71598HA (KT)/3277KI/N255MW, TS No.2005-1/4
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
PNP/NPN Epitaxial Planar Silicon Transistors
High-Voltage Switching Applications
Ordering number:EN2005A
2SA1416/2SC3646
( ) : 2SA1416
Specifications
Absolute Maximum Ratings at Ta = 25ËšC
Electrical Characteristics at Ta = 25ËšC
Package Dimensions
unit:mm
2038 [2SA1416/2SC3646]
Features
· Adoption of FBET, MBIT processes.
· High breakdown voltage and large current capacity.
· Fast switching time.
· Very small size making it easy to provide high-
density, small-sized hybrid ICs.
E : Emitter
C : Collector
B : Base
SANYO : PCP
(Bottom view)
retemaraPlobmySsnoitidnoCsgnitaRtinU
egatloVesaB-ot-rotcelloCV
OBC 021)–(V
egatloVrettimE-ot-rotcelloCV
OEC 001)–(V
egatloVesaB-ot-rettimEV
OBE 6)–(V
tnerruCrotcelloCI
C1)–(A
)esluP(tnerruCrotcelloCI
PC 2)–(A
noitapissiDrotcelloCP
C005Wm
3.1W
erutarepmeTnoitcnuJjT 051
erutarepmeTegarotSgtsT 051+ot55–
Moutned on ceramic board (250mm2×0.8mm) ˚C
ËšC
retemaraPlobmySsnoitidnoC sgnitaR tinU
nimpytxam
tnerruCffotuCrotcelloCI
OBC VBC I,V001)–(= E0=001)–(An
tnerruCffotuCrettimEI
OBE VBE I,V4)–(= C0=001)–(An
niaGtnerruCCDh
EF VEC I,V5)–(= CAm001)–(=*001*004
tcudorPhtdiwdnaB-niaGf
TVEC I,V01)–(= CAm001)–(=021zHM
ecnaticapaCtuptuOC
bo VBC zHM1=f,V01)–(= )31(Fp
5.8Fp
egatloVnoitarutaSrettimE-ot-rotcelloCV
)tas(EC ICI,Am004)–(= BAm04)–(= )2.0–()6.0–(V
1.04.0V
egatloVnoitarutaSrettimE-ot-esaBV
)tas(EB ICI,Am004)–(= BAm04)–(=58.0)–(2.1)–(V
egatloVnwodkaerBesaB-ot-rotcelloCV
OBC)RB( ICI,Aµ01)–(= E0=021)–(V
egatloVnwodkaerBrettimE-ot-rotcelloCV
OEC)RB( ICR,Am1)–(= EB =∞001)–(V
egatoVnwodkaerBesaB-ot-rettimEV
OBE)RB( IEI,Aµ01)–(= C0=6)–(V
emiTNO-nruTt
no .tiucriCtseTdeificepseeS )08(sn
08sn
emiTegarotSt
gts .tiucriCtseTdeificepseeS )007(sn
058sn
emiTllaFt
f.tiucriCtseTdeificepseeS )04(sn
05sn
No.2005-2/4
2SA1416/2SC3646
Switching Time T est Circuit
* : The 2SA1416/2SC3646 are classified by 100mA hFE as follows :
002R001082S041004T002
Marking 2SA1416 : AB hFE rank : R, S, T
2SC3646 : CB
(For PNP, the polarity is reversed)
Unit (resistance : Ω, capacitance : F)
No.2005-3/4
2SA1416/2SC3646
PS No.2005-4/4
No products described or contained herein are intended for use in surgical implants, life-support systems,
aerospace equipment, nuclear power control systems, vehicles, disaster/crime-prevention equipment and
the like, the failure of which may directly or indirectly cause injury, death or property loss.
Anyone purchasing any products described or contained herein for an above-mentioned use shall:
Accept full responsibility and indemnify and defend SANYO ELECTRIC CO., LTD., its affiliates,
subsidiaries and distributors and all their officers and employees, jointly and severally, against any
and all claims and litigation and all damages, cost and expenses associated with such use:
Not impose any responsibilty for any fault or negligence which may be cited in any such claim or
litigation on SANYO ELECTRIC CO., LTD., its affiliates, subsidiaries and distributors or any of
their officers and employees jointly or severally.
Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guarant-
eed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees
are made or implied regarding its use or any infringements of intellectual property rights or other rights of
third parties.
This catalog provides information as of July, 1998. Specifications and information herein are subject to
change without notice.
2SA1416/2SC3646
