SIEMENS BAR 64... Silicon PIN Diode @ High voltage current controlled FF resistor for RF attenuator and swirches e Freqency range above 1 MHz @ Low resistance and short carrier lifetime @ For frequencies up to 3 GHz Type [Marking Ordering code Pin configuration |Package 1) {tape and reel) 1 2 3 BAR 64 POs Q62702-A1041 A - CG jSOT-23 BAR 64-04 PPs Q62702-A1010 A Cc | C/A BAR 64-05 PRs Q62702-A1042 A A | cic BAR 64-06 PSs Q62702-A1043 Cc C | AIA Maximum ratings per diode Parameter Symbol BAR 64 Unit Reverse voltage VR 200 Vv Forward current fe 100 mA Total Power dissipation Ts < 90C Prot 250 mw BAR64-04,-05,-06 Ts 5 65C 250 Junction temperature Tj 150 C Operating temperature range Top -5 +150C Ko) Storage temperature range Taig -55...4150C c Thermal resistance Junction-ambient 1) Ath a KAW BAR64 < 320 BAR64-04,-05,-06 < 500 Junction-soldering point Ain is BAR64 < 240 BAR64-04,-05, -06 < 340 1)Package mounted on alumina 15mm x 16.7mm x 0.7mm Semiconductor Group 164 Edition A01, 23.02.95 SIEMENS BAR 64... Electrical characteristics at Ta = 25 C, unless otherwise specified. Parameter Symbol Value Unit min. Ityp. |max DC characteristics per diode Breakdown voltage Vier) V In =5 pA 200 - : Forward voltage Ve Vv fe=50mA - - 14 Diode capacitance Cr pF Va = 20 V, f= 1 MHz - 0.23 [0.35 Forward resistance f Q fe =1mA, f= 100 MHz - 12.5 |20 fe = 10 mA, f= 100 MHz - 2.1 3.8 le = 100 mA, f= 100 MHz 0.85 1.35 Charge carrier lifetime tL us fe = 10 MA, la=6 MA, IR=SMA : 1.55 |- Series inductance Ly : 1.4 - nH Forward current f= f (Ts: Ta") * mounted on alumina BAR64 140 mA 12a 188 \ Fg 88 Y he 7 iN 50 AlN 48 20 \ , UL Semiconductor Group Forward current r= f (7s: Ta) per each diode BAR64-05,-05,-06 148 128 mA ea ~ N DNenn rs NOLIN 88 ~ N f N F rN ON 6B A N NN 48 N 28 8 8 56 108 _ Ts ; Th 165 Edition AO1, 23.02.95 158 C SIEMENS BAR 64... Permissible pulse load Ais = f (t,) BAR64 18! De as 02 at oe ae 6.8L 2.25 4 Permissible pulse load Aijs= f(t) BAR64-04,-05,-06 De. e5 a2 a1 1.6 ae 9.81 Cees a 1a = = ie = 107) 61a te te oie Semiconductor Group Permissible pulse load |max/ pc={(t,) BAR64 18? Tf_pex 1k Permissible pulse load lemax/lroc = f(t) BAR64-04,-05,-06 Hl gax Ito s U 19 1a~* ia tat ia 18% 187% 10% s tp 166 Edition A01, 23.02.95 SIEMENS BAR 64... Forward current /:=f V;) 102 EHDO7 137 mA f l 10 107! -2 10 0 0.5 oO VY 45 V, Forward resistance f= f (/-) Diode capacitance C,= f (Vg) f= 100 MHz f= 1 MHz. 103 HDO7135 05. : enDo7 136 r, 0 Cy "| | f | 0.4 | 102 \ | : 03 s | 1 an, 10 0.2 : i 10 | 0.1 - ii. oO 3 | | | J 107? to-' 10 10' mA 10? 0 10 vo 2 ~ [, ~ Wh Semiconductor Group 167 Edition AO1, 23.02.95