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ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor's product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. "Typical" parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. BSS138W N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancement mode field effect transistor. These products have been designed to minimize on-state resistance while provide rugged, reliable, and fast switching performance.These products are particularly suited for low voltage, low current applications such as small servo motor control, power MOSFET gate drivers, and other switching applications. * RDS(ON) = 3.5 @ VGS = 10V, ID = 0.22A RDS(ON) = 6.0 @ VGS = 4.5V, ID = 0.22A * High density cell design for extremely low RDS(ON) * Rugged and Reliable * Compact industry standard SOT-323 surface mount package D S G SOT-323 Marking : 138 Absolute Maximum Ratings Symbol TA = 25C unless otherwise noted Parameter Value Units VDSS Drain-Source Voltage 50 V VGSS Gate-Source Voltage 20 V 0.21 0.84 A A -55 to +150 C 300 C ID Drain Current TJ, TSTG TL - Continuous - Pulsed (Note1) Operating and Storage Junction Temperature Range Maximum Lead Temperature for Soldering Purposes, 1/16" from Case for 10 Seconds Thermal Characteristics Symbol PD RJA Value Units Maximum Power Dissipation Derate Above 25C Parameter (Note1) 340 2.72 mW mW/C Thermal Resistance, Junction to Ambient (Note1) 367 C/W Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity 138 BSS138W 7'' 8mm 3000 units (c) 2010 Fairchild Semiconductor Corporation BSS138W Rev. A0 www.fairchildsemi.com 1 BSS138W -- N-Channel Logic Level Enhancement Mode Field Effect Transistor December 2010 Symbol TA = 25C unless otherwise noted Parameter Test Condition Min. Typ. Max. Units Off Characteristics BVDSS BVDSS TJ Drain-Source Breakdown Voltage VGS = 0V, ID = 250A 50 Breakdown Voltage Temperature ID = 250A, Referenced to 25C Coefficient V 71 mV/C IDSS Zero Gate Voltage Drain Current VDS = 50V, VGS = 0V VDS = 50V, VGS = 0V, TJ = 125C VDS = 30V, VGS = 0V 0.5 5 100 A A nA IGSS Gate-Body Leakage VGS = 20V, VDS = 0V 100 nA 1.5 V On Characteristics (Note2) VGS(th) Gate Threshold Voltage VDS = VGS, ID = 1mA VGS(th) TJ Gate Threshold Voltage Temperature Coefficient ID = 1mA, Referenced to 25C -3.9 RDS(ON) Static Drain-Source On-Resistance VGS = 10V, ID = 0.22A VGS = 4.5V, ID = 0.22A VGS = 10V, ID = 0.22A, TJ=125C 1.17 1.36 2.16 On-State Drain Current VGS = 10V, VDS = 5V 0.2 A Forward Transconductance VDS = 10V, ID = 0.22A 0.12 S ID(ON) gFS 0.8 1.3 mV/C 3.5 6.0 5.8 Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance RG Gate Resistance VDS = 25V, VGS = 0V, f = 1.0MHz VGS = 15mV, f = 1.0MHz 38 pF 5.9 pF 3.5 pF 11 Switching Characteristics (Note2) td(on) Turn-On Delay Time 2.3 5 tr Turn-On Rise Time 1.9 18 ns ns td(off) Turn-Off Delay Time 6.7 36 ns 6.5 14 ns tf Turn-Off Fall Time Qg Total Gate Change Qgs Gate-Source Change Qgd Gate-Drain Change VDD = 30V, ID = 0.29A, VGS = 10V, RGEN = 6 1.1 VDS = 25V, ID = 0.22A, VGS = 10V 0.12 nC nC 0.22 nC Drain-Source Diode Characteristics and Maximum Ratings IS VSD Maximum Continuous Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage VGS = 0V, IS = 0.44A (Note2) 0.22 A 1.4 V Notes: 1. 367C/W when mounted on a minimum pad. 2. Pulse Test: Pulse Width 300s, Duty Cycle 2.0% (c) 2010 Fairchild Semiconductor Corporation BSS138W Rev. A0 www.fairchildsemi.com 2 BSS138W -- N-Channel Logic Level Enhancement Mode Field Effect Transistor Electrical Characteristics Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 3.5 RDS(on), () Drain-Source On-Resistance ID. Drain-Source Current (A) 2.0 VGS = 10V 1.5 6V 4.5V 3.5V 1.0 3V 0.5 2.5V 3.0 2.5 4.5V 4V 3V VGS = 2.5V 2.0 3.5V 1.5 1.0 10V 6V 2V 0.0 0.0 0.5 1.0 1.5 2.0 2.5 0.5 0.0 3.0 0.2 0.4 Figure 3. On-Resistance Variation with Temperature. 1.0 4.0 ID = 110 mA VGS = 10V 3.5 ID = 220 mA RDS(on) () Drain-Source On-Resistance RDS(on) () Normalized Drain-Source On-Resistance 0.8 Figure 4. On-Resistance Variation with Gate-to-Source Voltage. 2.5 2.0 1.5 1.0 3.0 o TA = 125 C 2.5 2.0 1.5 o TA = 25 C 1.0 0.5 0.0 0.5 -50 0 50 100 0 150 2 4 o Figure 5. Drain-Source On Voltage with Temperature. 10 1000 VGS = 10V IS. Reverse Drain Current [mA] VGS = 0 V 1.6 o TA = 125( C) 1.2 o TA = 25( C) 0.8 0.4 o TA = -55( C) 0.1 0.2 0.3 0.4 0.5 o TA=150 C 100 o 10 TA=25 C 1 o TA=-55 C 0.1 0.0 0.6 ID. Drain Current (A) 0.2 0.4 0.6 0.8 1.0 1.2 VSD. Body Diode Forward Voltage [V] (c) 2010 Fairchild Semiconductor Corporation BSS138W Rev. A0 8 Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. 2.0 0.0 0.0 6 VGS. Gate to Source Voltage(V) TJ. Junction Temperature ( C) VDS. Drain-Source On Voltage (V) 0.6 ID. Drain-Source Current(A) VDS. Drain-Source Voltage (V) www.fairchildsemi.com 3 BSS138W -- N-Channel Logic Level Enhancement Mode Field Effect Transistor Typical Performance Characteristics Figure 7. Gate Charge Characteristics. Figure 8. Capacitance Characteristics. 10 100 CISS, COSS, CRSS. Capacitance (pF) VGS. Gate-Source Voltage (V) ID = 220mA 8 VDS = 8V 6 VDS = 25V VDS = 30V 4 2 0 0.0 f = 1MHZ VGS = 0V 80 60 CISS 40 COSS 20 CRSS 0 0.2 0.4 0.6 0.8 1.0 1.2 0 10 Qg. Gate Charge (nC) 40 50 Figure 10. Single Pulse Maximum Power Dissipation. 1 10 P(pk), Peak Transient Power (W) 5 0 10 ID, Drain Current [A] 30 VDS. Voltage Bias (V) Figure 9. Maximum Safe Operating Area. 100s 1ms 10ms -1 10 100ms 1s DC RDS(on) Limit -2 10 VGS=10V Single Pulse o Rthja=367 C/W o Ta = 25 C -3 10 20 -1 0 10 1 10 4 3 2 1 0 1E-3 2 10 10 VDS, Drain-Source Voltage [V] Single Pulse o Rthja=367 C/W TA=25 0.01 0.1 1 10 100 t1, Time(sec) r(t), Normalized Transient Thermal Resistance Figure 11. Transient Thermal Response Curve. 1 50% Rthja(t)=r(t)*Rthja o Rthja=367 C/W 30% 0.1 10% 5% 2% D=1% Single Pulse 0.01 1E-4 1E-3 0.01 0.1 1 10 100 1000 t1, time(sec) (c) 2010 Fairchild Semiconductor Corporation BSS138W Rev. A0 www.fairchildsemi.com 4 BSS138W -- N-Channel Logic Level Enhancement Mode Field Effect Transistor Typical Performance Characteristics (Continued) 2.000.20 SYMM C L A 3 0.60 MIN 3 B 1.250.10 1 1.80 2 1 0.40 0.25 (0.20) 0.65 0.10 0.65 2 1.30 A B 0.50 MIN 1.30 LAND PATTERN RECOMMENDATION SEE DETAIL A 1.00 0.80 1.10 0.80 (0.425) 0.10 0.00 C 0.10 C 2.100.30 SEATING PLANE NOTES: UNLESS OTHERWISE SPECIFIED (R0.10) 0.26 0.10 SEATING PLANE 0.30 0.10 DETAIL A SCALE: 2X 30 0 A) THIS PACKAGE CONFORMS TO EIAJ SC-70. B) ALL DIMENSIONS ARE IN MILLIMETERS. C) DIMENSIONS DO NOT INCLUDE BURRS OR MOLD FLASH. MOLD FLASH OR BURRS DOES NOT EXCEED 0.10MM. D) DIMENSIONING AND TOLERANCING PER ASME Y14.5M-2009. E) DRAWING FILE NAME: MKT-MAA03AREV2 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. 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