6MBI150U-170 1700V / 150A 6 in one-package
Features
· High speed switching
· Voltage drive
· Low inductance module structure
Applications
· Inverter for Motor drive
· AC and DC Servo drive amplifier
Maximum ratings and characteristics
Absolute maximum ratings (at Tc=25°C unless otherwise specified)
Item
Zero gate voltage collector current
Gate-Emitter leakage current
Gate-Emitter threshold voltage
Collector-Emitter saturation voltage
Input capacitance
Turn-on time
Turn-off time
Forward on voltage
Reverse recovery time
Lead resistance, terminal-chip*
Resistance
B value
ICES
IGES
VGE(th)
VCE(sat)
(terminal)
VCE(sat)
(chip)
Cies
ton
tr
tr(i)
toff
tf
VF
(terminal)
VF
(chip)
trr
R lead
R
B
– – 2.0
– – 400
4.5 6.5 8.5
– 2.20 2.70
– 2.55 –
– 2.05 2.55
– 2.40 –
– 15 –
– 0.58 1.20
– 0.32 0.60
– 0.10 –
– 0.80 1.50
– 0.15 0.30
– 1.95 2.70
– 2.15 –
– 1.80 2.55
– 2.00 –
– 0.3 0.60
– 1.0 –
– 5000 –
465 495 520
3305 3375 3450
VGE=0V, VCE=1700V
VCE=0V, V GE=±20V
VCE=20V, IC=150mA
VGE=15V, IC=150A
VCE=10V, VGE=0V, f=1MHz
VCC=900V
IC=150A
VGE=±15V
RG=4.7 Ω
VGE=0V
IF=150A
IF=150A
T=25°C
T=100°C
T=25/50°C
mA
nA
V
V
nF
µs
V
µs
mΩ
Ω
Κ
Electrical characteristics (at Tj=25°C unless otherwise specified)
Thermal resistance characteristics
Thermal resistance
Contact Thermal resistance
– – 0.17
– – 0.28
– 0.025 –
IGBT
FWD
With thermal compound
°C/W
°C/W
°C/W
*1 : All terminals should be connected together when isolation test will be done.
*2 : Two thermistor terminals should be connected together, each other terminals should be connected together and shorted
to base plate when isolation test will be done.
*3 :Recommendable value : 2.5 to 3.5 N·m(M5) *4 :Recommendable value : 3.5 to 4.5 N·m(M6)
Symbols C on ditions Characteristics Unit
Min. Typ. Max.
Rth(j-c)
Rth(j-c)
Rth(c-f)*5
IGBT Module U-Series
*5 : This is the value which is defined mounting on the additional cooling fin with thermal compound.
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
*4:Biggest internal terminal resistance among arm.
Items Symbols Conditions Characteristics Unit
Min. Typ. Max.
Item Symbol
Collector-Emitter voltage VCES
Gate-Emitter voltaga VGES
Collector current IC
ICp
-IC
-IC pulse
Collector Power Dissipation PC
Junction temperature Tj
Storage temperature Tstg
Isolation voltage between terminal and copper base *1 Viso
between thermistor and others *2
Screw Torque Mounting *3 -
Terminals *4
Rating
1700
±20
225
150
450
300
150
300
735
+150
-40 to +125
3400
3.5
4.5
Unit
V
V
A
W
°C
VAC
N·m
Conditions
Continuous
1ms
1 device
AC:1min.
Tc=25°C
Tc=80°C
Tc=25°C
Tc=80°C
· Uninterruptible power supply
· Industrial machines, such as Welding machines
Inverter
Thermistor
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IGBT Module
Characteristics (Representative)
6MBI150U-170
VGE=0V, f= 1M Hz , T j= 25°C Vcc=900V, Ic=150A, T j= 25°C
Collector current vs. Collector-Emitter voltage (ty p.)
Tj= 125°C / chip
Capacitance vs. Collector-Emitter voltage (typ.) Dynamic Gate charge (typ.)
Collector current vs. Collector-Emitter voltage (typ.)
Tj= 25°C / chip
Collector current vs. Collector-Emitter voltage (ty p.)
VGE=15V / chip Tj=25°C / chip
Collector-Emitter voltage vs. Gate-Emitter voltage (typ.)
0
100
200
300
400
0 1 2 3 4 5
Collector current : Ic [A]
Collect or-Emit t er volt age : VCE [V]
VGE=2 0 V 15V
12V
10V
9V
0
100
200
300
400
0 1 2 3 4 5
Collector current : Ic [A]
Collect or-Emit t er volt age : VCE [V]
VGE=2 0 V 15V
12V
10V
9V
0
100
200
300
400
0 1 2 3 4 5
Collector current : Ic [A]
Collect or-Emit t er volt age : VCE [V]
Tj=125°C
Tj=25°C
0
2
4
6
8
10
5 10 15 20 25
Collector - Emitter voltage : VCE [ V ]
Gat e - Em it t e r v olt age : VGE [ V ]
Ic=300A
Ic=150A
Ic=75A
0.1
1.0
10.0
100.0
1000.0
0 10 20 30
Capacitance : Cies, Coes, Cres [ nF ]
Collect or-Emit t er volt age : VCE [V]
Cies
Coes
Cres
0 200 400 600 800
Collector-Emitter voltage : VCE [ 200V/div ]
Gate - Emitter voltage : VGE [ 5V/div ]
Gat e ch ar ge : Qg [ nC ]
VGE
VCE
0
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IGBT Module
6MBI150U-170
Reverse bias safe operating area (max.)Switching loss vs. Gat e resistance (ty p .)
+VGE=15V,-VGE <= 15V, RG >= 4.7Ω ,Tj <= 125°C
Switching time vs. Collector current (ty p .)
Vcc=900V, VGE=±15V, Rg=4.7Ω, Tj=125°C
Switching time vs. Gat e resist ance (ty p .)
Switching time vs. Collector current (ty p .)
Vcc=900V, VGE=±15V, Rg=4.7Ω, Tj= 25°C
Vcc=900V, Ic=150A, VG E=±15V, T j= 25°C
Stray inductance <= 100nH
Switching loss vs. Collect or current (ty p .)
Vcc=900V, VGE=±15V, Rg=4.7Ω
Vcc=900V, Ic=150A, VG E=±15V, Tj= 125°C
10
100
1000
10000
0 100 200 300
Switching time : ton, tr, toff, tf [ nsec ]
Collect or current : Ic [ A ]
10
100
1000
10000
0 100 200 300
Switching time : ton, tr, toff, tf [ nsec ]
Collect or current : Ic [ A ]
10
100
1000
10000
1 10 100
Switching time : ton, tr, toff, tf [ nsec ]
Gat e re sist a n c e : Rg [ Ω ]
tr
tf
toff
ton
0
10
20
30
40
50
60
70
80
0 50 100 150 200 250 300
Switching loss : Eon, Eoff, Err [ mJ/pulse ]
Collect or current : Ic [ A ]
Eon(125°C)
Eon(25°C)
Eoff(125°C)
Err(125°C)
Err(25°C)
Eoff(25°C)
0
50
100
1 10 100
Switching loss : Eon, Eoff, Err [ mJ/pulse ]
Gat e re si st an ce : Rg [ Ω ]
Eoff
Err
Eon
0
150
300
450
0 300 600 900 1200 1500 1800
Collector current : Ic [ A ]
Collect or - Emit t er volt age : VCE [ V ]
toff
ton
tr
tf
toff ton
tr
tf
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IGBT Module
6MBI150U-170
Transient thermal resistance (max.)
Reverse recovery characteristics (typ.)
Vcc=900V, VGE=±15V, Rg=4.7Ω
Forward current vs. Forward on voltage (typ.)
chip
Temperature characteristic (typ.)
0
100
200
300
400
0 1 2 3 4
Forward current : IF [ A ]
Forward on voltage : VF [ V ]
Tj=125°C
Tj=25°C
10
100
1000
0 100 200 300
Reverse recovery current : Irr [ A ]
Reverse recovery time : trr [ nsec ]
Forward current : IF [ A ]
trr (125°C)
trr (25°C)
Irr (125°C)
Irr (25°C)
0.001
0.010
0.100
1.000
0.001 0.010 0.100 1.000
Thermal resistanse : Rth(j-c) [ °C/W ]
Pulse width : Pw [ sec ]
FWD
IGBT
0.1
1
10
100
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
Temperature [°C ]
Resistance : R [ kΩ ]
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Outline Drawings, mm
M629
6MBI150U-170 IGBT Module
Equivalent Circuit Schematic
[Thermister]
1 3 5
11
12 10
9
8
7
2 4 6
[Inverter]
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