Z01xxxN SENSITIVE GATE TRIACS FEATURES IT(RMS) = 1A VDRM = 400V to 800V IGT 3mA to 25mA A2 A1 A2 G DESCRIPTION The Z01xxxN series of triacs uses a high performance TOP GLASS PNPN technology. These parts are intended for general purpose high volume applications using surface mount technology. SOT223 (Plastic) ABSOLUTE RATINGS (limiting values) Symbol IT(RMS) ITSM I2 t dI/dt Tstg Tj Tl Parameter Unit RMS on-state current (360 conductionangle) Ttab= 90 C 1 A Non repetitive surge peak on-state current (Tj initial = 25C ) tp = 8.3 ms 8.5 A tp = 10 ms 8 I2t Value for fusing tp = 10 ms 0.35 A2s Critical rate of rise of on-state current diG /dt = 0.1 A/s. IG = 50 mA Repetitive F = 50 Hz 10 A/s Non Repetitive 50 Storage and operating junction temperature range Maximum lead temperature for soldering during 10s Symbol VDRM VRRM Value May 1998 Ed: 1A C 260 C Voltage Parameter Repetitive peak off-state voltage Tj = 125C - 40, + 150 - 40, + 125 Unit D M S N 400 600 700 800 V 1/6 Z01xxxN THERMAL RESISTANCES Symbol Parameter Value Unit Rth(j-a) Junction to ambient 60 C/W Rth(j-t) Junction to leads for D.C 30 C/W Rth(j-t) Junction to leads for A.C 360conduction angle (F=50Hz) 25 C/W GATE CHARACTERISTICS (maximum values) PG (AV)= 0.1 W PGM = 2 W (tp = 20 s) IGM = 1 A (tp = 20 s) ELECTRICAL CHARACTERISTICS Symbol IGT VD=12V (DC) RL=140 Sensitivity Quadrant Test Conditions Tj= 25C Unit 03 07 09 10 I-II-III MAX 3 5 10 25 IV MAX 5 7 10 25 VGT VD=12V (DC) RL=140 Tj= 25C I-II-III-IV MAX 1.5 V VGD VD=VDRM RL=3.3k Tj= 125C I-II-III-IV MIN 0.2 V tgt VD=VDRM IG = 40mA IT = 1.4A dIG/dt = 0.5A/s Tj= 25C TYP 2 s IH * IT= 50 mA Gate open Tj= 25C IG= 1.2 IGT Tj= 25C IL I-II-III-IV MAX 7 10 10 25 mA I-III-IV TYP 7 10 10 25 mA II TYP 14 20 20 50 VTM * ITM= 1.4A tp= 380s Tj= 25C MAX 1.8 V IDRM IRRM VD = VDRM VR = VRRM Tj= 25C MAX 10 A Tj= 110C MAX 200 VD=67%VDRM Gate open Tj= 110C MIN (dI/dt)c = 0.44 A/ms Tj= 110C MIN dV/dt * (dV/dt)c * TYP 10 1 20 50 100 V/s 2 5 V/s 1 * For either polarity of electrode A2 voltage with reference to electrodeA 1 ORDERING INFORMATION Z 01 07 CURRENT M N PACKAGE : N = SOT223 TRIAC TOP GLASS 2/6 mA SENSITIVITY VOLTAGE Z01xxxN Fig.1 : Maximum power dissipation versus RMS on-state current. Ttab (oC) P (W) P(W) 1.6 1.6 180 O 1.4 = 180 1.2 = 90 0.8 = 60 0.6 = 30 Rth(j-t) oC/W 1.2 o 1.0 -90 1.4 o = 120 0.4 Fig.2 : Correlation between maximum power dissipation and maximum allowable temperature (Tamb and Ttab). o o -95 Rth(j-a) oC/W 1.0 -100 0.8 -105 0.6 -110 0.4 -115 o 0.2 I T(RMS) (A) 0.0 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 Fig.3 : RMS on-state current versus tab temperature. 0.2 -120 Tamb (oC) 0.0 0 20 40 60 80 100 120 -125 140 Fig.4 : Relative variation of thermal impedance junction to ambient versus pulse duration. Zth(j-a)/Rth(j-a) I T(RMS) (A) 1.00 1.2 1.0 0.8 = 180 o 0.10 0.6 Stan dar d foo t print , e(Cu) =35 m 0.4 0.2 o Ttab( C) 0 0 tp( s) 10 20 30 40 50 60 70 80 90 100 110 120 130 Fig.5 : Relativevariation of gate trigger current and holding current versus junction temperature. Igt[Tj] o Igt[Tj=25 C] Ih[Tj] o Ih[Tj=25 C] 1E-2 1E-1 1 E+0 1 E+1 1 E+2 5 E +2 Fig.6 : Non repetitive surge peak on-state current versus number of cycles. ITSM(A) 8 2.6 2.4 2.2 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.01 1E-3 Tj initial = 25oC 6 Igt 4 Ih 2 Number of cycles Tj(oC) -40 -20 0 20 40 60 80 100 120 140 0 1 10 100 1000 3/6 Z01xxxN Fig.7 : Non repetitive surge peak on-state current for a sinusoidal pulse with width : tp 10ms, and corresponding value of I2t. Fig.8 : On-statecharacteristics(maximum values). I TSM (A). I2 t (A2 s) I TM (A) 100 10 Tj initial = 25 oC Tj initial o 25 C I TSM 10 1 Tj max 1 Tj max Vto =1.10V Rt =0.420 I2t tp(ms) 0.1 1 4/6 10 0.1 VTM (V) 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 Z01xxxN PACKAGE MECHANICAL DATA SOT223 (Plastic) DIMENSIONS REF. Millimeters Inches Min. Typ. Max. Min. Typ. Max. V1 t A C V A1 B1 V2 e1 D B H E e A1 S O A 1.50 1.70 0.059 0.067 A1 0.02 0.10 0.001 0.004 B 2.95 3.15 0.090 0.124 B1 0.65 0.85 0.026 0.033 C 0.25 0.35 0.010 0.014 D 6.30 6.70 0.248 0.264 e 2.3 0.091 e1 4.6 0.181 E 3.30 3.70 0.130 0.146 H 6.70 O 0.63 7.30 0.264 0.287 0.67 0.025 0.026 0.026 S 0.85 1.05 0.033 0.041 t 1.10 1.30 0.043 0.051 0.65 V 10 max V1 10 min 16max V2 10 min 16max Weight : 0.11 g FOOT PRINT 5/6 Z01xxxN MARKING Type Marking Z0103DN Z3D Z0103MN Z0103SN Z3M Z3S Z0103NN Z3N Z0107DN Z0107MN Z7D Z7M Z0107SN Z7S Z0107NN Z0109DN Z7N Z9D Z0109MN Z9M Z0109SN Z0109NN Z9S Z9N Z0110DN Z0D Z0110MN Z0110SN Z0110NN Z0M Z0S Z0N Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringementof patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. 1998 STMicroelectronics - Printed in Italy - All rights reserved. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Italy - Japan - Korea - Malaysia - Malta - Mexico - Morocco - The Netherlands - Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A. 6/6