2SK2897-01 N-channel MOS-FET FAP-IIIB Series 60V > Features - 0,02 45A 40W Max. Unit V V A mA nA m m S pF pF pF ns ns ns ns A V ns C > Outline Drawing High Current Low On-Resistance No Secondary Breakdown Low Driving Power Avalanche Rated > Applications - Motor Control - General Purpose Power Amplifier - DC-DC converters > Maximum Ratings and Characteristics - Absolute Maximum Ratings (TC=25C), unless otherwise specified Item Drain-Source-Voltage Continous Drain Current Pulsed Drain Current Gate-Source-Voltage Maximum Avalanche Energy Max. Power Dissipation Operating and Storage Temperature Range Symbol V DS ID I D(puls) V GS E AV PD T ch T stg Rating 60 45 185 20 461.9 40 150 -55 ~ +150 Unit V A A V mJ* W C C L=0.304mH,Vcc=24V - Electrical Characteristics (TC=25C), unless otherwise specified Item Drain-Source Breakdown-Voltage Gate Threshhold Voltage Zero Gate Voltage Drain Current Symbol BV DSS V GS(th) I DSS Gate Source Leakage Current Drain Source On-State Resistance I R Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On-Time ton (ton=td(on)+tr) g C C C t t t t I V t Q Turn-Off-Time toff (ton=td(off)+tf) Avalanche Capability Diode Forward On-Voltage Reverse Recovery Time Reverse Recovery Charge - Thermal Characteristics Item Thermal Resistance R R GSS DS(on) fs iss oss rss d(on) r d(off) f AV SD rr rr th(ch-c) th(ch-a) Test conditions ID=1mA VGS=0V ID=1mA VDS=VGS VDS=60V Tch=25C VGS=0V Tch=125C VGS=20V VDS=0V ID=22,5A VGS=4V ID=22,5A VGS=10V ID=22,5A VDS=25V VDS=25V VGS=0V f=1MHz VCC=30V VGS=10V ID=45A RGS=10 Tch=25C L = 100H IF=45A VGS=0V Tch=25C IF=45A VGS=0V -dI/dt=100A/s Tch=25C Min. 60 1,0 Symbol channel to case channel to ambient Min. Typ. 1,5 10 0,2 10 15 2,0 500 1,0 100 20 10 15 35 2900 930 260 13 35 190 75 12 4350 1400 390 30 50 290 140 45 0,95 55 0,10 Typ. 1,43 Max. 3,125 62,5 Fuji Semiconductor, Inc. - P.O. Box 702708 - Dallas, TX 75370 - 972-733-1700 - www.fujisemiconductor.com Unit C/W C/W 2SK2897-01 N-channel MOS-FET 60V 0,02 45A FAP-IIIB Series 40W > Characteristics Typical Output Characteristics Drain-Source On-State Resistance vs. Tch ID=f(VDS); 80s pulse test; TC=25C ID [A] RDS(ON) [m] 1 VDS [V] 2 Tch [C] 3 VGS [V] Typical Drain-Source On-State-Resistance vs. ID Typical Forward Transconductance vs. ID Gate Threshold Voltage vs. Tch RDS(on)=f(ID); 80s pulse test; TC=25C gfs=f(ID); 80s pulse test; VDS=25V; Tch=25C VGS(th)=f(Tch); ID=1mA; VDS=VGS gfs [S] 4 5 ID [A] Typical Capacitances vs. VDS Tch [C] Typical Gate Charge Characteristic IF=f(VSD); 80s pulse test; Tch=25C VDS [V] 7 VDS [V] 8 Qg [nC] Maximum Avalanche Energy vs. starting Tch Forward Characteristics of Reverse Diode VGS=f(Qg); ID=45A; TC=25C IF [A] C=f(VDS); VGS=0V; f=1MHz 6 VGS [V] ID [A] VGS(th) [V] RDS(ON) [m] ID=f(VGS); 80s pulse test; VDS=25V; Tch=25C ID [A] C [F] Typical Transfer Characteristics RDS(on) = f(Tch); ID=22,5A; VGS=10V 9 VSD [V] Safe Operation Area Eas=f(starting Tch): VCC=24V; IAV 45A ID=f(VDS): D=0,01, Tc=25C Transient Thermal impedance 12 starting Tch [C] Zthch=f(t) parameter:D=t/T Zth(ch-c) [K/W] ID [A] 10 EAV [mJ] VDS [V] This specification is subject to change without notice! t [s] 2SK2897-01 N-channel MOS-FET 60V 0,02 45A FAP-IIIB Series 40W > Characteristics Typical Switching Characteristics t [ns] t=f(ID): VCC = 30V, VGS = 10V, RG = 10 VSD [V] Power Dissipation PD=f(TC) 125 PD / PDmax [%] 100 75 50 25 0 0 25 50 75 100 125 150 125 150 TC [C] Maximum Avalanche Current vs. starting Tch IAV=f(starting Tch) 120 IAV / IAVmax [%] 100 80 60 40 20 0 0 25 50 75 100 starting Tch [C] This specification is subject to change without notice!