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BSS138W — N-Channel Logic Level Enhancement Mode Field Effect Transistor
© 2010 Fairchild Semiconductor Corporation www.fairchildsemi.com
BSS138W Rev. A0 1
December 2010
BSS138W
N-Channel Logic Level Enhancement Mode Field Effect Transistor
Absolute Maximum Ratings TA = 25°C unless otherwise noted
Thermal Characteristics
Package Marking and Ordering Information
Symbol Parameter Value Units
VDSS Drain-Source Voltage 50 V
VGSS Gate-Source Voltage ±20 V
ID Drain Current - Continuous (Note1)
- Pulsed 0.21
0.84 A
A
TJ, TSTG Operating and Storage Junction Temperature Range -55 to +150 °C
TLMaximum Lead Temperature for Solderin g
Purposes, 1/16” from Case for 10 Seconds 300 °C
Symbol Parameter Value Units
PDMaximum Power Dissipation (Note1)
Derate Above 25°C340
2.72 mW
mW/°C
RθJA Thermal Resistance, Junction to Ambient (Note1) 367 °C/W
Device Marking Device Reel Size Tape width Quantity
138 BSS138W 7’’ 8mm 3000 units
S
D
G
SOT-323
Marking : 138
Features
•R
DS(ON) = 3.5Ω @ VGS = 10V, ID = 0.22A
RDS(ON) = 6.0Ω @ VGS = 4.5V, ID = 0.22A
• High density cell design for extremely low RDS(ON)
• Rugged and Reliable
• Compact industry standard SOT-323 surface mount
package
General Description
These N-Channel enhancement mode field effect
transistor. These products have been designed to
minimize on-state resistance while provide rugged,
reliable, and fast switching performance.These prod-
ucts are particularly suited for low voltage, low current
applications such as small servo moto r control, power
MOSFET gate drivers, and other switching applica-
tions.
BSS138W — N-Channel Logic Level Enhancement Mode Field Effect Transistor
© 2010 Fairchild Semiconductor Corporation www.fairchildsemi.com
BSS138W Rev. A0 2
Electrical Characteristics TA = 25°C unless otherwise noted
Notes:
1. 367°C/W when mounted on a minimum pad.
2. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2.0%
Symbol Parameter Test Condition Min. Typ. Max. Units
Off Characteristic s
BVDSS Drain-Source Breakdown Voltage VGS = 0V, ID = 250μA50 V
ΔBVDSS
ΔTJ
Breakdown Voltage Temperature
Coefficient ID = 250μA, Referenced to 25°C71mV/°C
IDSS Zero Gate Voltage Drain Current VDS = 50V, VGS = 0V
VDS = 50V, VGS = 0V, TJ = 125°C
VDS = 30V, VGS = 0V
0.5
5
100
μA
μA
nA
IGSS Gate-Body Leakage VGS = ±20V, VDS = 0V ±100 nA
On Characteristics (Note2)
VGS(th) Gate Threshold Voltage VDS = VGS, ID = 1mA 0.8 1.3 1.5 V
ΔVGS(th)
ΔTJ
Gate Threshold Voltage
Temperature Coefficient ID = 1mA, Referenced to 25°C-3.9mV/°C
RDS(ON) Static Drain-Source
On-Resistance VGS = 10V, ID = 0.22A
VGS = 4.5V, ID = 0.22A
VGS = 10V, ID = 0.22A, TJ=125°C
1.17
1.36
2.16
3.5
6.0
5.8
Ω
Ω
Ω
ID(ON) On-State Drain Current VGS = 10 V, VDS = 5V 0.2 A
gFS Forward Transconductance VDS = 10V, ID = 0.22A 0.12 S
Dynamic Characteristics
Ciss Input Capacitance VDS = 25V, VGS = 0V, f = 1.0MHz 38 pF
Coss Output Capacita nce 5.9 pF
Crss Reverse Transfer Capacitance 3.5 pF
RGGate Resistance VGS = 15mV, f = 1.0MHz 11 Ω
Switching Characteristics (Note2)
td(on) Turn-On D elay Time
VDD = 30V, ID = 0.29A,
VGS = 10V, RGEN = 6Ω
2.3 5 ns
trTurn-On Rise Time 1.9 18 ns
td(off) Turn-Of f Delay Time 6.7 36 ns
tfTurn-Off Fall Time 6.5 14 ns
QgTotal Gate Change VDS = 25V, ID = 0.22A,
VGS = 10V
1.1 nC
Qgs Gate-Source Change 0.12 nC
Qgd Gate-Drain Change 0.22 nC
Drain-Source Diode Characterist ics and Maximum Ratings
ISMaximum Continuous Drain–Source Diode Forward Current 0.22 A
VSD Drain-Source Diode Forward
Voltage VGS = 0V, IS = 0.44A (Note2) 1.4 V
BSS138W — N-Channel Logic Level Enhancement Mode Field Effect Transistor
© 2010 Fairchild Semiconductor Corporation www.fairchildsemi.com
BSS138W Rev. A0 3
Typical Performance Characteristics
Figure 1. On-Region Chara cteristics. Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
Figure 3. On-Resistance Variation with
Temperature. Fi gure 4. On-Resistance Variation with
Gate-to-Source Voltage.
Figure 5. Drain-Source On Voltage with
Temperature. Fi gu re 6. Body Diode Forward Voltage V ariation
with Source Current and Temperature.
0.0 0.5 1.0 1.5 2.0 2.5 3.0
0.0
0.5
1.0
1.5
2.0
2V
2.5V
3V
3.5V
4.5V 6V
VGS = 10V
ID. Drain-Source Current (A)
VDS. Drain-Source Voltage (V) 0.00.20.40.60.81.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
(Ω)
6V
4V 4.5V
10V
3V 3.5V
VGS = 2.5V
RDS(on),
Drain-Source On-R esistance
ID. Drain-Source Current(A)
-50 0 50 100 150
0.5
1.0
1.5
2.0
2.5
(Ω)
VGS = 10V
ID = 220 mA
RDS(on)
Normalized Drain-Source On-Resistance
TJ. Junction Temperature (oC) 0246810
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
TA = 25oC
TA = 125oC
(Ω)
ID = 110 mA
RDS(on)
Drai n-Source On-Resistance
VGS. G ate to Source V oltage(V)
0.0 0.1 0.2 0.3 0.4 0.5 0.6
0.0
0.4
0.8
1.2
1.6
2.0
TA = 125(oC)
TA = 25(oC)
VGS = 10V
TA = -55(oC)
VDS. Drain-Source On Voltage ( V)
ID. Drain Current (A) 0.0 0.2 0.4 0.6 0.8 1.0 1.2
0.1
1
10
100
1000
TA=-55oC
VGS = 0 V
TA=150oC
TA=25oC
IS. Reverse Drain Current [mA]
VSD. Bo dy Diode Forward Voltage [V]
BSS138W — N-Channel Logic Level Enhancement Mode Field Effect Transistor
© 2010 Fairchild Semiconductor Corporation www.fairchildsemi.com
BSS138W Rev. A0 4
Typical Performance Characteristics (Continued)
Figure 7. Gate Charge Characteristics.
Figure 8. Capacitance Characteristics.
Figure 9. Maximum Safe Operat ing Area.
Figure 10. Single Pulse Maximum
Power Dissipation.
Figure 11. Transient Thermal Response Curve.
0.0 0.2 0.4 0.6 0.8 1.0 1.2
0
2
4
6
8
10
VDS = 30V
VDS = 8V
VDS = 25V
ID = 220mA
VGS. Gate-Source Voltag e (V)
Q g . Ga te Charge ( n C) 0 1020304050
0
20
40
60
80
100
CRSS
COSS
f = 1 MHZ
VGS = 0V
CISS
CISS, COSS, CRSS. Capacitance (pF)
VDS. Voltage Bias (V)
10-1 100101102
10-3
10-2
10-1
100
101
1ms
10ms
DC
1s100ms
100μs
RD S(on) Limit
VGS=10V
Single Pulse
Rthja=367oC/W
Ta = 25oC
ID, Drain Curren t [A]
VDS, Drain-Source Voltage [V]
1E-3 0.01 0.1 1 10 100
0
1
2
3
4
5
Single Pulse
Rthja=367oC/W
TA=25
P(pk), Peak Transient Power (W)
t1, Time(sec)
1E-4 1E-3 0.01 0.1 1 10 100 1000
0.01
0.1
1
50%
r(t), Normalized Transient Thermal Resistance
t1, time(sec)
Single Pulse
30%
10%
5%
2%
D=1%
Rthja(t)=r(t)*Rthja
Rthja=367oC/W
SEE DETAIL A
3
NOTES: UNLESS OTHERWISE SPECIFIED
A) THIS PACKAGE CONFORMS TO EIAJ SC-70.
B) ALL DIMENSIONS ARE IN MILLIMETERS.
C) DIMENSIONS DO NOT INCLUDE BURRS
OR MOLD FLASH. MOLD FLASH OR BURRS
DOES NOT EXCEED 0.10MM.
D) DIMENSIONING AND TOLERANCING PER
ASME Y14.5M-2009.
E) DRAWING FILE NAME: MKT-MAA03AREV2
LAND PATTERN RECOMMENDATION
SEATING
PLANE
3
11
SEATING
PLANE
22
SYMM
L
C
2.00±0.20 A
B
1.25±0.10
(0.20)
0.65
1.30
0.40
0.25 0.65
1.30
0.50 MIN
1.80
0.60 MIN
1.00
0.80
C
1.10
0.80
0.10
0.00
0.30
0.10
0.26
0.10
(0.425)
2.10±0.30
30°
0°
0.10 A B
0.10 C
SCALE: 2X
DETAIL A
(R0.10)
www.onsemi.com
1
ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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