MBR730 – MBR750
Document number: DS23007 Rev. 11 - 4
1 of 4
www.diodes.com
July 2015
© Diodes Incorporated
MBR730 – MBR750
OBSOL ETE – PA RT DI S CONT INU E D
PART OBSOLETE
7.5A SCHOTTKY BARRIER RECTIFIER
Features
Guard Ring Die Construction for Transient Protection
Low Power Loss, High Efficiency
High Surge Capability
High Current Capability and Low Forward Voltage Drop
For Use in Low Voltage, High Frequency Inverters, Free
Wheeling, and Polarity Protection Application
Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
Mechanical Data
Case: TO220AC
Case Material: Molded Plastic. UL Flammability Classification
Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020C
Terminals: Finish – Tin. Solderable per MIL-STD-202, Method 208
Polarity: See Diagram
Marking: Type Number
Weight: 2.3 grams (Approximate)
Ordering Information (Note 3)
Case
Packaging
TO220AC
50/Tube
* xx = Device type, e.g. MBR750
Notes: 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
Pb
MBR7xx
YYWW AB
MBR7xx = Product Type Marking Code
AB = Foundry and Assembly Code
YYWW = Date Code Marking
YY = Last two digits of year (ex: 10 = 2010)
WW = Week (01 - 53)
Package Pin Out
Configuration
Base
Cathode
Cathode Anode
1 3
1
MBR730 – MBR750
Document number: DS23007 Rev. 11 - 4
2 of 4
www.diodes.com
July 2015
© Diodes Incorporated
MBR730 – MBR750
OBSOL ETE – PA RT DI S CONT INU E D
PART OBSOLETE
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Characteristic
Symbol
MBR
730
MBR
740
MBR
750
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR
30
40
50
V
RMS Reverse Voltage
VR(RMS)
21
28
35
V
Average Rectified Output Current
(Note 4) @ TC = +125°C
IO
7.5
A
Non-Repetitive Peak Forward Surge Current 8.3ms
Single Half Sine-Wave Superimposed on Rated Load
IFSM
150
A
Thermal Characteristics
Characteristic
Symbol
Value
Unit
Typical Thermal Resistance Junction to Case (Note 4)
RθJC
3.5
°C/W
Voltage Rate of Change (Rated VR)
dV/dt
10,000
V/µs
Operating Temperature Range
TJ
-55 to +150
°C
Storage Temperature Range
TSTG
-55 to +175
°C
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
MBR
730
MBR
740
MBR
750
Unit
Forward Voltage Drop @ IF = 7.5A, TJ = +25°C
(Note 6) @ IF = 7.5A, TJ = +125°C
@ IF = 15A, TJ = +25°C
@ IF = 15A, TJ = +125°C
VFM
—
0.57
0.84
0.72
0.75
0.65
—
—
V
Peak Reverse Current @ TJ = +25°C
at Rated DC Blocking Voltage @ TJ = +125°C
IRM
0.1
15
0.5
50
mA
Typical Total Capacitance (Note 5)
CT
400
pF
Notes: 4. Thermal resistance junction to case mounted on heatsink.
5. Measured at 1.0MHz and applied reverse voltage of 4.0V DC.
6. Short duration pulse test used to minimize self-heating effect.
050 100 150
I , AVERAGE FWD CURRENT (A)
(AV)
T , CASE TEMPERATURE ( C)
Fig. 1 Fwd Current Derating Curve
C°
0
2
4
6
8
10
0.1
1.0
10
100
0.20.1 0.4 0.50.3 0.6 0.8 0.90.7 1.0
I , INSTANTANEOUS FWD CURRENT (A)
F
V , INSTANTANEOUS FWD VOLTAGE (V)
Fig. 2 Typ Instantaneous Fwd Characteristics
F
MBR730 – MBR750
Document number: DS23007 Rev. 11 - 4
3 of 4
www.diodes.com
July 2015
© Diodes Incorporated
MBR730 – MBR750
OBSOL ETE – PA RT DI S CONT INU E D
PART OBSOLETE
110 100
I , PEAK FWD SURGE CURRENT (A)
FSM
NUMBER OF CYCLES AT 60Hz
Fig. 3 Max Non-Repetitive Surge Current
8.3 ms Single half sine-wave
25
50
75
100
125
150
175
100
1,000
4,000
1.0 10
C , CAPACITANCE (pF)
T
V , REVERSE VOLTAGE (V)
Fig. 4 Typical Total Capacitance
R
1000.1
0.001
0.01
0.1
1.0
020 40 60 80 100
I , INSTANTANEOUS REVERSE CURRENT (mA)
R
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
Fig. 5 Typical Reverse Characteristics
10
Package Outline Dimensions
Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version.
TO220AC
Dim
Min
Typ
Max
A
3.56
-
4.82
A1
0.51
-
1.39
A2
2.04
-
2.92
b
0.39
0.81
1.01
b2
1.15
1.24
1.77
c
0.356
-
0.61
D
14.22
-
16.51
D1
8.39
-
9.01
e1
5.08
E
9.66
-
10.66
H1
5.85
-
6.85
L
12.70
-
14.73
L1
-
-
6.35
P
3.54
-
4.08
Q
2.54
-
3.42
All Dimensions in mm
AA1
c
D
E
L
b
e1
b2
P
H1
Q
L1
A2
SEATING PLANE
D1
MBR730 – MBR750
Document number: DS23007 Rev. 11 - 4
4 of 4
www.diodes.com
July 2015
© Diodes Incorporated
MBR730 – MBR750
OBSOL ETE – PA RT DI S CONT INU E D
PART OBSOLETE
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written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
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