LITE-ON SEMICONDUCTOR SB170 thru SB1100 REVERSE VOLTAGE - 70 to 100 Volts FORWARD CURRENT - 1.0 Ampere SCHOTTKY BARRIER RECTIFIERS DO-41 FEATURES Metal-Semiconductor junction with guard ring Epitaxial construction Low forward voltage drop High current capability The plastic material carries UL recognition 94V-0 For use in low voltage,high frequency inverters,free A A B C D wheeling,and polarity protection applications DO-41 MECHANICAL DATA Min. Dim. A Case : JEDEC DO-41 molded plastic Polarity : Color band denotes cathode Weight : 0.012 ounces, 0.34 grams Mounting position : Any 25.4 4.10 0.71 B C Max. 5.20 0.86 2.00 2.70 D All Dimensions in millimeter MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 ambient temperature unless otherwise specified. Single phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20% CHARACTERISTICS Maximum Recurrent Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage Maximum Average Forward Rectified Current .375"(9.5mm) Lead Lengths @TL=100 C Peak Forward Surge Current 8.3ms single half sine-wave super imposed on rated load (JEDEC Method) Maximum Forward Voltage at SYMBOL SB170 SB180 SB190 SB1100 UNIT VRRM VRMS VDC 70 49 70 80 56 80 90 63 90 100 70 100 V I(AV) 1.0 A IFSM 40 A IF=1.0A,T J=25 C IF=1.0A,T J=100 C Maximum DC Reverse Current at Rated DC Blocking Voltage @TJ=25 C @TJ=100 C V V VF 0.79 0.69 V IR 0.2 2.0 mA Typical Junction Capacitance (Note 1) CJ 30 pF Typical Thermal Resistance (Note 2) R0JL 50 C/W TJ -55 to +150 C TSTG -55 to +150 C Operating Temperature Range Storage Temperature Range NOTES : 1.Measured at 1.0MHz and applied reverse voltage of 4.0V DC. 2.Thermal Resistance Junction to Lead. REV. 4, Apr-2005, KDHC03 AVERAGE FORWARD CURRENT AMPERES FIG.1 - FORWARD CURRENT DERATING CURVE 1.0 0.8 0.6 0.4 0.2 SINGLE PHASE HALF WAVE 60Hz RESISTIVE OR INDUCTIVE LOAD 0.375"(9.5mm) LEAD LENGTHS 0 25 50 75 100 150 125 PEAK FORWARD SURGE CURRENT, AMPERES RATING AND CHARACTERISTIC CURVES SB170 thru SB1100 FIG.2 - MAXIMUM NON-REPETITIVE SURGE CURRENT 40 30 20 10 Pulse width 8.3ms Single Half-Sine-Wave (JEDEC METHOD) 0 1 175 2 5 LEAD TEMPERATURE , C FIG.3 - TYPICAL JUNCTION CAPACITANCE 50 100 FIG.4 - TYPICAL FORWARD CHARACTERISTICS 100 10 TJ = 25 C, f= 1MHz 0 0.1 1 4 100 10 INSTANTANEOUS FORWARD CURRENT ,(A) 10 1.0 0.1 TJ = 25 C PULSE WIDTH 300us 0.01 0.2 0 0.4 0.6 0.8 1.0 12 INSTANTANEOUS FORWARD VOLTAGE , VOLTS REVERSE VOLTAGE , VOLTS FIG.5 - TYPICAL REVERSE CHARACTERISTICS 10 INSTANTANEOUS REVERSE CURRENT ,(mA) CAPACITANCE , (pF) 20 10 NUMBER OF CYCLES AT 60Hz TJ = 125 C 1.0 TJ = 100 C 0.1 0.01 TJ = 25 C 0.001 0 20 40 60 80 100 120 140 PERCENT OF RATED PEAK REVERSE VOLTAGE , (%) REV. 4, Apr-2005, KDHC03