Rev.4.00, Jul.15.2003, page 1 of 9
HAT2139H
Silicon N Channel Power MOS FET
Power Switching REJ03G0055-0400Z
(Previous ADE-208-1580A(Z))
Rev.4.00
Jul.15.2003
Features
• Capable of 7 V gate drive
• Low drive current
• High density mounting
• Low on-resistance
RDS(on) = 9 mΩ typ. (at VGS = 10 V)
Outline
LFPAK
1234
5
1, 2, 3 Source
4 Gate
5 Drain
G
D
SSS
4
123
5
HAT2139H
Rev.4.00, Jul.15.2003, page 2 of 9
Absolute Maximum Ratings
(Ta = 25°C)
Item Symbol Ratings Unit
Drain to source voltage VDSS 40 V
Gate to source voltage VGSS ±20 V
Drain current ID20 A
Drain peak current ID(pulse)Note1 80 A
Body-drain diode reverse drain current IDR 20 A
Avalanche current IAP Note 3 10 A
Avalanche energy EAR Note 3 8mJ
Channel dissipation Pch Note2 15 W
Channel temperature Tch 150 °C
Storage temperature Tstg –55 to +150 °C
Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1%
2. Tc = 25°C
3. Value at Tch = 25°C, Rg ≥ 50 Ω
HAT2139H
Rev.4.00, Jul.15.2003, page 3 of 9
Electrical Characteristics
(Ta = 25°C)
Item Symbol Min Typ Max Unit Test Conditions
Drain to source breakdo wn voltage V(BR)DSS 40 — — V ID = 10 mA, VGS = 0
Gate to source breakdown voltage V(BR)GSS ±20 — — V IG = ±100 µA, VDS = 0
Gate to source leak current IGSS ——± 10µAV
GS = ±16 V, VDS = 0
Zero gate voltage drai n current IDSS ——1 µAV
DS = 40 V, VGS = 0
Gate to source cutoff voltage VGS(off) 2.0 — 3.5 V VDS = 10 V, I D = 1 mA
Static drain to source on state RDS(on) — 9.0 11.5 mΩID = 10 A, VGS = 10 V Note4
resistance RDS(on) — 11.0 15.0 mΩID = 10 A, VGS = 7 V Note4
Forward transfer admittance |yfs|1525—S I
D = 10 A, VDS = 10 V Note4
Input capacitance Ciss — 2000 — pF VDS = 10 V
Output capacitance Coss — 290 — pF VGS = 0
Reverse transfer capacitance Crss — 175 — pF f = 1 MHz
Total gate charge Qg — 30 — nc VDD = 10 V
Gate to source charge Qgs — 8 — nc VGS = 10 V
Gate to drain charge Qgd — 5 — nc ID = 20 A
Turn-on delay time td(on) —17—nsV
GS = 10 V, ID = 10 A
Rise time tr—23—nsV
DD ≅ 10 V
Turn-off delay time td(off) —58—nsR
L = 1.0 Ω
Fall time tf— 10 — ns Rg = 4.7 Ω
Body–drain diode forward voltage VDF — 0.83 1.08 V IF = 20 A, VGS = 0 Note4
Body–drain diode reverse rec overy
time trr — 50 — ns IF = 20 A, VGS = 0
diF/ dt = 50 A/ µs
Notes: 4. Pulse test
HAT2139H
Rev.4.00, Jul.15.2003, page 4 of 9
Main Characteristics
Drain to Source Voltage V (V)
DS
Drain Current I (A)
D
Typical Output Characteristics
Gate to Source Voltage V (V)
GS
Drain Current I (A)
D
Typical Transfer Characteristics
20
16
12
8
4
0246810
20
16
12
8
4
02468
1
0
Tc = 75°C25°C
-25°C
V = 10 V
Pulse Test
DS
10 V
4.5 V
3.8 V
4.2 V
VGS = 3.5 V
4.0V
Pulse Test
Drain to Source Voltage VDS (V)
Drain Current ID (A)
Maximum Safe Operation Area
100
1
10
1000
0.1
0.1 11010
0
Tc = 25°C
1 shot Pulse
PW = 10 ms
10 µs
100 µs
Operation in
this area is
limited by RDS(on)
DC Operation
1 ms
Channel Dissipation Pch (W)
Case Temperature Tc (˚C)
Power vs. Temperature Derating
40
30
20
10
050 100 150 200
HAT2139H
Rev.4.00, Jul.15.2003, page 5 of 9
Gate to Source Voltage V
GS
(V)
Drain to Source Voltage V
DS(on)
(mV)
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
Drain Current I
D
(A)
Drain to Source On State Resistance
R
DS(on)
(mΩ)
Static Drain to Source on State Resistanc
vs. Drain Current
Case Temperature Tc (°C)
Static Drain to Source on State Resistance
R
DS(on)
(mΩ)
Static Drain to Source on State Resistance
vs. Temperature
Forward Transfer Admittance |yfs| (S)
Drain Current I
D
(A)
Forward Transfer Admittance vs.
Drain Current
20
10
2
5
130
35
20
25
30
15
10
5
-25 0 25 50 75 100 125 150
0
11010
0
3
100
50
I
D
= 10 A
I
D
= 2 A, 5 A, 10 A
V
GS
= 7 V
10 V
Pulse Test
0.01 0.1 110 10
0
10
1
0.1
0.01
100
400
300
200
100
04 8 12 16 20
Pulse Test
I
D
= 10 A
2 A
5 A
2 A, 5 A
V = 7 V
GS
10 V
Pulse Test
V
DS
= 10 V
Pulse Test
Tc = -25°C
75°C
25°C
HAT2139H
Rev.4.00, Jul.15.2003, page 6 of 9
Reverse Drain Current I
DR
(A)
Reverse Recovery Time trr (ns)
Body-Drain Diode Reverse
Recovery Time
Capacitance C (pF)
Drain to Source Voltage V
DS
(V)
Typical Capacitance vs.
Drain to Source Voltage
Drain Current I
D
(A)
Switching Time t (ns)
Switching Characteristics
0.1 0.3 1 3 10 30
100
20
50
10 01020304
0
10000
3000
1000
300
100
Ciss
Coss
Crss
V
GS
= 0
f = 1 MHz
1000
100
30
300
10
1
3
di/dt = 50 A/µs
V
GS
= 0, Ta = 25°C
0.3 1 3 10 30 10
0
0.1
100
50
40
30
20
10
0
20
16
12
8
4
10 20 30 40 50
0
I
D
= 20 A V
GS
V
DS
V
DD
= 25 V
10 V
5 V
V
DD
= 25 V
10 V
5 V
Gate Charge Qg (nc)
Drain to Source Voltage V
DS
(V)
Gate to Source Voltage V
GS
(V)
Dynamic Input Characteristics
tf
tr
td(off)
td(on)
V
GS
= 10 V , V
DS
= 10 V
Rg = 4.7 , duty < 1 %
Ω
HAT2139H
Rev.4.00, Jul.15.2003, page 7 of 9
Source to Drain Voltage V
SD
(V)
Reverse Drain Current I
DR
(A)
Reverse Drain Current vs.
Source to Drain Voltage
D. U. T
Rg
I
Monitor
AP
V
Monitor
DS
V
DD
50Ω
Vin
15 V
0
I
D
V
DS
I
AP
V
(BR)DSS
L
V
DD
E
AR
= L • I
AP2
•
2
1V
V - V
DSS
DSS DD
Avalanche Test Circuit Avalanche Waveform
20
16
12
8
4
00.4 0.8 1.2 1.6 2.0
Pulse Test
V
GS
= 0.5 V
10 V
5 V
10
8
6
4
2
25 50 75 100 125 150
0
Channel Temperature Tch (°C)
Repetitive Avalanche Energy E
AR
(mJ)
Maximum Avalanche Energy vs.
Channel Temperature Derating
I
AP
= 10 A
V
DD
= 15 V
duty < 0.1 %
Rg > 50 Ω
HAT2139H
Rev.4.00, Jul.15.2003, page 8 of 9
Vin Monitor
D.U.T.
Vin
10 V
R
L
V
= 10 V
DS
tr
td(on)
Vin
90% 90%
10%
10%
Vout
td(off)
Vout
Monitor 90%
10%
t
f
Switching Time Test Circuit Switching Time Waveform
Rg
Pulse Width PW (s)
Normalized Transient Thermal Impedance vs. Pulse Width
Normalized Transient Thermal Impedance
s (t)
γ
3
1
0.3
0.1
0.03
0.01
10 µ 100 µ 1 m 10 m 100 m 1 10
Tc = 25°C
D = 1
0.5
0.2
0.1
0.05
0.02
0.01
1shot pulse
DM
P
PW
T
D = PW
T
θch - c(t) = γ s (t) • θch - c
θch - c = 8.33°C/ W, Tc = 25°C
HAT2139H
Rev.4.00, Jul.15.2003, page 9 of 9
Package Dimensions
0.25
M
1.3 Max
1.0
3.95
1.1 Max
4.9
5.3 Max
4.0 ± 0.2
14
5
4.2
3.3
0˚ – 8˚
0.07 +0.03
–0.04
*0.20+0.05
–0.03
0.6 +0.25
–0.20
0.25 +0.05
–0.03
6.1 +0.1
–0.3
1.27
*0.40 ± 0.06
0.75 Max
0.10
Package Code
JEDEC
JEITA
Mass
(reference value)
LFPAK
—
—
0.080 g
As of January, 2003
Unit: mm
*Ni/Pd/Au plating
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