PBSS5540ZTRL - NXP - Datasheet.Directory

DATA SH EET

Product speciﬁcation

Supersedes data of 2001 Jan 26 2001 Sep 21

DISCRETE SEMICONDUCTORS

PBSS5540Z

40 V low VCEsat PNP transistor

M3D087

2001 Sep 21 2

Philips Semiconductors Product speciﬁcation

40 V low VCEsat PNP transistor PBSS5540Z

FEATURES

•Low collector-emitter saturation voltage

•High current capability

•Improved device reliability due to reduced heat

generation.

APPLICATIONS

•Supply line switching circuits

•Battery management applications

•DC/DC converter applications

•Strobe flash units

•Heavydutybatterypoweredequipment(motorandlamp

drivers)

•MOSFET driver applications.

DESCRIPTION

PNP low VCEsat transistor in a SOT223 plastic package.

NPN complement: PBSS4540Z.

MARKING

TYPE NUMBER MARKING CODE

PBSS5540Z PB5540

PINNING

PIN DESCRIPTION

1 base

2 collector

3 emitter

4 collector

handbook, halfpage

123

MAM288

Top view

2, 4

Fig.1 Simplified outline (SOT223) and symbol.

QUICK REFERENCE DATA

SYMBOL PARAMETER MAX UNIT

VCEO emitter-collector voltage −40 V

ICcollector current (DC) −5A

CM peak collector current −10 A

RCEsat equivalent on-resistance <80 mΩ

2001 Sep 21 3

Philips Semiconductors Product speciﬁcation

40 V low VCEsat PNP transistor PBSS5540Z

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 60134).

Notes

1. Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 1 cm2.

2. Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 6 cm2.

For other mounting conditions, see

“Thermal considerations for SOT223 in the General Part of associated

Handbook”

THERMAL CHARACTERISTICS

Note

1. Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 1 cm2.

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

VCBO collector-base voltage open emitter −−40 V

VCEO collector-emitter voltage open base −−40 V

VEBO emitter-base voltage open collector −−6V

Ccollector current (DC) −−5A

CM peak collector current −−10 A

IBM peak base current −−2A

tot total power dissipation Tamb ≤25 °C; note 1 −1.35 W

Tamb ≤25 °C; note 2 −2W

stg storage temperature −65 +150 °C

Tjjunction temperature −150 °C

Tamb operating ambient temperature −65 +150 °C

SYMBOL PARAMETER CONDITIONS VALUE UNIT

Rth j-a thermal resistance from junction to

ambient in free air; note 1 92 K/W

2001 Sep 21 4

Philips Semiconductors Product speciﬁcation

40 V low VCEsat PNP transistor PBSS5540Z

CHARACTERISTICS

Tamb =25°C unless otherwise speciﬁed.

Note

1. Pulse test: tp≤300 µs; δ≤0.02.

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

ICBO collector-base cut-off current VCB =−30 V; IE=0 −−−100 nA

VCB =−30 V; IE= 0; Tj= 150 °C−−−50 µA

IEBO emitter-base cut-off current VEB =−5 V; IC=0 −−−100 nA

hFE DC current gain VCE =−2 V; IC=−500 mA 250 350 −

VCE =−2 V; IC=−1 A; note 1 200 300 −

VCE =−2 V; IC=−2 A; note 1 150 250 −

VCE =−2 V; IC=−5 A; note 1 50 150 −

VCEsat collector-emitter saturation voltage IC=−500 mA; IB=−5mA −−80 −120 mV

IC=−1 A; IB=−10 mA −−120 −170 mV

IC=−2 A; IB=−200 mA −−110 −160 mV

RCEsat equivalent on-resistance IC=−2 A; IB=−200 mA; note 1 −<55 <80 mΩ

VCEsat collector-emitter saturation voltage IC=−5 A; IB=−500 mA −−250 −375 mV

VBEsat base-emitter saturation voltage IC=−5 A; IB=−500 mA −−−1.3 V

VBEon base-emitter turn-on voltage VCE =−2 V; IC=−2A −−0.8 −1.25 V

fTtransition frequency IC=−100 mA; VCE =−10 V;

f = 100 MHz 60 120 −MHz

Cccollector capacitance VCB =−10 V; IE=I

e=0;

f = 1 MHz −90 105 pF

2001 Sep 21 5

Philips Semiconductors Product speciﬁcation

40 V low VCEsat PNP transistor PBSS5540Z

handbook, halfpage

1000

200

400

600

800

MGU391

−1

hFE

IC (mA)

−10 −102−103−104

(1)

(2)

(3)

Fig.2 DC current gain as a function of collector

current; typical values.

VCE =−2V.

(1) Tamb = 150 °C.

(2) Tamb =25°C.

(3) Tamb =−55 °C.

handbook, halfpage

−1.2

−0.4

−0.8

MGU393

−10−1−1−10 −102−103−104

IC (mA)

VBE

(V)

(1)

(2)

(3)

Fig.3 Base-emitter voltage as a function of

collector current; typical values.

VCE =−2V.

(1) Tamb = 150 °C.

(2) Tamb =25°C.

(3) Tamb =−55 °C.

handbook, halfpage

−103

−102

−10

−1

−10−1

MGU395

−1−10 IC (mA)

VCEsat

(mV)

−102−103−104

(1)

(3)

(2)

Fig.4 Collector-emitter saturation voltage as a

function of collector current; typical values.

IC/IB= 20.

(1) Tamb = 150 °C.

(2) Tamb =25°C.

(3) Tamb =−55 °C.

handbook, halfpage

−1.2

−0.4

−0.8

MGU394

−10−1−1−10 −102−103−104

IC (mA)

VBEsat

(V)

(1)

(2)

(3)

Fig.5 Base-emitter saturation voltage as a

function of collector current; typical values.

IC/IB= 20.

(1) Tamb = 150 °C.

(2) Tamb =25°C.

(3) Tamb =−55 °C.

2001 Sep 21 6

Philips Semiconductors Product speciﬁcation

40 V low VCEsat PNP transistor PBSS5540Z

handbook, halfpage

(A)

VCE (V)

−2

−10

−2

−4

−6

−8

−0.4 −0.8 −1.2 −1.6

MGU392

(10)

(9)

(8)

(7)

(6)

(5)

(4)

(3)

(2)

(1)

Fig.6 Collector current as a function of

collector-emitter voltage; typical values.

(1) IB=−150 mA.

(2) IB=−135 mA.

(3) IB=−120 mA.

(4) IB=−105 mA.

(5) IB=−90 mA.

(6) IB=−75 mA.

(7) IB=−60 mA.

(8) IB=−45 mA.

(9) IB=−30 mA.

(10) IB=−15 mA.

Tamb =25°C.

handbook, halfpage

103

102

10−1

−10−1

MGU396

−1−10 IC (mA)

RCEsat

(Ω)

−102−103−104

(1)

(3) (2)

Fig.7 Collector-emitter equivalent on-resistance

as a function of collector current; typical

values.

IC/IB= 20.

(1) Tamb = 150 °C.

(2) Tamb =25°C.

(3) Tamb =−55 °C.

2001 Sep 21 7

Philips Semiconductors Product speciﬁcation

40 V low VCEsat PNP transistor PBSS5540Z

PACKAGE OUTLINE

UNIT A1bpcDEe

pQywv

REFERENCES

OUTLINE

VERSION EUROPEAN

PROJECTION ISSUE DATE

IEC JEDEC EIAJ

mm 0.10

0.01

1.8

1.5 0.80

0.60

3.1

2.9 0.32

0.22 6.7

6.3 3.7

3.3 2.3

4.6 7.3

6.7 1.1

0.7 0.95

0.85 0.1 0.10.2

DIMENSIONS (mm are the original dimensions)

SOT223 SC-73 97-02-28

99-09-13

detail X

vMA

0 2 4 mm

scale

132

Plastic surface mounted package; collector pad for good heat transfer; 4 leads SOT223

2001 Sep 21 8

Philips Semiconductors Product speciﬁcation

40 V low VCEsat PNP transistor PBSS5540Z

DATA SHEET STATUS

Notes

1. Please consult the most recently issued data sheet before initiating or completing a design.

2. The product status of the device(s) described in this data sheet may have changed since this data sheet was

published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com.

DATA SHEET STATUS(1) PRODUCT

STATUS(2) DEFINITIONS

Objective data Development This data sheet contains data from the objective specification for product

development. Philips Semiconductors reserves the right to change the

speciﬁcation in any manner without notice.

Preliminary data Qualiﬁcation This data sheet contains data from the preliminary specification.

Supplementary data will be published at a later date. Philips

Semiconductors reserves the right to change the speciﬁcation without

notice, in order to improve the design and supply the best possible

product.

Product data Production This data sheet contains data from the product specification. Philips

Semiconductors reserves the right to make changes at any time in order

to improve the design, manufacturing and supply. Changes will be

communicated according to the Customer Product/Process Change

Notiﬁcation (CPCN) procedure SNW-SQ-650A.

DEFINITIONS

Short-form specification  The data in a short-form

specification is extracted from a full data sheet with the

same type number and title. For detailed information see

the relevant data sheet or data handbook.

Limiting values definition Limiting values given are in

accordance with the Absolute Maximum Rating System

(IEC 60134). Stress above one or more of the limiting

values may cause permanent damage to the device.

These are stress ratings only and operation of the device

attheseor atanyother conditionsabovethose giveninthe

Characteristics sections of the specification is not implied.

Exposure to limiting values for extended periods may

affect device reliability.

Application information  Applications that are

described herein for any of these products are for

illustrative purposes only. Philips Semiconductors make

norepresentationorwarrantythatsuch applicationswillbe

suitable for the specified use without further testing or

modification.

DISCLAIMERS

Life support applications  These products are not

designed for use in life support appliances, devices, or

systems where malfunction of these products can

reasonably be expected to result in personal injury. Philips

Semiconductorscustomersusingorsellingtheseproducts

for use in such applications do so at their own risk and

agree to fully indemnify Philips Semiconductors for any

damages resulting from such application.

Right to make changes  Philips Semiconductors

reserves the right to make changes, without notice, in the

products, including circuits, standard cells, and/or

software, described or contained herein in order to

improve design and/or performance. Philips

Semiconductors assumes no responsibility or liability for

theuseofany oftheseproducts,conveys no licenceortitle

under any patent, copyright, or mask work right to these

products,and makesnorepresentations orwarranties that

these products are free from patent, copyright, or mask

work right infringement, unless otherwise specified.

2001 Sep 21 9

Philips Semiconductors Product speciﬁcation

40 V low VCEsat PNP transistor PBSS5540Z

NOTES

2001 Sep 21 10

Philips Semiconductors Product speciﬁcation

40 V low VCEsat PNP transistor PBSS5540Z

NOTES

2001 Sep 21 11

Philips Semiconductors Product speciﬁcation

40 V low VCEsat PNP transistor PBSS5540Z

NOTES

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Printed in The Netherlands 613514/04/pp12 Date of release: 2001 Sep 21 Document order number: 9397 750 08434