6MBI150U-170 IGBT Module U-Series 1700V / 150A 6 in one-package Features Applications * High speed switching * Voltage drive * Low inductance module structure * Uninterruptible power supply * Inverter for Motor drive * AC and DC Servo drive amplifier * Industrial machines, such as Welding machines Maximum ratings and characteristics Absolute maximum ratings (at Tc=25C unless otherwise specified) Item Collector-Emitter voltage Gate-Emitter voltaga Collector current Symbol VCES VGES IC ICp Conditions Continuous Tc=25C Tc=80C 1ms Tc=25C Tc=80C -IC -IC pulse PC Tj Tstg V iso Unit V V A Rating 1700 20 225 150 450 300 150 300 735 +150 -40 to +125 3400 W C 1 device Collector Power Dissipation Junction temperature Storage temperature AC:1min. Isolation voltage between terminal and copper base *1 between thermistor and others *2 3.5 Screw Torque Mounting *3 4.5 Terminals *4 *1 : All terminals should be connected together when isolation test will be done. *2 : Two thermistor terminals should be connected together, each other terminals should be connected together and shorted to base plate when isolation test will be done. *3 :Recommendable value : 2.5 to 3.5 N*m(M5) *4 :Recommendable value : 3.5 to 4.5 N*m(M6) VAC N*m Electrical characteristics (at Tj=25C unless otherwise specified) Item Symbols Inverter Zero gate voltage collector current Gate-Emitter leakage current Gate-Emitter threshold voltage Collector-Emitter saturation voltage Input capacitance Turn-on time Turn-off time Thermistor Forward on voltage Reverse recovery time Lead resistance, terminal-chip* Resistance ICES IGES VGE(th) VCE(sat) (terminal) VCE(sat) (chip) Cies ton tr tr(i) toff tf VF (terminal) VF (chip) t rr R lead R B value B *4:Biggest internal terminal resistance among arm. Conditions VGE=0V, VCE=1700V VCE=0V, VGE=20V VCE=20V, IC=150mA VGE=15V, IC=150A Tj=25C Tj=125C Tj=25C Tj=125C VCE=10V, VGE=0V, f=1MHz VCC =900V IC=150A VGE=15V RG=4.7 VGE=0V IF=150A Tj=25C Tj=125C Tj=25C Tj=125C IF=150A T=25C T=100C T=25/50C Characteristics Min. Typ. - - - - 4.5 6.5 - 2.20 - 2.55 - 2.05 - 2.40 - 15 - 0.58 - 0.32 - 0.10 - 0.80 - 0.15 - 1.95 - 2.15 - 1.80 - 2.00 - 0.3 - 1.0 - 5000 465 495 3305 3375 Unit Max. 2.0 400 8.5 2.70 - 2.55 - - 1.20 0.60 - 1.50 0.30 2.70 - 2.55 - 0.60 - - 520 3450 mA nA V V nF s V s m Thermal resistance characteristics Items Thermal resistance Contact Thermal resistance Symbols Rth(j-c) Rth(j-c) Rth(c-f)*5 Conditions IGBT FWD With thermal compound Characteristics Min. Typ. - - - - - 0.025 *5 : This is the value which is defined mounting on the additional cooling fin with thermal compound. http://store.iiic.cc/ Unit Max. 0.17 0.28 - C/W C/W C/W IGBT Module 6MBI150U-170 Characteristics (Representative) Collector current vs. Collector-Emitter voltage (typ.) Collector current vs. Collector-Emitter voltage (typ.) Tj= 25C / chip Tj= 125C / chip 400 400 Collector current : Ic [A] VGE=20V 15V 15V 300 Collector current : Ic [A] VGE=20V 300 12V 200 100 10V 12V 200 10V 100 9V 9V 0 0 0 1 2 3 4 0 5 Collector-Emitter voltage : VCE [V] 1 2 Collector current vs. Collector-Emitter voltage (typ.) 4 5 Collector-Emitter voltage vs. Gate-Emitter voltage (typ.) VGE=15V / chip Tj=25C / chip 10 Collector - Emitter voltage : VCE [ V ] 400 T j=25C 300 Collector current : Ic [A] 3 Collector-Emitter voltage : VCE [V] T j=125C 200 100 0 8 6 4 Ic=300A Ic=150A Ic=75A 2 0 0 1 2 3 4 5 5 Collector-Emitter voltage : VCE [V] 10 15 20 25 Gate - Emitter voltage : VGE [ V ] Capacitance vs. Collector-Emitter voltage (typ.) Dynamic Gate charge (typ.) VGE=0V, f= 1M Hz, Tj= 25C Vcc=900V, Ic=150A, Tj= 25C Collector-Emitter voltage : VCE [ 200V/div ] Gate - Emitter voltage : VGE [ 5V/div ] Capacitance : Cies, Coes, Cres [ nF ] 1000.0 100.0 Cies 10.0 Cres 1.0 Coes VGE VCE 0 0.1 0 10 20 30 Collector-Emitter voltage : VCE [V] 0 200 400 Gate charge : Qg [ nC ] http://store.iiic.cc/ 600 800 IGBT Module 6MBI150U-170 Switching time vs. Collector current (typ.) Switching time vs. Collector current (typ.) Vcc=900V, VGE=15V, Rg=4.7, Tj= 25C Vcc=900V, VGE=15V, Rg=4.7, Tj=125C 10000 Switching time : ton, tr, toff, tf [ nsec ] Switching time : ton, tr, toff, tf [ nsec ] 10000 toff 1000 ton tr tf 100 toff 1000 ton tr tf 100 10 10 0 100 200 0 300 100 Collector current : Ic [ A ] 200 300 Collector current : Ic [ A ] Switching time vs. Gate resistance (typ.) Switching loss vs. Collector current (typ.) Vcc=900V, Ic=150A, VGE=15V, Tj= 25C Vcc=900V, VGE=15V, Rg=4.7 10000 80 1000 Switching loss : Eon, Eoff, Err [ mJ/pulse ] Switching time : ton, tr, toff, tf [ nsec ] Eoff(125C) toff ton tr tf 100 70 Eoff(25C) 60 50 Eon(125C) Err(125C) 40 Err(25C) 30 Eon(25C) 20 10 10 0 1 10 100 0 50 100 150 200 250 300 Collector current : Ic [ A ] Gate resistance : Rg [ ] Switching loss vs. Gate resistance (typ.) Reverse bias safe operating area (max.) Vcc=900V, Ic=150A, VGE=15V, Tj= 125C +VGE=15V,-VGE <= 15V, RG >= 4.7 ,Tj <= 125C Stray inductance <= 100nH 450 Eon Collector current : Ic [ A ] Switching loss : Eon, Eoff, Err [ mJ/pulse ] 100 Eoff 50 300 150 Err 0 0 1 10 100 Gate resistance : Rg [ ] 0 300 600 900 1200 1500 Collector - Emitter voltage : VCE [ V ] http://store.iiic.cc/ 1800 6MBI150U-170 IGBT Module Forward current vs. Forward on voltage (typ.) Reverse recovery characteristics (typ.) chip Vcc=900V, VGE=15V, Rg=4.7 1000 Reverse recovery current : Irr [ A ] Reverse recovery time : trr [ nsec ] Forward current : IF [ A ] 400 T j=25C 300 T j=125C 200 100 trr (125C) trr (25C) Irr (125C) Irr (25C) 100 10 0 0 1 2 3 0 4 100 Forward on voltage : VF [ V ] 200 300 Forward current : IF [ A ] Transient thermal resistance (max.) Temperature characteristic (typ.) 1.000 100 0.100 Resistance : R [ k ] Thermal resistanse : Rth(j-c) [ C/W ] FWD IGBT 0.010 0.001 0.001 0.010 0.100 1.000 10 1 0.1 -60 -40 -20 0 20 40 60 80 100 120 140 160 180 Pulse width : Pw [ sec ] T emperature [C ] http://store.iiic.cc/ IGBT Module 6MBI150U-170 Outline Drawings, mm M629 Equivalent Circuit Schematic [Inverter] 2 11 9 12 10 1 [Thermister] 4 6 7 8 3 5 http://store.iiic.cc/