INTERNATIONAL RECTIFIER Data Sheet No. PD-9.554D I<aR REPETITIVE AVALANCHE RATED AND dv/dt RATED HEXFET TRANSISTOR 4 N-CHANNEL IRFM2s50 2N7225 JANTX2E2N7225 JANTXVEN7225 (REF: MIL-S-19500/592) 200 Volt, 0.100 Ohm HEXFET The HEXFET technology is the key to International Rectifiers advanced line of power MOSFET transistors. The efficient geometry design achieves very low on-state resistance combined with high transconductance. The HEXFET transistors also feature all of the well established advantages of MOSFETs such as voltage control, very fast switching, ease of paralleling and temperature stability of the electrical parameters. They are well suited for applications such as switching power supplies and virtually any application where military and/or high reliability is required. CASE STYLE AND DIMENSIONS 13.84 (0.545) 13.59 (0.535) Js 60 (0.260) 6.32 (0.249) 20.32 (0.800) 20.07 (0.790) BERYLLIA WARNING PER MIL-S-19500 SEE PAGE 1-324 e 3.78 (G. 149} Product Summary Part Number | BVpss Rps(on) Ip (RFM250 200V 0.1002 274A FEATURES: @ Repetitive Avalanche Rating @ Isolated and Hermetically Sealed @ Alternative to TO-3 Package @ Simple Drive Requirements @ Ease of Paralleling @ Ceramic Eyelets [zz [0.12 0.005) [B- 13, a4 84 0-99) a 5.60 (0-260) cae 1.27 (0,050) T & 32 (0. 800) j =07 (0. ares ea HH it l ott 1a14 (0.045) x pam [ies eaaera-t) ope p20. 020) GD] C AGb] 6] [e075 070) CLC} TEC SN! Cs) TEAS 10 BB) 40 (1.235) 735 (1. 155) ~| LEGEND 1 DRAIN 2 SQURCE 3 (GATE NOTES 1 DIMENSIONING & TOLERANCING PER ANSI 145M - 1982. 2 ALL DIMENSIONS ARE SHOWN IN MILLIMETERS (INCHES) Conforms to JEDEC Outline TO-254AA" Dimensions in Millimeters and (inches) For leadform configurations see page |-324, tig. 15 1-317IRFM250, JANTXV, JANTX-, 2N7225 Devices Absolute Maximum Ratings IaR Parameter {RFM250, JANTXV, JANTX:, 2N7225 Units Ip @ Veg = 10V, Tce = 25C Continuous Drain Current 27.4 Ip @ Vag = 10V, To = 100C Continuous Drain Current v7 A lpm Pulsed Drain Current 110 Pp @ Te = 26C Max. Power Dissipation 150 Ww Linear Derating Factor 1.2 wk Vas Gate-to-Source Voltage +20 v E Single Pulse Avalanche Energy @ 500 mJ aS (See Fig. 12) lar Avalanche Current 274 A (See Ear) E Repetitive Avalanche Energy 15 md AR (See Fig. 13) dvidt Peak Diode Recovery dv/dt @ 50 Vins (See Fig. 17) Ty Operating Junction -55 to 150 TstG Storage Temperature Range C Lead Temperature 300 (0.063 in. (1.6 mm) from case for 10s) Weight 93 (typical) g Electrical Characteristics @ 1, = 25c (Uniess Otherwise Specified) Parameter Min. Typ. Max. Units Test Conditions BVoss Drain-to-Source Breakdown Voltage | 200 ~ _ Vv Ves = OV, Ip = 1.0 mA A4BVpgs/4Ty Tamperature Coefficient of _ 0.28 - VieC Reterence to 25C, Ip = 1.0 mA Breakdown Voltage Ri Static Drain-to-Source - _ 0.100 Vas = 10V, Ip = 17A DS(on} On-State Resistance a Gs D 0.105 Vas = 10V, Ip = 274A Vasith) Gate Threshold Voltage 20 - 40 Vv Vos = Vas. Ip = 250 pA os Forward Transconductance 9.0 = - S(0) | Vpg = 18, Ipg = 7A Ipss Zero Gate Voltage Drain Current - - 25 Vps = 08 x Max. Rating, Vag = OV A 250 Vps = 08 x Max. Rating Veg = OV, Ty = 126C less Gate-to-Source Leakage Forward _ - 100 nA Ves = 20V less Gate-to-Source Leakage Reverse - - ~100 Ves = -20V Qg Total Gate Charge 55 - 15 Veg = 10V, Ip = 274A Qgs Gate-to-Source Charge 8 _ 22 nc Vps = 0.5 x Max. Rating Qoa Gate-to-Drain (Miller) Charge 30 - 60 See Fig. 6 and 14 tg(on) Turn-On Delay Time =_ _ 35 Vpp = 100V, Ip = 274A, Rg = 2.352 tr Rise Time _ _ 190 ns ta(off Turn-Off Delay Time _ - 170 See Fig. 11 tt Fall Time - 130 Lp Internal Drain Inductance = 87 > Measured from the drain Modified MOSFET symbo! tead, 6 mm (0.25 in.) from | showing the internal nH package to center of die. inductances. o Ls Internal Source Inductance - 87 ~ Measured from the source lead, 6 mm (0.25 in.) from package to source bonding pad. $ Ciss Input Capacitance - 3500 - Ves = OV, Vos = 25V Coss Output Capacitance _ 700 - pF f = 1.0 MHz Crgs Reverse Transfer Capacitance 110 See Fig. 5 Coc Drain-to-Case Capacitance _ 12 _ 1-318IaR IRFM250, JANTXV, JANTX-, 2N7225 Devices Source-Drain Diode Ratings and Characteristics Parameter Min. Typ. Max. Units Test Conditions Ig Continuous Source Current - _ 274 Madified MOSFET symbol showing the integral {Body Diode) A Reverse p-n junction rectifier. a Is (Bony Diogo t a furrent - - 110 f Vsp _ Diode Forward Voltage - - 19 v Ty = 25C, Ig = 274A, Vag = OV ter Reverse Recovery Time - 950 ns Ty = 25C, Ip = 274A, di/dt < 100 Aus @ QrR_ ~Reverse Recovery Charge _ - 9.0 aC Vpp = 50V ton Forward Turn-On Time Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by Lg + Lp. Thermal] Resistance Parameter Min. Typ. Max. Units Test Conditions Fihuc Junction-to-Case - 083 Rthcs Case-to-Sink _ 0.21 - KW | Mounting surface flat, smooth, and greased RthuA Junction-to-Ambient - _ 48 Typical socket mount Repetitive Rating: Pulse width limited by 9) @ Igp s 274A, difdt < 190 Alus, KW = Ciw maximum junction temperature (see figure = Refer to current HEXFET reliability report Vop = BVpgs; Ty = 150C Wik = WIG Suggested Rg = 2.35 0 @ Vi = 50V, Starting Ty = 25C, . L ~ 93 MH, Ag = 250, J @ Pulse width < 300 us; Duty Cycle < 2% Peak IL = 274A 1-319IRFM250, JANTXV, JANTX-, 2N7225 Devices IfaR 402 102 wo on Ww Ww fom ina wi WW o fal = = = a kK & 10! GH to! aq a a fom c = 5 Oo oO z z H H < < cc cc a a > 10 4.5V > 409 20us PULSE WIDTH 20us PULSE WIDTH Tc = 25C Tc = 150C 407! 10 10! 107! 10 10! Vos, DRAIN-TO-SOURCE VOLTAGE (VOLTS) Vos: DRAIN-TO-SOURCE VOLTAGE (VOLTS) Fig. 1 Typical Output Characteristics, Tc = 25C Fig. 2 Typical Output Characteristics, Tc = 150C Mw (NORMALIZED) DRAIN-TO-SOURCE ON RESISTANCE Ip. DRAIN CURRENT (AMPERES) So. Vps = 5OV 2 20us PULSE WIDTH 00 Veg = 10 260-40 -20.0 20 40 60 80 400 120 140 160 Vgg. GATE-TO-SOURCE VOLTAGE (VOLTS) Ty. JUNCTION TEMPERATURE ( C) Fig. 3 Typical Transfer Characteristics Fig. 4 Normalized On-Resistance Vs. Temperature |-320IaR 7000 Ves = OV, f = 1MHZ Ciss = Cgs + Cga: Cds SHORTED 6000 Crsg = Cqg Cys + = 5000 2 lu Ciss & 4000 << KE WH & 3000 & Ga Coss - 2006 oO 1000 Crss 0 10 401 Vpsg DRAIN-TO-SOURCE VOLTAGE (VOLTS) Fig. 5 Typical Capacitance Vs. Drain-to-Source Voltage 102 101 Isp, REVERSE DRAIN CURRENT (AMPERES) Ves = OV 2.5 0 105 . 1.0 1. 2.0 Vep. SOURCE-TO-DRAIN VOLTAGE (VOLTS) Fig. 7 Typical Source-Drain Diode Forward Voltage 1-321 IRFM250, JANTXV, JANTX-, 2N7225 Devices 20 - oad ao nw a Vgg. GATE-TO-SOURCE VOLTAGE (VOLTS) eS FOR TEST CIRCUIT SEE FIGUAE 14 0 25 50 75 100 125 Qg. TOTAL GATE CHARGE {nC) 150 Fig. 6 Typical Gate Charge Vs. Gate-to-Source Voltage ra 5 w ul e Oo mm a tw uw hw Ip. ORAIN CURRENT (AMPERES ~ o 5 T 2] Ty=150C 0.4 LSINGLE PULSE 04? 5 4 @ 5 49 2 5 4 5 103 Vpg. DRAIN-TO-SOURCE VOLTAGE (VOLTS) Fig. 8 Maximum Safe Operating AreaIRFM250, JANTXV, JANTX-, 2N7225 Devices IaR 2 cO.t wv lJ w Zz oO a wy Llu x _ - =z 1076 Fa re | a efel | NOTES: 4. DUTY FACTOR, D=ty/to 10-3 2. PEAK Ty=Ppw X Zthuc * Te 1079 1074 1073 1072 0.41 4 10 ty. RECTANGULAR PULSE DURATION (SECONDS) Fig. 9 Maximum Effective Transient Thermal Impedance, Junction-to-Case Vs. Pulse Duration Rp Vos A D.U.T. ) a T. Yoo 8 yt 10V oi Pulse Width sis S Duty Factor <0.1% = = E Gi Fig. 11a Switching Time Test Circuit g oO a a ws \ [7 a 90% [ 2 10% 0 a 25 50 75 400 4 4 Ves To, CASE TEMPERATURE ( C) tajon tr tayorn te Fig. 10 Maximum Drain Current Vs. Case Fig. 11b Switching Time Waveforms Temperature 1-322TaR IRFM250, JANTXV, JANTX-, 2N7225 Devices Vv IH Vary tp to obtain 0.500 required peak I, PEAK I, = 27.4A Voo = 50V 0.400 0.300 0.200 0.100 Eas, SINGLE PULSE ENERGY (J) . 5 50 75 1 125 150 STARTING Tj, JUNCTION TEMPERATURE (C) Fig. 12 Maximum Avalanche Energy Vs. Starting Fig. 12b Unclamped Inductive Waveforms Junction Temperature @ Driver Gate Drive _ PW g .,,, | Period + Period + Circuit Layout Considerations PW * Low Stray inductance ody 10Vv" @ * Ground Plane j os * * Low Leakage Inductance ce i} DUT. ; Current Transformer D.U.T. Ign Waveform / dvidt Reverse -4 Body Diode Forwards + Recovery Current | Current , 4 @ D.U.T. Vpg Wavetorm ' Body Diode; (Forward Drop q Re-Applied -~ ees or - ; Voltage @ Driver a Voo Re i) 4 + dv/dt controlled by R | Diode Recovery it * Isp controlled by Duty Factor D 1+ @ Inductor Current dv/dt + Driver compliment of D.U.T. Yoo (N-Channel) ee ee ceria 2a *D.U.T. - Device Under Test Ripple < 5% "Vas = 5V for Logic Level Devices Fig. 13 Peak Diode Recovery dv/dt Test Circuit 1-323IRFM250, JANTXV, JANTX-, 2N7225 Devices Current Regulator IaR [ Same Type ~ T | as D.U.T. f | 50 4 | 32 skal 1 #) 12 . | LI 1 por Le Le ee i + V Qc } D.U.T. T- DS 19 +) L. Qe Ves AL amaff Ve po Ig Ib Charge Current Sampling Resistors Fig. 14a Basic Gate Charge Waveform Fig. 14b Gate Charge Test Circuit [a -78 (0. 13.84 (0.545) -B- area! 73,50 (0.535) 6:80 (0.260) 3.53 (0.139) AR 21.98 20.95 (0,825) (0.865) 73.59 (0-505) f } " BZ haw 1.14 (0.045) | 4.83 (0.190) 3K 4.01 (0.158) 0.89 (0.035) 4.01 (0.158) 3.81 (0.150) | a @: 150) ee ( SOTO) 3.87 (0. 150) LEGEND 1 DRAIN 2 SOURCE 3 GATE NOTES: 1 DIMENSIONING & TOLERANCING PER ANSI Y14.5M - 1982. 2 ALL DIMENSIONS ARE SHOWN IN MILLIMETERS (INCHES) 3 LEADFORM iS AVAILABLE IN EITHER ORIENTATION: 17.40 (0.685) 16.89 (0.665) 5-32 (0.249) ~ 13. safer (0.545) 20.32 (0.800) 20.07 07 07a 790) pp 20-50 (0.020) Gb] CLAD] 8} | @ 0.25 (0.010) QC EXAMPLE: IRFM250D EXAMPLE: IRFM250U 27 (0.050) 4 1. 1.02 (0.040) 1,52 (0.060) R MIN. Fig. 15 Optional Leadforms for Outline TO-254 BERYLLIA WARNING PER MIL-S-19500 Packages containing beryllia shall not be ground, sandblasted, machined, or have other operations performed on them which will produce beryllia or berylilum dust. Furthermore, berytlium oxide packages shall not be placed in acids that will produce fumes containing beryllium. 1-324