MITSUBISHI IGBT MODULES CM150TL-12NF HIGH POWER SWITCHING USE CM150TL-12NF IC ................................................................... 150A VCES ............................................................ 600V Insulated Type 6-elements in a pack APPLICATION AC drive inverters & Servo controls, etc OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm L A B E L 11 120 106 0.5 7 40.78 17 2-5.5 MOUNTING HOLES 17 12 13.62 UP VP 1 1 CN 55 35 WP N 12 23 12 23 32 12 23 23.2 12 22 11.75 (13.5) 12 12 (SCREWING DEPTH) +1 W 10.75 (19.75) 22 -0.5 B V 16 8 U 3 1 6-M5 NUTS 1 P A B Housing Type of A and B (J.S.T.Mfg.Co.Ltd) A = B8P-VH-FB-B, B = B2P-VH-FB-B P B CN-7 CN-8 N NC NC NC UP-1 UP-2 VP-1 VP-2 U CN-5 CN-6 WP-1 WP-2 W V CN-3 CN-4 CN-1 CN-2 CIRCUIT DIAGRAM Jun. 2004 MITSUBISHI IGBT MODULES CM150TL-12NF HIGH POWER SWITCHING USE ABSOLUTE MAXIMUM RATINGS (Tj = 25C) Symbol VCES VGES IC ICM IE (Note 1) IEM (Note 1) PC (Note 3) Tj Tstg Viso -- -- -- Parameter Collector-emitter voltage Gate-emitter voltage Collector current Emitter current Maximum collector dissipation Junction temperature Storage temperature Isolation voltage Torque strength Weight Conditions G-E Short C-E Short DC, TC = 93C*1 Pulse Ratings 600 20 150 300 150 300 730 -40 ~ +150 -40 ~ +125 2500 2.5 ~ 3.5 2.5 ~ 3.5 350 (Note 2) Pulse TC = 25C (Note 2) Main Terminal to base plate, AC 1 min. Main Terminal M5 Mounting holes M5 Typical value Unit V V A A A A W C C V N*m N*m g ELECTRICAL CHARACTERISTICS (Tj = 25C) Symbol Parameter Test conditions Limits Typ. -- Max. 1 Unit ICES Collector cutoff current VCE = VCES, VGE = 0V Min. -- VGE(th) Gate-emitter threshold voltage IC = 15mA, VCE = 10V 6 7 8 V IGES Gate leakage current VGE = VGES, VCE = 0V -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- 4.2 -- 1.7 1.7 -- -- -- 600 -- -- -- -- -- 2.5 -- -- -- 0.085 -- 0.5 2.2 -- 23 2.8 0.9 -- 120 100 300 300 150 -- 2.8 0.17 0.31 -- 42 A VCE(sat) Collector-emitter saturation voltage Cies Coes Cres QG td(on) tr td(off) tf trr (Note 1) Qrr (Note 1) VEC(Note 1) Rth(j-c)Q Rth(j-c)R Rth(c-f) RG Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Turn-on delay time Turn-on rise time Turn-off delay time Turn-off fall time Reverse recovery time Reverse recovery charge Emitter-collector voltage Thermal resistance Contact thermal resistance External gate resistance IC = 150A, VGE = 15V Tj = 25C Tj = 125C VCE = 10V VGE = 0V VCC = 300V, IC = 150A, VGE = 15V VCC = 300V, IC = 150A VGE1 = VGE2 = 15V RG = 4.2, Inductive load switching operation IE = 150A IE = 150A, VGE = 0V IGBT part (1/6 module)*1 FWDi part (1/6 module)*1 Case to fin, Thermal compound Applied (1/6 module)*2 mA V nF nF nF nC ns ns ns ns ns C V C/W C/W C/W *1 : Tc measured point is just under the chips. If you use this value, Rth(f-a) should be measured just under the chips. *2 : Typical value is measured by using Shin-etsu Silicone "G-746". Note 1. IE, VEC, trr & Qrr represent characteristics of the anti-parallel, emitter to collector free-wheel diode (FWDi). 2. Pulse width and repetition rate should be such that the device junction temp. (Tj) does not exceed Tjmax rating. 3. Junction temperature (Tj) should not increase beyond 150C. 4. Pulse width and repetition rate should be such as to cause neglible temperature rise. Jun. 2004 MITSUBISHI IGBT MODULES CM150TL-12NF HIGH POWER SWITCHING USE PERFORMANCE CURVES COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) Tj = 25C 15 13 250 12 200 150 11 100 10 50 0 COLLECTOR-EMITTER SATURATION VOLTAGE VCE (sat) (V) VGE = 20V 8 0 2 4 6 9 8 VGE = 15V 3 2 1 Tj = 25C Tj = 125C 0 50 100 150 200 250 COLLECTOR-EMITTER VOLTAGE VCE (V) COLLECTOR CURRENT IC (A) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) 10 7 8 6 4 IC = 150A IC = 300A 2 5 3 2 102 7 5 3 2 Tj = 25C Tj = 125C IC = 60A 0 6 8 10 12 14 16 18 101 20 2 3 4 5 CAPACITANCE-VCE CHARACTERISTICS (TYPICAL) HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) 103 Cies Coes 100 Cres 3 2 VGE = 0V 10-1 -1 10 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 COLLECTOR-EMITTER VOLTAGE VCE (V) SWITCHING TIME (ns) 7 5 7 5 7 5 1 EMITTER-COLLECTOR VOLTAGE VEC (V) 101 3 2 0 GATE-EMITTER VOLTAGE VGE (V) 7 5 3 2 300 103 Tj = 25C 102 CAPACITANCE Cies, Coes, Cres (nF) 4 0 10 EMITTER CURRENT IE (A) COLLECTOR CURRENT IC (A) 300 COLLECTOR-EMITTER SATURATION VOLTAGE VCE (sat) (V) OUTPUT CHARACTERISTICS (TYPICAL) 3 tf 2 td(off) 102 td(on) 7 5 tr 3 2 101 1 10 2 3 5 7 102 Conditions: VCC = 300V VGE = 15V RG = 4.2 Tj = 125C Inductive load 2 3 5 7 103 COLLECTOR CURRENT IC (A) Jun. 2004 MITSUBISHI IGBT MODULES CM150TL-12NF REVERSE RECOVERY CHARACTERISTICS OF FREE-WHEEL DIODE (TYPICAL) 103 7 5 3 2 102 7 5 Irr trr 3 2 101 1 10 2 3 5 7 102 Conditions: VCC = 300V VGE = 15V RG = 4.2 Tj = 25C Inductive load 2 3 5 7 103 TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT part & FWDi part) NORMALIZED TRANSIENT THERMAL IMPEDANCE Zth (j-c) (ratio) REVERSE RECOVERY TIME trr (ns) REVERSE RECOVERY CURRENT lrr (A) HIGH POWER SWITCHING USE IGBT part: 10-2 Per unit base = 7 5 Rth(j-c) = 0.17C/W FWDi part: 3 Per unit base = 2 Rth(j-c) = 0.31C/W -3 10 10-2 7 5 3 2 10-3 10-5 2 3 5 710-4 2 3 5 7 10-3 SWITCHING LOSS vs. GATE RESISTANCE (TYPICAL) 102 Esw(off) Esw(on) 100 Conditions: VCC = 300V VGE = 15V RG = 4.2 Tj = 125C Inductive load C snubber at bus 7 5 3 2 2 3 5 7 102 2 3 SWITCHING LOSS (mJ/pulse) 3 2 Conditions: VCC = 300V VGE = 15V 3 IC = 150A Tj = 125C 2 Inductive load C snubber at bus 101 Esw(off) 7 7 5 5 3 2 100 0 10 5 7 103 Esw(on) 2 3 5 7 101 2 3 5 7 102 COLLECTOR CURRENT IC (A) GATE RESISTANCE RG () RECOVERY LOSS vs. IE (TYPICAL) RECOVERY LOSS vs. GATE RESISTANCE (TYPICAL) 101 101 7 7 5 3 2 Err 100 Conditions: VCC = 300V VGE = 15V RG = 4.2 Tj = 125C Inductive load C snubber at bus 7 5 3 2 2 3 5 7 102 2 3 5 7 103 EMITTER CURRENT IE (A) RECOVERY LOSS (mJ/pulse) SWITCHING LOSS (mJ/pulse) 7 5 3 2 SWITCHING LOSS vs. COLLECTOR CURRENT (TYPICAL) 5 10-1 1 10 10-1 7 5 3 2 TIME (s) 7 RECOVERY LOSS (mJ/pulse) 2 10-1 EMITTER CURRENT IE (A) 101 10-1 1 10 10-3 2 3 5 710-2 2 3 5 710-1 2 3 5 7 100 2 3 5 7 101 100 Single Pulse, 7 5 TC = 25C 3 Under the chip 5 3 2 100 7 5 3 2 10-1 0 10 Err Conditions: VCC = 300V VGE = 15V IE = 150A Tj = 125C Inductive load C snubber at bus 2 3 5 7 101 2 3 5 7 102 GATE RESISTANCE RG () Jun. 2004 MITSUBISHI IGBT MODULES CM150TL-12NF HIGH POWER SWITCHING USE GATE CHARGE CHARACTERISTICS (TYPICAL) GATE-EMITTER VOLTAGE VGE (V) 20 IC = 150A VCC = 200V 16 VCC = 300V 12 8 4 0 0 200 400 600 800 1000 GATE CHARGE QG (nC) Jun. 2004