Z01xxxN
May 1998 Ed: 1A
SENSITIVE GATE TRIACS
Symbol Parameter Value Unit
IT(RMS) RMSon-statecurrent
(360°conductionangle) Ttab= 90 °C1 A
I
TSM Non repetitivesurgepeak on-statecurrent
(Tjinitial= 25°C) tp = 8.3 ms 8.5 A
tp =10ms 8
I2tI
2
t Valueforfusing tp = 10ms 0.35 A2s
dI/dt Criticalrateof rise of on-statecurrent
IG=50mA diG/dt = 0.1 A/µs. Repetitive
F =50 Hz 10 A/µs
Non
Repetitive 50
Tstg
TjStorageand operatingjunctiontemperaturerange -40, + 150
-40, + 125 °C
Tl Maximum lead temperatureforsolderingduring 10s 260 °C
ABSOLUTE RATINGS (limiting values)
IT(RMS) =1A
V
DRM =400V to 800V
IGT ≤
3mAto ≤
25mA
FEATURES
Symbol Parameter Voltage Unit
DMSN
V
DRM
VRRM Repetitivepeak off-statevoltage
Tj= 125°C400 600 700 800 V
The Z01xxxN series of triacs uses a high
performance TOP GLASS PNPN technology.
These parts are intended for general purpose
high volume applications using surface mount
technology.
DESCRIPTION
SOT223
(Plastic)
A1
A2
G
A2
1/6
PG (AV)= 0.1W PGM = 2 W (tp = 20µs) IGM = 1A (tp =20 µs)
GATECHARACTERISTICS (maximum values)
Symbol Parameter Value Unit
Rth(j-a) Junctionto ambient 60 °C/W
Rth(j-t) Junctionto leadsfor D.C 30 °C/W
Rth(j-t) Junctionto leadsfor A.C 360°conductionangle (F=50Hz) 25 °C/W
THERMALRESISTANCES
Symbol TestConditions Quadrant Sensitivity Unit
03 07 09 10
IGT VD=12V (DC) RL=140ΩTj=25°C I-II-III MAX 3 5 10 25 mA
IV MAX 5 7 10 25
VGT VD=12V (DC) RL=140ΩTj=25°C I-II-III-IV MAX 1.5 V
VGD VD=VDRM RL=3.3kΩTj=125°C I-II-III-IV MIN 0.2 V
tgt VD=VDRM IG= 40mA
IT=1.4A
dIG/dt =0.5A/µs
Tj=25°C I-II-III-IV TYP 2 µs
IH*I
T
= 50mA Gateopen Tj=25°C MAX7 101025 mA
I
LI
G
=1.2 IGT Tj=25°C I-III-IV TYP 7 10 10 25 mA
II TYP 14 20 20 50
VTM *I
TM= 1.4A tp=380µs Tj=25°C MAX 1.8 V
IDRM
IRRM VD=V
DRM
VR=V
RRM Tj=25°C MAX 10 µA
Tj=110°C MAX 200
dV/dt* VD=67%VDRM Gateopen Tj=110°C MIN 10 20 50 100 V/µs
(dV/dt)c* (dI/dt)c= 0.44 A/ms Tj=110°C MIN 2 5 V/µs
TYP 1 1
* For either polarity of electrodeA2voltagewith referenceto electrodeA1
ELECTRICAL CHARACTERISTICS
ORDERINGINFORMATION
Z0107MN
TRIAC TOPGLASS
CURRENT
PACKAGE:
N = SOT223
VOLTAGE
SENSITIVITY
Z01xxxN
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0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6 180O
= 180o
=120
o
=90
o
=60
o
=30
o
T(RMS)
I(A)
P(W)
Fig.1 : Maximum power dissipation versus RMS
on-statecurrent.
0 102030405060708090100110120130
0
0.2
0.4
0.6
0.8
1.2
1.0
=180
o
Ttab( C)
o
I (A)
T(RMS)
Fig.3 : RMS on-statecurrent versus tab tempera-
ture.
2.6
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
Igt
Tj( C)
o
Ih
-40 -20 0 20 40 60 80 100 120 140
Igt[Tj]
Igt[Tj=25 C]
oIh[Tj]
Ih[Tj=25 C]
o
Fig.5: Relativevariationof gatetriggercurrentand
holdingcurrentversusjunctiontemperature.
0 20406080100120140
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
-90
-95
-100
-105
-110
-115
-120
-125
P(W)
Rth(j-a) C/W
o
Rth(j-t) C/W
o
Tamb ( C)
o
Ttab ( C)
o
Fig.2: Correlationbetweenmaximumpowerdissi-
pation and maximum allowable temperature
(Tamband Ttab).
1E-3 1E-2 1E-1 1E+0 1E+1 1E+2 5E+2
0.01
0.10
1.00 Zth(j-a)/Rth(j-a)
tp(s)
Standard foot print , e(Cu)=35
m
Fig.4 : Relative variation of thermal impedance
junctionto ambientversus pulseduration.
1101001000
0
2
4
6
8Tj initial = 25 C
o
Number of cycles
I (A)
TSM
Fig.6 : Non repetitive surge peak on-state current
versusnumberof cycles.
Z01xxxN
3/6
110
0.1
1
10
100 I (A). I2t(A
2s)
TSM
Tj initial = 25 C
o
ITSM
I2t
tp(ms)
Fig.7: Nonrepetitivesurge peakon-statecurrent
for a sinusoidal pulse with width : tp ≤10ms, and
correspondingvalue ofI2t.
00.511.522.533.544.55
0.1
1
10 I (A)
TM
Tj initial
25 C
o
Tj max
V (V)
TM
Tj max
Vto =1.10V
Rt =0.420
Fig.8: On-statecharacteristics(maximumvalues).
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PACKAGE MECHANICAL DATA
SOT223(Plastic)
A
A1
t
B1
e1
D
B
HE
eS
C
A1
V
V1
V2 O
REF. DIMENSIONS
Millimeters Inches
Min. Typ. Max. Min. Typ. Max.
A 1.50 1.70 0.059 0.067
A1 0.02 0.10 0.001 0.004
B 2.95 3.15 0.090 0.124
B1 0.65 0.85 0.026 0.033
C 0.25 0.35 0.010 0.014
D 6.30 6.70 0.248 0.264
e 2.3 0.091
e1 4.6 0.181
E 3.30 3.70 0.130 0.146
H 6.70 7.30 0.264 0.287
O 0.63 0.65 0.67 0.025 0.026 0.026
S 0.85 1.05 0.033 0.041
t 1.10 1.30 0.043 0.051
V10°max
V1 10°min 16°max
V2 10°min 16°max
Weight : 0.11 g
FOOT PRINT
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Informationfurnishedis believedto beaccurate and reliable.However, STMicroelectronics assumes no responsibility for theconsequences of
use of suchinformationnor for any infringementof patentsor otherrights ofthird parties which may resultfrom its use.No license isgranted by
implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to
change withoutnotice. This publicationsupersedes and replacesall information previously supplied.
STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written ap-
proval of STMicroelectronics.
1998 STMicroelectronics - Printed in Italy - All rights reserved.
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Type Marking
Z0103DN Z3D
Z0103MN Z3M
Z0103SN Z3S
Z0103NN Z3N
Z0107DN Z7D
Z0107MN Z7M
Z0107SN Z7S
Z0107NN Z7N
Z0109DN Z9D
Z0109MN Z9M
Z0109SN Z9S
Z0109NN Z9N
Z0110DN Z0D
Z0110MN Z0M
Z0110SN Z0S
Z0110NN Z0N
MARKING
Z01xxxN
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