Characteristics STPS15L45C-Y
2/8 Doc ID018565 Rev 2
1 Characteristics
When the diodes 1 and 2 are used simultaneously:
∆Tj(diode 1) = P(diode 1) x Rth(j-c)(Per diode) + P(diode 2) x Rth(c)
Table 2. Absolute Ratings (limiting values)
Symbol Parameter Value Unit
VRRM Repetitive peak reverse voltage 45 V
IF(RMS) Forward rms voltage 10 A
IF(AV) Average forward current Tc = 140 °C
δ = 0.5
Per diode
Per device
7.5
15 A
IFSM Surge non repetitive forward current tp = 10 ms sinusoidal 75 A
IRRM Peak repetitive reverse current tp = 2 µs square
F = 1 kHz 1A
PARM Repetitive peak avalanche power tp = 10 µs Tj = 125 °C 266 W
Tstg Storage temperature range -65 to
+175 °C
TjMaximum operating junction temperature range(1)
1. condition to avoid thermal runaway for a diode on its own heatsink
-40 to
+150 °C
dV/dt Critical rate of rise of reverse voltage 10000 V/µs
Table 3. Thermal resistance
Symbol Parameter Value Unit
Rth(j-c) Junction to case Per diode
Tota l
4
2.4 °C/W
Rth(c) Coupling 0.7
Table 4. Static electrical characteristics
Symbol Parameter Test condi tions Min. Typ. Max. Unit
IR(1) Reverse leakage current
Tj = 25 °C
VR = VRRM
-1mA
Tj = 125 °C - 23 45 mA