DS30271 Rev. 2 - 2 1 of 3 MMBT3906T
MMBT3906T
PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR
·Epitaxial Planar Die Construction
·Complementary NPN Type Available
(MMBT3904T)
·Ultra-Small Surface Mount Package
Characteristic Symbol MMBT3906T Unit
Collector-Base Voltage VCBO -40 V
Collector-Emitter Voltage VCEO -40 V
Emitter-Base Voltage VEBO -5.0 V
Collector Current - Continuous IC-200 mA
Power Dissipation (Note 1) Pd150 mW
Thermal Resistance, Junction to Ambient (Note 1) RqJA 833 °C/W
Operating and Storage and Temperature Range Tj,T
STG -55 to +150 °C
Features
Maximum Ratings @ TA= 25°C unless otherwise specified
A
E
JL
TOP VIEW
M
BC
H
G
D
K
C
BE
Mechanical Data
·Case: SOT-523, Molded Plastic
·
·Terminals: Solderable per MIL-STD-202,
Method 208
·Terminal Connections: See Diagram
·Marking (See Page 2): 3N
·Ordering & Date Code Information: See Page 2
·Weight: 0.002 grams (approx.)
SOT-523
Dim Min Max Typ
A0.15 0.30 0.22
B0.75 0.85 0.80
C1.45 1.75 1.60
D¾¾0.50
G0.90 1.10 1.00
H1.50 1.70 1.60
J0.00 0.10 0.05
K0.60 0.80 0.75
L0.10 0.30 0.22
M0.10 0.20 0.12
N0.45 0.65 0.50
a0°8°¾
All Dimensions in mm
Notes: 1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout
document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
DS30271 Rev. 2 - 2 2 of 3 MMBT3906T
Electrical Characteristics @ TA = 25°C unless otherwise specified
Characteristic Symbol Min Max Unit Test Condition
OFF CHARACTERISTICS (Note 2)
Collector-Base Breakdown Voltage V(BR)CBO -40 ¾VIC= -10mA, IE = 0
Collector-Emitter Breakdown Voltage V(BR)CEO -40 ¾VIC= -1.0mA, IB = 0
Emitter-Base Breakdown Voltage V(BR)EBO -5.0 ¾VIE = -10mA, IC = 0
Collector Cutoff Current ICEX ¾-50 nA VCE = -30V, VEB(OFF) = -3.0V
Base Cutoff Current IBL ¾-50 nA VCE = -30V, VEB(OFF) = -3.0V
ON CHARACTERISTICS (Note 2)
DC Current Gain hFE
60
80
100
60
30
¾
¾
300
¾
¾
¾
IC = -100µA, VCE = -1.0V
IC = -1.0mA, VCE = -1.0V
IC = -10mA, VCE = -1.0V
IC = -50mA, VCE = -1.0V
IC = -100mA, VCE = -1.0V
Collector-Emitter Saturation Voltage VCE(SAT) ¾-0.25
-0.40 VIC= -10mA, IB = -1.0mA
IC = -50mA, IB = -5.0mA
Base- Emitter Saturation Voltage VBE(SAT) -0.65
¾
-0.85
-0.95 VIC = -10mA, IB = -1.0mA
IC = -50mA, IB = -5.0mA
Noise Figure NF ¾4.0 dB VCE = -5.0Vdc, IC = 100mAdc,
RS = 1.0KW, f = 1.0KHz
SMALL SIGNAL CHARACTERISTICS
Output Capacitance Cobo ¾4.5 pF VCB = -5.0V, f = 1.0MHz, IE = 0
Input Capacitance Cibo ¾10 pF VEB = -0.5V, f = 1.0MHz, IC = 0
Input Impedance hie 2.0 12 kW
VCE = 1.0V, IC = 10mA,
f = 1.0kHz
Voltage Feedback Ratio hre 0.1 10 x 10-4
Small Signal Current Gain hfe 100 400 ¾
Output Admittance hoe 3.0 60 mS
Current Gain-Bandwidth Product fT250 ¾MHz VCE = -20V, IC = -10mA,
f = 100MHz
SWITCHING CHARACTERISTICS
Delay Time td¾35 ns VCC = -3.0V, IC = -10mA,
VBE(off) = 0.5V, IB1 = -1.0mA
Rise Time tr¾35 ns
Storage Time ts¾225 ns VCC = -3.0V, IC = -10mA,
IB1 = IB2 = -1.0mA
Fall Time tf¾75 ns
Note: 2. Short duration pulse test used to minimize self-heating effect.
3. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
Ordering Information (Note 3)
Device Packaging Shipping
MMBT3906T-7 SOT-523 3000/Tape & Reel
3NYM
3N = Product Type Marking Code
YM = Date Code Marking
Y = Year ex: N = 2002
M = Month ex: 9 = September
Date Code Key
Year 1998 1999 2000 2001 2002 2003 2004
Code JKLM N PR
Month Jan Feb March Apr May Jun Jul Aug Sep Oct Nov Dec
Code 1234567
89 OND
DS30271 Rev. 2 - 2 3 of 3 MMBT3906T
1
100
10
0.1 110 100
C , INPUT CAPACITANCE (pF)
IBO
C , OUTPUT CAPACITANCE (pF)
OBO
V , COLLECTOR-BASE VOLTAGE (V)
CB
Fig. 2, Input and Output Capacitance vs.
Collector-Base Volta
g
e
f= 1MHz
Cibo
Cobo
0
100
150
50
200
2
5
0
0100200
P , POWER DISSIPATION (mW)
d
T , AMBIENT TEMPERATURE (°C)
A
Fi
g
. 1, Power Deratin
g
Curve
(see Note 1)
0.01
0.1
10
1
110 100 1000
V , COLLECTOR-EMITTER (V)
CE(SAT)
SATURATION VOLTAGE
I , COLLECTOR CURRENT (mA)
C
Fig. 4, Typical Collector-Emitter Saturation Voltage
vs. Collector Current
IC
IB= 10
1
10
1000
100
0.1 110 1000
100
h , DC CURRENT GAIN
FE
I , COLLECTOR CURRENT (mA)
C
Fig. 3, Typical DC Current Gain vs
Collector Current
T = -25°C
A
T = +25°C
A
T = 125°C
A
V = 1.0V
CE
0.5
0.6
0.7
0.8
0.9
1
.
0
1 10 100
V , BASE-EMITTER (V)
BE(SAT)
SATURATION VOLTAGE
I , COLLECTOR CURRENT (mA)
C
Fig. 5, Typical Base-Emitter
Saturation Volta
g
e vs. Collector Current
IC
IB=10
