TELEFUNKEN Semiconductors TLL.440.
Rev. A1: 01.06.1995 1 (7)
Low Current LED in ø 3 mm Tinted Diffused Package
Color Type Technology Angle of Half Intensity
±
ö
High efficiency red TLLR440. GaAsP on GaP
°
Yellow TLLY440. GaAsP on GaP 25
°
Green TLLG440. GaP on GaP
Features
D
Low power consumption
D
High brightness
D
CMOS/MOS compatible
D
Specified at IF = 2 mA
D
Luminous intensity categorized
D
Yellow and green color categorized
94 8488
Applications
Low power DC circuits
TELEFUNKEN Semiconductors
TLL.440.
Rev. A1: 01.06.19952 (7)
Absolute Maximum Ratings
Tamb = 25°C, unless otherwise specified
TLLR440. ,TLLY440. ,TLLG440.
Parameter Test Conditions Type Symbol Value Unit
Reverse voltage VR6 V
DC forward current IF7 mA
Surge forward current tp ≤ 10
m
s IFSM 0.15 A
Power dissipation Tamb ≤ 84
°
C PV20 mW
Junction temperature Tj100
°
C
Operating temperature range Tamb –40 to +100
°
C
Storage temperature range Tstg –55 to +100
°
C
Soldering temperature t ≤ 5 s, 2 mm
from body Tsd 260
°
C
Thermal resistance junction/ambient RthJA 800 K/W
Optical and Electrical Characteristics
Tamb = 25°C, unless otherwise specified
High efficiency red (TLLR440. )
Parameter Test Conditions Type Symbol Min Typ Max Unit
Luminous intensity IF = 2 mA, IVmin/IVmax ≥ 0.5 TLLR4400 IV0.63 1.2 mcd
y
F,Vmin Vmax
TLLR4401 IV1 2 mcd
Dominant wavelength IF = 2 mA
l
d612 625 nm
Peak wavelength IF = 2 mA
l
p635 nm
Angle of half intensity IF = 2 mA ϕ±25 deg
Forward voltage IF = 2 mA VF1.9 2.4 V
Reverse voltage IR = 10
m
A VR6 20 V
Junction capacitance VR = 0, f = 1 MHz Cj50 pF
Yellow (TLLY440. )
Parameter Test Conditions Type Symbol Min Typ Max Unit
Luminous intensity IF = 2 mA, IVmin/IVmax ≥ 0.5 TLLY4400 IV0.63 1.2 mcd
y
F,Vmin Vmax
TLLY4401 IV1 2 mcd
Dominant wavelength IF = 2 mA
l
d581 594 nm
Peak wavelength IF = 2 mA
l
p585 nm
Angle of half intensity IF = 2 mA ϕ±25 deg
Forward voltage IF = 2 mA VF2.4 2.9 V
Reverse voltage IR = 10
m
A VR6 20 V
Junction capacitance VR = 0, f = 1 MHz Cj50 pF
TELEFUNKEN Semiconductors TLL.440.
Rev. A1: 01.06.1995 3 (7)
Green (TLLG440. )
Parameter Test Conditions Type Symbol Min Typ Max Unit
Luminous intensity IF = 2 mA, IVmin/IVmax ≥ 0.5 TLLG4400 IV0.63 1.2 mcd
y
F,Vmin Vmax
TLLG4401 IV1 2 mcd
Dominant wavelength IF = 2 mA
l
d562 575 nm
Peak wavelength IF = 2 mA
l
p565 nm
Angle of half intensity IF = 2 mA ϕ±25 deg
Forward voltage IF = 2 mA VF1.9 2.4 V
Reverse voltage IR = 10
m
A VR6 20 V
Junction capacitance VR = 0, f = 1 MHz Cj50 pF
Typical Characteristics (Tamb = 25
_
C, unless otherwise specified)
020406080
0
5
10
15
20
25
P – Power Dissipation ( mW )
V
Tamb – Ambient Temperature ( °C )
100
95 10048
Figure 1. Power Dissipation vs. Ambient Temperature
020406080
0
2
4
6
8
10
I – Forward Current ( mA )
F
Tamb – Ambient Temperature ( °C )
100
95 10049
Figure 2. Forward Current vs. Ambient Temperature
0.4 0.2 0 0.2 0.4 0.6
95 10060
0.6
0.9
0.8
0°30°
10
°20
°
40°
50°
60°
70°
80°
0.7
1.0
I – Relative Luminous Intensity
v rel
Figure 3. Rel. Luminous Intensity vs. Angular Displacement
01234
0.1
1
10
100
VF – Forward Voltage ( V )
5
95 10050
I – Forward Current ( mA )
F
High Efficiency Red
tp/T=0.001
tp=10
m
s
Figure 4. Forward Current vs. Forward Voltage
TELEFUNKEN Semiconductors
TLL.440.
Rev. A1: 01.06.19954 (7)
0
95 10051
20 40 60 80 100
I – Relative Luminous Intensity
v rel
Tamb – Ambient Temperature ( °C )
High Efficiency Red
IF=2mA
0
0.4
0.8
1.2
1.6
2.0
Figure 5. Rel. Luminous Intensity vs. Ambient Temperature
10 20 50 100 200
0
0.4
0.8
1.2
1.6
2.4
96 11490
500
0.5 0.2 0.1 0.05 0.021
IF(mA)
tp/T
I – Relative Luminous Intensity
v rel
2.0 High Efficiency Red
Figure 6. Rel. Lumin. Intensity vs. Forw. Current/Duty Cycle
0.1 1 10
0.01
0.1
1
10
100
100
95 10061
I – Relative Luminous Intensity
v rel
IF – Forward Current ( mA )
High Efficiency Red
Figure 7. Relative Luminous Intensity vs. Forward Current
590 610 630 650 670
0
0.2
0.4
0.6
0.8
1.2
690
95 10040
I – Relative Luminous Intensity
v rel
l
– Wavelength ( nm )
1.0 High Efficiency Red
Figure 8. Relative Luminous Intensity vs. Wavelength
01234
0.1
1
10
100
VF – Forward Voltage ( V )
5
95 10053
I – Forward Current ( mA )
F
Yellow
tp/T=0.001
tp=10
m
s
Figure 9. Forward Current vs. Forward Voltage
0
0.4
0.8
1.2
1.6
2.0
0
95 10054
20 40 60 80 100
I – Relative Luminous Intensity
v rel
Tamb – Ambient Temperature ( °C )
Yellow
Figure 10. Rel. Luminous Intensity vs. Ambient Temperature
TELEFUNKEN Semiconductors TLL.440.
Rev. A1: 01.06.1995 5 (7)
10 20 50 100 200
0
0.4
0.8
1.2
1.6
2.4
9611590
500
0.5 0.2 0.1 0.05 0.021
IF(mA)
tp/T
I – Relative Luminous Intensity
v rel
2.0 Yellow
Figure 11. Rel. Lumin. Intensity vs. Forw. Current/Duty Cycle
0.1 1 10
0.01
0.1
1
10
100
100
95 10062
I – Relative Luminous Intensity
v rel
IF – Forward Current ( mA )
Yellow
Figure 12. Relative Luminous Intensity vs. Forward Current
550 570 590 610 630
0
0.2
0.4
0.6
0.8
1.2
650
95 10039
I – Relative Luminous Intensity
v rel
l
– Wavelength ( nm )
1.0 Yellow
Figure 13. Relative Luminous Intensity vs. Wavelength
01234
0.1
1
10
100
VF – Forward Voltage ( V )
5
95 10056
I – Forward Current ( mA )
F
Green
tp/T=0.001
tp=10
m
s
Figure 14. Forward Current vs. Forward Voltage
0
0
0.4
0.8
1.2
1.6
95 10057
20 40 60 80 100
I – Relative Luminous Intensity
v rel
Tamb – Ambient Temperature ( °C )
Green
IF=2mA
Figure 15. Rel. Luminous Intensity vs. Ambient Temperature
10 20 50 100 200
0
0.4
0.8
1.2
1.6
2.4
96 11591
500
0.5 0.2 0.1 0.05 0.021
IF(mA)
tp/T
I – Relative Luminous Intensity
v rel
2.0 Green
Figure 16. Rel. Lumin. Intensity vs. Forw. Current/Duty Cycle
TELEFUNKEN Semiconductors
TLL.440.
Rev. A1: 01.06.19956 (7)
0.1 1 10
0.01
0.1
1
10
100
100
95 10059
I – Relative Luminous Intensity
v rel
IF – Forward Current ( mA )
Green
Figure 17. Relative Luminous Intensity vs. Forward Current
520 540 560 580 600
0
0.2
0.4
0.6
0.8
1.2
620
95 10038
I – Relative Luminous Intensity
v rel
l
– Wavelength ( nm )
1.0 Green
Figure 18. Relative Luminous Intensity vs. Wavelength
Dimensions in mm
95 10913
TELEFUNKEN Semiconductors TLL.440.
Rev. A1: 01.06.1995 7 (7)
Ozone Depleting Substances Policy Statement
It is the policy of TEMIC TELEFUNKEN microelectronic GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems
with respect to their impact on the health and safety of our employees and the public, as well as their impact on
the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as
ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and
forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban
on these substances.
TEMIC TELEFUNKEN microelectronic GmbH semiconductor division has been able to use its policy of
continuous improvements to eliminate the use of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
TEMIC can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain
such substances.
We reserve the right to make changes to improve technical design and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each customer
application by the customer. Should the buyer use TEMIC products for any unintended or unauthorized
application, the buyer shall indemnify TEMIC against all claims, costs, damages, and expenses, arising out of,
directly or indirectly, any claim of personal damage, injury or death associated with such unintended or
unauthorized use.
TEMIC TELEFUNKEN microelectronic GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423
