A D V A N C E D S E M I C O N D U C T O R, I N C. REV. B
7525 ETHEL AVENUE NORTH HOLLYWOOD, CA 91605 (818) 982-1200 FAX (818) 765-3004 1/1
Specifications are subject to change without notice.
CHARACTERISTICS TC = 25 °C NONE
SYMBOL TEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS
V(BR)DSS ID = 100 mA VGS = 0 V 125 V
IDSS VDSS = 50 V VGS = 0 V 20 mA
IGSS VGS = 20 V VDS = 0 V 5.0 A
VGS(th) VDS = 10 V ID = 100 mA 1.0 5.0 V
VDS (on) VDS = 10 V ID = 40 A 1.0 5.0 V
gfs VDS = 10 V ID = 20 A 16 mhos
Ciss
Coss
Crss VDS = 50 V VGS = 0 V f = 1.0 MHz 1800
750
75
pF
Gps
IMD(d3)
VDD = 50 V IDQ = 800 mA f = 30 MHz
Pout = 600 W
18
45 21
50
-25
dB
%
dB
POWER FIELD EFFECT TRANSISTOR
MRF157
DESCRIPTION:
The ASI MRF157 is an
Enhancement-Mode N-Channel MOS
designed for linear large-signal output
stages to 80 MHz.
MAXIMUM RATINGS
ID 60 Adc
VDSS 125 V
VDGO 125 V
VGS ±40 V
PDISS 1350 W @ TC = 25 °C
TJ -65 °C to +200 °C
TSTG -65 °C to +150 °C
JC 0.13 °C/W
PACKAGE STYLE .900 2L SQ
Mouser Electronics
Authorized Distributor
Click to View Pricing, Inventory, Delivery & Lifecycle Information:
Advanced Semiconductor, Inc.:
MRF157