Advanced Power N-CHANNEL ENHANCEMENT MODE
Electronics Corp. POWER MOSFET
▼ Repetitive Avalanche Rated BVDSS 650V
▼ Fast Switching Speed RDS(ON) 3.6Ω
▼ Simple Drive Requirement ID3.3A
▼ RoHS Compliant
Description
Absolute Maximum Ratings
Symbol Units
VDS Drain-Source Voltage V
VGS Gate-Source Voltage V
ID@TC=25℃Continuous Drain Current, VGS @ 10V A
ID@TC=100℃Continuous Drain Current, VGS @ 10V A
IDM Pulsed Drain Current1A
PD@TC=25℃Total Power Dissipation W
W/℃
EAS Single Pulse Avalanche Energy2mJ
IAR Avalanche Current A
EAR Repetitive Avalanche Energy mJ
TSTG ℃
TJOperating Junction Temperature Range ℃
Thermal Data
Symbol Value Units
Rthj-c Thermal Resistance Junction-case Max. 2.3 ℃/W
Rthj-a Thermal Resistance Junction-ambient Max. 62 ℃/W
Data & specifications subject to change without notice
Parameter
3
Parameter
-55 to 150
67
200704051-1/4
±30
3
Storage Temperature Range -55 to 150
10
54.3
Linear Derating Factor 0.44
AP03N70P-A
3.3
2.1
Pb Free Plating Product
Rating
650
AP03N70 series are specially designed as main switching devices for
universal 90~265VAC off-line AC/DC converter applications.TO-220 type
provide high blocking voltage to overcome voltage surge and sag in the
toughest power system with the best combination of fast
switching,ruggedized design and cost-effectiveness.
The TO-220 package is universally preferred for all commercial-industrial
applications. The device is suited for switch mode power supplies ,DC-
AC converters and high current high speed switching circuits.
GDSTO-220
G
D
S
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol Parameter Test Conditions Min. Typ. Max. Units
BVDSS Drain-Source Breakdown Voltage VGS=0V, ID=1mA 650 - - V
ΔBVDSS/ΔTjBreakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA - 0.6 - V/℃
RDS(ON) Static Drain-Source On-Resistance VGS=10V, ID=1.6A - - 3.6 Ω
VGS(th) Gate Threshold Voltage VDS=VGS, ID=250uA 2 - 4 V
gfs Forward Transconductance VDS=10V, ID=1.6A - 2 - S
IDSS Drain-Source Leakage Current (Tj=25oC) VDS=600V, VGS=0V - - 10 uA
Drain-Source Leakage Current (Tj=150oC) VDS=480V, VGS=0V - - 100 uA
IGSS Gate-Source Leakage VGS=±30V - - ±100 nA
QgTotal Gate Charge3ID=3A - 12 20 nC
Qgs Gate-Source Charge VDS=480V - 3 - nC
Qgd Gate-Drain ("Miller") Charge VGS=10V - 5 - nC
td(on) Turn-on Delay Time3VDD=300V - 9 - ns
trRise Time ID=3A - 5 - ns
td(off) Turn-off Delay Time RG=10Ω,VGS=10V - 18 - ns
tfFall Time RD=100Ω-6-
ns
Ciss Input Capacitance VGS=0V - 600 960 pF
Coss Output Capacitance VDS=25V - 45 - pF
Crss Reverse Transfer Capacitance f=1.0MHz - 4 - pF
Source-Drain Diode
Symbol Parameter Test Conditions Min. Typ. Max. Units
VSD Forward On Voltage3IS=3A, VGS=0V - - 1.5 V
trr Reverse Recovery Time2IS=3A, VGS=0V, - 422 - ns
Qrr Reverse Recovery Charge dI/dt=100A/µs - 2580 - nC
Notes:
1.Pulse width limited by safe operating area.
2.Starting Tj=25oC , VDD=50V , L=15mH , RG=25Ω , IAS=3A.
3.Pulse width <300us , duty cycle <2%.
2/4
AP03N70P-A
Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics
Fig 3. Normalized BVDSS v.s. Junction Fig 4. Normalized On-Resistance
Temperature v.s. Junction Temperature
Fi
g
5. Forward Characteristic o
f
Fig 6. Gate Threshold Voltage v.s.
Reverse Diode Junction Temperature
3/4
AP03N70P-A
0.0
1.0
2.0
3.0
-50 0 50 100 150
Tj , Junction Temperature ( oC)
Normalized RDS(ON)
ID=1.6A
VG=10V
0.8
0.9
1.0
1.1
1.2
-50 0 50 100 150
T j , Junction Temperature ( oC)
Normalized BVDSS (V)
0
1
2
3
4
0 5 10 15 20 25
VDS , Drain-to-Source Voltage (V)
ID , Drain Current (A)
TC=25oC
VG=4.0V
10V
6.0V
5.0V
4.5V
0
1
1
2
0 5 10 15 20 25
VDS , Drain-to-Source Voltage (V)
ID , Drain Current (A)
TC=150oC
VG=3.5V
10V
5.0V
4.5V
4.0V
0.01
0.1
1
10
100
0.1 0.3 0.5 0.7 0.9 1.1 1.3
VSD (V)
IS (A)
Tj = 25oC
Tj = 150oC
1
2
3
4
5
-50 0 50 100 150
Tj , Junction Temperature ( o C)
VGS(th) (V)
Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics
Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance
Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform
4/4
AP03N70P-A
0
0
1
10
100
1 10 100 1000 10000
VDS , Drain-to-Source Voltage (V)
ID (A)
Tc=25 oC
S
in
g
le Puls
e
10us
100ms
1ms
10ms
100ms
0.01
0.1
1
0.00001 0.0001 0.001 0.01 0.1 1
t , Pulse Width (s)
Normalized Th e rmal Re sponse (Rthjc)
PDM
Duty factor = t/T
Peak Tj = PDM x Rthjc + TC
t
T
0.02
0.01
0.05
0.1
0.2
Duty factor=0.5
Single Pulse
0
4
8
12
16
0 4 8 12 16
QG , Total Gate Charge (nC)
VGS , Gate to Sourc e Voltage ( V)
ID=3A
VDS =480V
1
100
10000
1 5 9 13 17 21 25 29
VDS , Drain-to-Source Voltage (V)
C (pF)
f
=1.0MH
z
Ciss
Coss
Crss
td(on) trtd(off) tf
VDS
VGS
10%
90%
Q
VG
10V
QGS QGD
QG
Charge
