FEATURES
*
*
*
*
Power dissipation
PCM: 0.225 W(Tamb=25OC)
Collector current
ICM: 0.6 A
Collector-base voltage
V(BR)CBO: 160 V
Operating and storage junction temperature range
TJ,Tstg:
MECHANICA DATA
*Case: Molded plastic
*Epoxy: UL 94V-O rate flame retardant
*Lead: MIL-STD-202E method 208C guaranteed
*Mounting position: Any
*Weight: 0.008 gram
SOT-23
Dimensions in inches and (millimeters)
2006-3
ELECTRICAL CHARACTERISTICS ( At TA = 25oC unless otherwise noted )
NOTES :
Max. Instantaneous Forward Voltage at IF= 10mA
CHARACTERISTICS SYMBOL UNITS
417
-
Volts
oC/WThermal Resistance Junction to Ambient
RATINGS
Zener Current ( see Table "Characteristics" )
Max. Steady State Power Dissipation (1) @TA=25oC
Max. Operating Temperature Range
Storage Temperature Range
SYMBOL
-
PD
TJ
TSTG
R JA
VF
VALUE
MAX.
-
-
TYP.
-
-
MIN.
UNITS
-
mW
-
300
1.Alumina=0.4*0.3*0.024 in. 99.5% alumina.
-55 to +150
-55 to +150
oC
oC
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25oC ambient temperature unless otherwise specified.
0.118(3.000)
0.012(0.30)
0.020(0.50)
0.003(0.080)
0.006(0.150)
0.110(2.800)
0.019(2.00)
0.071(1.80)
0.100(2.550)
0.089(2.250)
0.020(0.500)
0.012(0.300)
0.043(1.100)
0.035(0.900)
0.004(0.100)
0.000(0.000)
0.037(0.950)TYP
-55 OC to + 150OC
RECTRON
RECTRON
SEMICONDUCTOR
MMBT5550LT1
TECHNICAL SPECIFICATION
SOT-23 BIPOLAR TRANSISTORS
TRANSISTOR(NPN)
ELECTRICAL CHARACTERISTICS
(@TA=25OC unless otherwise noted)
OFF CHARACTERISTICS
ON CHARACTERISTICS
Chatacteristic
Collector-Emitter Breakdown Voltage(2) (IC= 1.0mAdc, IB= 0)
Collector-Base Breakdown Voltage (IC= 100µAdc, IE= 0)
Emitter-Base Breakdown Voltage (IE= 10µAdc, IC= 0)
Collector Cutoff Current (VCB= 100Vdc, IE= 0)
(VCB= 100Vdc, IE= 0, TA= 100OC)
DC Current Gain (IC= 1.0mAdc, VCE= 5.0Vdc)
(IC= 50mAdc, VCE= 5.0Vdc)
(IC= 10mAdc, VCE= 5.0Vdc)
V(BR)CEO 140 - Vdc
V(BR)CBO 160 - Vdc
V(BR)EBO 6.0 - Vdc
ICBO - 100
- 100
Emitter Cutoff Current (VEB= 4.0Vdc, IC= 0) IEBO - 50 nAdc
hFE
60 -
-60 250
20 -
nAdc
Symbol Min Max Unit
Vdc
VCE(sat) - 0.15
- 0.25
Vdc
VBE(sat) - 1.0
- 1.2
Base-Emitter Saturation Voltage (IC= 10mAdc, IB= 1.0mAdc)
(IC= 50mAdc, IB= 5.0mAdc)
Collector-Emitter Saturation Voltage (IC= 10mAdc, IB= 1.0mAdc)
(IC= 50mAdc, IB= 5.0mAdc)
NOTES: 2.Pluse Test : Pluse Width = 300µS, Duty Cycle = 2.0%.
µAdc
RECTRON
RECTRON
IC,COLLECTOR CURRENT (mA)
hFE, DC CURRENT GAINVCE, COLLECTOR--ENITTER VOLTAGE(VOLTS)
RATING AND CHARACTERISTICS CURVES ( MMBT5550LT1 )
Figure 1. DC Current Gain
500
5.0
10
0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100
200
30
20
300
100
50
7.0
-55
O
C
25
O
C
VCE = 1.0 V
VCE = 5.0 V
Figure 2. Collector Saturation Region
I
B, BASE CURRENT (mA)
1.0
0
0.3
0.005 0.01 0.2 0.5 1.0 2.0 20 50
0.8
0.5
0.4
0.9
0.7
0.6
0.2
0.02 0.05 0.1 10
0.1
10 mA 30 mA 100 mA
5.0
IC = 1.0 mA
FIgure 3. Collector Cut-Off Region
101
10-5 0.4 0.3 0.1
100
10-1
10-2
10-3
10-4
0.2 0 0.1 0.2 0.40.3 0.60.5
V
CE = 30 V
IC = ICES
IC, COLLECTOR CURRENT (∝A)
V,VOLTAGE (VOLTS)
REVERSE FORWARD
1.0
1.0 2.0 5.0 10 20 50 100
0.1 0.2 0.5
0.8
0.6
0.4
0.2
03.0 300.3
TJ=25
O
C
V
BE(sat) @ IC/I
B
=10
V
CE(sat) @ I
C/I
B=10
IC, COLLECT OR CURRENT (mA)
Figure 4. "On" Voltages
VBE,BASE--ETMITTER VOLTAGE (VOLTS)
T = 125
o
C
J
TJ=125
O
C
25
O
C
75
O
C
RECTRON
RECTRON
RECTRON
RECTRON
RATING AND CHARACTERISTICS CURVES ( MMBT5550LT1 )
2.5
Figure 5. Temperature Coefficients
ΘV,TEMPERATURE COEFFICIENT(mV/OC)
2.0
1.5
1.0
0.5
0
0.5
1.0 2.0 5.0 10 20 50 1000.1 0.2 0.5 3.0 30
0.3
ΘVC for VCE(sat)
ΘVB for VBE(sat)
-2.5
-2.0
-1.5
-1.0
IC,COLLECTOR CURRENT (mA)
C,CAPACITANCE (pF)
100
1.00.2 0.5 1.0 2.0 5.0 10 20
70
50
30
20
10
7.0
5.0
3.0
2.0
0.3 0.7 3.0 7.0
Figure 6. Capacitances
TJ=25
O
C
Cibo
Cobo
1000
0.3 1.0 10 20 30 50
0.50.2
t, TIME (nS)
t, TIME (nS)
10
20
30
50
100
200
300
500
2.0 100 200
3.0 5.0
IC/IB=10
TJ=25OC
tr@VCC=120V
tr@VCC=30V
VCC=120V
IC, COLLECTOR CURRENT (mA)
5000
50
100
200
300
500
3000
2000
1000
0.3 1.0 10 20 30 50
0.50.2 2.0 100 200
3.0 5.0
IC/IB=10
TJ=25OC
tf@VCC=120V
ts@VCC=120V
Figure 7. Turn-On Time Figure 8. Turn-Off Time
VR, REVERSE VOLAGE (VOLTS)
IC, COLLECTOR CURRENT (mA)
td @ VEB(off)=1.0V
TJ=-55OC to +135OC
