VP0808L, VP1008L Vishay Siliconix P-Channel Enhancement-Mode MOSFET Transistors Part Number V(BR)DSS Min (V) rDS(on) Max () VGS(th) (V) ID (A) VP0808L -80 5 @ VGS = -10 V -2 to -4.5 -0.28 VP1008L -100 5 @ VGS = -10 V -2 to -4.5 -0.28 Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories, Transistors, etc. Battery Operated Systems Power Supply, Converter Circuits Motor Control High-Side Switching Low On-Resistance: 2.5 Moderate Threshold: -3.4 V Fast Switching Speed: 40 ns Low Input Capacitance: 75 pF Ease in Driving Switches Low Offset (Error) Voltage Low-Voltage Operation High-Speed Switching Easily Driven Without Buffer TO-226AA (TO-92) S 1 G 2 D VP0808L VP1008L 3 Top View Parameter Symbol VP0808L VP1008L Drain-Source Voltage VDS -80 -100 Gate-Source Voltage VGS 30 30 -0.28 -0.28 -0.17 -0.17 -3 -3 Continuous Drain Current (TJ = 150C) TA= 25C TA= 100C Pulsed Drain Currenta Power Dissipation ID IDM TA= 25C TA= 100C PD Maximum Junction-to-Ambient RthJA Maximum Junction-to-Case RthJC Operating Junction and Storage Temperature Range TJ, Tstg 0.8 0.8 0.32 0.32 156 156 -55 to 150 Unit V A W C/W C Notes a. Pulse width limited by maximum junction temperature. Document Number: 70218 S-00530--Rev. C, 03-Apr-00 www.vishay.com FaxBack 408-970-5600 11-1 VP0808L, VP1008L Vishay Siliconix Limits VP0808L Parameter Symbol Test Conditions Typa Min V(BR)DSS VGS = 0 V, ID = -10 mA -110 -80 VGS(th) VDS = VGS, ID = -1 mA -3.4 -2 Max VP1008L Min Max Unit Static Drain-Source Breakdown Voltage -100 V Gate-Threshold Voltage Gate-Body Leakage IGSS VDS = 0 V, VGS = "20 V TJ = 125C VDS = -80 V, VGS = 0 V Z Zero Gate G Voltage V l Drain D i Current C IDSS -4.5 -2 "100 "100 "500 "500 ID(on) Drain-Source On-Resistanceb rDS(on) -500 VDS = -100 V, VGS = 0 V -10 mA A -500 VDS = -15 V, VGS = -10 V -2 VGS = -10 V, ID = -1 A 2.5 5 5 4.4 8 8 TJ = 125C nA -10 TJ = 125C TJ = 125C On-State Drain Currentb -4.5 Forward Transconductanceb gfs VDS = -10 V, ID = -0.5 A 325 Common Source Output Conductanceb gos VDS = -7.5 V, ID = -0.1 A 0.45 -1.1 -1.1 200 A W 200 mS S Dynamic Input Capacitance Ciss VDS = -25 25 V V, VGS = 0 V f = 1 MHz 75 150 150 Output Capacitance Coss 40 60 60 Reverse Transfer Capacitance Crss 18 25 25 td(on) 11 15 15 30 40 40 20 30 30 20 30 30 pF F Switchingc Turn-On Time tr Turn-Off Time td(off) VDD = -25 25 V, V RL = 47 W ID ^ -0.5 A, VGEN = -10 V RG = 25 W tf Notes a. For DESIGN AID ONLY, not subject to production testing.. b. Pulse test: PW v300 ms duty cycle v2%. c. Switching time is essentially independent of operating temperature. www.vishay.com FaxBack 408-970-5600 11-2 ns VPDV10 Document Number: 70218 S-00530--Rev. C, 03-Apr-00 VP0808L, VP1008L Vishay Siliconix Ohmic Region Characteristics Output Characteristics for Low Gate Drive -2.0 -20 TJ = 25C -1.6 VGS = -4.0 V -16 -9 V I D - Drain Current (mA) I D - Drain Current (A) TJ = 25C VGS = -10 V -8 V -1.2 -7 V -0.8 -6 V -0.4 -12 -3.8 V -8 -3.6 V -4 -5 V -3.2 V -3.4 V -4 V 0 0 0 -1 -2 -3 -4 -5 0 -0.4 VDS - Drain-to-Source Voltage (V) -1.2 -1.6 -2.0 VDS - Drain-to-Source Voltage (V) Transfer Characteristics On-Resistance vs. Gate-to-Source Voltage -0.5 7 TJ = 25C TJ = -55C 6 r DS(on)- On-Resistance ( ) 25C -0.4 I D - Drain Current (A) -0.8 125C VDS = -10 V -0.3 -0.2 -0.1 I D = 0.1 A 5 4 0.5 A 1.0 A 3 2 1 0 0 0 -2 -4 -6 -8 0 -10 -8 -12 -16 VGS - Gate-Source Voltage (V) VGS - Gate-Source Voltage (V) On-Resistance vs. Drain Current Normalized On-Resistance vs. Junction Temperature 10 -20 2.00 r DS(on)- Drain-Source On-Resistance (Normalized) r DS(on)- Drain-Source On-Resistance ( ) -4 8 6 4 VGS = -10 V 2 0 1.75 VGS = -10 V ID = 0.5 A 1.50 1.25 1.00 0.75 0.50 0 -0.5 -1.0 -1.5 -2.0 ID - Drain Current (A) Document Number: 70218 S-00530--Rev. C, 03-Apr-00 -2.5 -3.0 -50 -10 30 70 110 150 TJ - Junction Temperature (C) www.vishay.com FaxBack 408-970-5600 11-3 VP0808L, VP1008L Vishay Siliconix Threshold Region Capacitance -10 200 VGS = 0 V f = 1 MHz VDS = -5 V C - Capacitance (pF) I D - Drain Current (mA) 160 TJ = 150C -1 25C 125C -55C -0.1 120 Ciss 80 Coss Crss 40 -0.01 0 -1.0 -1.5 -2.0 -2.5 -3.0 -4.0 -3.5 0 -4.5 VGS - Gate-to-Source Voltage (V) -10 -20 Gate Charge -40 -50 Drive Resistance Effects on Switching -15.0 100 tr ID = -0.5 A -12.5 t - Switching Time (ns) V GS - Gate-to-Source Voltage (V) -30 VDS - Drain-to-Source Voltage (V) -10.0 VDS = -50 V -7.5 -80 V -5.0 tf td(off) 10 td(on) VDD = -25 V RL = 50 VGS = 0 to -10 V ID = -500 mA -2.5 0 1 100 0 200 300 400 500 10 20 Qg - Total Gate Charge (pC) 50 100 RG - Gate Resistance () Normalized Effective Transient Thermal Impedance, Junction-to-Ambient (TO-226AA) 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 Notes: 0.05 PDM 0.02 t1 t2 1. Duty Cycle, D = 0.01 t1 t2 2. Per Unit Base = RthJA = 156C/W Single Pulse 3. TJM - TA = PDMZthJA(t) 0.01 0.1 1 10 100 1K 10 K t1 - Square Wave Pulse Duration (sec) www.vishay.com FaxBack 408-970-5600 11-4 Document Number: 70218 S-00530--Rev. C, 03-Apr-00