MMBT3906T PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features * * * Epitaxial Planar Die Construction Complementary NPN Type Available (MMBT3904T) Ultra-Small Surface Mount Package SOT-523 A * * * * B Case: SOT-523, Molded Plastic Min Max Typ A 0.15 0.30 0.22 B 0.75 0.85 0.80 C 1.45 1.75 1.60 D 3/4 3/4 0.50 G 0.90 1.10 1.00 C Mechanical Data * * * Dim B TOP VIEW C E D E G Terminals: Solderable per MIL-STD-202, Method 208 Terminal Connections: See Diagram Marking (See Page 2): 3N Ordering & Date Code Information: See Page 2 Weight: 0.002 grams (approx.) H K J M H 1.50 1.70 1.60 J 0.00 0.10 0.05 K 0.60 0.80 0.75 L L 0.10 0.30 0.22 M 0.10 0.20 0.12 N 0.45 0.65 0.50 a 0 8 3/4 All Dimensions in mm Maximum Ratings @ TA = 25C unless otherwise specified Characteristic Symbol MMBT3906T Unit Collector-Base Voltage VCBO -40 V Collector-Emitter Voltage VCEO -40 V Emitter-Base Voltage VEBO -5.0 V Collector Current - Continuous IC -200 mA Power Dissipation (Note 1) Pd 150 mW RqJA 833 C/W Tj, TSTG -55 to +150 C Thermal Resistance, Junction to Ambient (Note 1) Operating and Storage and Temperature Range Notes: 1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf. DS30271 Rev. 2 - 2 1 of 3 MMBT3906T Electrical Characteristics @ TA = 25C unless otherwise specified Characteristic Symbol Min Max Unit Test Condition Collector-Base Breakdown Voltage V(BR)CBO -40 3/4 V Collector-Emitter Breakdown Voltage V(BR)CEO -40 3/4 V IC = -1.0mA, IB = 0 Emitter-Base Breakdown Voltage V(BR)EBO -5.0 3/4 V IE = -10mA, IC = 0 ICEX 3/4 -50 nA VCE = -30V, VEB(OFF) = -3.0V IBL 3/4 -50 nA VCE = -30V, VEB(OFF) = -3.0V hFE 60 80 100 60 30 3/4 3/4 300 3/4 3/4 3/4 Collector-Emitter Saturation Voltage VCE(SAT) 3/4 -0.25 -0.40 V IC = -10mA, IB = -1.0mA IC = -50mA, IB = -5.0mA Base- Emitter Saturation Voltage VBE(SAT) -0.65 3/4 -0.85 -0.95 V IC = -10mA, IB = -1.0mA IC = -50mA, IB = -5.0mA NF 3/4 4.0 dB VCE = -5.0Vdc, IC = 100mAdc, RS = 1.0KW, f = 1.0KHz Output Capacitance Cobo 3/4 4.5 pF VCB = -5.0V, f = 1.0MHz, IE = 0 Input Capacitance Cibo 3/4 10 pF VEB = -0.5V, f = 1.0MHz, IC = 0 Input Impedance hie 2.0 12 kW Voltage Feedback Ratio hre 0.1 10 x 10-4 Small Signal Current Gain hfe 100 400 3/4 Output Admittance hoe 3.0 60 mS fT 250 3/4 MHz Delay Time td 3/4 35 ns Rise Time tr 3/4 35 ns Storage Time ts 3/4 225 ns Fall Time tf 3/4 75 ns OFF CHARACTERISTICS (Note 2) Collector Cutoff Current Base Cutoff Current IC = -10mA, IE = 0 ON CHARACTERISTICS (Note 2) DC Current Gain Noise Figure IC = -100A, VCE = IC = -1.0mA, VCE = IC = -10mA, VCE = IC = -50mA, VCE = IC = -100mA, VCE = -1.0V -1.0V -1.0V -1.0V -1.0V SMALL SIGNAL CHARACTERISTICS Current Gain-Bandwidth Product VCE = 1.0V, IC = 10mA, f = 1.0kHz VCE = -20V, IC = -10mA, f = 100MHz SWITCHING CHARACTERISTICS Ordering Information Note: VCC = -3.0V, IC = -10mA, VBE(off) = 0.5V, IB1 = -1.0mA VCC = -3.0V, IC = -10mA, IB1 = IB2 = -1.0mA (Note 3) Device Packaging Shipping MMBT3906T-7 SOT-523 3000/Tape & Reel 2. Short duration pulse test used to minimize self-heating effect. 3. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. 3N = Product Type Marking Code YM = Date Code Marking Y = Year ex: N = 2002 M = Month ex: 9 = September 3NYM Date Code Key Year 1998 1999 2000 2001 2002 2003 2004 Code J K L M N P R Month Jan Feb March Apr May Jun Jul Aug Sep Oct Nov Dec Code 1 2 3 4 5 6 7 8 9 O N D DS30271 Rev. 2 - 2 2 of 3 MMBT3906T 250 100 f = 1MHz CIBO, INPUT CAPACITANCE (pF) COBO, OUTPUT CAPACITANCE (pF) Pd, POWER DISSIPATION (mW) (see Note 1) 200 150 100 50 10 Cibo Cobo 1 0.1 0 0 100 200 100 10 VCB, COLLECTOR-BASE VOLTAGE (V) Fig. 2, Input and Output Capacitance vs. Collector-Base Voltage TA, AMBIENT TEMPERATURE (C) Fig. 1, Power Derating Curve 1000 10 VCE(SAT), COLLECTOR-EMITTER (V) SATURATION VOLTAGE hFE, DC CURRENT GAIN 1 TA = 125C 100 TA = +25C TA = -25C 10 IC IB = 10 1 0.1 VCE = 1.0V 0.01 1 1 0.1 10 100 1 1000 IC, COLLECTOR CURRENT (mA) Fig. 3, Typical DC Current Gain vs Collector Current 10 100 1000 IC, COLLECTOR CURRENT (mA) Fig. 4, Typical Collector-Emitter Saturation Voltage vs. Collector Current VBE(SAT), BASE-EMITTER (V) SATURATION VOLTAGE 1.0 0.9 0.8 0.7 0.6 IC IB = 10 0.5 1 10 100 IC, COLLECTOR CURRENT (mA) Fig. 5, Typical Base-Emitter Saturation Voltage vs. Collector Current DS30271 Rev. 2 - 2 3 of 3 MMBT3906T