CREAT BY ART
- Low power loss, high efficiency
- Guardring for overvoltage protection
- High surge current capability
- UL Recognized File # E-326243
- Halogen-free according to IEC 61249-2-21 definition
Molding compound, UL flammability classification rating 94V-0
Base P/N with suffix "G" on packing code - halogen-free
Base P/N with prefix "H" on packing code - AEC-Q101 qualified
Terminal: Matte tin plated leads, solderable per JESD22-B102
Meet JESD 201 class 1A whisker test,
with prefix "H" on packing code meet JESD 201 class 2 whisker test
V
RRM
35 45 50 60 90 100 V
V
RMS
24 31 35 42 63 70 V
V
DC
35 45 50 60 90 100 V
I
F(AV)
A
I
RRM
A
dV/dt V/μs
R
θJC O
C/W
T
JO
C
T
STG O
C
Document Number: DS_D1309013 Version: I13
MBRF2035 thru MBRF20100
Taiwan Semiconductor
Isolated Schottk
y
Barrier Rectifiers
FEATURES
- Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
MECHANICAL DATA ITO-220AC
Case: ITO-220AC
Polarity: As marked
Mounting torque: 5 in-lbs maximum
Weight: 1.8 g (approximately)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (T
A
=25℃ unless otherwise noted)
PARAMETER SYMBOL MBRF
2035
MBRF
2045
MBRF
2050
MBRF
2060
MBRF
2090
MBRF
20100 UNIT
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current 20
Peak repetitive forward current
(Rated VR, square wave, 20KHz) I
FRM
40 A
Peak forward surge current, 8.3 ms single half
sine-wave superimposed on rated load I
FSM
150 A
Peak repetitive reverse surge current (Note 1) 1 0.5
V0.75 0.82 0.95
0.65 0.72 0.87
Maximum reverse current @ Rated V
R
T
J
=25 ℃
T
J
=125 ℃I
R
0.2 0.1
Maximum instantaneous forward voltage (Note 2)
I
F
=20A, T
J
=25℃
I
F
=20A, T
J
=125℃
V
F
mA
15 10 5
Storage temperature range - 55 to +150
Note 1: tp = 2.0 μs, 1.0KHz
Note 2: Pulse test with PW=300μs, 1% duty cycle
Voltage rate of change (Rated V
R
)10000
Typical thermal resistance 3
Operating junction temperature range - 55 to +150
CREAT BY ART
PART NO.
Note 1: "xx" defines voltage from 35V (MBRF2035) to 100V (MBRF20100)
PART NO.
MBRF2060
MBRF2060
MBRF2060
(TA=25℃ unless otherwise noted)
Document Number: DS_D1309013 Version: I13
MBRF2035 thru MBRF20100
Taiwan Semiconductor
ORDERING INFORMATION
AEC-Q101
QUALIFIED PACKING CODE GREEN COMPOUND
CODE PACKAGE PACKING
MBRF20xx
(Note 1) Prefix "H" C0 Suffix "G" ITO-220AC 50 / Tube
EXAMPLE
PREFERRED P/N AEC-Q101
QUALIFIED PACKING CODE GREEN COMPOUND
CODE DESCRIPTION
MBRF2060 C0 C0
MBRF2060 C0G C0 G Green compound
MBRF2060HC0 H C0 AEC-Q101 qualified
RATINGS AND CHARACTERISTICS CURVES
0
4
8
12
16
20
24
50 60 70 80 90 100 110 120 130 140 150
AVERAGE FORWARD CURRENT (A)
CASE TEMPERATURE (oC)
FIG.1 FORWARD CURRENT DERATING CURVE
RESISTIVE OR
INDUCTIVELOAD
WITH HEATSINK
0
25
50
75
100
125
150
0 1 10 100
PEAK FORWARD SURGE CURRENT (A)
NUMBER OF CYCLES AT 60 Hz
FIG. 2 MAXIMUM NON-REPETITIVE FORWARD
SURGE CURRENT PER LEG
8.3ms Single Half Sine Wave
JEDEC Method
0.01
0.1
1
10
100
0 20 40 60 80 100 120 140
INSTANTANEOUS REVERSE CURRENT (mA)
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
FIG. 4 TYPICAL REVERSE CHARACTERISTICS
PER LEG
TJ=125℃
TJ=25℃
0.01
0.1
1
10
100
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2
INSTANTANEOUS FORWARD CURRENT (A)
FORWARD VOLTAGE (V)
FIG. 3 TYPICAL FORWARD CHARACTERISTICS
PER LEG
TJ=125℃
Pulse Width=300μs
1% Duty Cycle
TJ=25℃
MBRF2035-2045
MBRF2050-2060
MBRF2090-20100
CREAT BY ART
Min Max Min Max
A 4.30 4.70 0.169 0.185
B 2.50 3.10 0.098 0.122
C 2.30 2.90 0.091 0.114
D 0.46 0.76 0.018 0.030
E 6.30 6.90 0.248 0.272
F 9.60 10.30 0.378 0.406
G 3.00 3.40 0.118 0.134
H 0.00 1.60 0.000 0.063
I 0.95 1.45 0.037 0.057
J 0.50 0.90 0.020 0.035
K 2.40 3.20 0.094 0.126
L 14.80 15.50 0.583 0.610
M - 4.10 - 0.161
N - 1.80 - 0.071
O 12.60 13.80 0.496 0.543
P 4.95 5.20 0.195 0.205
P/N = Specific Device Code
G = Green Compound
YWW = Date Code
F = Factory Code
Document Number: DS_D1309013 Version: I13
MARKING DIAGRAM
MBRF2035 thru MBRF20100
Taiwan Semiconductor
PACKAGE OUTLINE DIMENSIONS
DIM. Unit (mm) Unit (inch)
100
1000
10000
0.1 1 10 100
JUNCTION CAPACITANCE (pF) A
REVERSE VOLTAGE (V)
FIG. 5 TYPICAL JUNCTION CAPACITANCE
PER LEG
f=1.0MHz
Vsig=50mVp-p
MBRF2035-2060
MBRF2090-20100
0.1
1
10
100
0.01 0.1 1 10 100
TRANSIENT THERMAL
IMPEDANCE (℃/W)
T-PULSE DURATION(s)
FIG. 6 TYPICAL TRANSIENT THERMAL IMPEDANCE
PER LEG
CREAT BY ART
assumes no responsibility or liability for any errors inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied,to
any intellectual property rights is granted by this document. Except as provided in TSC's terms and conditions of
sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty,
relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose,
merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or seling these products for use in such applications do so at their own risk and agree to fully
indemnify TSC for any damages resulting from such improper use or sale.
Document Number: DS_D1309013 Version: I13
MBRF2035 thru MBRF20100
Taiwan Semiconductor
Notice
Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf,
