DS30079 Rev. 5 - 2 1 of 3 MMST3906
www.diodes.com ã Diodes Incorporated
MMST3906
PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR
·Epitaxial Planar Die Construction
·Complementary NPN Type Available
(MMST3904)
·Ultra-Small Surface Mount Package
·Available in Lead Free/RoHS Compliant Version (Note 2)
Characteristic Symbol MMST3906 Unit
Collector-Base Voltage VCBO -40 V
Collector-Emitter Voltage VCEO -40 V
Emitter-Base Voltage VEBO -5.0 V
Collector Current - Continuous (Note 1) IC-200 mA
Power Dissipation (Note 1) Pd200 mW
Thermal Resistance, Junction to Ambient (Note 1) RqJA 625 K/W
Operating and Storage and Temperature Range Tj,T
STG -55 to +150 °C
Features
Maximum Ratings @ TA= 25°C unless otherwise specified
A
M
JL
ED
BC
H
K
G
BE
C
Mechanical Data
SOT-323
Dim Min Max
A0.25 0.40
B1.15 1.35
C2.00 2.20
D0.65 Nominal
E0.30 0.40
G1.20 1.40
H1.80 2.20
J0.0 0.10
K0.90 1.00
L0.25 0.40
M0.10 0.18
a0°8°
All Dimensions in mm
·Case: SOT-323
·Case Material: Molded Plastic. UL Flammability
Classification Rating 94V-0
·Moisture Sensitivity: Level 1 per J-STD-020C
·Terminal Connections: See Diagram
·Also Available in Lead Free Plating (Matte Tin Finish
annealed over Alloy 42 leadframe). Please see Ordering
Information, Note 5, on Page 2
·Marking (See Page 2): K5N
·Ordering & Date Code Information: See Page 2
·Weight: 0.006 grams (approximate)
Note: 1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout
document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
2. No purposefully added lead.
E
B
C
SPICE MODEL: MMST3906
DS30079 Rev. 5 - 2 2 of 3 MMST3906
www.diodes.com
Electrical Characteristics @ TA = 25°C unless otherwise specified
Characteristic Symbol Min Max Unit Test Condition
OFF CHARACTERISTICS (Note 3)
Collector-Base Breakdown Voltage V(BR)CBO -40 ¾VIC= -10mA, IE = 0
Collector-Emitter Breakdown Voltage V(BR)CEO -40 ¾VIC= -1.0mA, IB = 0
Emitter-Base Breakdown Voltage V(BR)EBO -5.0 ¾VIE = -10mA, IC = 0
Collector Cutoff Current ICEX ¾-50 nA VCE = -30V, VEB(OFF) = -3.0V
Base Cutoff Current IBL ¾-50 nA VCE = -30V, VEB(OFF) = -3.0V
ON CHARACTERISTICS (Note 3)
DC Current Gain hFE
60
80
100
60
30
¾
¾
300
¾
¾
¾
IC = -100µA, VCE = -1.0V
IC = -1.0mA, VCE = -1.0V
IC = -10mA, VCE = -1.0V
IC = -50mA, VCE = -1.0V
IC = -100mA, VCE = -1.0V
Collector-Emitter Saturation Voltage VCE(SAT) ¾-0.20
-0.30 VIC= -10mA, IB = -1.0mA
IC = -50mA, IB = -5.0mA
Base-Emitter Saturation Voltage VBE(SAT) -0.65
¾
-0.85
-0.95 VIC = -10mA, IB = -1.0mA
IC = -50mA, IB = -5.0mA
SMALL SIGNAL CHARACTERISTICS
Output Capacitance Cobo ¾4.5 pF VCB = -5.0V, f = 1.0MHz, IE = 0
Input Capacitance Cibo ¾10 pF VEB = -0.5V, f = 1.0MHz, IC = 0
Input Impedance hie 2.0 12 kW
VCE = 1.0V, IC = 10mA,
f = 1.0kHz
Voltage Feedback Ratio hre 0.1 10 x 10-4
Small Signal Current Gain hfe 100 400 ¾
Output Admittance hoe 3.0 60 mS
Current Gain-Bandwidth Product fT300 ¾MHz VCE = -20V, IC = -10mA,
f = 100MHz
Noise Figure NF ¾4.0 dB VCE = -5.0V, IC = -100mA,
RS = 1.0kW, f = 1.0kHz
SWITCHING CHARACTERISTICS
Delay Time td¾35 ns VCC = -3.0V, IC = -10mA,
VBE(off) = 0.5V, IB1 = -1.0mA
Rise Time tr¾35 ns
Storage Time ts¾225 ns VCC = -3.0V, IC = -10mA,
IB1 = IB2 = -1.0mA
Fall Time tf¾75 ns
Ordering Information (Note 4)
Device Packaging Shipping
MMST3906-7 SOT-323 3000/Tape & Reel
Notes: 3. Short duration test pulse used to minimize self-heating effect.
4. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
5. For Lead Free/RoHS Compliant version part number, please add "-F" suffix to the part number above. Example: MMST3906-7-F.
Marking Information
K5N
YM
K5N = Product Type Marking Code
YM = Date Code Marking
Y = Year ex: N = 2002
M = Month ex: 9 = September
Date Code Key
Month Jan Feb March Apr May Jun Jul Aug Sep Oct Nov Dec
Code 1234567
89 OND
Year 1998 1999 2000 2001 2002 2003 2004 2005 2006 2007 2008 2009
Code JKLMNPR
ST U VW
DS30079 Rev. 5 - 2 3 of 3 MMST3906
www.diodes.com
0.5
0.6
0.7
0.8
0.9
1
.
0
1 10 100
V , BASE-EMITTER (V)
BE(SAT)
SATURATION VOLTAGE
I , COLLECTOR CURRENT (mA)
C
Fig. 5, Typical Base-Emitter
Saturation Volta
g
e vs. Collector Current
IC
IB=10
0.01
0.1
10
1
110 100 1000
V , COLLECTOR-EMITTER (V)
CE(SAT)
SATURATION VOLTAGE
I , COLLECTOR CURRENT (mA)
C
Fig. 4, Typical Collector-Emitter Saturation Voltage
vs. Collector Current
IC
IB= 10
1
10
1000
100
0.1 110 1000
100
h , DC CURRENT GAIN
FE
I , COLLECTOR CURRENT (mA)
C
Fig. 3, Typical DC Current Gain vs
Collector Current
T = -25°C
A
T = +25°C
A
T = 125°C
A
V = 1.0V
CE
1
100
10
0.1 110 100
C , INPUT CAPACITANCE (pF)
IBO
C , OUTPUT CAPACITANCE (pF)
OBO
V , COLLECTOR-BASE VOLTAGE (V)
CB
Fig. 2, Input and Output Capacitance vs.
Collector-Base Volta
g
e
f= 1MHz
Cibo
Cobo
0
50
100
25 50 75 100 125 150 175 200
P , POWER DISSIPATION (mW)
D
T , AMBIENT TEMPERATURE (°C)
A
Fig. 1, Max Power Dissipation vs
Ambient Tem
p
erature
150
200
250
300
350
0
