DATA SH EET
Product specification
Supersedes data of 2001 Jan 26 2001 Sep 21
DISCRETE SEMICONDUCTORS
PBSS5540Z
40 V low VCEsat PNP transistor
a
ge
M3D087
2001 Sep 21 2
Philips Semiconductors Product specification
40 V low VCEsat PNP transistor PBSS5540Z
FEATURES
Low collector-emitter saturation voltage
High current capability
Improved device reliability due to reduced heat
generation.
APPLICATIONS
Supply line switching circuits
Battery management applications
DC/DC converter applications
Strobe flash units
Heavydutybatterypoweredequipment(motorandlamp
drivers)
MOSFET driver applications.
DESCRIPTION
PNP low VCEsat transistor in a SOT223 plastic package.
NPN complement: PBSS4540Z.
MARKING
TYPE NUMBER MARKING CODE
PBSS5540Z PB5540
PINNING
PIN DESCRIPTION
1 base
2 collector
3 emitter
4 collector
handbook, halfpage
4
123
MAM288
Top view
3
2, 4
1
Fig.1 Simplified outline (SOT223) and symbol.
QUICK REFERENCE DATA
SYMBOL PARAMETER MAX UNIT
VCEO emitter-collector voltage 40 V
ICcollector current (DC) 5A
I
CM peak collector current 10 A
RCEsat equivalent on-resistance <80 m
2001 Sep 21 3
Philips Semiconductors Product specification
40 V low VCEsat PNP transistor PBSS5540Z
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
Notes
1. Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 1 cm2.
2. Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 6 cm2.
For other mounting conditions, see
“Thermal considerations for SOT223 in the General Part of associated
Handbook”
.
THERMAL CHARACTERISTICS
Note
1. Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 1 cm2.
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VCBO collector-base voltage open emitter −−40 V
VCEO collector-emitter voltage open base −−40 V
VEBO emitter-base voltage open collector −−6V
I
Ccollector current (DC) −−5A
I
CM peak collector current −−10 A
IBM peak base current −−2A
P
tot total power dissipation Tamb 25 °C; note 1 1.35 W
Tamb 25 °C; note 2 2W
T
stg storage temperature 65 +150 °C
Tjjunction temperature 150 °C
Tamb operating ambient temperature 65 +150 °C
SYMBOL PARAMETER CONDITIONS VALUE UNIT
Rth j-a thermal resistance from junction to
ambient in free air; note 1 92 K/W
2001 Sep 21 4
Philips Semiconductors Product specification
40 V low VCEsat PNP transistor PBSS5540Z
CHARACTERISTICS
Tamb =25°C unless otherwise specified.
Note
1. Pulse test: tp300 µs; δ≤0.02.
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
ICBO collector-base cut-off current VCB =30 V; IE=0 −−−100 nA
VCB =30 V; IE= 0; Tj= 150 °C−−−50 µA
IEBO emitter-base cut-off current VEB =5 V; IC=0 −−−100 nA
hFE DC current gain VCE =2 V; IC=500 mA 250 350
VCE =2 V; IC=1 A; note 1 200 300
VCE =2 V; IC=2 A; note 1 150 250
VCE =2 V; IC=5 A; note 1 50 150
VCEsat collector-emitter saturation voltage IC=500 mA; IB=5mA −−80 120 mV
IC=1 A; IB=10 mA −−120 170 mV
IC=2 A; IB=200 mA −−110 160 mV
RCEsat equivalent on-resistance IC=2 A; IB=200 mA; note 1 <55 <80 m
VCEsat collector-emitter saturation voltage IC=5 A; IB=500 mA −−250 375 mV
VBEsat base-emitter saturation voltage IC=5 A; IB=500 mA −−−1.3 V
VBEon base-emitter turn-on voltage VCE =2 V; IC=2A −−0.8 1.25 V
fTtransition frequency IC=100 mA; VCE =10 V;
f = 100 MHz 60 120 MHz
Cccollector capacitance VCB =10 V; IE=I
e=0;
f = 1 MHz 90 105 pF
2001 Sep 21 5
Philips Semiconductors Product specification
40 V low VCEsat PNP transistor PBSS5540Z
handbook, halfpage
0
1000
200
400
600
800
MGU391
1
hFE
IC (mA)
10 102103104
(1)
(2)
(3)
Fig.2 DC current gain as a function of collector
current; typical values.
VCE =2V.
(1) Tamb = 150 °C.
(2) Tamb =25°C.
(3) Tamb =55 °C.
handbook, halfpage
0
1.2
0.4
0.8
MGU393
101110 102103104
IC (mA)
VBE
(V)
(1)
(2)
(3)
Fig.3 Base-emitter voltage as a function of
collector current; typical values.
VCE =2V.
(1) Tamb = 150 °C.
(2) Tamb =25°C.
(3) Tamb =55 °C.
handbook, halfpage
103
102
10
1
101
MGU395
110 IC (mA)
VCEsat
(mV)
102103104
(1)
(3)
(2)
Fig.4 Collector-emitter saturation voltage as a
function of collector current; typical values.
IC/IB= 20.
(1) Tamb = 150 °C.
(2) Tamb =25°C.
(3) Tamb =55 °C.
handbook, halfpage
0
1.2
0.4
0.8
MGU394
101110 102103104
IC (mA)
VBEsat
(V)
(1)
(2)
(3)
Fig.5 Base-emitter saturation voltage as a
function of collector current; typical values.
IC/IB= 20.
(1) Tamb = 150 °C.
(2) Tamb =25°C.
(3) Tamb =55 °C.
2001 Sep 21 6
Philips Semiconductors Product specification
40 V low VCEsat PNP transistor PBSS5540Z
handbook, halfpage
0
IC
(A)
VCE (V)
2
10
0
2
4
6
8
0.4 0.8 1.2 1.6
MGU392
(10)
(9)
(8)
(7)
(6)
(5)
(4)
(3)
(2)
(1)
Fig.6 Collector current as a function of
collector-emitter voltage; typical values.
(1) IB=150 mA.
(2) IB=135 mA.
(3) IB=120 mA.
(4) IB=105 mA.
(5) IB=90 mA.
(6) IB=75 mA.
(7) IB=60 mA.
(8) IB=45 mA.
(9) IB=30 mA.
(10) IB=15 mA.
Tamb =25°C.
handbook, halfpage
103
102
10
1
101
101
MGU396
110 IC (mA)
RCEsat
()
102103104
(1)
(3) (2)
Fig.7 Collector-emitter equivalent on-resistance
as a function of collector current; typical
values.
IC/IB= 20.
(1) Tamb = 150 °C.
(2) Tamb =25°C.
(3) Tamb =55 °C.
2001 Sep 21 7
Philips Semiconductors Product specification
40 V low VCEsat PNP transistor PBSS5540Z
PACKAGE OUTLINE
UNIT A1bpcDEe
1H
EL
pQywv
REFERENCES
OUTLINE
VERSION EUROPEAN
PROJECTION ISSUE DATE
IEC JEDEC EIAJ
mm 0.10
0.01
1.8
1.5 0.80
0.60
b1
3.1
2.9 0.32
0.22 6.7
6.3 3.7
3.3 2.3
e
4.6 7.3
6.7 1.1
0.7 0.95
0.85 0.1 0.10.2
DIMENSIONS (mm are the original dimensions)
SOT223 SC-73 97-02-28
99-09-13
wM
bp
D
b1
e1
e
A
A1
Lp
Q
detail X
HE
E
vMA
AB
B
c
y
0 2 4 mm
scale
A
X
132
4
Plastic surface mounted package; collector pad for good heat transfer; 4 leads SOT223
2001 Sep 21 8
Philips Semiconductors Product specification
40 V low VCEsat PNP transistor PBSS5540Z
DATA SHEET STATUS
Notes
1. Please consult the most recently issued data sheet before initiating or completing a design.
2. The product status of the device(s) described in this data sheet may have changed since this data sheet was
published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com.
DATA SHEET STATUS(1) PRODUCT
STATUS(2) DEFINITIONS
Objective data Development This data sheet contains data from the objective specification for product
development. Philips Semiconductors reserves the right to change the
specification in any manner without notice.
Preliminary data Qualification This data sheet contains data from the preliminary specification.
Supplementary data will be published at a later date. Philips
Semiconductors reserves the right to change the specification without
notice, in order to improve the design and supply the best possible
product.
Product data Production This data sheet contains data from the product specification. Philips
Semiconductors reserves the right to make changes at any time in order
to improve the design, manufacturing and supply. Changes will be
communicated according to the Customer Product/Process Change
Notification (CPCN) procedure SNW-SQ-650A.
DEFINITIONS
Short-form specification The data in a short-form
specification is extracted from a full data sheet with the
same type number and title. For detailed information see
the relevant data sheet or data handbook.
Limiting values definition Limiting values given are in
accordance with the Absolute Maximum Rating System
(IEC 60134). Stress above one or more of the limiting
values may cause permanent damage to the device.
These are stress ratings only and operation of the device
attheseor atanyother conditionsabovethose giveninthe
Characteristics sections of the specification is not implied.
Exposure to limiting values for extended periods may
affect device reliability.
Application information Applications that are
described herein for any of these products are for
illustrative purposes only. Philips Semiconductors make
norepresentationorwarrantythatsuch applicationswillbe
suitable for the specified use without further testing or
modification.
DISCLAIMERS
Life support applications These products are not
designed for use in life support appliances, devices, or
systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips
Semiconductorscustomersusingorsellingtheseproducts
for use in such applications do so at their own risk and
agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.
Right to make changes Philips Semiconductors
reserves the right to make changes, without notice, in the
products, including circuits, standard cells, and/or
software, described or contained herein in order to
improve design and/or performance. Philips
Semiconductors assumes no responsibility or liability for
theuseofany oftheseproducts,conveys no licenceortitle
under any patent, copyright, or mask work right to these
products,and makesnorepresentations orwarranties that
these products are free from patent, copyright, or mask
work right infringement, unless otherwise specified.
2001 Sep 21 9
Philips Semiconductors Product specification
40 V low VCEsat PNP transistor PBSS5540Z
NOTES
2001 Sep 21 10
Philips Semiconductors Product specification
40 V low VCEsat PNP transistor PBSS5540Z
NOTES
2001 Sep 21 11
Philips Semiconductors Product specification
40 V low VCEsat PNP transistor PBSS5540Z
NOTES
© Koninklijke Philips Electronics N.V. 2001 SCA73
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Printed in The Netherlands 613514/04/pp12 Date of release: 2001 Sep 21 Document order number: 9397 750 08434