PSMN013-30MLC,115 - NXP Semiconductors

1. Product profile

1.1 General description

Logic level enhancement mode N-cha nnel MOSFET in LFP AK33 p ackage. This product is

designed and qualified for use in a wide ran ge of industrial, communications and domestic

equipment.

1.2 Features and benefits

Low parasitic inductance and

resistance

Optimised for 4.5V Gate drive utilising

NextPower Superjunction technology

Ultra low QG, QGD, & QOSS for high

system efficiencies at low and high

loads

1.3 Applications

DC-to-DC converters

Load switching

Synchronous buck regulator

1.4 Quick reference data

PSMN013-30MLC

N-channel 30 V 13.6 mΩ logic level MOSFET in LFPAK33

using NextPower Technology

Rev. 4 — 15 June 2012 Product data sheet

LFPAK33

Table 1. Quick reference data

Symbol Parameter Conditions Min Typ Max Unit

VDS drain-source voltage Tj = 25 °C - - 30 V

IDdrain current Tmb =25°C; V

GS =10V; see Figure 1 --39A

Ptot total power dissipation Tmb =25°C; see Figure 2 --38W

Tjjunction temperature -55 - 175 °C

Static characteristics

RDSon drain-source on-state

resistance VGS =4.5V; I

D=10A; T

j=25°C;

see Figure 10 -14.6516.9mΩ

VGS =10V; I

D=10A; T

j=25°C;

see Figure 10 -11.813.6mΩ

Dynamic characteristics

QGD gate-drain charge VGS =4.5V; I

D=10A; V

DS =15V;

see Figure 12 ; see Figure 13 -1-nC

QG(tot) total gate charge VGS =4.5V; I

D=10A; V

DS =15V;

see Figure 12 ; see Figure 13 -3.7-nC

Product data sheet Rev. 4 — 15 June 2012 2 of 14

NXP Semiconductors PSMN013-30MLC

N-channel 30 V 13.6 mΩ logic level MOSFET in LFPAK33 using NextPower Technology

2. Pinning information

3. Ordering information

4. Limiting values

Table 2. Pinning information

Pin Symbol Description Simplified outline Graphic symbol

1Ssource

SOT1210 (LFPAK33)

2Ssource

3Ssource

4 G gate

mb D mounting base; connected to

drain

1432

mbb076

Table 3. Ordering informatio n

Type number Package

Name Description Version

PSMN013-30MLC LFPAK33 P lastic single ended surface mounted package (LFPAK33);

4 leads SOT1210

Table 4. Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter Conditions Min Max Unit

VDS drain-source voltage Tj = 25 °C - 30 V

VGS gate-source voltage -20 20 V

IDdrain current VGS =10V; T

mb =25°C; see Figure 1 -39A

VGS =10V; T

mb = 100 °C; see Figure 1 -28A

IDM peak drain current pulsed; tp≤10 µs; Tmb =25°C;

see Figure 4 - 157 A

Ptot total power dissipation Tmb =25°C; see Figure 2 -38W

Tstg storage temperature -55 175 °C

Tjjunction temperature -55 175 °C

Tsld(M) peak soldering temperature - 260 °C

VESD electrostatic discharge voltage MM (JEDEC JESD22-A115) 100 - V

Source-drain diode

ISsource current Tmb =25°C - 34 A

ISM peak source current pulsed; tp≤10 µs; Tmb = 25 °C - 157 A

Avalanche ru ggedness

EDS(AL)S non-repetitive drain-source

avalanche energy VGS =10V; T

j(init) =25°C; I

D=39A;

Vsup ≤30 V; RGS =50Ω; unclamped;

see Figure 3

-5.6mJ

Product data sheet Rev. 4 — 15 June 2012 3 of 14

NXP Semiconductors PSMN013-30MLC

N-channel 30 V 13.6 mΩ logic level MOSFET in LFPAK33 using NextPower Technology

Fig 1. Continuous drain current as a function of

mounting base temperature Fig 2. Normalized total power dissipation as a

function of mounting ba s e temperature

Fig 3. Single pulse avalanche rating; avalanche current as a function of avalan che time

003aaj396

0 50 100 150 200

(°C)

(A)

Tmb (°C)

0 20015050 100

03na19

120

Pder

(%)

003aaj397

-1

-3

-2

-1

1 10

(ms)

(A)

(1)

(2)

Product data sheet Rev. 4 — 15 June 2012 4 of 14

NXP Semiconductors PSMN013-30MLC

N-channel 30 V 13.6 mΩ logic level MOSFET in LFPAK33 using NextPower Technology

5. Thermal characteristics

Fig 4. Safe o perating area; continuous and peak drain currents as a function of drain-s ou rce voltage

003aaj398

-1

1 10 10

(V)

(A)

Lim it R

DSon

= V

/ I

100 μs

10 ms

=10 μs

100 ms

1 ms

Table 5. Thermal characteristics

Symbol Parameter Conditions Min Typ Max Unit

Rth(j-mb) thermal resistance from

junction to mounting base see Figure 5 - 3.8 3.99 K/W

Fig 5. Transient thermal impedance from junction to mounting base as a function of pulse duration

003aaj399

single shot

0.2

0.1

0.05

-2

-1

-5

-4

-3

-2

-1

(s)

th(j-mb)

(K/W) δ = 0.5

0.02

-6

δ =

Product data sheet Rev. 4 — 15 June 2012 5 of 14

NXP Semiconductors PSMN013-30MLC

N-channel 30 V 13.6 mΩ logic level MOSFET in LFPAK33 using NextPower Technology

6. Characteristics

Table 6. Characteristics

Symbol Parameter Conditions Min Typ Max Unit

Static characteristics

V(BR)DSS drain-source

breakdown voltage ID=250µA; V

GS =0V; T

j=25°C 30--V

ID=250µA; V

GS =0V; T

j= -55 °C 27 - - V

VGS(th) gate-source threshold

voltage ID=1mA; V

DS =V

GS; Tj= 25 °C 1.3 1.66 1.95 V

∆VGS(th)/∆T gate-source threshold

voltage variation with

temperature

--4-mV/K

IDSS drain leakage current VDS =30V; V

GS =0V; T

j=25°C --1µA

VDS =30V; V

GS =0V; T

j= 150 °C - - 100 µA

IGSS gate leakage current VGS =16V; V

DS =0V; T

j= 25 °C - - 100 nA

VGS =-16V; V

DS =0V; T

j= 25 °C - - 100 nA

RDSon drain-source on-state

resistance VGS =4.5V; I

D=10A; T

j=25°C;

see Figure 10 - 14.65 16.9 mΩ

VGS =4.5V; I

D=10A; T

j=150°C;

see Figure 10 ; see Figure 11 - - 28.75 mΩ

VGS =10V; I

D=10A; T

j=25°C;

see Figure 10 - 11.8 13.6 mΩ

VGS =10V; I

D=10A; T

j= 150 °C;

see Figure 11 ; see Figure 10 - - 22.95 mΩ

RG gate resistance f = 1 MHz 0.85 1.7 3.4 Ω

Dynamic characteristics

QG(tot) total gate charge ID=10A; V

DS =15V; V

GS =10V;

see Figure 12 ; see Figure 13 -8-nC

ID=10A; V

DS =15V; V

GS =4.5V;

see Figure 12 ; see Figure 13 -3.7-nC

ID=0A; V

DS =0V; V

GS =10V -7.4-nC

QGS gate-source charge ID=10A; V

DS =15V; V

GS =4.5V;

see Figure 12 ; see Figure 13 -1.2-nC

QGS(th) pre-threshold

gate-source charge -0.8-nC

QGS(th-pl) post-threshold

gate-source charge -0.4-nC

QGD gate-drain charge - 1 - nC

VGS(pl) gate-source plateau

voltage ID=10A; V

DS =15V; see Figure 12;

see Figure 13 -2.6-V

Ciss input capacitance VDS =15V; V

GS = 0 V; f = 1 MHz;

Tj=25°C; see Figure 14 - 519 - pF

Coss output capacitance - 131 - pF

Crss reverse transfer

capacitance -37-pF

Product data sheet Rev. 4 — 15 June 2012 6 of 14

NXP Semiconductors PSMN013-30MLC

N-channel 30 V 13.6 mΩ logic level MOSFET in LFPAK33 using NextPower Technology

td(on) turn-on delay time VDS =15V; R

L=1.5Ω; VGS =4.5V;

RG(ext) =5Ω

-7-ns

trrise time - 9.8 - ns

td(off) turn-off delay time - 9.6 - ns

tffall time - 5.5 - ns

Qoss output charge VGS =0V; V

DS =15V; f=1MHz;

Tj=25°C -3.7-nC

Source-drain diode

VSD source-drain voltage IS=10A; V

GS =0V; T

j=25°C;

see Figure 15 - 0.86 1.1 V

trr reverse recovery time IS=10A; dI

S/dt = -100 A/ µs; VGS =0V;

VDS =15V - 13.4 - ns

Qrrecovered charge - 6.6 - nC

tareverse recovery rise

time VGS =0V; I

S=10A; dI

S/dt = -100 A/µs;

VDS =15V; see Figure 16 -8.6-ns

tbreverse recovery fall

time -4.8-ns

Table 6. Characteristics …continued

Symbol Parameter Conditions Min Typ Max Unit

Fig 6. Output characteristics; drain current as a

function of drain-source voltage; typical values Fig 7. Drain-source on-state resistance as a function

of gate-source voltage; typical values

003aaj400

01234

(V)

(A)

(V) =

2.6

2.8

3.5

4.5 10

2.4

2.2

003aaj401

0 4 8 12 16

(V)

DSon

(mΩ)

Product data sheet Rev. 4 — 15 June 2012 7 of 14

NXP Semiconductors PSMN013-30MLC

N-channel 30 V 13.6 mΩ logic level MOSFET in LFPAK33 using NextPower Technology

Fig 8. Forward transconductance as a function of

drain current; typical values Fig 9. Tran sfer characteristics; drain current as a

function of gate-s ourc e vol tage; typical values

Fig 10. Drain-source on-state resistance as a function

of drain current; typical values Fig 11. Normalized drain-source on-state resistance

factor as a function of junction temperature

003aaj402

0 10203040

(A)

(S)

003aaj403

01234

(V)

(A)

= 25 °C

= 150 °C

003aaj406

515253545

(A)

DSon

(mΩ)

4.5

(V) = 10

2.8 3

3.5

003aaj407

0.5

1.5

-60 0 60 120 180

(°C)

=4.5V

10V

Product data sheet Rev. 4 — 15 June 2012 8 of 14

NXP Semiconductors PSMN013-30MLC

N-channel 30 V 13.6 mΩ logic level MOSFET in LFPAK33 using NextPower Technology

Fig 12. Gate charge waveform definitions Fig 13. Gate-source voltage as a function of gate

charge; typical values

Fig 14. Input, output and reverse transfer capacitances

as a function of drain-source voltage; typical

values

Fig 15. Source current as a fu nction of source-drain

voltage; typical values

003aaa508

VGS

VGS(th)

QGS1 QGS2

QGD

VDS

QG(tot)

QGS

VGS(pl)

003aaj408

0246810

(nC)

(V)

24 V

6 V

15 V

003aaj409

-1

1 10 10

(V)

(pF)

iss

rss

oss

003aaj410

0 0.3 0.6 0.9 1.2

(V)

(A)

= 25 °C

= 150°C

Product data sheet Rev. 4 — 15 June 2012 9 of 14

NXP Semiconductors PSMN013-30MLC

N-channel 30 V 13.6 mΩ logic level MOSFET in LFPAK33 using NextPower Technology

Fig 16. Reverse recovery timing definition

003aaf 444

t (s)

(A)

0.25 I

Product data sheet Rev. 4 — 15 June 2012 10 of 14

NXP Semiconductors PSMN013-30MLC

N-channel 30 V 13.6 mΩ logic level MOSFET in LFPAK33 using NextPower Technology

7. Package outline

Fig 17. Package outline SOT1210 (LFPAK33)

References

Outline

version

European

projection Issue date

IEC JEDEC JEITA

SOT1210

sot1210_po

11-12-19

12-03-12

Unit(1)

max

nom

min

0.90 0.10 0.35 0.20 0.30 2.70

0.65

Dimensions

Note

1. Plastic or metal protrusions of 0.15 mm per side are not included.

Plastic single ended surface mounted package (LFPAK33); 8 leads SOT1210

A1b

0.35

b1cc

1D(1) θD1E(1) E1e

0.65

e1H

3.40 2.452.35 3.40

0.25

0.50

0.20 0.10

3.20 2.000.80 0.00 0.25 0.10 0.20 2.500.25 0°

1.90 3.20 0.13 0.30

8°

0 5 mm2.5

scale

mounting

base

detail X

Lp C

Product data sheet Rev. 4 — 15 June 2012 11 of 14

NXP Semiconductors PSMN013-30MLC

N-channel 30 V 13.6 mΩ logic level MOSFET in LFPAK33 using NextPower Technology

8. Revision history

Table 7. Revision history

Document ID Release date Data sheet status Change notice Supersedes

PSMN013-30MLC v.4 20120615 Product data sheet - PSMN013-30MLC v.3

Modifications: •Status changed from objective to product.

•Va rious changes to content.

PSMN013-30MLC v.3 20120607 Objective data sheet - PSMN013-30MLC v.2

Product data sheet Rev. 4 — 15 June 2012 12 of 14

NXP Semiconductors PSMN013-30MLC

N-channel 30 V 13.6 mΩ logic level MOSFET in LFPAK33 using NextPower Technology

9. Legal information

9.1 Data sheet status

[1] Please consult the most recently issued document before initiating or completing a design.

[2] The term 'short data sheet' is explained in section "Definitions".

[3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product

status information is available on the Internet at URLhttp://www.nxp.com.

9.2 Definitions

Preview — The document is a preview version only. The document is still

subject to formal approval, which may result in modificati ons or additions.

NXP Semiconductors does not give any representations or warranties as to

the accuracy or completeness of informati on included herein and shall have

no liability for the consequences of use of such info rmation.

Draft — The document is a draft version only. The content is still under

internal review and subject to formal approval, which may result in

modifications or additions. NXP Semiconductors does not give any

representations or warranties as to the accuracy or completeness of

information included herein and shall have no liab ility for the consequences of

use of such information.

Short data sheet — A short data sheet is an extract from a full data sheet

with the same product type number(s) and tit le. A short data sh eet is intended

for quick reference only and shou ld not be rel ied u pon to cont ain det ailed and

full information. For detailed and full information see the relevant full data

sheet, which is available on request via the local NXP Semiconductors sales

office. In case of any inconsistency or conflict with the short data sheet, the

full data sheet shall pre vail.

Product specifica t io n — The information and data provided in a Product

data sheet shall define the specification of the product as agreed be tween

NXP Semiconductors and its customer, unless NXP Semiconductors and

customer have explicitly agreed otherwise in writing. In no event however,

shall an agreement be valid in which the NXP Semiconductors product is

deemed to off er functions and qualities beyond those described in the

Product data sheet.

9.3 Disclaimers

Limited warranty and liability — Information in this document is be lieved to

be accurate and reliable. However, NXP Semiconductors does not give any

representations or warranties, expressed or implied, as to the accuracy or

completeness of such information and shall have no liability for the

consequences of use of such information. NXP Se miconductors takes no

responsibility for the content in this document if provided by an inf ormation

source outside of NXP Semiconductors.

In no event shall NXP Semiconductors be liable for any indirect, incidental,

punitive, special or consequ ential damages (including - wit hout limitatio n - lost

profits, lost savings, business interruption, costs related to the removal or

replacement of any products or rework charges) whether or not such

damages are based on tort (including negligence), warranty, breach of

contract or any other legal theory.

Notwithstanding any damages that customer might incur for any reason

whatsoever, NXP Semiconductors’ aggregat e and cumulative liabil ity towards

customer for the products described herein shall be limited in accordance

with theTerms and conditions of commercial sale of NXP Semicon ductors.

Right to make changes — NXP Semiconductors reserves the right to make

changes to information published in this document, including without

limitation specifications and product descriptions, at any time and without

notice. This document supersed es an d r eplaces all inf ormation supplied pri or

to the publication hereof.

Suitability for use — NXP Semiconductors products are not designed,

authorized or warranted to be suitable for use in life support, life-critical or

safety-critical systems or equipment, nor in applications where failure or

malfunction of an NXP Semiconductors product can reasonably be expected

to result in perso nal injury, death or severe property or environmental

damage. NXP Semiconductors and its suppliers accept no liability for

inclusion and/or use of NXP Semiconducto rs products in such equipment or

applications and ther efore such inclu sion and/or use is at the cu stomer’s own

risk.

Quick reference data — The Quick reference data is an extract of the

product data given in the Limiting values and Characteristics sections of this

document, and as such is not complete, exhaustive or legally binding.

Applications — Applications that are described herein for any of these

products are for il lustrative purposes only. NXP Semiconductors makes no

representation or warranty tha t such application s will be suitable for the

specified use without further testing or modification.

Customers are responsible for the design and ope ration of their applications

and products using NXP Semiconductors product s, and NXP Semiconductors

accepts no liability for any assistance with applications or customer product

design. It is customer’s sole responsibility to determine whether the NXP

Semiconductors product is suit able and fit for the custome r’s applications and

products planned, as well as fo r the planned application and use of

customer’s third party customer(s). Customers should provide appropriate

design and operating safeguards to minimize the risks associated with their

applications and products.

NXP Semiconductors does not accept any liability rela ted to any default,

damage, costs or problem which is based on any weakness or default in the

customer’s applications or products, or the application or use by customer’s

third party customer(s). Customer is responsible for doing all necessary

testing for th e customer’s applications and products using NXP

Semiconductors products in order to avoid a default of the applications and

the products or of the application or use by customer’s third party

customer(s). NXP does not accept any liability in this respect.

Limiting values — St ress above one or more limiting values (as defined in

the Absolute Maximum Ratings System of IEC 60134) will cause permanent

damage to the device. Limiting values are stress ratings only and (proper)

operation of the device at these or any other conditions above those given in

the Recommended operating conditions section (if present) or the

Characteristics sections of this document is not warranted. Constant or

repeated exposure to limiting values will permanent ly and irreversibly affect

the quality and reliability of the device.

Document status[1] [2] Product status[3] Definition

Objective [short] data sheet Development This document contains data from the objective specification for product development.

Preliminary [shor t] data sheet Qualification This document contains data from the preliminary specification.

Product [short] data sheet Production This document contains the product specification.

Product data sheet Rev. 4 — 15 June 2012 13 of 14

NXP Semiconductors PSMN013-30MLC

N-channel 30 V 13.6 mΩ logic level MOSFET in LFPAK33 using NextPower Technology

Terms and conditions of commercial sale — NXP Semiconductors

products are sold subject to the gener al terms and conditions of commercial

sale, as published athttp://www.nxp.com/profile/terms, unless otherwise

agreed in a valid written individual agreement. In case an individual

agreement is concluded only the terms and conditions of the respective

agreement shall apply. NXP Semiconductors hereby expressly objects to

applying the customer’s general terms and conditions with regard to the

purchase of NXP Semiconductors product s by customer.

No offer to sell or license — Nothing in this document may b e interpreted or

construed as an of fer to sell product s that is op en for accept ance or the grant ,

conveyance or implication of any license under any copyrights, patents or

other industrial or intellectual property rights.

Export control — This document as well as the item(s) descri bed herein may

be subject to export control regulat i ons. Export might require a prior

authorization from competent authorities.

Non-automotive qualified products — Unless this data sheet expressly

states that this specific NXP Semiconductors product is automotive qualified,

the product is not suitable for automo tive use. It i s neit her qualif ied nor tested

in accordance with automotive testing or application requirements. NXP

Semiconductors accepts no liability for inclusion and/or use of

non-automotive qualified products in automotive equipment or applications.

In the event that customer uses the product for design-in and use in

automotive applications to automot ive specifications and standard s, customer

(a) shall use the product without NXP Semiconductors’ warranty of the

product for such automotive applications, use and specifications, and (b)

whenever customer uses the product for automotive applications beyond

NXP Semiconductors’ specifications such use shall be solely at customer’s

own risk, and (c) customer fully indemnifies NXP Semiconductors for any

liability, damages or failed product cl aims resulting from custome r design and

use of the product for automotive applications beyond NXP Semiconductors’

standard warranty and NXP Semiconductors’ product specifications.

Translations — A non-English (translated ) versio n of a document is for

reference only. The English version shall prevail in case of any discrepancy

between the translated and English versions.

9.4 Trademarks

Notice: All refe renced brands, produc t names, service names and trademarks

are the property of their respect i ve ow ners.

Adelante,Bitport,Bitsound,CoolFlux,CoReUse,DESFire,EZ-HV,FabKey,G

reenChip,HiPerSmart,HITAG,I²C-bus

logo,ICODE,I-CODE,ITEC,Labelution,MIFARE,MIFARE Plus,MIFARE

Ultralight,MoReUse,QLPAK,Silicon

Tuner,SiliconMAX,SmartXA,STARplug,TOPFET,TrenchMOS,TriMedia

andUCODE — are trademarks of NXP B.V.

HD Radio andHD Radio logo — are trademarks of iBiquity Digital

Corporation.

10. Contact information

For more information, please visit:http://www.nxp.com

For sales office addresses, please send an email to :salesaddresses@nxp.com

NXP Semiconductors PSMN013-30MLC

N-channel 30 V 13.6 mΩ logic level MOSFET in LFPAK33 using NextPower Technology

For more information, please visit: http://www.nxp.co m

For sales office addresses, please send an email to: salesaddresses@nxp.com

Date of release: 15 June 2012

Document identifier: PSMN013-30MLC

Please be aware that important notices concerning this document and the product(s)

described herein, have been included in section ‘Legal information’.

11. Contents

1 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . .1

1.1 General description . . . . . . . . . . . . . . . . . . . . . .1

1.2 Features and benefits. . . . . . . . . . . . . . . . . . . . .1

1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . .1

1.4 Quick reference data . . . . . . . . . . . . . . . . . . . . .1

2 Pinning information. . . . . . . . . . . . . . . . . . . . . . .2

3 Ordering information. . . . . . . . . . . . . . . . . . . . . .2

4 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . .2

5 Thermal characteristics . . . . . . . . . . . . . . . . . . .4

6 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . .5

7 Package outline . . . . . . . . . . . . . . . . . . . . . . . . .10

8 Revision history. . . . . . . . . . . . . . . . . . . . . . . . .11

9 Legal information. . . . . . . . . . . . . . . . . . . . . . . .12

9.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . .12

9.2 Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . .12

9.3 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . .1 2

9.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . .13

10 Contact information. . . . . . . . . . . . . . . . . . . . . .1 3

Mouser Electronics

Authorized Distributor

Click to View Pricing, Inventory, Delivery & Lifecycle Information:

NXP:

PSMN013-30MLC,115