2SK2940(L) - Renesas Electronics - Datasheet.Directory

2SK2940(L),2SK2940(S)

Silicon N Channel MOS FET

High Speed Power Switching

ADE-208-563B (Z)

3rd. Edition

Jul. 1998

Features

• Low on-resistance

RDS =0.010 Ω typ.

• High speed switching

• 4V gate drive device can be driven from 5V source

Outline

1. Gate

2. Drain

3. Source

4. Drain

123

4

123

4

LDPAK

G

D

S

2SK2940(L),2SK2940(S)

2

Absolute Maximum Ratings (Ta = 25°C)

Item Symbol Ratings Unit

Drain to source voltage VDSS 60 V

Gate to source voltage VGSS ±20 V

Drain current ID45 A

Drain peak current ID(pulse)Note1 180 A

Body-drain diode reverse drain current IDR 45 A

Avalanche current IAP Note3 45 A

Avalanche energy EAR Note3 173 mJ

Channel dissipation Pch Note2 75 W

Channel temperature Tch 150 °C

Storage temperature Tstg –55 to +150 °C

Note: 1. PW ≤ 10µs, duty cycle ≤ 1 %

2. Value at Tc = 25°C

3. Value at Tch = 25°C, Rg ≥ 50Ω

2SK2940(L),2SK2940(S)

3

Electrical Characteristics (Ta = 25°C)

Item Symbol Min Typ Max Unit Test Conditions

Drain to source breakdown voltage V(BR)DSS 60——V I

D

= 10mA, VGS = 0

Gate to source breakdown voltage V(BR)GSS ±20——V I

G

= ±100µA, VDS = 0

Gate to source leak current IGSS ——±10 µAV

GS = ±16V, VDS = 0

Zero gate voltege drain current IDSS ——10µAV

DS = 60 V, VGS = 0

Gate to source cutoff voltage VGS(off) 1.5 — 2.5 V ID = 1mA, VDS = 10V

Static drain to source on state RDS(on) — 0.010 0.013 ΩID = 20A, VGS = 10VNote4

resistance RDS(on) — 0.015 0.025 ΩID = 20A, VGS = 4V Note4

Forward transfer admittance |yfs|2440—S I

D

= 20A, VDS = 10V Note4

Input capacitance Ciss — 2200 — pF VDS = 10V

Output capacitance Coss — 1050 — pF VGS = 0

Reverse transfer capacitance Crss — 320 — pF f = 1MHz

Turn-on delay time td(on) — 25 — ns ID = 20A, VGS = 10V

Rise time tr— 200 — ns RL = 1.5Ω

Turn-off delay time td(off) — 320 — ns

Fall time tf— 240 — ns

Body–drain diode forward voltage VDF — 0.95 — V IF = 45A, VGS = 0

Body–drain diode reverse

recovery time trr — 60 — ns IF = 45A, VGS = 0

diF/ dt =50A/µs

Note: 4. Pulse test

2SK2940(L),2SK2940(S)

4

Main Characteristics

100

75

50

25

050 100 150 200

50

40

30

20

10

0

10 V

246810

6 V 50

40

30

20

10

012345

Channel Dissipation Pch (W)

Case Temperature Tc (°C)

Power vs. Temperature Derating

Drain to Source Voltage V (V)

DS

Drain Current I (A)

D

Maximum Safe Operation Area

Drain to Source Voltage V (V)

DS

Drain Current I (A)

D

Typical Output Characteristics

Gate to Source Voltage V (V)

GS

Drain Current I (A)

D

Typical Transfer Characteristics

V = 10 V

Pulse Test

DS

0.1 0.3 1 310 30 100

1000

300

100

30

10

3

1

0.3

0.1

DC Operation (Tc = 25°C)

Ta = 25 °C

10 µs

100 µs

1 ms

PW = 10 ms (1shot)

Operation in

this area is

limited by R

DS(on)

3.5 V

4 V

5 V

3 V

V = 2.5 V

GS

Tc = 75°C

25°C

–25°C

Pulse Test

2SK2940(L),2SK2940(S)

5

0.5

0.4

0.3

0.2

0.1

048

12 16 20

40

32

24

16

8

–40 0 40 80 120 160

0

V = 4 V

GS

10 V

5, 10, 20 A

0.1 0.3 1 3 10 30 100

500

100

200

20

50

10

2

5

1

0.5

25 °C

Tc = –25 °C

75 °C

Gate to Source Voltage V (V)

GS

Drain to Source Saturation Voltage vs.

Gate to Source Voltage

V (V)

DS(on)

Drain to Source Saturation Voltage

Drain Current I (A)

D

Static Drain to Source on State Resistance

vs. Drain Current

Case Temperature Tc (°C)

Static Drain to Source on State Resistance

vs. Temperature

Drain Current I (A)

D

Forward Transfer Admittance |y | (S)

fs

Forward Transfer Admittance vs.

Drain Current

Pulse Test

V = 10 V

Pulse Test

DS

Drain to Source On State Resistance

R (m )

W

DS(on)

I = 20 A

D

10 A

5 A

1 5 20 10021050

100

20

1

5

2

10

50

V = 4 V

GS

10 V

Pulse Test

R (m )

W

DS(on)

I = 20 A

D

10 A 5 A

2SK2940(L),2SK2940(S)

6

0.1 0.3 1 3 10 30 100 01020304050

10000

2000

5000

1000

100

200

500

100

80

60

40

20

0

20

16

12

8

4

40 80 120 160 200

00.1 0.2 1 2 10 20 100

I = 45 A

D

V

GS

V

DS

V = 50 V

25 V

10 V

DD

Reverse Drain Current I (A)

DR

Reverse Recovery Time trr (ns)

Body–Drain Diode Reverse

Recovery Time

Capacitance C (pF)

Drain to Source Voltage V (V)

DS

Typical Capacitance vs.

Drain to Source Voltage

Gate Charge Qg (nc)

Drain to Source Voltage V (V)

DS

Gate to Source Voltage V (V)

GS

Dynamic Input Characteristics

Drain Current I (A)

D

Switching Time t (ns)

Switching Characteristics

100

20

50

10

di / dt = 50 A / µs

V = 0, Ta = 25 °C

GS 50

V = 0

f = 1 MHz

GS

Ciss

Coss

Crss

V = 10 V

25 V

50 V

DD

1000

200

500

100

20

10

50

0.5 5 50

V = 10 V, V = 30 V

PW = 10 µs, duty < 1 %

GS DD

tf

r

t

d(on)

t

d(off)

t

2SK2940(L),2SK2940(S)

7

50

40

30

20

10

00.4 0.8 1.2 1.6 2.0

200

160

120

80

40

25 50 75 100 125 150

0

Channel Temperature Tch (°C)

Repetitive Avalanche Energy E (mJ)

AR

Maximum Avalanche Energy vs.

Channel Temperature Derating

Source to Drain Voltage V (V)

SD

Reverse Drain Current I (A)

DR

Reverse Drain Current vs.

Source to Drain Voltage

Pulse Test

D. U. T

Rg

I

Monitor

AP

V

Monitor

DS

V

DD

50W

Vin

15 V

0

I

D

V

DS

I

AP

V

(BR)DSS

L

V

DD

E = • L • I •

2

1V

V – V

AR AP DSS

DSS DD

2

Avalanche Test Circuit Avalanche Waveform

V = 0, –5 V

GS

10 V

5 V

I = 45 A

V = 25 V

duty < 0.1 %

Rg > 50

AP

DD

W

2SK2940(L),2SK2940(S)

8

Vin Monitor

D.U.T.

Vin

10 V

R

L

V

= 30 V

DD

tr

td(on)

Vin

90% 90%

10%

Vout

td(off)

Vout

Monitor

50W

90%

10%

t

f

Switching Time Test Circuit Waveform

Pulse Width PW (S)

Normalized Transient Thermal Impedance

s (t)

g

Normalized Transient Thermal Impedance vs. Pulse Width

3

1

0.3

0.1

0.03

0.01

10 µ 100 µ 1 m 10 m 100 m 1 10

DM

P

PW

T

D = PW

T

ch – c(t) = s (t) • ch – c

ch – c = 1.67 °C/W, Tc = 25 °C

q g q

q

Tc = 25°C

D = 1

0.5

0.2

0.1

0.05

0.02

0.01

1shot pulse

2SK2940(L),2SK2940(S)

9

Package Dimensions

Hitachi Code

JEDEC

EIAJ

Mass

(reference value)

LDPAK (L)

—

1.4 g

10.2 ± 0.3

0.86

0.76 ± 0.1

2.54 ± 0.5

+ 0.2

– 0.1

1.2 ± 0.2

4.44 ± 0.2

1.3 ± 0.15

2.59 ± 0.2

0.4 ± 0.1

11.0 ± 0.5

8.6 ± 0.3

10.0

11.3 ± 0.5

+ 0.3

– 0.5

(1.4)

1.27 ± 0.2

As of January, 2001

Unit: mm

2SK2940(L),2SK2940(S)

10

Hitachi Code

JEDEC

EIAJ

Mass

(reference value)

LDPAK (S)-(1)

—

1.3 g

10.2 ± 0.3

1.27 ± 0.2

(1.5)

(1.4)

8.6 ± 0.3

10.0 + 0.3

– 0.5

4.44 ± 0.21.3 ± 0.15

0.1 + 0.2

– 0.1

0.4 ± 0.1

0.86 + 0.2

– 0.1

2.54 ± 0.5

1.2 ± 0.2

3.0+ 0.3

– 0.5

(1.5)

7.8

6.6

2.2

1.7

7.8

7.0

As of January, 2001

Unit: mm

2SK2940(L),2SK2940(S)

11

Hitachi Code

JEDEC

EIAJ

Mass

(reference value)

LDPAK (S)-(2)

—

1.35 g

10.2 ± 0.3

1.27 ± 0.2

(1.5)

(1.4)

8.6 ± 0.3

10.0 + 0.3

– 0.5

4.44 ± 0.21.3 ± 0.2

0.1 + 0.2

– 0.1

0.4 ± 0.1

0.86 + 0.2

– 0.1

2.54 ± 0.5

1.2 ± 0.2

5.0+ 0.3

– 0.5

(1.5)

7.8

6.6

2.2

1.7

7.8

7.0

As of January, 2001

Unit: mm

2SK2940(L),2SK2940(S)

12

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