FNA41060 / FNA41060B2 Motion SPM® 45 Series
October 2017
©2011 Semiconductor Components Industries, LLC. 1www.onsemi.com
FNA41060 / FNA41060B2 Rev. 2
FNA41060 / FNA41060B2
Motion SPM® 45 Series
Features
• UL Certified No. E209204 (UL1557)
• 600 V - 10 A 3-Phase IGBT Inverter with Integral Gate
Drivers and Protection
• Low Thermal Resistance Using Ceramic Substrate
• Low-Loss, Short-Circuit Rated IGBTs
• Built-In Bootstrap Diodes and Dedicated Vs Pins Sim-
plify PCB Layout
• Built-In NTC Thermistor for Temperature Monitoring
• Separate Open-Emitter Pins from Low -Side IGBTs for
Three-Phase Current Sensing
• Single-Grounded Power Supply
• Optimized for 5 kHz Switching Frequency
• Isolation Rating: 2000 Vrms / min.
Applications
• Motion Control - Home Appliance / Industrial Motor
Related Resources
• AN-9070 - Motion SPM® 45 Series Users Gui de
• AN-9071 - Motion SPM® 45 Series Thermal Perfor-
mance Information
• AN-9072 - Motion SPM® 45 Series Mounting Guid-
ance
• RD-344 - Reference Design (Three Shunt Solution)
• RD-345 - Reference Design (One Shunt Solution)
General Description
FNA41060 / FNA41060B2 is a Motion SPM ® 45 module
providing a fully-featured, high-performance inverter out-
put stage for AC Induction, BLDC, and PMSM motors.
These modules integrate optimized gate drive of
the built-in IGBTs to minimize EMI and losses, while also
providing multiple on-module protection features includ-
ing under-voltage lockouts, over-current shutdown, ther-
mal monitoring, and fault reporting. The built-in, high-
speed HVIC requires only a sing le supply voltage and
translates the incoming logic-level gate inpu ts to the
high-voltage, high-current drive signals required to prop-
erly drive the module's robust short-circuit-rated IGBTs.
Separate negative IGBT terminals are available for each
phase to support the widest variety of control algorithms.
Package Marking and Ordering Inform ation
Figure 1. Package Overview
Device Device Marking Package Packing Type Quantity
FNA41060 FNA41060 SPMAA-A26 Rail 12
FNA41060B2 FNA41060B2 SPMAA-C26 Rail 12
FNA41060 / FNA41060B2
FNA41060 / FNA41060B2 Motion SPM® 45 Series
©2011 Semiconductor Components Industries, LLC. 2www.onsemi.com
Integrated Power Functions
• 600 V - 10 A IGBT inverter for three-phase DC / AC power conversion (please refer to Figure 3)
Integrated Drive, Protection, and System Control Functions
• For inverter high-side IGBTs: gate drive circuit, high-voltage isolated high-speed level shifting
control circuit Under-Voltage Lock-Out (UVLO) protection
• For inverter low-side IGBTs: gate drive circuit, Short-Circuit Protection (SCP)
control supply circuit Under-Voltage Lock-Out (UVLO) protection
• Fault signaling: corresponding to UVLO (low-side supply) and SC faults
• Input interface: active-HIGH interface, works with 3.3 / 5 V logic, Schmitt trigger input
Pin Configuration
Figure 2. Top View
VTH(1)
RTH(2)
P(3)
U(4)
V(5)
W(6)
NU(7)
NV(8)
NW(9)
VB(U)(26)
VS(U)(25)
VB(V)(24)
VS(V)(23)
VB(W)(22)
VS(W)(21)
IN(UH)(20)
IN(VH)(19)
IN(WH)(18)
VCC(H)(17)
COM(15)
IN(UL)(14)
IN(VL)(13)
IN(WL)(12)
VFO(11)
CSC(10)
VCC(L)(16)
Case Te m perat ure ( TC)
Detecting Point
VTH(1)
RTH(2)
P(3)
U(4)
V(5)
W(6)
NU(7)
NV(8)
NW(9)
VB(U)(26)
VS(U)(25)
VB(V)(24)
VS(V)(23)
VB(W)(22)
VS(W)(21)
IN(UH)(20)
IN(VH)(19)
IN(WH)(18)
VCC(H)(17)
COM(15)
IN(UL)(14)
IN(VL)(13)
IN(WL)(12)
VFO(11)
CSC(10)
VCC(L)(16)
Case Te m perat ure ( TC)
Detecting Point
FNA41060 / FNA41060B2 Motion SPM® 45 Series
©2011 Semiconductor Components Industries, LLC. 3www.onsemi.com
FNA41060 / FNA41060B2
Pin Descriptions
Pin Number Pin Name Pin Description
1V
TH Thermistor Bias Voltage
2R
TH Series Resistor for the Use of Thermistor (Temperature Detection)
3 P Positive DC-Link Input
4 U Output for U-Phase
5 V Output for V-Phase
6 W Output for W-Phase
7N
UNegative DC-Link Input for U-Phase
8N
VNegative DC-Link Input for V-Phase
9N
WNegative DC-Link Input for W-Phase
10 CSC Capacitor (Low-Pass Filter) for Short-circuit Current Detection Input
11 VFO Fault Output
12 IN(WL) Signal Input for Low-Side W-Phase
13 IN(VL) Signal Input for Low-Side V-Phase
14 IN(UL) Signal Input for Low-Side U-Phase
15 COM Common Supply Ground
16 VCC(L) Low-Side Common Bias Voltage for IC and IGBTs Driving
17 VCC(H) High-Side Common Bias Voltage for IC and IGBTs Driving
18 IN(WH) Signal Input for High-Side W-Phase
19 IN(VH) Signal Input for High-Side V-Phase
20 IN(UH) Signal Input for High-Side U-Phase
21 VS(W) High-Side Bias Voltage Ground for W-Phase IGBT Driving
22 VB(W) High-Side Bias Voltage for W-Phase IGBT Driving
23 VS(V) High-Side Bias Voltage Ground for V-Phase IGBT Driving
24 VB(V) High-Side Bias Voltage for V-Phase IGBT Driving
25 VS(U) High-Side Bias Voltage Ground for U-Phase IGBT Driving
26 VB(U) High-Side Bias Voltage for U-Phase IGBT Driving
FNA41060 / FNA41060B2 Motion SPM® 45 Series
©2011 Semiconductor Components Industries, LLC. 4www.onsemi.com
FNA41060 / FNA41060B2
Internal Equivalent Circuit and Input/Output Pins
Figure 3. Internal Block Diagram
1st Notes:
1. Inverter high-side is composed of three IGBTs, freewheeling diodes, and one control IC for each IGBT.
2. Inverter low-side is composed of three IGBTs, freewheeling diodes, and one control IC for each IGBT. It has gate drive and protection functions.
3. Inverter power side is composed of four inverter DC-link input terminals and three inverter output terminals.
COM
VCC
IN(WL)
IN(VL)
IN(UL)
VFO
C(SC) OUT(WL)
OUT(VL)
OUT(UL)
NW(9)
NV(8)
NU(7)
W(6)
V (5)
U(4)
P (3)
(25) VS(U)
(26) VB(U)
(23) VS(V)
(24) VB(V)
(10) CSC
(11) VFO
(12) IN(WL)
(13) IN(VL)
(14) IN(UL)
(15) COM
UVB
OUT(UH)
UVS
IN(UH)
WVS
WVS
OUT(WH)
IN(WH)
COM
VCC
WVB
OUT(VH)
VVS
IN(VH)
VTH (1)
(19) IN(VH)
(20) IN(UH)
(21) VS(W)
(22) VB(W)
(17) VCC(H)
(18) IN(WH)
RTH (2)
Thermister
UVS
VVS
VVB
(16) VCC(L)
FNA41060 / FNA41060B2 Motion SPM® 45 Series
©2011 Semiconductor Components Industries, LLC. 5www.onsemi.com
FNA41060 / FNA41060B2
Absolute Maximum Ratings (TJ = 25°C, unless otherwise specified.)
Inverter Part
2nd Notes:
1. The maximum junction temperature rating of the power chips integrated within the Motion SPM® 45 product is 150C.
Control Part
Bootstrap Diode Part
Total System
Thermal Resistance
2nd Notes:
2. For the measurement point of case temperature (TC), please refer to Figure 2.
Symbol Parameter Conditions Rating Unit
VPN Supply Voltage Applied between P - NU, NV, NW450 V
VPN(Surge) Supply Voltage (Surge) Applied between P - NU, NV, NW500 V
VCES Collector - Emitter Voltage 600 V
± ICEach IGBT Collector Current TC = 25°C, TJ ＜150°C 10 A
± ICP Each IGBT Collector Current (Peak) TC = 25°C, TJ ＜ 150°C, Under 1 ms Pulse
Width
20 A
PCCollector Dissipation TC = 25°C per Chip 34 W
TJOperating Junction Temperature (2nd Note 1) -40 ~ 150 °C
Symbol Parameter Conditions Rating Unit
VCC Control Supply Voltage Applied between VCC(H), VCC(L) - COM 20 V
VBS High - Side Control Bias Voltage Applied between VB(U) - VS(U), VB(V) - VS(V),
VB(W) - VS(W)
20 V
VIN Input Signal Voltage Applied between IN(UH), IN(VH), IN(WH),
IN(UL), IN(VL), IN(WL) - COM
-0.3 ~ VCC + 0.3 V
VFO Fault Output Supply Voltage Applied between VFO - COM -0.3 ~ VCC + 0.3 V
IFO Fault Output Current Sink Current at VFO pin 1 mA
VSC Current-Sensing Input Voltage Applied between CSC - COM -0.3 ~ VCC + 0.3 V
Symbol Parameter Conditions Rating Unit
VRRM Maximum Repetitive Reverse Voltage 600 V
IFForward Current TC = 25°C, TJ ＜150°C 0.50 A
IFP Forward Current (Peak) TC = 25°C, TJ ＜ 150°C, Under 1 ms Pulse
Width
1.50 A
TJOperating Junction Temperature -40 ~ 150 °C
Symbol Parameter Conditions Rating Unit
VPN(PROT) Self-Protection Supply Voltage Limit
(Short-Circuit Protection Capability)
VCC = VBS = 13.5 ~ 16.5 V
TJ = 150°C, Non-Repetitive, < 2 s
400 V
TSTG Storage Temperature -40 ~ 125 °C
VISO Isolation Voltage 60 Hz, Sinusoidal, AC 1 Minute, Connect
Pins to Heat Sink Plate
2000 Vrms
Symbol Parameter Conditions Min. Typ. Max. Unit
Rth(j-c)Q Junction to Case Thermal Resistance Inverter IGBT Part (per 1 / 6 module) - - 3.6 °C / W
Rth(j-c)F Inverter FWDi Part (per 1 / 6 module) - - 4.8 °C / W
FNA41060 / FNA41060B2 Motion SPM® 45 Series
©2011 Semiconductor Components Industries, LLC. 6www.onsemi.com
FNA41060 / FNA41060B2
Electrical Characteristics (TJ = 25°C, unless otherwise specified.)
Inverter Part
2nd Notes:
3. tON and tOFF include the propagation delay of the internal drive IC. tC(ON) and tC(OFF) are the switching time of IGBT itself under the given gate driving condition internally. For
the detailed information, please see Figure 4.
Figure 4. Switching Time Definition
Symbol Parameter Conditions Min. Typ. Max. Unit
VCE(SAT) Collector - Emitter Saturation
Voltage
VCC = VBS = 15 V
VIN = 5 V
IC = 10 A, TJ = 25°C - 1.7 2.2 V
VFFWDi Forward Voltage VIN = 0 V IF = 10 A, TJ = 25°C - 1.8 2.3 V
HS tON Switching Times VPN = 300 V, VCC = VBS = 15 V, IC = 10 A
TJ = 25°C
VIN = 0 V 5 V, Inductive Load
(2nd Note 3)
0.40 0.70 1.20 s
tC(ON) -0.200.45s
tOFF -0.751.25s
tC(OFF) -0.250.50s
trr -0.15- s
LS tON VPN = 300 V, VCC = VBS = 15 V, IC = 10 A
TJ = 25°C
VIN = 0 V 5 V, Inductive Load
(2nd Note 3)
0.40 0.70 1.20 s
tC(ON) -0.200.45s
tOFF -0.751.25s
tC(OFF) -0.250.50s
trr -0.15- s
ICES Collector - Emitter Leakage
Current
VCE = VCES --1mA
VCE IC
VIN
tON
tC(ON)
VIN(ON)
10% IC
10% VCE
90% IC
100% IC
trr
100% IC
VCE
IC
VIN
tOFF
tC(OFF)
VIN(OFF) 10% VCE 10% IC
(a ) tu rn -o n (b ) t u rn -off
FNA41060 / FNA41060B2 Motion SPM® 45 Series
©2011 Semiconductor Components Industries, LLC. 7www.onsemi.com
FNA41060 / FNA41060B2
Figure 5. Switching Loss Characteristics (Typical)
Control Part
2nd Notes:
4. Short-circuit protection is functioning only at the low-sides.
5. TTH is the temperature of thermister itselt. To know case temperature (TC), please make the experiment considering your application.
Symbol Parameter Conditions Min. Typ. Max. Unit
IQCCH Quiescent VCC Supply
Current
VCC(H) = 15 V, IN(UH,VH,WH) = 0 V VCC(H) - COM - - 0.10 mA
IQCCL VCC(L) = 15 V, IN(UL,VL, WL) = 0 V VCC(L) - COM - - 2.65 mA
IPCCH Operating VCC Supply
Current
VCC(L) = 15 V, fPWM = 20 kHz, duty
= 50%, Applied to One PWM Sig-
nal Input for High-Side
VCC(H) - COM - - 0.15 mA
IPCCL VCC(L) = 15 V, fPWM = 20 kHz, duty
= 50%, Applied to One PWM Sig-
nal Input for Low-Side
VCC(L) - COM - - 3.65 mA
IQBS Quiescent VBS Supply
Current
VBS = 15 V, IN(UH, VH, WH) = 0 V VB(U) - VS(U), VB(V) -
VS(V), VB(W) - VS(W)
- - 0.30 mA
IPBS Operating VBS Supply
Current
VCC = VBS = 15 V, fPWM = 20 kHz,
Duty = 50%, Applied to One PWM
Signal Input for High-Side
VB(U) - VS(U), VB(V) -
VS(V), VB(W) - VS(W)
- - 2.00 mA
VFOH Fault Output Voltage VSC = 0 V, VFO Circuit: 10 k to 5 V Pull-up 4.5 - - V
VFOL VSC = 1 V, VFO Circuit: 10 k to 5 V Pull-up - - 0.5 V
VSC(ref) Short-Circuit
Current Trip Level
VCC = 15 V (2nd Note 4) 0.45 0.50 0.55 V
UVCCD
Supply Circuit
Under-Voltage
Protection
Detection level 10.5 - 13.0 V
UVCCR Reset level 11.0 - 13.5 V
UVBSD Detection level 10.0 - 12.5 V
UVBSR Reset level 10.5 - 13.0 V
tFOD Fault-Out Pulse Width 30 - - s
VIN(ON) ON Threshold Voltage Applied between IN(UH), IN(VH), IN(WH), IN(UL), IN(VL),
IN(WL) - COM
--2.6V
VIN(OFF) OFF Threshold Voltage 0.8 - - V
RTH Resistance of
Thermister
@TTH = 25°C, (2nd Note 5) - 47 - k
@TTH = 100°C - 2.9 - k
01234567891011
0
100
200
300
400
500
600
700 Inductive Load, VPN=300V, VCC=15V, TJ=25℃
IG BT Tur n - ON , Eon
IGBT Tu rn-OFF, Eoff
FRD Turn-OFF, Erec
SWITCHING LOSS, ESW [uJ]
COLLECTOR CURRENT, Ic [AMPERES]
01234567891011
0
100
200
300
400
500
600
700
Inductive Load, VPN=300V, VCC=15V, TJ=150℃
IGBT Turn-ON, Eon
IGBT Turn-OFF, Eoff
FRD Turn-OFF, Erec
SWITCHING LOSS, ESW [uJ]
COLLECTOR CURRENT, Ic [AMPERES]
FNA41060 / FNA41060B2 Motion SPM® 45 Series
©2011 Semiconductor Components Industries, LLC. 8www.onsemi.com
FNA41060 / FNA41060B2
Figure. 6. R-T Curve of The Built-In Thermistor
Bootstrap Diode Part
Figure 7. Built-In Bootstrap Diode Characteristic
2nd Notes:
6. Built-in bootstrap diode includes around 15 Ω resistance characteristic.
Symbol Parameter Conditions Min. Typ. Max. Unit
VFForward Voltage IF = 0.1 A, TC = 25°C - 2.5 - V
trr Reverse-Recovery Time IF = 0.1 A, TC = 25°C - 80 - ns
-20-10 0 102030405060708090100110120
0
50
100
150
200
250
300
350
400
450
500
550
600 R-T Curve
Resistance[k]
Temperature TTH[]℃
50 60 70 80 90 100 110 120
0
4
8
12
16
20
Resistance[k]
Temperature [ ]℃
R-T Curve in 50 ~ 125℃℃
0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
Built-In Bootstrap Diode VF-IF C haracteristic
TC=25oC
IF [A]
VF [V]
FNA41060 / FNA41060B2 Motion SPM® 45 Series
©2011 Semiconductor Components Industries, LLC. 9www.onsemi.com
FNA41060 / FNA41060B2
Recommended Operating Conditions
2nd Notes:
7. This product might not make response if input pulse width is less than the recommanded value.
Figure 8. Allowable Maximum Output Current
2nd Notes:
8. This allowable output current value is the reference data for the safe operation of this product. This may be different from the actual application and operating condition.
Symbol Parameter Conditions Min. Typ. Max. Unit
VPN Supply Voltage Applied between P - NU, NV, NW- 300 400 V
VCC Control Supply Voltage Applied between VCC(H), VCC(L) - COM 13.5 15.0 16.5 V
VBS High-Side Bias Voltage Applied between VB(U) - VS(U), VB(V) - VS(V), VB(W) -
VS(W)
13.0 15.0 18.5 V
dVCC / dt,
dVBS / dt
Control Supply Variation -1 - 1 V / s
tdead Blanking Time for
Preventing Arm-Short
For each input signal 1.5 - - s
fPWM PWM Input Signal - 40C ＜TJ ＜150°C - - 20 kHz
VSEN Voltage for Current
Sensing
Applied between NU, NV, NW - COM
(Including Surge-Voltage)
-4 4 V
PWIN(ON) Minimun Input Pulse
Width
(2nd Note 7) 0.5 - - s
PWIN(OFF) 0.5 - -
0 102030405060708090100110120130140
0
1
2
3
4
5
6
7
8
9
10 Allowable Maximum Output Current
VDC=300V, VCC=VBS=15V
TJ ＜ 150℃ , TC ≤ 125℃
M.I.=0.9, P.F.=0.8
Sinusoidal PWM
fSW=15kHz
fSW=5kHz
IOrms [Arms]
Case Temperature, TC [℃]
FNA41060 / FNA41060B2 Motion SPM® 45 Series
©2011 Semiconductor Components Industries, LLC. 10 www.onsemi.com
FNA41060 / FNA41060B2
Mechanical Characteristics and Ratings
Figure 9. Flatness Measurement Position
Figure 10. Mounting Screws Torque Order
2nd Notes:
9. Do not make over torque when mounting screws. Much mounting torque may cause ceramic cracks, as well as bolts and Al heat-sink destruction.
10. Avoid one side tightening stress. Figure 10 shows the recommended torque order for mounting screws. Uneven mounting can cause the ceramic substrate of the SPM® 45
package to be damaged. The pre-screwing torque is set to 20 ~ 30% of maximum torque rating.
Parameter Conditions Min. Typ. Max. Unit
Device Flatness See Figure 9 0 - + 120 m
Mounting Torque Mounting Screw: M3
See Figure 10
Recommended 0.7 N • m 0.6 0.7 0.8 N • m
Recommended 7.1 kg • cm 6.2 7.1 8.1 kg • cm
Weight - 11.00 - g
1
2
Pre - Screwing : 1→2
Final Screwing : 2→1
1
2
Pre - Screwing : 1→2
Final Screwing : 2→1
FNA41060 / FNA41060B2 Motion SPM® 45 Series
©2011 Semiconductor Components Industries, LLC. 11 www.onsemi.com
FNA41060 / FNA41060B2
T ime Charts of Protective Function
a1 : Control supply voltage rises: after the voltage rises UVCCR, the circuits start to operate when next input is applied.
a2 : Normal operation: IGBT ON and carrying current.
a3 : Under-voltage detection (UVCCD).
a4 : IGBT OFF in spite of control input condition.
a5 : Fault output operation starts.
a6 : Under-voltage reset (UVCCR).
a7 : Normal operation: IGBT ON and carrying current.
Figure 11. Under-Voltage Protection (Low-Side)
b1 : Control supply voltage rises: after the voltage reaches UVBSR, the circuits start to operate when next input is applied.
b2 : Normal operation: IGBT ON and carrying current.
b3 : Under-voltage detection (UVBSD).
b4 : IGBT OFF in spite of control input condition, but there is no fault output signal.
b5 : Under-voltage reset (UVBSR).
b6 : Normal operation: IGBT ON and carrying current.
Figure 12. Under-Voltage Protection (High-Side)
Input Signal
Output Current
Fault Output Signal
Control
Supply Voltage
RESET
UVCCR
Protection
Circuit State SET RESET
UVCCD
a1
a3
a2
a4
a6
a5
a7
Input Signal
Output Current
Fault Output Signal
Control
Supply Voltage
RESET
UVBSR
Protection
Circuit State SET RESET
UVBSD
b1
b3
b2 b4
b6
b5
High-level (no fault output)
FNA41060 / FNA41060B2 Motion SPM® 45 Series
©2011 Semiconductor Components Industries, LLC. 12 www.onsemi.com
FNA41060 / FNA41060B2
(with the external shunt resistance and CR connection)
c1 : Normal operation: IGBT ON and carrying current.
c2 : Short-circuit current detection (SC trigger).
c3 : Hard IGBT gate interrupt.
c4 : IGBT turns OFF.
c5 : Input “LOW”: IGBT OFF state.
c6 : Input “HIGH”: IGBT ON state, but during the active period of fault output, the IGBT doesn’t turn ON.
c7 : IGBT OFF state.
Figure 13. Short-Circuit Protection (Low-Side Operation Only)
Input/Output Interface Circuit
Figure 14. Recommended MCU I/O Interface Circuit
2nd Notes:
11. RC coupling at each input (parts shown dotted) might change depending on the PWM control scheme in the application and the wiring impedance of the application’s printed
circuit board. The input signal section of the Motion SPM® 45 product integrates a 5 k(typ.) pull-down resistor. Therefore, when using an external filtering resistor, pay atten-
tion to the signal voltage drop at input terminal.
Lower Arms
Control Input
Output Current
Sensing Voltage
of Shunt Resistance
Fault Output Signal
SC Reference Voltage
CR Circuit Time
Constant Delay
SC
Protection
Circuit State SET RESET
c6 c7
c3
c2
c1
c8
c4
c5
Internal IGBT
Gate - Emitter Voltage
MCU
COM
+5 V (for MCU or Control power)
,,
IN(UL) IN(VL) IN(WL)
,,
IN(UH) IN(VH) IN(WH)
VFO
RPF = 10 kΩSPM
FNA41060 / FNA41060B2 Motion SPM® 45 Series
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FNA41060 / FNA41060B2
Figure 15. Typical Application Circuit
3rd Notes:
1) To avoid malfunction, the wiring of each input should be as short as possible (less than 2 - 3 cm).
2) By virtue of integrating an application-specific type of HVIC inside the Motion SPM® 45 product, direct coupling to MCU terminals without any optocoupler or transformer isola-
tion is possible.
3) VFO output is open-drain type. This signal line should be pulled up to the positive side of the MCU or control power supply with a resistor that makes IFO up to 1 mA (please
refer to Figure 14).
4) CSP15 of around seven times larger than bootstrap capacitor CBS is recommended.
5) Input signal is active-HIGH type. There is a 5 k resistor inside the IC to pull down each input signal line to GND. RC coupling circuits is recommanded for the prevention of
input signal oscillation. RSCPS time constant should be selected in the range 50 ~ 150 ns (recommended RS = 100 Ω, CPS = 1 nF).
6) To prevent errors of the protection function, the wiring around RF and CSC should be as short as possible.
7) In the short-circuit protection circuit, please select the RFCSC time constant in the range 1.5 ~ 2 s.
8) The connection between control GND line and power GND line which includes the NU, NV
, NW must be connected to only one point. Please do not connect the control GND
to the power GND by the broad pattern. Also, the wiring distance between control GND and power GND should be as short as possible.
9) Each capacitor should be mounted as close to the pins of the Motion SPM 45 product as possible.
10) To prevent surge destruction, the wiring between the smoothing capacitor and the P & GND pins should be as short as possible. The use of a high-frequency non-inductive
capacitor of around 0.1 ~ 0.22 F between the P and GND pins is recommended.
11) Relays are used in almost every systems of electrical equipment in home appliances. In these cases, there should be sufficient distance between the MCU and the relays.
12) The zener diode or transient voltage suppressor should be adopted for the protection of ICs from the surge destruction between each pair of control supply terminals
(recommanded zener diode is 22 V / 1 W, which has the lower zener impedance characteristic than about 15 Ω).
13) Please choose the electrolytic capacitor with good temperature characteristic in CBS. Also, choose 0.1 ~ 0.2 F R-category ceramic capacitors with good temperature and
frequency characteristics in CBSC.
14) For the detailed information, please refer to the AN-9070, AN-9071, AN-9072, RD-344, and RD-345.
Fault
+15 V
CBS CBSC
CBS CBSC
CBS CBSC
CSP15 CSPC15
RPF
CBPF
RS
M
VDC
CDCS
Gating UH
Gating VH
Gating WH
Gating UL
Gating VL
Gating WL
CPF
M
C
U
RSW
RSV
RSU
U-Phase Current
V-Phase Current
W-Phase C urrent
RF
COM
VCC
IN(WL)
IN(VL)
IN(UL)
VFO
CSC
OUT(WL)
OUT(VL)
OUT(UL)
NW(9)
NV(8)
NU(7)
W (6)
V (5)
U (4)
P (3)
(25) VS(U)
(26) VB(U)
(23) VS(V)
(24) VB(V)
(10) CSC
(11) VFO
(14) IN(UL)
(13) IN(VL)
(12) IN(WL)
(20) IN(UH)
(19) IN(VH)
(21) VS(W)
(22) VB(W)
(17) VCC(H)
(18) IN(WH)
Input Signal for
Short-Circuit Protection
CSC
RS
RS
RS
RS
RS
RS
CPS
CPS
CPS
CPS
CPS CPS
IN(WH)
IN(VH)
IN(UH)
COM
VCC
VS(W)
VS(V)
VS(U)
VS(V)
VS(U)
VS(W)
VB(U)
VB(V)
VB(W)
(15) COM
OUT(WH)
OUT(VH)
OUT(UH)
LVIC
HVIC
(1) VTH
(2) RTH
RTH THERMISTOR
Temp. M onitoring
(16) VCC(L)
+5 V
CSPC05 CSP05
Package Outline Drawing (FNA41060)
SPMAA−A26 / 26LD, PDD STD, CERAMIC TYPE, STANDARD DUAL FORM
CASE MODFA
ISSUE O
Package Outline Drawing (FNA41060B2, Long Terminal Type)
SPMAA−C26 / 26LD, PDD STD CERAMIC TYPE, LONG LEAD DUAL FORM TYPE
CASE MODFC
ISSUE O
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