Emitter Breakdown Voltage BVCES ICE = 10 mA, VGE = 0 V,
RGE = 0,
TJ = −40 to 150°C
390 420 450 V
Emitter to Collector Breakdown Voltage BVECS ICE = −75 mA, VGE = 0 V,
TJ = 25°C
30 − − V
Gate to Emitter Breakdown Voltage BVGES IGES = ±2 mA ±12 ±14 −V
Collector to Emitter Leakage Current ICER VCE = 175 V,
RGE = 1 K
TJ = 25°C− − 25 A
TJ = 150°C− − 1 mA
Emitter to Collector Leakage Current IECS VEC = 24 V TJ = 25°C− − 1mA
TJ = 150°C− − 40
Series Gate Resistance R1−70 −
Gate to Emitter Resistance R210 K −26 K
ON CHARACTERISTICS
Collector to Emitter Saturation Voltage VCE(SAT) ICE = 6 A, VGE = 4 V
TJ = 25°C
−1.25 1.65 V
Collector to Emitter Saturation Voltage VCE(SAT) ICE = 10 A, VGE = 4.5 V
TJ = 150°C
−1.58 1.80 V
Collector to Emitter Saturation Voltage VCE(SAT) ICE = 15 A, VGE = 4.5 V
TJ = 150°C
−1.90 2.20 V
DYNAMIC CHARACTERISTICS
Gate Charge QG(ON) ICE = 10 A, VCE = 12 V, VGE = 5 V −17 −nC
Gate to Emitter Threshold Voltage VGE(TH) ICE = 1 mA,
VCE = VGE
TJ = 25°C 1.3 −2.2 V
TJ = 150°C 0.75 −1.8
Gate to Emitter Plateau Voltage VGEP VCE = 12 V, ICE = 10 A −3.0 −V
SWITCHING CHARACTERISTICS
Current Turn−On Delay Time−Resistive td(ON)R VCE = 14 V, RL = 1
VGE = 5 V, RG = 470
TJ = 25°C
−0.7 4 s
Current Rise Time−Resistive trR −2.1 7
Current Turn−Off Delay Time−Inductive td(OFF)L VCE = 300 V, L = 1 mH,
VGE = 5 V, RG = 470
ICE = 6.5 A, TJ = 25°C
−4.8 15
Current Fall Time−Inductive tfL −2.8 15
PACKAGE MARKING AND ORDERING INFORMATION
Device Marking Device Package Reel Diameter Tape Width Qty
ISL9V3040G1 ISL9V3040D3STV DPAK
(Pb−Free)
330 mm 16 mm 2500
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
ISL9V3040D3STV
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TYPICAL CHARACTERISTICS
Figure 1. Self Clamped Inductive Switching
Current vs. Time in Clamp
Figure 2. Self Clamped Inductive Switching
Current vs. Inductance
Figure 3. Collector to Emitter On−State Voltage
vs. Junction Temperature
Figure 4. Collector to Emitter On−State Voltage
vs. Junction Temperature
Figure 5. Collector to Emitter On−State Voltage
vs. Collector Current
Figure 6. Collector to Emitter On− State Voltage
vs. Collector Current
ISL9V3040D3STV
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TYPICAL CHARACTERISTICS (continued)
Figure 7. Collector to Emitter On−State Voltage
vs. Collector Current
Figure 8. Transfer Characteristics
Figure 9. DC Collector Current vs. Case
Temperature
Figure 10. Gate Charge
Figure 11. Threshold Voltage vs. Junction
Temperature
Figure 12. Leakage Current vs. Junction
Temperature
DPAK (SINGLE GAUGE)
CASE 369C
ISSUE F
DATE 21 JUL 2015
SCALE 1:1
STYLE 1:
PIN 1. BASE
2. COLLECTOR
3. EMITTER
4. COLLECTOR
STYLE 2:
PIN 1. GATE
2. DRAIN
3. SOURCE
4. DRAIN
STYLE 3:
PIN 1. ANODE
2. CATHODE
3. ANODE
4. CATHODE
STYLE 4:
PIN 1. CATHODE
2. ANODE
3. GATE
4. ANODE
STYLE 5:
PIN 1. GATE
2. ANODE
3. CATHODE
4. ANODE
STYLE 6:
PIN 1. MT1
2. MT2
3. GATE
4. MT2
STYLE 7:
PIN 1. GATE
2. COLLECTOR
3. EMITTER
4. COLLECTOR
12
3
4
STYLE 8:
PIN 1. N/C
2. CATHODE
3. ANODE
4. CATHODE
STYLE 9:
PIN 1. ANODE
2. CATHODE
3. RESISTOR ADJUST
4. CATHODE
STYLE 10:
PIN 1. CATHODE
2. ANODE
3. CATHODE
4. ANODE
b
D
E
b3
L3
L4
b2
M
0.005 (0.13) C
c2
A
c
C
Z
DIM MIN MAX MIN MAX
MILLIMETERSINCHES
D0.235 0.245 5.97 6.22
E0.250 0.265 6.35 6.73
A0.086 0.094 2.18 2.38
b0.025 0.035 0.63 0.89
c2 0.018 0.024 0.46 0.61
b2 0.028 0.045 0.72 1.14
c0.018 0.024 0.46 0.61
e0.090 BSC 2.29 BSC
b3 0.180 0.215 4.57 5.46
L4 −−− 0.040 −−− 1.01
L0.055 0.070 1.40 1.78
L3 0.035 0.050 0.89 1.27
Z0.155 −−− 3.93 −−−
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME
Y14.5M, 1994.
2. CONTROLLING DIMENSION: INCHES.
3. THERMAL PAD CONTOUR OPTIONAL WITHIN DI-
MENSIONS b3, L3 and Z.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD
FLASH, PROTRUSIONS, OR BURRS. MOLD
FLASH, PROTRUSIONS, OR GATE BURRS SHALL
NOT EXCEED 0.006 INCHES PER SIDE.
5. DIMENSIONS D AND E ARE DETERMINED AT THE
OUTERMOST EXTREMES OF THE PLASTIC BODY.
6. DATUMS A AND B ARE DETERMINED AT DATUM
PLANE H.
7. OPTIONAL MOLD FEATURE.
12 3
4
XXXXXX = Device Code
A = Assembly Location
L = Wafer Lot
Y = Year
WW = Work Week
G = Pb−Free Package
AYWW
XXX
XXXXXG
XXXXXXG
ALYWW
DiscreteIC
5.80
0.228
2.58
0.102
1.60
0.063
6.20
0.244
3.00
0.118
6.17
0.243
ǒmm
inchesǓ
SCALE 3:1
GENERIC
MARKING DIAGRAM*
*This information is generic. Please refer
to device data sheet for actual part
marking.
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
SOLDERING FOOTPRINT*
H0.370 0.410 9.40 10.41
A1 0.000 0.005 0.00 0.13
L1 0.114 REF 2.90 REF
L2 0.020 BSC 0.51 BSC
A1
H
DETAIL A
SEATING
PLANE
A
B
C
L1
L
H
L2 GAUGE
PLANE
DETAIL A
ROTATED 90 CW5
e
BOTTOM VIEW
Z
BOTTOM VIEW
SIDE VIEW
TOP VIEW
ALTERNATE
CONSTRUCTIONS
NOTE 7
Z
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
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DPAK (SINGLE GAUGE)
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ISL9V3040D3STV/D
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