Semiconductor Components Industries, LLC, 2004
July, 2004 − Rev. 3 1Publication Order Number:
BCW68GLT1/D
BCW68GLT1
General Purpose Transistor
PNP Silicon
Features
Pb−Free Package is Available
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector−Emitter Voltage VCEO −45 Vdc
Collector−Base Voltage VCBO −60 Vdc
Emitter−Base Voltage VEBO −5.0 Vdc
Collector Current − Continuous IC−800 mAdc
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits
are exceeded, device functional operation is not implied, damage may occur
and reliability may be affected.
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation FR−5 Board
(Note 1) TA = 25°C
Derate above 25°C
PD225
1.8
mW
mW/°C
Thermal Resistance,
Junction−to−Ambient RJA 556 °C/W
Total Device Dissipation
Alumina Substrate (Note 2)
TA = 25°C
Derate above 25°C
PD300
2.4
mW
mW/°C
Thermal Resistance,
Junction−to−Ambient RJA 417 °C/W
Junction and Storage Temperature TJ, Tstg 55 to +150 °C
1. FR−5 = 1.0 0.75 0.062 in.
2. Alumina = 0.4 0.3 0.024 in 99.5% alumina.
SOT−23
CASE 318
STYLE 6
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DG = Specific Device Code
M = Date Code
MARKING DIAGRAM
12
3
Device Package Shipping
ORDERING INFORMATION
BCW68GLT1 SOT−23 3000 / Tape & Reel
BCW68GLT1G SOT−23
(Pb−Free) 3000 / Tape & Reel
For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
DG M
3000 / Tape & Reel
COLLECTOR
3
1
BASE
2
EMITTER
BCW68GLT1
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2
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector−Emitter Breakdown Voltage (IC = −10 mAdc, I B = 0) V(BR)CEO −45 Vdc
Collector−Emitter Breakdown Voltage (IC = −10 Adc, VEB = 0) V(BR)CES −60 Vdc
Emitter−Base Breakdown Voltage (IE = −10 Adc, IC = 0) V(BR)EBO −5.0 Vdc
Collector Cutoff Current
(VCE= −45 Vdc, IE = 0)
(VCE= −45 Vdc, IB = 0, TA = 150°C)
ICES
−20
−10 nAdc
Adc
Emitter Cutoff Current (VEB = −4.0 Vdc, IC = 0) IEBO −20 nAdc
ON CHARACTERISTICS
DC Current Gain
(IC = −10 mAdc, VCE = −1.0 Vdc)
(IC = −100 mAdc, VCE = −1.0 Vdc)
(IC = −300 mAdc, VCE = −1.0 Vdc)
hFE 120
160
60
400
Collector−Emitter Saturation Voltage (IC = −300 mAdc, IB = −30 mAdc) VCE(sat) −1.5 Vdc
Base−Emitter Saturation Voltage (IC = −500 mAdc, IB = −50 mAdc) VBE(sat) −2.0 Vdc
SMALL−SIGNAL CHARACTERISTICS
Current−Gain − Bandwidth Product
(IC = −20 mAdc, VCE = −10 Vdc, f = 100 MHz) fT100 MHz
Output Capacitance
(VCB= −10 Vdc, IE = 0, f = 1.0 MHz) Cobo 18 pF
Input Capacitance
(VEB= −0.5 Vdc, IC = 0, f = 1.0 MHz) Cibo 105 pF
Noise Figure
(IC= −0.2 mAdc, V CE = −5.0 Vdc, RS = 1.0 k, f = 1.0 kHz, BW = 200 Hz) NF 10 dB
BCW68GLT1
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3
PACKAGE DIMENSIONS
SOT−23 (TO−236)
CASE 318−08
ISSUE AJ
mm
inches
SCALE 10:1
0.8
0.031
0.9
0.035
0.95
0.037
0.95
0.037
2.0
0.079
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
SOLDERING FOOTPRINT*
DJ
K
L
A
C
BS
H
GV
3
12
DIM
AMIN MAX MIN MAX
MILLIMETERS
0.1102 0.1197 2.80 3.04
INCHES
B0.0472 0.0551 1.20 1.40
C0.0350 0.0440 0.89 1.11
D0.0150 0.0200 0.37 0.50
G0.0701 0.0807 1.78 2.04
H0.0005 0.0040 0.013 0.100
J0.0034 0.0070 0.085 0.177
K0.0140 0.0285 0.35 0.69
L0.0350 0.0401 0.89 1.02
S0.0830 0.1039 2.10 2.64
V0.0177 0.0236 0.45 0.60
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH THICKNESS. MINIMUM LEAD
THICKNESS IS THE MINIMUM THICKNESS OF
BASE MATERIAL.
4. 318−03 AND −07 OBSOLETE, NEW STANDARD
318−08.
STYLE 6:
PIN 1. BASE
2. EMITTER
3. COLLECTOR
BCW68GLT1
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4
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BCW68GLT1/D
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