JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-92 Plastic-Encapsulate Transistors
BC350 TRANSISTOR (PNP)
FEATURES
Power dissipation
P
CM : 0.3 W（Tamb=25℃）
Collector current
I
CM: -0.1 A
Collector-base voltage
V
(BR)CBO : -50 V
Operating and storage junction temperature range
T
J，Tstg: -55℃ to +150℃
ELECTRICAL CHARACTERISTICS（Tamb=25℃ unless otherwise specified）
Parameter Symbol
Test conditions MIN TYP MAX UNIT
Collector-base breakdown voltage V(BR)CBO Ic= -100μA ， I
E=0 -50 V
Collector-emitter breakdown voltage V(BR)CEO IC= -1mA, IB=0 -45 V
Emitter-base breakdown voltage V(BR)EBO IE= -100μA， I
C=0 -5 V
Collector cut-off current ICBO VCB=-50V, IE=0 -0.1
μA
Collector cut-off current ICEO VCE=-35V, IB=0 -0.1
μA
Emitter cut-off current IEBO VEB= -3V, IC=0 -0.1 μA
DC current gain hFE VCE=-5 V, IC= -2mA 40 450
Collector-emitter saturation voltage VCEsat IC= -10mA, IB= -1mA -0.3 V
Base-emitter saturation voltage VBEsat IC= -10mA, IB= -1mA -1 V
Transition frequency f
T VCE=-5V,IC=-10mA,
f=30MHz 125 MHz
1 2 3
TO—92
1.EMITTER
2. BASE
3. COLLECTOR
D
b
E
A
A1
C
L
D1
e
e1
TO-92 PACKAGE OUTLINE DIMENSIONS
Symbol
A
A1
b
c
D
D1
E
e
e1
L
Ö
Min
3.300
1.100
0.380
0.360
4.400
3.430
4.300
2.440
14.100
0.000
Max
3.700
1.400
0.550
0.510
4.700
4.700
2.640
14.500
1.600
0.380
Min
0.130
0.043
0.015
0.014
0.173
0.135
0.169
0.096
0.555
0.000
Max
0.146
0.055
0.022
0.020
0.185
0.185
0.104
0.571
0.063
0.015
Dimensions In Millimeters Dimensions In Inches
0.050TYP
1.270TYP
φ
