TPS850
2007-10-01
1
TOSHIBA Photo-IC Silicon Epitaxial Planar
TPS850
Mobile Phones, PHS
Notebook PCs, PDAs
Video Cameras, Digital Still Cameras
Other Equipment Requiring Luminosity Adjustment
The TPS850 is a linear-output photo-IC which incorporates a photodiode
and a current amp circuit in a single chip. This photo-IC is current
output type, so can set up output voltage freely by arbitrary load
resistance.
High sensitivity: IL = 230 μA
@EV = 100 lx (typ.) Using the fluorescent light
Little fluctuation in light current
: Width range = x1 to x1.6 (typ. ±25%)
Output linearity of illuminance is excellent
Open-emitter output
Compact and light surface-mount package
Absolute Maximum Ratings (Ta = 25°C)
Characteristics Symbol Rating Unit
Supply voltage VCC 0.5 to 7 V
Output voltage VOUT
<
=
VCC V
Light current IL 10 mA
Permissible power dissipation P 70 mW
Operating temperature range Topr 30 to 85 °C
Storage temperature range Tstg 40 to 100 °C
Soldering temperature range (10 s)
(Note 1) Tsol 260 °C
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings and the operating ranges.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: The reflow time and the recommended temperature profile are shown in the section entitled Handling
Precautions.
TOSHIBA
Weight: 0.017 g (typ.)
TPS850
2007-10-01
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Electrical and Optical Characteristics (Ta = 25°C)
Characteristics Symbol Test Condition Min Typ. Max Unit
Supply voltage VCC 2.7 5.5 V
Supply current ICC VCC = 3 V, EV = 1000 lx,
RL = 250 Ω (Note 2) 4 mA
Light current (1) IL (1) VCC = 3 V, EV = 100 lx
(Note 2, 4) 300
Light current (2) IL (2) VCC = 3 V, EV = 10 lx
(Note 3, 4) 18 23 30
Light current (3) IL (3) VCC = 3 V, EV = 100 lx
(Note 3, 4) 180 230 300
μA
Light current ratio (3)
L
I
(1)
L
I
1.3 1.7
Dark current ILEAK VCC = 3.3 V, EV = 0 0.5 μA
Saturation output voltage Vo VCC = 3 V, RL = 75 kΩ,
EV = 100 lx (Note 3) 2.2 2.35 V
Peak sensitivity wavelength λp 640 nm
Rise time tr 0.2 1
Switching time
Fall time tf
VCC = 3 V, RL = 5 kΩ,
(Note 5) 0.35 2
ms
Note 2: CIE standard A light source is used (color temperature = 2856K, approximated incandescence light).
Note 3: Fluorescence light is used as light source. However, white LED is substituted in a mass-production process.
Note 4: Light current measurement circuit
Note 5: Rise time/fall time measurement method
A
OUT
VCC
IL
TPS850
Light
source
OUT
VCC
White LED
Pulse drive
TPS850
RL
tf tr
IF
1.5 V
VOUT
GND
90%
10%
TPS850
2007-10-01
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Package Dimensions
Weight: 0.017 g (typ.)
Block Diagram
Current
amp
3 VCC
4 OUT
1 GND
2 GND
TPS850
2007-10-01
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Handling Precautions
At power-on in darkness, the internal circuit takes about 50 ms to stabilize. During this period the output signal
is unstable and may change. Please take this into account.
Moisture-Proof Packing
(1) To avoid moisture absorption by the resin, the product is packed in an aluminum envelope with silica
gel.
(2) Since the optical characteristics of the device can be affected during soldering by vaporization
resulting from prior absorption of moisture and they should therefore be stored under the following
conditions:
Temperature: 5°C to 30°C, Relative humidity: 60% (max), Time: 168 h
(3) Baking is required if the devices have been store unopened for more than six months or if the
aluminum envelope has been opened for more than 168 h.
These devices are packed on tapes; hence, please avoid baking at high temperature.
Recommended baking conditions: 60°C for 12 h or longer
Mounting Precautions
(1) Do not apply stress to the resin at high temperature.
(2) The resin part is easily scratched, so avoid friction with hard materials.
(3) When installing the assembly board in equipment, ensure that this product does not come into
contact with other components.
Mounting Methods
(1) Reflow soldering
Package surface temperature: 260°C (max)
Please perform reflow soldering using the following reference temperature profile.
Perform reflow soldering no more than twice.
Please perform the first reflow soldering within 168 h after opening the package with reference to
the above temperature profile.
Second reflow soldering
In case of second reflow soldering, it should be performed within 168 h after first reflow under the
above conditions.
Storage conditions before second reflow soldering: 30°C, 60% RH or lower
Do not perform flow soldering.
Make any necessary soldering correction manually.
(do not do this more than once for any given pin.)
Temperature: no more than 350°C (25 W for soldering iron)
Time: within 5 s
30 s to 50 s Heating part
Time (s)
60 s to 120 s
Temperature (°C)
260°C max
230°C
190°C
180°C Preheating part
TPS850
2007-10-01
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(2) Recommended soldering pattern
(3) Cleaning conditions
When cleaning is required after soldering
Chemicals: AK225 alcohol
Temperature and time: 50°C × 30 s or : 30°C × 3 minutes
Ultrasonic cleaning: 300 W or less
Packing Specification
(1) Packing quantity
Reel (minimum packing quantity) 3000 devices
Carton 5 reels (15000 devices)
(2) Packing format
An aluminum envelope containing silica gel and reels is deaerated and sealed.
Pack shock-absorbent materials around the aluminum envelopes in the cartons to cushion them.
Carton specification
Carton dimensions
(W) 81 mm × (L) 280 mm × (H) 280 mm
1.6 1.6 1.3
0.95 0.95 0.6
Unit: mm
Label
TPS850
2007-10-01
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4.0 ± 0.1
φ1.5 + 0.1
0 2.0 ± 0.05
A
A’
Feed direction
Device Orientation
4.0 ± 0.1
0.2 ± 0.05
1.3 ± 0.1
A-A’
B-B’
max 6°
2.8 ± 0.1
max 6°
3.6 ± 0.1
8.0 ± 0.2
1.75 ± 0.1
max 6° max 6°
3.5 ± 0.1 (2.75)
BB
Tape Packing Specifications
(1) Reel dimensions
(2) Tape dimensions
(3) Packing quantity: 3000/reel
2 ± 0.5
φ180 + 0
4
φ21 ± 0.3
φ13 ± 0.5
Label
φ60
9 ± 0.3
11.4 ± 1
TPS850
2007-10-01
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P – Ta
ILEAK – Ta (typ.)
0
0
80
20 40 60 80 100
60
40
20
10
70
50
30
Relative light current
Relative light current
Ambient temperature Ta (°C)
Power dissipation P (mW)
Ambient temperature Ta (°C)
Dark current ILEAK (μA)
Illuminance EV (lx)
IL – EV (typ.)
Light current IL (μA)
Ambient temperature Ta (°C)
Relative IL – Ta (typ.)
Supply voltage VCC (V)
Relative IL – VCC (typ.)
Illuminance EV (lx)
Vo EV (typ.)
Output voltage Vo (V)
10
0.001
20
VCC = 3 V
Please refer to Figure 2.
1
0.1
0.01
40 60 80 100
Ta = 25°C
Please refer to Figure 1.
0
2
1.6
7
3 4 5 6
1.2
0.8
0.4
1
1
10000
10 100 1000 10000
1000
100
10 Ta = 25°C
VCC = 3 V
Please refer to Figure 1.
A light source
Fluorescent light
1.4
0.6
40
1.2
1.0
0.8
20 0 20 40 60 80 100
VCC = 3 V
Please refer to Figure 1.
Fluorescent light
A light source
10 100 1000 10000
10
0.0001
1
1
0.1
0.01
0.001
Ta
=
25°C
VCC = 3 V
Please refer to Figure 4.
Fluorescent light RL = 250 Ω
Fluorescent light RL = 5 kΩ
A light source RL = 250 Ω
A light source RL = 5 kΩ
TPS850
2007-10-01
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Illuminance EV (lx)
ICC – EV (typ.)
Consumption current ICC (mA)
Load resistance RL (kΩ)
Switching characteristics
(Non-saturating operation) (typ.)
Switching time (μs)
Switching time (μs)
Load resistance RL (kΩ)
Switching characteristics
(Saturating operation) (typ.)
Relative consumption current
Ambient temperature Ta (°C)
Relative ICC – Ta (typ.)
VCC = 3 V
Using the Fluorescent light
RL = 1 kΩ
Please refer to Figure 3.
1.40
0.60
40
1.20
1.00
0.80
20 0 20 40 60 80 100
tf
td
t
r
ts
1
Ta = 25°C
VCC = 3 V
VOUT = 1.5 V
Using the White LED
Please refer to Figure 5.
0.1
0.1 10
1000
100
10
1
300
30
3
0.3
0.3 3
tf
Ta = 25°C
VCC = 3 V
VOUT
>
=
2 V
Using the White LED
Please refer to Figure 5.
1000
0.1
0.1 10
ts
td
t
r
100
10
1
1
300
30
3
0.3
0.3 3
10 100 1000 10000
10
0.001
1
1
0.3
0.03
0.1
3
0.01
0.003
Ta = 25°C
VCC = 3 V
Using the A light source
Please refer to Figure 3.
R
L = 250 Ω
R
L = 1000 Ω
R
L = 5000 Ω
TPS850
2007-10-01
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Measurement Circuits
Spectral response (typ.)
Relative sensitivity
Relative sensitivity
Radiation pattern (typ.)
Wavelength λ (nm)
Ta = 25°C
Luminosity angle
30°
0°
60°
90° 90°
30°
60°
1.00.8 0.6 0.4 0.2 0
80°
70°
50°
40°
20°
10°
70°
80°
50°
40°
20°10°
TPS850
VCC
Figure 4 Output voltage measurement circuit
RLV Vo
Light
TPS850
VCC
OUT
Icc
A
Figure 3 Consumption current measurement circuit
RL
Light
Pulse drive
TPS850
White LED
VCC
OUT
RL
Figure 5 Switching measurement circuit and waveform
Figure 1 Light current measurement circuit
TPS850
VCC
OUT
IL
A
Light
Figure 2 Dark current measurement circuit
TPS850
VCC
OUT
ILEAK
A
tf tr
ts
td
IF
1.5 V
VOUT
GND
90%
10%
0
200
1
1200400 600 800
0.2
0.4
0.6
0.8
1000
Ta = 25°C
TPS850
2007-10-01
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