©2004 Fairchild Semic ond uct or Cor porati on MMBD4148/SE/CC/CA, Rev. A1
MMBD4148/SE/CC/CA
Small Signal Diode
Absolute Maximum Ratings * TA = 25°C unless otherwise not ed
* These ratings are limiting values above which the serviceability of the diode may be impaired.
Thermal Characteristics
Electrical Characteristics TA=25°C unless otherwise noted
Symbol Parameter Value Units
VRRM Maximum Repetitive Reverse Voltage 100 V
IF(AV) Average Rectified Forward Current 200 mA
IFSM Non-repetitive Peak Forward Surge Current
Pulse Width = 1.0 second
Pulse Width = 1.0 microsecond 1.0
2.0 A
A
TSTG Storage Temperature Range -55 to +150 °C
TJOperating Junction Temperature 150 °C
Symbol Parameter Value Units
PDPower Dissipation 350 mW
RθJA Thermal Resistance, Junction to Ambient 357 °C/W
Symbol Parameter Test Conditions Min. Max. Units
VRBreakdown Voltage IR = 5.0µA
IR = 100µA75
100 V
V
VFForward Voltage IF = 10mA 1.0 V
IRReverse Leakage Current VR = 20V
VR = 20V, TA = 150°C
VR =75V
25
50
5.0
nA
µA
µA
CTTotal Capacitance VR = 0V, f = 1.0MHz 4.0 pF
trr Reverse Recovery Time IF = 10mA, VR = 6.0V,
IRR = 1.0mA, RL = 100Ω
4.0 ns
MMBD4148/SE/CC/CA
Connection Diagram
3
1
12
3
5H
2
1
2
3
SOT-23
3
12
3
12
1
3
4148 4148SE
4148CA4148CC
MMBD4148
MMBD4148CC 5H
D5 MMBD4148CA
MMBD4148SE D6
D4
MARKING
©2004 Fairchild Semic ond uct or Cor porati on MMBD4148/SE/CC/CA, Rev. A1
MMBD4148/SE/CC/CA
Typical Characteristics
110
120
130
140
150
1 2 3 5 10 2 0 30 50 1 0 0
Ta= 25 C
Reverse Voltage, V
R
[V]
Rev e rs e Cu rre n t, I
R
[uA]
0
50
100
150
200
250
300
10 20 30 50 70 100
Ta= 25 C
Reverse Current, I
R
[nA]
Reverse Volta
g
e, V
R
[
V
]
250
300
350
400
450
1 2 3 5 10 20 3 0 5 0 10 0
Ta= 25 C
Forward V oltage, V
F
[mV ]
Forward C u rrent, I
F
[uA ]
450
500
550
600
650
700
0. 1 0.2 0.3 0. 5 1 2 3 5 1 0
Ta= 25 C
Forward V oltage, V
F
[m V ]
Fo rward Curre nt, I
F
[m A ]
0.6
0.8
1.0
1.2
1.4
10 2 0 3 0 50 1 00 2 00 300 5 00
Ta= 25 C
Forward Voltage, V
F
[V ]
Forward Current, I
F
[mA ]
0 2 4 6 8 10 12 14
1.0
1.1
1.2
1.3
Ta= 25 C
Total Capacitance [pF]
Reverse V oltage [V]
Figure 1. Reverse V oltage vs Reverse Current
BV - 1.0 to 100uA Figure 2. Reverse Current vs Reverse V oltage
IR - 10 to 100 V
Figure 3. Forward V oltage vs Forward Current
VF - 1.0 to 100 uA Figure 4. Forward V oltage vs Forward Current
VF - 0.1 to 10 mA
Figure 5. Forward V oltage vs Forward Current
VF - 10 - 800 mA Figure 6. T otal Capacitance vs Reverse V oltage
°°
°
°
°°
©2004 Fairchild Semic ond uct or Cor porati on MMBD4148/SE/CC/CA, Rev. A1
MMBD4148/SE/CC/CA
Typical Characteristics
(continued)
10 20 30 40 50 60
1.0
1.5
2.0
2.5
3.0
3.5
4.0
Ta= 25 C
Reverse Recovery Time [nS]
Reverse Current [mA]
0 50 100 150
0
100
200
300
400
I
F(AV)
- AVERAGE RECTIFIED CUR RENT - mA
C u rrent [mA]
Am b ient Te mperature, T
A
[ C]
0 50 100 150 200
0
100
200
300
400
500
DO-35 Pkg
SOT-23 Pkg
Power Dissipation, P
D
[m W]
Average Tem perature, IO [ C ]
Figure 7. Reverse Recovery Time
vs Reverse Current
TRR - IR 10 mA vs 60 mA
Figure 8. Average Rectified Current (I
F(AV)
)
versus Ambient Temperature (T
A
)
Figure 9. Power Derating Curve
°
°
°
©2004 Fairchild Semic ond uct or Cor porati on Rev. I11
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