TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http://www.microsemi.com Gort Road Business Park, Ennis, Co. Clare, Ireland Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298 NPN POWER SILICON SWITCHING TRANSISTOR Qualified per MIL-PRF-19500/560 DEVICES LEVELS 2N5339 2N5339U3 JAN JANTX JANTXV JANS ABSOLUTE MAXIMUM RATINGS (TC = +25C unless otherwise noted) Parameters / Test Conditions Symbol Value Unit Collector-Emitter Voltage VCEO 100 Vdc Collector-Base Voltage VCBO 100 Vdc Emitter-Base Voltage VEBO 6.0 Vdc IB 1.0 Adc IC Adc Top , Tstg 5.0 1.0 17.5 75 -65 to +200 RJA 175 C/W Base Current Collector Current (1) @ TA = +25C @ TC = +25C (2) @ TC = +25C (3) - U3 Operating & Storage Junction Temperature Range Total Power Dissipation Thermal Resistance, Junction-to Air PT W TO-39 (TO-205AD) C NOTES: 1) Derate linearly 5.71mW/C for TA > 25C 2) Derate linearly 100mW/C for TC > 25C 3) Derate linearly 434mW/C for TC > 25C - U3 ELECTRICAL CHARACTERISTICS (TA = +25C, unless otherwise noted) Parameters / Test Conditions Symbol Min. V(BR)CEO 100 Max. Unit OFF CHARACTERTICS Collector-Emitter Breakdown Voltage IC = 50mAdc Vdc Collector-Emitter Cutoff Current VCE = 100Vdc ICEO 100 Adc Collector-Emitter Cutoff Current VCE = 90Vdc, VBE = 1.5Vdc ICEX 1.0 Adc Collector-Base Cutoff Current VCB = 100Vdc ICBO 1.0 Adc Emitter-Base Cutoff Current VEB = 6.0Vdc IEBO 100 Adc T4-LDS-0011 Rev. 3 (101764) U-3 (TO-276AA) Page 1 of 4 TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http://www.microsemi.com Gort Road Business Park, Ennis, Co. Clare, Ireland Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298 ELECTRICAL CHARACTERISTICS (TA = +25C, unless otherwise noted) (CONT.) Parameters / Test Conditions ON CHARACTERISTICS Symbol Min. Max. 60 60 40 240 Unit (3) Forward-Current Transfer Ratio IC = 0.5Adc, VCE = 2.0Vdc IC = 2.0Adc, VCE = 2.0Vdc IC = 5.0Adc, VCE = 2.0Vdc hFE Collector-Emitter Saturation Voltage IC = 2.0Adc, IB = 0.2Adc IC = 5.0Adc, IB = 0.5Adc VCE(sat) 0.7 1.2 Vdc Base-Emitter Saturation Voltage IC = 2.0Adc, IB = 0.2Adc IC = 5.0Adc, IB = 0.5Adc VBE(sat) 1.2 1.8 Vdc Unit DYNAMIC CHARACTERISTICS Parameters / Test Conditions Magnitude of Common Emitter Small-Signal Short-Circuit Forward Current Transfer Ratio IC = 0.5Adc, VCE = 10Vdc, f = 10MHz Output Capacitance VCB = 10Vdc, IE = 0, 100kHz f 1.0MHz Input Capacitance VBE = 2.0Vdc, IC = 0, 100kHz f 1.0MHz Symbol Min. Max. |hfe| 3.0 15 Cobo 250 pF Cibo 1,000 pF SAFE OPERATING AREA DC Tests TC = +25C, 1 Cycle, t 0.5s Test 1 VCE = 2.0Vdc, IC = 5.0Adc Test 2 VCE = 5.0Vdc, IC = 2.0Adc Test 3 VCE = 90Vdc, IC = 55mAdc (3) Pulse Test: Pulse Width = 300s, Duty Cycle 2.0% T4-LDS-0011 Rev. 3 (101764) Page 2 of 4 TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http://www.microsemi.com Gort Road Business Park, Ennis, Co. Clare, Ireland Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298 PACKAGE DIMENSIONS Symbol CD CH HD LC LD LL LU L1 L2 TL TW P Q r Notes Dimensions Inches Millimeters Min Max Min Max .305 .355 7.75 9.02 .240 .260 6.10 6.60 .335 .370 8.51 9.40 .200 TP 5.08 TP .016 .021 0.41 0.53 .500 .750 12.70 19.05 .016 .019 0.41 0.48 .050 1.27 .250 6.35 .029 .045 0.74 1.14 .028 .034 0.71 0.86 .100 2.54 .050 1.27 .010 0.25 45 TP 45 TP 1, 2, 8, 9 1, 2, 8, 9 Note 5 3 6 7 7 7 7 7 3 10 5 4 10, 11 6 NOTES: 1. Dimensions are in inches. 2. Millimeters are given for general information only. 3. Symbol TL is measured from HD maximum. 4. Details of outline in this zone are optional. 5. Symbol CD shall not vary more than .010 (0.25 mm) in zone P. This zone is controlled for automatic handling. 6. Leads at gauge plane .054 inch (1.37 mm) +.001 inch (0.03 mm) -.000 inch (0.00 mm) below seating plane shall be within .007 inch (0.18 mm) radius of true position (TP) relative to tab. Device may be measured by direct methods or by gauge. 7. Symbol LD applies between L1 and L2. Dimension LD applies between L2 and LL minimum. 8. Lead designation, depending on device type, shall be as follows: 9. 10. 11. 12. Lead number TO-39 1 2 3 Emitter Base Collector Lead number three is electrically connected to case. Beyond r maximum, TW shall be held for a minimum length of .011 inch (0.28 mm). Symbol r applied to both inside corners of tab. In accordance with ASME Y14.5M, diameters are equivalent to x symbology. FIGURE 1. Physical dimensions (TO-39) T4-LDS-0011 Rev. 3 (101764) Page 3 of 4 TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http://www.microsemi.com NOTES: 1. Dimensions are in inches. 2. Millimeters are given for general information only. 3. In accordance with ASME Y14.5M, diameters are equivalent to x symbology. 4. Terminal 1 - collector, terminal 2 -base, terminal 3 - emitter. Gort Road Business Park, Ennis, Co. Clare, Ireland Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298 Ltr BL BW CH LH LW1 LW2 LL1 LL2 LS1 LS2 Q1 Q2 Dimensions Inches Millimeters Min Max Min Max .395 .405 10.03 10.29 .291 .301 7.40 7.65 .1085 .1205 2.76 3.06 .010 .020 0.25 0.51 .281 .291 7.14 7.39 .090 .100 2.29 2.54 .220 .230 5.59 5.84 .115 .125 2.92 3.18 .150 BSC 3.81 BSC .075 BSC 1.91 BSC .030 0.762 .030 0.762 FIGURE 2. Physical dimensions and configuration (U3) (SMD 5) (TO-276AA) T4-LDS-0011 Rev. 3 (101764) Page 4 of 4