1
MRF1002MA MRF1002MBMOTOROLA RF DEVICE DATA
The RF Line
 
 
. . . designed for Class B and C common base amplifier applications in short
and long pulse TACAN, IFF, DME, and radar transmitters.
Guaranteed Performance @ 1090 MHz, 35 Vdc
Output Power = 2.0 Watts Peak
Minimum Gain = 10 dB
100% Tested for Load Mismatch at All Phase Angles with 10:1 VSWR
Industry Standard Package
Nitride Passivated
Gold Metallized, Emitter Ballasted for Long Life and Resistance to Metal
Migration
Internal Input Matching for Broadband Operation
Circuit board photomaster available upon request by contacting
RF Tactical Marketing in Phoenix, AZ.
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector–Emitter Voltage VCEO 20 Vdc
Collector–Base Voltage VCBO 50 Vdc
Emitter–Base Voltage VEBO 3.5 Vdc
Collector Current — Continuous IC250 mAdc
Total Device Dissipation @ TC = 25°C (1)
Derate above 25°CPD7.0
40 Watts
mW/°C
Storage Temperature Range Tstg 65 to +150 °C
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction to Case (2) RθJC 25 °C/W
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(IC = 5.0 mAdc, IB = 0) V(BR)CEO 20 Vdc
Collector–Emitter Breakdown Voltage
(IC = 5.0 mAdc, VBE = 0) V(BR)CES 50 Vdc
Collector–Base Breakdown Voltage
(IC = 5.0 mAdc, IE = 0) V(BR)CBO 50 Vdc
Emitter–Base Breakdown Voltage
(IE = 1.0 mAdc, IC = 0) V(BR)EBO 3.5 Vdc
Collector Cutoff Current
(VCB = 35 Vdc, IE = 0) ICBO 0.5 mAdc
ON CHARACTERISTICS
DC Current Gain
(IC = 100 mAdc, VCE = 5.0 Vdc) hFE 10 100
NOTES: (continued)
1. These devices are designed for RF operation. The total device dissipation rating applies only when the device is operated as RF amplifiers.
2. Thermal Resistance is determined under specified RF operating conditions by infrared measurement techniques.
Order this document
by MRF1002MA/D

SEMICONDUCTOR TECHNICAL DATA

2.0 W (PEAK), 9601215 MHz
MICROWAVE POWER
TRANSISTORS
NPN SILICON
CASE 332–04, STYLE 1
MRF1002MA
CASE 332A–03, STYLE 1
MRF1002MB
Motorola, Inc. 1994
REV 6
MRF1002MA MRF1002MB
2MOTOROLA RF DEVICE DATA
ELECTRICAL CHARACTERISTICS — continued (TC = 25°C unless otherwise noted.)
Characteristic Symbol Min Typ Max Unit
DYNAMIC CHARACTERISTICS
Output Capacitance
(VCB = 35 Vdc, IE = 0, f = 1.0 MHz) Cob 2.5 5.0 pF
FUNCTIONAL TESTS (Pulse Width = 10 µs, Duty Cycle = 1.0%)
Common–Base Amplifier Power Gain
(VCC = 35 Vdc, Pout = 2.0 W pk, f = 1090 MHz) GPB 10 12 dB
Collector Efficiency
(VCC = 35 Vdc, Pout = 2.0 W pk, f = 1090 MHz) η40 45 dB
Load Mismatch
(VCC = 35 Vdc, Pout = 2.0 W, f = 1090 MHz,
VSWR = 10:1 All Phase Angles)
ψNo Degradation in Power Output
Figure 1. 1090 MHz Test Circuit
C1, C3 — 220 pF Chip Capacitor, 100 mil ATC
C2 — 20 µF/50 Vdc Electrolytic
C4 — 0.1 µF Erie Redcap
L1, L2 — 2 Turns #18 AWG, 1/8 ID
Z1–Z14 — Distributed Microstrip Elements, See Photomaster
Board Material — 0.031 Thick Teflon–Fiberglass,
Board Material — εr = 2.56
RF
INPUT RF
OUTPUT
C1
Z13
C2 C3 C4
+
35 Vdc
+
L1
DUT
Z1
Z2 Z5
Z4 Z7
Z3 Z6
Z8 Z11 Z14
Z9 Z12
Z10
3
MRF1002MA MRF1002MBMOTOROLA RF DEVICE DATA
Figure 2. Output Power versus Input Power Figure 3. Output Power versus Frequency
Figure 4. Output Power versus Supply Voltage Figure 5. Power Gain versus Frequency
Figure 6. Series Equivalent Input/Output Impedance
f
MHz Zin
Ohms
ZOL*
Ohms
Pout = 2.0 W pk
960
1090
1215
15.5 + j16.5
15 + j20
14 + j27
20 + j32.5
25 + j34
33.5 + j42.5
VCC = 35 Vdc,
tP = 10 µs, D = 1.0%
ZOL* = Conjugate of the optimum load impedance into which
ZOL* = the device output operates at a given output power,
ZOL* = voltage, and frequency.
ZOL*
Ohms
Pin = 0.2 W pk
25 + j21
31 + j26
37 + j32.5
P , OUTPUT POWER (W pk)
out
3
400 Pin, INPUT POWER (mW pk)
2.5
2
1.5
1
0.5 80 120 160 200
1.09 GHz
f = 0.96 GHz
1.215 GHz
VCC = 35 V
tP = 10
µ
s
D = 1%
P , OUTPUT POWER (W pk)
out
3
960
2.5
2
1.5
1
0.5
f, FREQUENCY (MHz)
1090 1215
Pin = 200 mW pk
160 mW pk
120 mW pk
80 mW pk
VCC = 35 V
tP = 10
µ
s
D = 1%
P , OUTPUT POWER (W pk)
out
0VCC, SUPPLY VOLTAGE (V)
2
1.5
1
0.5
05 10 15 20 25 30 35 40
tP = 10
µ
s
D = 1%
f = 1090 MHz
Pin = 200 mW pk 125 mW pk
100 mW pk
75 mW pk
GPB, POWER GAIN (dB)
960
15
f, FREQUENCY (MHz)
1090 1215
14
13
12
11
10
Pout = 2 W pk
VCC = 35 V
tP = 10
µ
s
D = 1%
COORDINATES IN OHMS
+j50
+j100
+j150
+j250
+j500
j500
j250
j150
j100
j50
j25
j10
0
+j10
+j25
Zin
25 50 100 150 250 50010
f = 960 MHz 1090
1215
ZOL* (Pin = 0.2 W pk)
1090 1215
960 1215
1090
ZOL* (Pout = 2 W pk)
f = 960 MHz
MRF1002MA MRF1002MB
4MOTOROLA RF DEVICE DATA
Figure 7. Typical Long Pulse Performance
Pout = 2 W pk
VCC = 35 V
tP = 1 ms
D = 10%
f = 1090 MHz
5
MRF1002MA MRF1002MBMOTOROLA RF DEVICE DATA
PACKAGE DIMENSIONS
CASE 332–04
ISSUE D
MRF1002MA
NOTES:
1. DIMENSION K APPLIES TWO PLACES.
2. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1973.
STYLE 1:
PIN 1. BASE
2. EMITTER
3. BASE
4. COLLECTOR
SEATING
PLANE
–T–
K
M
L
D
A
4
13
2
8–32 UNC 2A
F
H
E
UC
N
–B–
J
M
0.76 (0.030) B M
T
DIM MIN MAX MIN MAX
INCHESMILLIMETERS
A6.86 7.62 0.270 0.300
B6.10 6.60 0.240 0.260
C16.26 16.76 0.640 0.660
D4.95 5.21 0.195 0.205
E1.40 1.65 0.055 0.065
F2.67 4.32 0.105 0.170
H1.40 1.65 0.055 0.065
J0.08 0.18 0.003 0.007
K15.24 ––– 0.600 –––
L2.41 2.67 0.095 0.105
M45 NOM 45 NOM
N4.97 6.22 0.180 0.245
U2.92 3.68 0.115 0.145
_ _
CASE 332A–03
ISSUE D
MRF1002MB
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
STYLE 1:
PIN 1. BASE
2. EMITTER
3. BASE
4. COLLECTOR
K
F
D
SEATING
1
4
3
2
PLANE
HAJ
C
DIM MIN MAX MIN MAX
MILLIMETERSINCHES
A0.270 0.290 6.86 7.36
C0.115 0.135 2.93 3.42
D0.195 0.205 4.96 5.20
F0.095 0.105 2.42 2.66
H0.050 0.070 1.27 1.77
J0.003 0.007 0.08 0.17
K0.600 ––– 15.24 –––
MRF1002MA MRF1002MB
6MOTOROLA RF DEVICE DATA
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the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit,
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MRF1002MA/D
*MRF1002MA/D*