MRF157 POWER FIELD EFFECT TRANSISTOR DESCRIPTION: PACKAGE STYLE .900 2L SQ The ASI MRF157 is an Enhancement-Mode N-Channel MOS designed for linear large-signal output stages to 80 MHz. MAXIMUM RATINGS ID 60 Adc VDSS 125 V VDGO 125 V VGS 40 V PDISS 1350 W @ TC = 25 C TJ -65 C to +200 C TSTG -65 C to +150 C JC 0.13 C/W CHARACTERISTICS NONE TC = 25 C SYMBOL TEST CONDITIONS MINIMUM V(BR)DSS ID = 100 mA VGS = 0 V 125 IDSS VDSS = 50 V VGS = 0 V 20 mA IGSS VGS = 20 V VDS = 0 V 5.0 A VGS(th) VDS = 10 V ID = 100 mA 1.0 5.0 V VDS (on) VDS = 10 V ID = 40 A 1.0 5.0 V gfs VDS = 10 V ID = 20 A 16 Ciss Coss Crss VDS = 50 V VGS = 0 V f = 1.0 MHz VDD = 50 V Pout = 600 W IDQ = 800 mA f = 30 MHz Gps IMD(d3) TYPICAL UNITS V mhos 1800 750 75 pF 21 50 -25 dB % dB 18 45 A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE NORTH HOLLYWOOD, CA 91605 (818) 982-1200 FAX (818) 765-3004 Specifications are subject to change without notice. MAXIMUM REV. B 1/1 Mouser Electronics Authorized Distributor Click to View Pricing, Inventory, Delivery & Lifecycle Information: Advanced Semiconductor, Inc.: MRF157